https://nanyte.com/photoresists/ma-p-1225 · last updated 2026-09-28
- Manufacturer
- micro resist technology GmbH
- Tone
- positive
- Chemistry
- DNQ-novolak
- Thickness
- 2.5 µm
- Exposure dose
- 55 mJ/cm² (broadband, metered at 365 nm)
- Applications
- Etch mask · Electroplating / molding
Cross-checked — the spin curve (where published) and the single-value figures were read twice, independently, from the datasheet, with any disagreement settled against it.
- Substrate
- Resist
- Exposed
Spin coating
The manufacturer does not publish a spin curve for ma-P 1225.
- One tabulated point, not a sweep: the technical data table gives ma-P 1225 as 2.5 µm at 3000 rpm for 30 s, the single condition every grade in the series is listed at, and one anchor is not a curve.
- The sheet also plots film thickness against spin speed from 1000 to 6000 rpm for all six grades, but as smooth lines with no markers and no numeric table, so no values are published from it.
- Accel, dispense volume and edge-bead removal are not published.
- Adhesion
- Not addressed in this product sheet.
Soft bake
- Soft bake
- Not published — characterize on-tool
Exposure dose
The manufacturer publishes 55 mJ/cm² (broadband, metered at 365 nm). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- Dose at 405 nm
- Not published — characterize on-tool
- As published
- 55 mJ/cm² is the published dose for ma-P 1225, measured under broadband exposure with the meter reading the 365 nm line rather than specified as a monochromatic i-line dose.
SOURCE: Technical data table, p.1 of the ma-P 1200 series product sheet (ls.24.02.01), ma-P 1225 column
Development
Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.
SOURCE: Unique features / Characteristics, p.1-2 of the ma-P 1200 series product sheet (ls.24.02.01)
Hard bake, etch & strip
- Etch resistance
- "High pattern stability in wet etch processes and acid and alkaline plating baths" and "Highly stable in dry etch processes e.g. CHF3, CF4, SF6" (Unique features, p.1).
Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.
Where it's used
Practical notes from the datasheet
ma-P 1225 is the 2.5 µm grade of the ma-P 1200 series, coated at 3000 rpm for 30 s, and the sheet shows it resolving 2 µm lines on 4 µm spaces at that thickness. Its dose, 55 mJ/cm², sits only modestly above the thinner grades; the step to a much higher dose comes at ma-P 1240. The series is sold for stability in acid and alkaline plating baths and in wet and dry etches, and for easy removal afterwards. Development is aqueous alkaline; the sheet gives no softbake, developer product or develop time.
Grades in this family
Other grades in the ma-P 1200 series line differ mainly in coating thickness:
Troubleshooting
Common failure modes for ma-P 1225, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
ma-P 1225 plating moulds lift off a gold seed layer during electroplating. What helps?
MicroChemicals' trouble shooter notes that resist adhesion on noble metals such as gold is often poor and that HMDS does little for it. Its remedy is a few nanometres of titanium (or chromium) on the seed layer, which bonds well to the resist and can be etched out of the open areas after development, as long as that etch does not run far under the resist. It adds that the resist swells in aqueous solutions, which reduces adhesion during plating. The ma-P sheet sells the series as a plating mould, with a 2.5 µm ma-P 1225 film resolving 2 µm lines on 4 µm spaces as its own example.
SOURCE: MicroChemicals GmbH 'Photolithography Trouble Shooter'…
MicroChemicals GmbH 'Photolithography Trouble Shooter' application note — Inferior Resist Adhesion: On Noble Metals?, p.11–12, and Electro-Plating: Underplating?, p.18; micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — Applications and '2.5 µm ma-P 1225' SEM, p.1
Metal plated into my ma-P 1225 openings has poor adhesion to the seed. Why?
MicroChemicals' trouble shooter gives two resist-side causes. A few nanometres of resist left on the seed after development stop the plated metal making proper contact, and they come from a developer that does not clear the resist without residue. HMDS applied as a liquid or onto an unheated wafer can crosslink the resist nearest the substrate so it no longer develops. The ma-P sheet names no developer beyond aqueous alkaline, so qualify the one you use on a test wafer before plating, and prime HMDS from vapour onto a heated substrate.
SOURCE: MicroChemicals GmbH 'Photolithography Trouble Shooter' —…
MicroChemicals GmbH 'Photolithography Trouble Shooter' — Electro-Plating: Bad Adhesion of the Metal Structures? (resist residuals after development; incorrectly applied HMDS), p.17; micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — Unique features, p.1
My plating rate drops after running ma-P 1225 wafers through the bath. Could the resist be doing it?
It can. MicroChemicals' trouble shooter says a typical softbake leaves around 2–4 % solvent in the film, and whatever is released into the bath can upset the deposition chemistry and slow the rate. Its fix is a longer and/or hotter softbake; for thick films, which keep solvent near the substrate even after a long softbake, it adds a bake after development about 10 °C below the resist's softening point. The ma-P sheet claims high stability in acid and alkaline plating baths for the series, but that is the resist's own stability, not what it releases into the bath.
SOURCE: MicroChemicals GmbH 'Photolithography Trouble Shooter' —…
MicroChemicals GmbH 'Photolithography Trouble Shooter' — Electro-Plating: Bath Contamination by Remaining Solvent? (insufficient softbake; thick resist films), p.17; micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — Unique features, p.1
The sheet gives no softbake for ma-P 1225. What goes wrong if I bake it too hard?
MicroChemicals' trouble shooter covers both directions. Overbaking decomposes part of the photoactive compound, so the film develops more slowly and loses contrast; it also embrittles the resist and builds stress against the substrate, and a wafer cooled abruptly afterwards can lose adhesion. Underbaking leaves solvent that raises dark erosion. Its general starting point for standard positive resists is about 100 °C for one minute per µm of film — roughly two and a half minutes for this grade — then tune from there. If adhesion suffers after the bake, try a slow ramp down.
SOURCE: MicroChemicals GmbH 'Photolithography Trouble Shooter' —…
MicroChemicals GmbH 'Photolithography Trouble Shooter' — Thermal Decomposition of Photo Active Compound? (during the softbake), p.8; Dark Erosion Too High: Optimum Softbake Conditions?, p.9–10; Optimum Softbake Parameters? (softbake too long or too hot), p.12; Minor Resist Resolution: Suited Softbake Parameters?, p.12–13; micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — Technical data table, p.1
Sources & disclaimer
- micro resist technology GmbH — ma-P 1225 datasheet (ls.24.02.01 (printed on both pages)) · accessed 2026-09-10
- https://kayakuam.com/products/ma-p-1200/ — kayakuam.com states 'ma-P 1200 is a positive tone DNQ/novolac based resist series'; the basis for classifying the ma-P 1200 grades as dnq-novolak.
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-28.