https://nanyte.com/photoresists/nr71-3000p · last updated 2026-07-26
- Manufacturer
- Futurrex, Inc.
- Tone
- negative
- Thickness
- 2.2–6 µm
- Exposure dose
- 21 mJ/cm² at 365 nm
- Developer
- Resist Developer RD6
- Applications
- Etch mask
Cross-checked — two independent extractions agree on the spin curve and the single-value figures.
- Substrate
- Resist
- Exposed
Spin coating
Data points
| Series | rpm | µm |
|---|---|---|
| NR71-3000P | 800 | 6.0 |
| 3000 | 3.0 | |
| 4000 | 2.6 | |
| 5000 | 2.2 |
Values are the manufacturer’s starting points, not a guarantee — characterize on your own tool.
numeric table 'Film thickness after 150°C hotplate bake for 60 s (nm) / Coating spin speed, 40 s spin (rpm)', p.1 of Futurrex NR71-3000P Technical Information. The datasheet publishes each point as an nm RANGE, not a single value: published as 5700-6300 nm at 800 rpm, 2850-3150 nm at 3000 rpm, 2460-2720 nm at 4000 rpm, 2140-2326 nm at 5000 rpm; midpoint used for each (every range is symmetric, approx. nominal +/-4-5%), converted nm->um. The 3000 rpm midpoint (3000 nm = 3.0 um exactly) matches the '3000' in the product name NR71-3000P, corroborating the midpoint reading. Only 4 spin speeds are published (no 1000 or 2000 rpm rows, unlike the NR9-1500PY datasheet).
- Spin coating is at a selected speed for 40 s (Processing step 1).
- Edge Bead Remover EBR2 is applied to the bottom and edge of the coated wafer for 10 s, stopping 5 s before spin cycle completion (Processing step 2).
- Bake schedules differ by substrate thermal conductivity — see softbake/peb notes.
- Adhesion
- HMDS not required — Datasheet lists 'elimination of a need for application of adhesion promoters such as HMDS' as one of NR71-3000P's advantages over other resists (Description, p.1).
Soft bake
- Soft bake
- 150 °C · 60 s · hotplate
- Notes
- 150°C/60 s applies to good thermal conductors (Si, GaAs, InP). For a 1 mm-thick glass substrate the datasheet instead specifies 165°C for 240 s.
SOURCE: Processing step 3, p.2
Exposure dose
The manufacturer publishes 21 mJ/cm² at 365 nm. Dose scales with film thickness and depends on your optics, so treat it as a starting point and run a dose array.
- Dose at 365 nm
- 21 mJ/cm²
- Dose at 405 nm
- Not published — characterize on-tool
- As published
- The 21 mJ/cm² i-line figure is a sensitivity normalized to a 1 µm film, not a process dose for the thick coats this resist is bought for; no dose is published at any other thickness.
- Post-exposure bake
- 100 °C · 60 s
SOURCE: Properties, p.1
Development
- Developer
- Resist Developer RD6
- Time
- 30 s
- Rinse
- Deionized water rinse until water resistivity reaches prescribed limit (Processing step 7).
- Developer family
- TMAH-based
Not published for this resist: Dilution, Method — characterize on-tool.
SOURCE: Processing steps 6-7, p.2
Hard bake, etch & strip
- Etch resistance
- "Superior selectivity in RIE process" (Description, p.1).
- Stripper
- Resist Remover RR41 (Processing step 9, p.2) — note this differs from the RR5 remover specified for Futurrex's NR9-1500PY.
- Storage
- "Guaranteed shelf life at 25°C storage (years) 3" (Properties, p.1); "shelf life exceeding 3 years at room temperature storage" (Description, p.1).
Not published for this resist: Hard bake, Descum — characterize on-tool.
Where it's used
Practical notes from the datasheet
NR71-3000P is Futurrex's high-photospeed negative-tone 365 nm resist, formulated in gamma-butyrolactone and rated for 180°C thermal stability — notably higher than the 100°C rating on Futurrex's NR9 series — and the datasheet lists elimination of an HMDS adhesion-promoter step as a specific advantage. Unlike NR9-1500PY, which is explicitly marketed for lift-off with a tunable undercut, this datasheet describes NR71-3000P's developed sidewall as 'straight' and makes no lift-off claim. The datasheet gives two full bake schedules for both softbake and post-exposure bake — 150°C/60 s (softbake) and 100°C/60 s (PEB) for good thermal conductors (Si, GaAs, InP), versus 165°C/240 s and 110°C/240 s respectively for 1 mm-thick glass — a substrate-dependent difference easy to lose when copying a recipe across substrates. The 21 mJ/cm² sensitivity at 365 nm is explicitly normalized to a 1 µm-thick film, and resist removal uses Resist Remover RR41 (not the RR5 used for NR9-1500PY — the two SKUs' strip chemistries should not be conflated).
Sources & disclaimer
- Futurrex, Inc. — NR71-3000P datasheet · accessed 2026-07-10
- https://nrf.aux.eng.ufl.edu/_files/msds/2/Resist%20Developer%20RD6.pdf — Futurrex's material safety data sheet for Resist Developer RD6 (dated 2009, hosted by the University of Florida Nanoscale Research Facility): gives the composition as 97-98 % water and 2-3 % tetramethylammonium hydroxide. The resist datasheet names RD6 but never states its chemistry.
- Lafalce et al.. Robust lasing modes in coupled colloidal quantum dot microdisk pairs using a non-Hermitian exceptional point. Nature Communications (2019). doi:10.1038/s41467-019-08432-6Dilutes NR71-3000P with ethyl lactate to one third of the as-supplied concentration and spins it at 3000 rpm for 1 min onto a CYTOP/silicon substrate to define coupled quantum-dot microdisk resonators.
Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Product names and trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed. Last updated 2026-07-26.