https://nanyte.com/photoresists/ma-p-1210 · last updated 2026-09-28
- Manufacturer
- micro resist technology GmbH
- Tone
- positive
- Chemistry
- DNQ-novolak
- Thickness
- 1 µm
- Exposure dose
- 35 mJ/cm² (broadband, metered at 365 nm)
- Applications
- Etch mask · Electroplating / molding
Cross-checked — the spin curve (where published) and the single-value figures were read twice, independently, from the datasheet, with any disagreement settled against it.
- Substrate
- Resist
- Exposed
Spin coating
The manufacturer does not publish a spin curve for ma-P 1210.
- One tabulated point, not a sweep: the technical data table gives ma-P 1210 as 1 µm at 3000 rpm for 30 s, the single condition every grade in the series is listed at, and one anchor is not a curve.
- The sheet also plots film thickness against spin speed from 1000 to 6000 rpm for all six grades, but as smooth lines with no markers and no numeric table, so no values are published from it.
- Accel, dispense volume and edge-bead removal are not published.
- Adhesion
- Not addressed in this product sheet.
Soft bake
- Soft bake
- Not published — characterize on-tool
Exposure dose
The manufacturer publishes 35 mJ/cm² (broadband, metered at 365 nm). Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- Dose at 405 nm
- Not published — characterize on-tool
- As published
- 35 mJ/cm² is the published dose for ma-P 1210, measured under broadband exposure with the meter reading the 365 nm line rather than specified as a monochromatic i-line dose.
SOURCE: Technical data table, p.1 of the ma-P 1200 series product sheet (ls.24.02.01), ma-P 1210 column
Development
Not published for this resist: Developer, Dilution, Time, Method, Rinse — characterize on-tool.
SOURCE: Unique features / Characteristics, p.1-2 of the ma-P 1200 series product sheet (ls.24.02.01)
Hard bake, etch & strip
- Etch resistance
- "High pattern stability in wet etch processes and acid and alkaline plating baths" and "Highly stable in dry etch processes e.g. CHF3, CF4, SF6" (Unique features, p.1).
Not published for this resist: Hard bake, Descum, Stripper, Storage — characterize on-tool.
Where it's used
Practical notes from the datasheet
ma-P 1210 is the one-micron grade in micro resist technology's ma-P 1200 series, and the sheet's example is a fair statement of what it is for: 0.85 µm lines resolved in a 1 µm film on a mask aligner, an aspect ratio a little over 1:1. It shares the lowest dose in the series, 35 mJ/cm², with the half-micron 1205, so on paper doubling the film thickness adds nothing to the exposure dose. Like the rest of the line it is marketed as stable in wet and dry etch chemistries and in acid and alkaline plating baths, and it develops in aqueous alkali. No softbake, developer product or develop time is published, so those are on-tool parameters.
Grades in this family
Other grades in the ma-P 1200 series line differ mainly in coating thickness:
Troubleshooting
Common failure modes for ma-P 1210, answered from the manufacturer's datasheet and application notes. These are starting points — your substrate, tooling and environment shift the specifics, so calibrate on-tool.
My sub-micron lines in ma-P 1210 come out wider or narrower than the mask. Where do I look first?
The sheet shows ma-P 1210 holding 0.85 µm lines at its 1.0 µm film, so the resist is not the limit there. MicroChemicals' trouble shooter lists the usual causes: too much dose scatters light into the unexposed resist and eats the lines; too little forces a longer develop, and the extra dark erosion costs contrast. Any gap between mask and resist — a particle, a bubble, an edge bead, a bowed wafer — adds diffraction and widens exposed features. Start from the published 35 mJ/cm² broadband dose, run a dose series, and check contact before retuning the develop.
SOURCE: micro resist technology ma-P 1200 series product sheet…
micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — Technical data table and '1 µm ma-P 1210, 0.85 µm lines' SEM, p.1; MicroChemicals GmbH 'Photolithography Trouble Shooter' (not a micro resist technology document) — Accidental Exposure of Positive Resists? (Proximity Gap), p.10; Gap between Photomask and Resist Surface?, p.12; Optimum Exposure Dose?, p.13
ma-P 1210 develops slowly and unevenly even though I exposed at the published dose. Why?
MicroChemicals' trouble-shooting note (not a micro resist technology document) explains that DNQ positive resists need some water back in the film after the softbake before they develop at a normal rate. For a film around 1 µm, like ma-P 1210, that rehydration takes roughly a minute in room air, so a wafer rushed from hotplate to aligner can lag. Humidity matters as much as time: the development rate drops noticeably below about 40 % relative humidity, and 40–50 % held constant is the recommended range. A dry winter cleanroom can look like an exposure problem.
SOURCE: MicroChemicals GmbH 'Photolithography Trouble Shooter'…
MicroChemicals GmbH 'Photolithography Trouble Shooter' application note — Development: Insufficient Development Rate, Sufficient Rehydration?, p.6; micro resist technology ma-P 1200 series product sheet (ls.24.02.01) — Technical data table (1.0 µm, 35 mJ/cm²), p.1
Small ma-P 1210 features lift off in the developer on glass or quartz. What is going on?
MicroChemicals' trouble shooter describes this for positive resists on transparent substrates: with too high a dose, light is guided sideways through the substrate and exposes the resist near the interface, so small structures can lift in the developer. Keep the dose no higher than clearing needs and run the dose series on the transparent substrate itself rather than carrying over a number from another substrate. The same note recommends a dehydration bake at 120–140 °C for several minutes on clean substrates to improve adhesion.
SOURCE: MicroChemicals GmbH 'Photolithography Trouble Shooter' —…
MicroChemicals GmbH 'Photolithography Trouble Shooter' — Inferior Resist Adhesion: Positive Tone Resists on Transparent Substrates?, p.12, and Optimum Substrate Pretreatment?, p.11
What causes comet streaks in a spun ma-P 1210 film?
MicroChemicals' trouble shooter traces radial streaks mostly to air or nitrogen bubbles, more rarely particles, that the spin drives outward. Carrying or shaking the bottle injects air, and a bottle that has sat closed for months can hold dissolved N2 released by the photoactive compound, which forms bubbles once it is opened. Its fix is to let the bottle stand 1–2 hours, with the cap set loosely for the N2 case, before coating. If you dispense by pipette, give the filled pipette a moment so bubbles rise away from the tip.
SOURCE: MicroChemicals GmbH 'Photolithography Trouble Shooter' — Spin…
MicroChemicals GmbH 'Photolithography Trouble Shooter' — Spin Coating: Comet-Shaped Structures?, p.3; Bubbles or Particles in Resist Film after Coating (Resist Bottles Moved?, Resist Bottles Closed for A While?, Manual Resist Dispensing?), p.13–14
Sources & disclaimer
- micro resist technology GmbH — ma-P 1210 datasheet (ls.24.02.01 (printed on both pages)) · accessed 2026-09-10
- https://kayakuam.com/products/ma-p-1200/ — kayakuam.com states 'ma-P 1200 is a positive tone DNQ/novolac based resist series'; the basis for classifying the ma-P 1200 grades as dnq-novolak.
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-09-28.