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ma-P 1205 process recipe

ma-P 1205 is the thinnest grade of micro resist technology's ma-P 1200 positive series, coating 0.5 µm at 3000 rpm with a published dose of 35 mJ/cm².

https://nanyte.com/photoresists/ma-p-1205 · last updated 2026-09-28

At a glance
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Manufacturer
micro resist technology GmbH
Tone
positive
Chemistry
DNQ-novolak
Thickness
0.5 µm
Exposure dose
35 mJ/cm² (broadband, metered at 365 nm)
Applications
Etch mask · Electroplating / molding

Cross-checked — the spin curve (where published) and the single-value figures were read twice, independently, from the datasheet, with any disagreement settled against it.

The exposed resist dissolves in the developer; the unexposed film stays. Schematic cross-sections for ma-P 1205 — feature width, film aspect ratio and sidewall angle are illustrative, not to scale.
—01 / Coating

Spin coating

The manufacturer does not publish a spin curve for ma-P 1205.

  • One tabulated point, not a sweep: the technical data table gives ma-P 1205 as 0.5 µm at 3000 rpm for 30 s, the single condition every grade in the series is listed at, and one anchor is not a curve.
  • The sheet also plots film thickness against spin speed from 1000 to 6000 rpm for all six grades, but as smooth lines with no markers and no numeric table, so no values are published from it.
  • Accel, dispense volume and edge-bead removal are not published.
Adhesion
Not addressed in this product sheet.
—02 / Bake

Soft bake

Soft bake
Not published — characterize on-tool
—03 / Exposure

Exposure dose

The manufacturer publishes 35 mJ/cm² (broadband, metered at 365 nm). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.

Dose at 405 nm
Not published — characterize on-tool
As published
35 mJ/cm² is the published dose for ma-P 1205, measured under broadband exposure with the meter reading the 365 nm line rather than specified as a monochromatic i-line dose.

SOURCE: Technical data table, p.1 of the ma-P 1200 series product sheet (ls.24.02.01), ma-P 1205 column

—04 / Development

Development

Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.

SOURCE: Unique features / Characteristics, p.1-2 of the ma-P 1200 series product sheet (ls.24.02.01)

—05 / Post-processing

Hard bake, etch & strip

Etch resistance
"High pattern stability in wet etch processes and acid and alkaline plating baths" and "Highly stable in dry etch processes e.g. CHF3, CF4, SF6" (Unique features, p.1).

Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.

—06 / Applications

Where it's used

Practical notes from the datasheet

ma-P 1205 is the thinnest of micro resist technology's standard ma-P 1200 positive resists, coating half a micron at 3000 rpm for 30 s. The sheet's own example shows it holding 1 µm lines on 3 µm spaces at that thickness. Its dose, 35 mJ/cm² under broadband exposure metered at 365 nm, is the lowest in the series, shared only with ma-P 1210. Like the rest of the line it is sold for high pattern stability in wet etches and in acid and alkaline plating baths, for dry etching in CHF3, CF4 or SF6, and for easy removal; the listed applications are etch masks for Si, SiO2, semiconductors and metals, electroplating moulds and ion-implantation masks. The series develops in aqueous alkali. The sheet publishes no softbake, developer product or develop time, so those have to be set on-tool.

—07 / Family

Grades in this family

Other grades in the ma-P 1200 series line differ mainly in coating thickness:

ma-P 1200 series — grade comparison
GradeThicknessExposure dose
ma-P 1205 (this page)0.5 µm35 mJ/cm²
ma-P 12101 µm35 mJ/cm²
ma-P 12151.5 µm45 mJ/cm²
ma-P 12252.5 µm55 mJ/cm²
ma-P 12404 µm110 mJ/cm²
ma-P 12757.5–40 µm150 mJ/cm²
ma-P 1275 HV11–50 µm—
—08 / Troubleshooting

Troubleshooting

Common failure modes for ma-P 1205, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.

Why does my ma-P 1205 dose stop working when I move from bare silicon to glass or a metal film?

MicroChemicals' trouble shooter explains it: in films this thin a large share of the light reaches the substrate, so the absorbed dose depends on what is underneath. Reflective metals such as Ag, Cr or Pt send light back into the resist, ITO absorbs most of the UV, and glass or quartz transmit most of it. The published 35 mJ/cm² (broadband, metered at 365 nm) is a starting point for the sheet's conditions, not a number that transfers between substrates: run a short dose series on each new stack.

SOURCE: micro resist technology ma-P 1200 series product sheet…

micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — Technical data table, p.1; MicroChemicals GmbH 'Photolithography Trouble Shooter' application note (not a micro resist technology document) — Thin Resist Films?, p.7, and Changed Substrate Reflectivity? (thin resist films), p.9

My ma-P 1205 coat shows colour bands across the wafer. Is the film bad?

Not necessarily. At half a micron the colour is thin-film interference, and MicroChemicals' trouble shooter notes that in thin films a thickness change of only a few tens of nanometres changes it visibly. It lists solvent loss from a frequently opened bottle, resist ageing, temperature or humidity changes, and changed coating equipment or parameters as causes, and recommends coating a few dummy wafers before a new series so the coater atmosphere is solvent-saturated. Measure the thickness against the sheet's 0.5 µm at 3000 rpm for 30 s before blaming the resist.

SOURCE: micro resist technology ma-P 1200 series product sheet…

micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — Technical data table, p.1; MicroChemicals GmbH 'Photolithography Trouble Shooter' — Discolouring? (substrate and resist film thickness), p.1, and Resist Film Thickness Higher Than Expected?, p.8

Can I thin ma-P 1205 down to get below 0.5 µm?

The sheet's spin chart runs ma-P 1205 out to 6000 rpm and stops there; it names no thinning solvent. MicroChemicals' trouble shooter gives the general risk with diluting a resist: use only a suitable solvent and stay under the resist-specific maximum dilution, or the resist can rapidly form particles. It adds that expired or wrongly stored resist forms particles too, especially low-viscosity thin resists, so check the bottle's age before diluting it. Ask micro resist technology for a thinner and ratio first.

SOURCE: micro resist technology ma-P 1200 series product sheet…

micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — film thickness vs spin speed chart, p.1; MicroChemicals GmbH 'Photolithography Trouble Shooter' — Diluted Photoresist? and Expired Resist?, p.14

ma-P 1205 peels during an HF oxide etch. What can I change?

MicroChemicals' trouble shooter explains the mechanism: HF diffuses into the resist and can peel it on a large scale, either during the etch or after the rinse. A 0.5 µm film is a thin barrier against that. Its two remedies are a thicker resist film and buffered HF (BOE) instead of straight HF. Within this series, ma-P 1210 (1.0 µm) and ma-P 1215 (1.5 µm) coat thicker at the same 3000 rpm. The same note warns that an earlier HF dip which left some oxide behind gives poor, non-reproducible adhesion.

SOURCE: micro resist technology ma-P 1200 series product sheet…

micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — Technical data table, p.1; MicroChemicals GmbH 'Photolithography Trouble Shooter' — Using HF-Containing Etchants? and Preceding HF Etching, p.11

—09 / Sources

Sources & disclaimer

Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-28.

Cite this recipe

NANYTE. "ma-P 1205 process recipe." NANYTE Photoresist Library. https://nanyte.com/photoresists/ma-p-1205. Accessed 2026-09-28.

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