{ "name": "NANYTE photoresist process recipe library", "url": "https://nanyte.com/photoresists", "license": "Data compiled from manufacturer datasheets; each recipe cites its source. Free to use with attribution.", "disclaimer": "Manufacturer datasheet values are starting points; optimal parameters depend on your substrate, equipment and environment. Trademarks belong to their respective owners. NANYTE is not affiliated with the manufacturers listed.", "count": 57, "recipes": [ { "slug": "adex", "name": "ADEX", "manufacturer": "DJ MicroLaminates", "productLine": "ADEX Epoxy Dry Film Rolls/Sheets", "aliases": [ "ADEXR", "ADEX Dry Film", "ADEX Thin Film Rolls/Sheets", "DJ MicroLaminates ADEX" ], "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed by either ADEX datasheet (the undated 'DJML-ADEX-Data-Sheet.pdf' currently linked from djmicrolaminates.com, or its Rev June 2020 sibling). Both describe ADEX only as a chemically-amplified, i-line-sensitive negative dry-film epoxy for permanent 3D MEMS structures, plating molds and metal redistribution layers; neither mentions grayscale or partial-exposure dose-response profiling.", "status": "active", "successorSlug": null, "summary": "ADEX is DJ MicroLaminates' chemically-amplified, i-line-sensitive negative dry-film epoxy photoresist, laminated rather than spin-coated, in 5-75 µm sheet thicknesses for microfluidics, plating molds and permanent 3D MEMS structures.", "thicknessRange": { "min_um": 5, "max_um": 75, "basis": "stated", "source": "stated -- Product Description, p.1 of both the undated 'DJML-ADEX-Data-Sheet.pdf' and the Rev June 2020 datasheet: 'ADEX is available in 5, 10, 15, 20, 25, 30, 40, 50 and 75µm thicknesses...' -- a discrete list of nine standard sheet thicknesses, not a continuous range; min_um/max_um are the floor and ceiling of that list. Separately, both datasheets note ADEX 'has shown excellent image quality up to 100µm thicknesses' when sheets are stacked/combined, which is not a single-sheet figure and is not used here." }, "coatingMethod": "dry-film-lamination", "spinCurves": [], "spinNotes": "ADEX is laminated onto the substrate with a heated roll or vacuum laminator, not spin-coated -- there is no spin curve, and thickness is fixed per sheet. Process guideline table (identical in both datasheets, p.1): remove the PP cover sheet by peeling at room temperature (18-25°C) on a cool surface; laminate via hot roll or vacuum at 50-70°C @ 1 ft/min (0.3 m/min); remove the carrier PET by peeling at room temperature. No lamination pressure figure is published (unlike the sibling SUEX datasheets, which state 5-10 psi / 30-65 kPa). No pre-lamination substrate dehydration-bake step, no edge-bead-removal step, and no substrate-cleaning recommendation are mentioned in either ADEX datasheet (unlike SUEX and the SU-8 families).", "adhesion": { "hmds": null, "notes": "Not addressed in either ADEX datasheet -- no adhesion-promoter recommendation, for or against, is given anywhere in either document (unlike the sibling SUEX datasheets, which state promoters are 'typically not useful')." }, "rehydration": null, "softbake": { "temp_c": null, "time_s": null, "method": null, "notes": "Neither ADEX datasheet lists a bake step between lamination and exposure -- the process guideline table goes directly: remove PP cover sheet -> laminate -> remove carrier PET -> expose -> PEB -> develop -> hardbake (optional). Unlike the sibling SUEX datasheets (which describe an optional 80-85°C / 5 min 'post lamination bake' for improved adhesion), no such step is mentioned anywhere in either ADEX datasheet.", "source": "Process guidelines / Process guideline table, p.1 of both the undated 'DJML-ADEX-Data-Sheet.pdf' and the Rev June 2020 ADEX datasheet" }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "sheet-sku", "bins": [ { "um_min": 5, "um_max": 5, "mJ_min": 90, "mJ_max": 90 }, { "um_min": 10, "um_max": 10, "mJ_min": 125, "mJ_max": 125 }, { "um_min": 15, "um_max": 15, "mJ_min": 150, "mJ_max": 150 }, { "um_min": 20, "um_max": 20, "mJ_min": 175, "mJ_max": 175 }, { "um_min": 25, "um_max": 25, "mJ_min": 200, "mJ_max": 200 }, { "um_min": 30, "um_max": 30, "mJ_min": 215, "mJ_max": 215 }, { "um_min": 40, "um_max": 40, "mJ_min": 250, "mJ_max": 250 }, { "um_min": 50, "um_max": 50, "mJ_min": 325, "mJ_max": 325 }, { "um_min": 75, "um_max": 75, "mJ_min": 875, "mJ_max": 875 } ], "source": "'Typical process conditions' table, p.1, footnoted 'on Silicon' — identical in the undated 'DJML-ADEX-Data-Sheet.pdf' and the Rev June 2020 ADEX datasheet. One dose per standard sheet thickness; the table carries no wavelength label, so none is recorded here." } ], "basisCopy": "Dose follows the sheet you laminate, measured on silicon: 90 mJ/cm² for a 5 µm sheet, 200 for 25 µm and 875 for the 75 µm sheet." }, "peb": { "temp_c": null, "time_s": null, "notes": "The datasheet gives two alternative PEB conditions, not a range: 95°C for 5-10 min, OR 85°C for 10-20 min (Process guidelines table, p.1, identical in both datasheets). These are two discrete named options — run whichever matches your process, not a value between them.", "source": "Process guidelines / Process guideline table, p.1 of both the undated 'DJML-ADEX-Data-Sheet.pdf' and the Rev June 2020 ADEX datasheet" }, "floodExposure": null, "develop": { "developer": "Cyclohexanone", "dilution": null, "time_s": null, "method": null, "rinse": "IPA rinse (datasheet footnote **, both datasheets; no further detail on duration or technique is given).", "source": "Process guidelines table + 'Typical process conditions' table, p.1 of both the undated 'DJML-ADEX-Data-Sheet.pdf' and the Rev June 2020 ADEX datasheet" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 150, "max": 200 }, "time_s": null, "timeRange_s": { "min": 3600, "max": 7200 }, "notes": "Optional, 'recommended for best chemical resistance' (Typical Process Procedure, p.1, both datasheets; the Rev June 2020 sibling adds 'and stress relief'). A single range is given, not discrete options: 150-200°C for 1-2 hr (Process guidelines table, p.1, identical in both datasheets).", "source": "Process guidelines / Process guideline table, p.1 of both the undated 'DJML-ADEX-Data-Sheet.pdf' and the Rev June 2020 ADEX datasheet" }, "descum": null, "applications": [ "microfluidics", "mems-structural", "electroplating-molding", "high-aspect-ratio" ], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": true, "stripper": "Difficult to remove after cure -- the two ADEX datasheets differ slightly on the recommended method. The undated 'DJML-ADEX-Data-Sheet.pdf' states: 'Removal after cure is difficult. It is best removed with laser ablation techniques. It is only partially removed with resist strippers.' The Rev June 2020 sibling instead states: 'Removal after cure is difficult. In certain cases, films can be removed in hot NMP.' Uncured ADEX (prior to PEB / cure) can be cleaned with acetone; other, less stringent solvents may be used but may be less effective (Clean-up / Clean Up section, p.2 of both datasheets).", "storage": "The undated 'DJML-ADEX-Data-Sheet.pdf' gives: 0°C (32°F) -> 18-24 months shelf life; 18-23°C (64-73°F) -> 12 months. The Rev June 2020 sibling gives shorter figures for the same two conditions: 0°C (32°F) -> 12 months; 18-23°C (64-73°F) -> 6 months (adding 'longer shelf-life at room temperature is expected'). Both agree: store in a dark, dry location, covered with black polyethylene when not in use to exclude UV transmission, at or below 25°C, and avoid high temperatures (risk of increased molecular weight and altered performance and stability). Source: Storage and Handling / Recommended Shelf Life / Shelf Life sections, p.2 of both datasheets.", "notes": "ADEX is DJ MicroLaminates' i-line-sensitive, chemically-amplified negative epoxy dry-film photoresist -- the same underlying dry-film-lamination chemistry family as the company's thicker SUEX product, but supplied in thinner standard sheets (5-75 µm vs. SUEX's 20 µm-1 mm) and marketed specifically for microfluidics, bio-sensor/bio-assay devices, force/load sensors, accelerometers, gyroscopes, and CMOS-compatible permanent 3D MEMS structures, plus plating molds and copper redistribution layers in wafer-level packaging. Because it laminates via a heated roller or vacuum press rather than a spindle, its process is defined by roller temperature, speed and (for the vacuum option) chamber pressure rather than a spin curve, and its exposure dose and develop time are both published as per-sheet-thickness tables rather than single values -- treat the row matching the target sheet thickness as the starting point. ADEX is capable of >5:1 aspect-ratio structures with <5% thickness variation and can be stacked in multiple layers or thicknesses for taller features, with demonstrated good image quality up to 100 µm of combined/stacked thickness. Both datasheets agree the cured film is difficult to remove with conventional solvent-based strippers, differing only on the recommended fallback (laser ablation per the primary document; hot NMP per the June 2020 revision), so any process needing to remove ADEX after cure should test the specific removal route against the actual cure history rather than assume either figure applies unconditionally.", "developerFamily": "solvent", "references": [], "provenance": { "datasheetUrl": "https://djmicrolaminates.com/wp-content/uploads/2020/08/DJML-ADEX-Data-Sheet.pdf", "datasheetVersionOrDate": "No printed revision date on the document itself. This is the exact file currently linked from djmicrolaminates.com's Resources / 'Data Sheets / Research Papers' page as the 'ADEX Data Sheet' (djmicrolaminates.com fetched directly -- no third-party mirror was needed, unlike the Kayaku SU-8 entries in this library). The original longlist URL (https://djmicrolaminates.com/wp-content/uploads/DJML-ADEX-Data-Sheet.pdf, missing the /2020/08/ upload-date folder segment) returns HTTP 404; the /2020/08/ path is the live, currently-linked location of the same filename.", "accessedDate": "2026-07-22", "secondarySources": [ { "url": "https://djmicrolaminates.com/wp-content/uploads/2020/06/ADEX-Data-Sheet-June-2020.pdf", "what": "ADEX (R) Thin Film Rolls/Sheets Product Data Sheet, Rev June 2020, Copyright 2020 -- an earlier/sibling revision of the same product, not currently linked from the live site's Resources page. Used to cross-check the primary datasheet's process table (the two documents' dose / develop-time / resolution figures are identical at every thickness) and to source the explicit 'Rev June 2020' date label the primary document lacks. Minor wording/figure differences from the primary document: shelf life is longer in this revision (12/6 months vs. the primary's 18-24/12 months), its Clean Up section calls the acetone step 'prior to cure' rather than 'prior to PEB', and its removal guidance names hot NMP rather than laser ablation." } ] }, "tier": "datasheet", "dateAdded": "2026-07-22", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "apol-lo-3200", "name": "APOL-LO 3200", "manufacturer": "KemLab", "productLine": "APOL-LO 3200 series", "aliases": [ "APOL-LO 3200", "APOL-LO3200", "APOL LO 3200", "KemLab APOL-LO 3200", "APOL-LO3202", "APOL-LO3204", "APOL-LO3207", "APOL LO 3202", "APOL LO 3207" ], "grades": [ "APOL-LO 3202", "APOL-LO 3204", "APOL-LO 3207" ], "gradesSource": "stated — APOL-LO 3200 TDS, per-grade 'Film Thickness Range' table (p.2): APOL-LO 3202 (2-4 µm), APOL-LO 3204 (3-6 µm), APOL-LO 3207 (5-10+ µm). 3202 and 3207 also head the resolution-demo blocks on p.1; 3204 appears only in the p.2 table.", "tone": "negative", "chemistry": null, "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet. APOL-LO 3200 is presented as a negative lift-off resist for conventional binary patterning, not grayscale lithography.", "status": "active", "successorSlug": null, "summary": "A series of negative-tone, high-resolution lift-off photoresists (APOL-LO 3202, 3204, 3207) covering 2-10+ µm film thickness, developed in 0.26N TMAH for i-line and broadband exposure, with customizable lift-off undercut angle and photospeed.", "thicknessRange": { "min_um": 2, "max_um": 10, "basis": "stated", "source": "stated — TDS bullet (p.1): 'Film Thickness range of 2 – 10+ µm'; corroborated by the per-grade 'Film Thickness Range' table on p.2 (APOL-LO 3202: 2-4, APOL-LO 3204: 3-6, APOL-LO 3207: 5-10+ µm). max_um is recorded as 10 because '10+' is an open-ended stated bound, not a precise number." }, "spinCurves": [ { "label": "APOL-LO 3202", "points": [ { "rpm": 1000, "um": 3.8 }, { "rpm": 2000, "um": 2.7 }, { "rpm": 3000, "um": 2.3 }, { "rpm": 4000, "um": 1.9 } ], "source": "read from figure 'Spin Curve: APOL-LO 3200 Series', p.2 of APOL-LO 3200 TDS — identified by legend marker/color (blue diamonds = APOL-LO 3202) on the combined three-curve chart; bottom curve, consistent with the stated 2-4 µm range. The chart itself only plots 1000-4000 rpm (4 marked points per curve) — no 5000/6000 rpm points exist in the source to report.", "figureRead": true }, { "label": "APOL-LO 3204", "points": [ { "rpm": 1000, "um": 6.2 }, { "rpm": 2000, "um": 4.5 }, { "rpm": 3000, "um": 3.7 }, { "rpm": 4000, "um": 3.2 } ], "source": "read from figure 'Spin Curve: APOL-LO 3200 Series', p.2 of APOL-LO 3200 TDS — identified by legend marker/color (red squares = APOL-LO 3204) on the combined three-curve chart; middle curve, consistent with the stated 3-6 µm range. Chart plots only 1000-4000 rpm.", "figureRead": true }, { "label": "APOL-LO 3207", "points": [ { "rpm": 1000, "um": 10.2 }, { "rpm": 2000, "um": 7.2 }, { "rpm": 3000, "um": 5.7 }, { "rpm": 4000, "um": 5 } ], "source": "read from figure 'Spin Curve: APOL-LO 3200 Series', p.2 of APOL-LO 3200 TDS — identified by legend marker/color (purple triangles = APOL-LO 3207) on the combined three-curve chart; top curve, consistent with the stated 5-10+ µm range. Chart plots only 1000-4000 rpm.", "figureRead": true } ], "spinNotes": "Coat program includes a 5-10 second spread cycle; spin time at final speed is 45 seconds. Spin curves determined on 6-inch Si with static dispense of ~3 mL of photoresist (TDS p.2, Spin Coat) — note this is a smaller dispense volume than the ~4 mL used for KemLab's other series datasheets. No edge-bead-removal step is published.", "adhesion": { "hmds": true, "notes": "APOL-LO adheres to gold, glass, aluminum, chromium and copper without a stated primer requirement; for silicon specifically, HMDS primer 'can increase adhesion' (TDS p.2, Substrate)." }, "rehydration": null, "softbake": { "temp_c": 110, "time_s": 60, "method": "hotplate", "notes": "110°C for 60 seconds is the default softbake, stated both in the narrative Soft Bake section (p.2) and in three of four columns (2, 4, 6 µm) of the Lift-Off Process Guide table (p.2). The datasheet gives an explicit, clearly labeled exception: 'For films over 7 microns: Soft-bake on hotplate: 110°C for 90 seconds' — used for the 10 µm (APOL-LO 3207) process point in the same table.", "source": "Lift-Off Process Guide table and Soft Bake section, p.2 of APOL-LO 3200 TDS" }, "exposureDose": { "doses": [], "basisCopy": "Three grades share one set of broadband-on-silicon numbers, indexed by coat: 140 mJ/cm² at 2 µm, 145 at 4 µm, 150 at 6 µm and 200 at 10 µm." }, "peb": { "temp_c": 110, "time_s": 60, "notes": "PEB is explicitly necessary (unlike most positive resists in this manufacturer's catalog): 'PEB is necessary to crosslink the photoresist. PEB can be changed to modify performance' (p.2). 110°C for 60 seconds is the default, stated in both the narrative Post-Exposure Bake section and three of four columns (2, 4, 6 µm) of the process table. Explicit exception: 'For films over 7 microns: PEB on contact hotplate: 110°C for 90 seconds' — used for the 10 µm (APOL-LO 3207) process point.", "source": "Lift-Off Process Guide table and Post-Exposure Bake section, p.2 of APOL-LO 3200 TDS" }, "floodExposure": null, "develop": { "developer": "0.26N TMAH", "dilution": null, "time_s": null, "method": null, "rinse": null, "source": "Lift-Off Process Guide table, p.2, and Develop section, p.3 of APOL-LO 3200 TDS" }, "hardbake": null, "descum": null, "applications": [ "lift-off", "general-prototyping" ], "etchResistance": null, "liftoffSuitable": true, "platingSuitable": null, "stripper": "NMP, DMSO or similar solvent-based removers at 50-80°C (TDS p.3, Photoresist Removal). No two-bath-process guidance is given for this product (unlike the KL5300/KL6000/KL IR datasheets, which explicitly recommend one for thick films).", "storage": "Store upright in tightly closed containers at 40-70°F (4-21°C), away from oxidizers, acids, bases and ignition sources (TDS p.3, Storage).", "notes": "APOL-LO 3200 is a series of three grades (APOL-LO 3202, 3204, 3207) explicitly engineered for a lift-off undercut profile, with customization offered to adjust the lift-off angle or photospeed. Unlike most conventional positive resists, PEB here is a required crosslinking step, not an optional one — the datasheet flags that PEB conditions 'can be changed to modify performance,' making it a tunable process lever rather than a fixed step. Softbake and PEB share one explicit thickness break point: films over 7 µm (i.e. the APOL-LO 3207 10 µm process point) get 90 s instead of 60 s at the same 110°C, while exposure dose and develop time scale continuously with thickness across all four demonstrated process points (2/4/6/10 µm). An n,k optical-dispersion curve (200-500 nm) is published for lithography simulation. As with any lift-off resist, the achieved undercut profile — not just critical dimension — should be verified on-tool, since it is the property this product is specifically sold on.", "developerFamily": "tmah", "provenance": { "datasheetUrl": "https://www.kemlab.com/_files/ugd/5b8579_a8dd77c4036e4f199a9a6c899311b7c8.pdf", "datasheetVersionOrDate": "not stated — no revision or copyright date is printed anywhere in this TDS; the only certification mark present is an ISO 9001:2015 seal on the final page.", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": true }, { "slug": "ar-n-4340", "name": "AR-N 4340", "manufacturer": "Allresist", "productLine": "AR-N 4300 series", "aliases": [ "ARN4340", "AR-N4340" ], "tone": "negative", "chemistry": "car", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not marketed for greyscale or 3D lithography; targeted at IC production with high-contrast (Contrast: 5.0), high-resolution (0.5 µm) binary patterning.", "status": "active", "successorSlug": null, "summary": "AR-N 4340 is Allresist's highly sensitive chemically amplified negative-tone photoresist for integrated-circuit fabrication, coating 1.4 µm at 4000 rpm, i-line/g-line/broadband sensitive, with undercut lift-off profiles obtainable by extending development time.", "thicknessRange": { "min_um": 1.4, "max_um": 2, "basis": "stated", "source": "stated — two concrete example film thicknesses are named for AR-N 4340 in the datasheet's own SEM-example captions: 1.4 µm ('Resist structures' figure, 0.7 µm L/S) and 2.0 µm ('Structure resolution' figure, 4.0 µm structure), the former matching the reference 'Film thickness/4000 rpm (µm): 1.4' value in the Properties I table. Not a stated achievable min-max range in prose, and not a curve span — the spin-coating notes explain why the figure's fuller range is not used here." }, "spinCurves": [ { "label": "AR-N 4340", "points": [ { "rpm": 500, "um": 4.16 }, { "rpm": 1000, "um": 2.95 }, { "rpm": 2000, "um": 2.09 }, { "rpm": 3000, "um": 1.71 }, { "rpm": 4000, "um": 1.47 }, { "rpm": 5000, "um": 1.31 }, { "rpm": 6000, "um": 1.21 } ], "source": "read from figure, 'Spin curve' (D₀/µm 0.0–5.0 vs rpm 0–8000), p.50 of Allresist AR-N 4300 product-information sheet (as of January 2014); single-grade chart, one legended trace labeled 'AR-N 4340' — no curve-identification ambiguity. Seven diamond markers are plotted, at rpm 500/1000/2000/3000/4000/5000/6000; the fitted line continues unmarked to 8000 rpm at ~1.05 µm, and that tail carries no discrete marker so it is not read as a point. The figure's 4000 rpm marker reads ≈1.47 µm, about 5% above the Properties I table's printed 'Film thickness/4000 rpm (µm): 1.4' (p.50, cross-referenced by the Coating box, p.51: '4000 rpm, 60 s, 1.4 µm') — the table value is the more authoritative single number, the figure read close but not exact.", "figureRead": true } ], "spinNotes": "Spin-speed-vs-thickness figure ('Spin curve', p.50, axes D₀/µm 0-5.0 vs rpm 0-8000) is a single-grade chart: one legended AR-N 4340 trace with 7 diamond markers from 500-6000 rpm, anchored against the Properties I table's 4000 rpm -> 1.4 µm reference point (the figure's own 4000 rpm marker reads ≈1.47 µm, a ~5% deviation from the table value — both are recorded). No dispense volume, acceleration ramp, or edge-bead-removal step is described anywhere in this document.", "adhesion": { "hmds": null, "notes": "Datasheet specifies Allresist's own adhesion promoter AR 300-80 (Process chemicals table, p.50); does not mention HMDS specifically either way. 'Good adhesion' is listed as a general Characteristic (p.50)." }, "rehydration": null, "softbake": { "temp_c": 90, "time_s": 60, "method": "hotplate", "notes": "± 1 °C tolerance. Alternative: 85 °C, 25 min (1500 s) convection oven. Datasheet calls this step 'Softbake' in the Process conditions diagram and 'Tempering' in the Process parameters table (85 °C, 60 s, hot plate — note this table gives a slightly different temperature, 85 °C not 90 °C, for the same nominal step; both are reproduced here for transparency).", "source": "Process conditions diagram, p.51; Process parameters table, p.50" }, "exposureDose": { "doses": [ { "wavelength_nm": null, "value_mJcm2": 140, "source": "Process conditions diagram, p.51 of Allresist AR-N 4300 series product information (English); dose stated as \"Exposure dose (E0, broadband UV stepper): 140 mJ/cm², 1.4 µm\"." } ], "basisCopy": "140 mJ/cm² is a clearing dose, not a process dose: it is the energy that just clears a 1.4 µm film on a broadband stepper carrying 365, 405 and 436 nm together. No single-wavelength number is published." }, "peb": { "temp_c": 95, "time_s": 120, "notes": "Referred to as 'Crosslinking bake' — this is the post-exposure step that crosslinks the exposed novolac/PAG/amine system into the negative image. ± 1 °C tolerance. Alternative: 90 °C, 25 min (1500 s) convection oven. A TCD (time-to-clear-development)-vs-bake-temperature table (p.51) shows this crosslinking bake temperature is critical: at 70 °C the clearing dose is 480 mJ/cm² (TCD 20 s), at 100 °C it drops to 65 mJ/cm² (TCD 41 s), and above 130 °C the resist 'is not developable any more'; optimum bake temperatures are stated as 90-100 °C.", "source": "Process conditions diagram, p.51; TCD vs. bake temperature table, p.51" }, "floodExposure": null, "develop": { "developer": "AR 300-475", "dilution": null, "time_s": 60, "method": "puddle", "rinse": "DI-H2O, 30 s", "source": "Process conditions diagram, p.51; Process parameters table, p.50" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "Datasheet states only an optional ceiling capability — 'Hardening of structures up to 300 °C (optional)' — without a specific temperature/time recipe or bake method (hotplate vs. oven). A related 'Customer-specific technologies' step lists a 150 mJ/cm² flood exposure followed by a 115 °C, 1 min hot-plate bake for 'generation of e.g. semiconductor properties or lift-off' — distinct from the AR-U 4000 series' true image-reversal flood-exposure step, and not an image-reversal step for this resist.", "source": "Process conditions diagram, p.51" }, "descum": null, "applications": [ "etch-mask", "lift-off" ], "etchResistance": "\"Plasma etching resistant, temperature-stable up to 220 °C after subsequent treatment\" (Characteristics, p.50). Plasma etching rates (5 Pa, 240-250 V Bias, Properties II table, p.50): Ar-sputtering 8 nm/min, O2 173 nm/min, CF4 33 nm/min, 80% CF4 + 16% O2 93 nm/min.", "liftoffSuitable": true, "platingSuitable": null, "stripper": "AR 300-76 or AR 300-72 (Process chemicals table, p.50); alternatively AR 300-76 or O2 plasma ashing per the Process conditions diagram, p.51.", "storage": "\"Storage 6 month (°C): 10 - 18\" (Properties I table, p.50) — i.e. a 6-month shelf life is stated when stored at 10-18 °C.", "notes": "AR-N 4340 is Allresist's highly sensitive negative-tone photoresist in the AR-N 4300 series, described as 'novolac with photochemical acid generator and amine-based crosslinking agent' — a chemically amplified negative chemistry (mapped here to the 'car' enum value) rather than the older bisazide-novolak crosslinking chemistry used in resists like ma-N 1400. Development strongly depends on the crosslinking-bake temperature: the datasheet's own TCD table shows optimum crosslinking-bake temperatures of 90-100 °C, with clearing dose rising sharply outside that window (480 mJ/cm² at 70 °C vs. 65 mJ/cm² at 100 °C) and the resist becoming completely undevelopable above 130 °C. Undercut (lift-off) profiles are obtained not by underexposing but by extending development time at the resist's minimum clearing dose, per the datasheet's explicit recommendation. The published exposure dose (140 mJ/cm² for a 1.4 µm film) is a broadband figure spanning i-line/h-line/g-line together (365/405/436 nm) rather than a single-wavelength dose, so it is recorded as an unattributed value rather than filed under either the i-line or h-line field — a separately mentioned i-line-only stepper configuration (NA 0.65) is given no dose at all. A single-grade spin-speed-vs-thickness figure exists in the datasheet (0-8000 rpm, 0-5 µm), but only the exact 4000 rpm -> 1.4 µm anchor from the accompanying numeric table is published here as structured data; additional curve points should be read directly from the source figure by a human reviewer.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Multi-photon laser lithography of AR-N 4340 photoresist with a spatial resolution at nanoscale", "authors": "Cao et al.", "journal": "Proc. SPIE 10842, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Subdiffraction-limited Plasmonic Lithography and Innovative Manufacturing Technology", "year": 2019, "doi": "10.1117/12.2506365", "url": "https://doi.org/10.1117/12.2506365", "accessedDate": "2026-07-16", "summary": "Direct-write multi-photon laser lithography of AR-N 4340, reporting nanoscale spatial resolution. Relevant here because it exercises this chemically amplified negative resist under focused-laser direct writing rather than the mask-aligner exposure the datasheet describes.", "note": "Names this exact grade (AR-N 4340) in its title. SPIE conference proceedings, not a journal article. Only the title and Crossref metadata could be verified in-session (the SPIE abstract page would not render); the summary paraphrases the title and claims nothing beyond it." } ], "provenance": { "datasheetUrl": "https://www.allresist.com/wp-content/uploads/sites/2/2016/12/allresist_produktinfos_ar-n4300_englisch.pdf", "datasheetVersionOrDate": "p.50: 'As of January 2014'; p.51: 'As of January 2016' (the two pages of this two-page spread carry different revision dates as printed)", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.allresist.com/portfolio-item/developer-ar-300-475/", "what": "Allresist's own product page for developer AR 300-475: gives its main component as TMAH and its metal-ion content as under 0.1 ppm. Read together with the AR 300-26 page (sodium borate / sodium hydroxide) and the AR 300-35 page (sodium metasilicate / phosphate), it establishes that the developers this resist's own \"Development recommendations\" table offers span both a metal-ion-free and a metal-ion-containing chemistry." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": true }, { "slug": "ar-p-3510t", "name": "AR-P 3510T", "manufacturer": "Allresist", "productLine": "AR-P 3500 series", "aliases": [ "AR-P 3510 T" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Document never mentions grayscale or 3D lithography; it targets standard binary IC patterning, plasma-etch masking, and lift-off.", "status": "active", "successorSlug": null, "summary": "Positive-tone, DNQ-novolak resist from Allresist's AR-P 3500 series with a wide process range (broadband UV / i-line / g-line); AR-P 3510T is the TMAH-compatible ('T') variant of the 3510 grade, coating to 2.0 µm at 4000 rpm and rated suitable for 0.26 N TMAH developer.", "thicknessRange": { "min_um": 2, "max_um": 2, "basis": "stated", "source": "stated — the 'Film thickness / 4000 rpm (µm)' row in 'Properties I' (p.1) gives 2.0 µm as a SINGLE value spanning the whole 'AR-P 3510 / 3510 T' column pair (unlike the adjacent solids-content/viscosity/resolution/contrast rows, which ARE split per grade) — i.e. the document itself states this thickness is shared between the base and T grades. Confirmed again by the worked 'Coating' row of the process-conditions table: '4000 rpm, 60 s, 2.0 µm' under its 'AR-P 3510' example column. No independent min–max achievable range is stated for this grade; recorded as a single documented anchor, not a spread." }, "spinCurves": [], "spinNotes": "The 'Spin curve' figure (p.1, bottom-left; axes: film thickness 1.0–6.0 µm vs. spin speed 0–8000 rpm) plots TWO traces, and per the manufacturer's OWN legend each trace already covers a combined pair of grades: 'AR-P 3510/3510 T' as one trace, 'AR-P 3540/3540 T' as the other — this document itself, not an extraction error, presents 3510 and 3510T as sharing one spin curve. No numeric spin table accompanies that figure, so no curve is published for this grade. The only confirmed numeric anchor is 2.0 µm at 4000 rpm, 60 s spin time (from the 'Coating' row of the worked process-conditions table, p.1, 'AR-P 3510' column — unsplit for this grade pair per the Properties I table). No accel or edge-bead detail is published.", "adhesion": { "hmds": false, "notes": "Manufacturer states 'very good adhesion properties' as a series-wide (AR-P 3500(T)) characteristic. The 'Process chemicals' box (p.1) names AR 300-80 as the adhesion promoter — NOT HMDS — but that box is positioned alongside the AR-P 3540T worked example specifically, so it is not confirmed to be identical for AR-P 3510T; included here as the only adhesion-promoter product named anywhere in this document." }, "rehydration": null, "softbake": { "temp_c": 100, "time_s": 60, "method": "hotplate", "notes": "'Tempering (± 1 °C): 100 °C, 1 min, hot plate OR 95 °C, 25 min, convection oven' — this row of the worked process-conditions table (p.1) is NOT split between the table's two example columns (AR-P 3510, AR-P 3540 T), i.e. it is presented as one shared condition for the worked AR-P 3500(T) example, which is why it is attributed to AR-P 3510T here despite that exact SKU not being one of the two labeled columns. Oven alternative: 95 °C for 25 min (1500 s).", "source": "\"Tempering\" row, \"Process conditions\" table, p.1, of allresist_produktinfos_ar-p3500_3500t_englisch.pdf" }, "exposureDose": { "doses": [], "basisCopy": "Allresist splits exposure dose by grade and the T variant gets no column of its own — the two grades that do are 55 mJ/cm² for AR-P 3510 and 120 mJ/cm² for AR-P 3540 T. Neither is published as this grade's dose." }, "peb": null, "floodExposure": null, "develop": { "developer": "AR 300-26 (1:2) or AR 300-35 (undiluted) or AR 300-44", "dilution": "AR 300-26 at 1:2; AR 300-35 used undiluted; AR 300-44 listed as the third (ready-to-use) option — three alternative developer/dilution combinations named for the combined 'AR-P 3510 T, 3540 T' row of the 'Development recommendations' table (p.1). This differs from the base AR-P 3510/3540 row, which instead lists AR 300-26 at 1:5, AR 300-35 at 1:1, and 'AR 300-40 (300-47), 1:1'.", "time_s": null, "method": "puddle", "rinse": "DI-H2O, 30 s", "source": "\"Development recommendations\" table (AR-P 3510 T, 3540 T row) + \"Development\"/\"Rinse\" rows of the \"Process conditions\" table, p.1, of allresist_produktinfos_ar-p3500_3500t_englisch.pdf" }, "hardbake": { "temp_c": 115, "time_s": 60, "notes": "Labeled 'Post-bake (optional)' in the source, not 'hardbake', but functionally the same post-develop bake step: 115 °C, 1 min hot plate, OR 115 °C, 25 min (1500 s) convection oven. This row is unsplit across the table's two example columns (AR-P 3510, AR-P 3540 T), so attributed here to AR-P 3510T on the same reasoning as softbake.", "source": "\"Post-bake (optional)\" row, \"Process conditions\" table, p.1, of allresist_produktinfos_ar-p3500_3500t_englisch.pdf" }, "descum": null, "applications": [ "lift-off", "etch-mask" ], "etchResistance": "Manufacturer states the AR-P 3500(T) series is 'plasma etching resistant, temperature-stable up to 120 °C' (Characterisation, series-wide, p.1). A 'Plasma etching rates (nm/min)' table (5 Pa, 240–250 V bias: Ar-sputtering 7, O2 165, CF4 37, 80 CF4 + 16 O2 88) is given but is grouped with the AR-P 3540T-labeled Cauchy coefficients, so it is not confirmed to represent AR-P 3510T specifically and is not carried into a numeric field here.", "liftoffSuitable": true, "platingSuitable": null, "stripper": "AR 300-70 or O2 plasma ashing (\"Removal\" row, \"Process conditions\" table, p.1 — unsplit, shared across the worked example). Note: a separate 'Process chemicals' box elsewhere on p.1, positioned alongside the AR-P 3540T worked example, instead lists 'Remover AR 300-76, T: AR 300-76' — that box is not confirmed to apply to AR-P 3510T and is not used as the primary value here.", "storage": "10–18 °C, approximately 6-month shelf life (\"Storage 6 month (°C)\" row, \"Properties I\" table, p.1 — a single value spanning both the 3510/3510T and 3540/3540T column groups).", "notes": "AR-P 3510T is the TMAH-compatible ('T') variant of Allresist's AR-P 3510 grade within the wider AR-P 3500(T) series, a classic DNQ/novolac positive resist for IC production with broadband UV / i-line / g-line sensitivity. The manufacturer states the 3500T sub-line is 'suitable for TMAH developer 0.26 n', distinguishing it from the base (non-T) grades. Several process parameters in this document are given only for the two SPECIFIC worked example columns the table actually labels — 'AR-P 3510' (base) and 'AR-P 3540 T' — and NOT for 'AR-P 3510 T' itself; most notably the exposure dose (55 vs. 120 mJ/cm² for the two shown grades) is clearly grade-sensitive, so no dose is recorded here rather than borrowing the base grade's number. By contrast, film thickness at 4000 rpm (2.0 µm) and the spin-curve figure are explicitly shared/combined between 3510 and 3510T by the manufacturer's own table structure and legend. A large block of dose-range, depth-of-focus, and SEM linearity/dark-field-erosion data on p.1 (bottom) and all of p.2 is explicitly labeled 'AR-P 3540 T' and belongs to that different grade, not to AR-P 3510T — excluded here despite the superficially similar SKU name.", "developerFamily": "tmah-or-buffered-alkaline", "provenance": { "datasheetUrl": "https://www.allresist.com/wp-content/uploads/sites/2/2014/03/allresist_produktinfos_ar-p3500_3500t_englisch.pdf", "datasheetVersionOrDate": "As of January 2014", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.allresist.com/portfolio-item/developer-ar-300-44/", "what": "Allresist's own product page for developer AR 300-44: gives its main component as TMAH and its metal-ion content as under 0.1 ppm. Read together with the AR 300-26 page (sodium borate / sodium hydroxide) and the AR 300-35 page (sodium metasilicate / phosphate), it establishes that the developers this resist's own \"Development recommendations\" table offers span both a metal-ion-free and a metal-ion-containing chemistry." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "ar-p-5350", "name": "AR-P 5350", "manufacturer": "Allresist", "productLine": "AR-P 5300 series", "aliases": [], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Document never mentions grayscale or 3D lithography; the series is purpose-built for undercut/lift-off profiles, not grayscale relief.", "status": "active", "successorSlug": null, "summary": "Positive-tone, DNQ-novolak resist purpose-built for lift-off from Allresist's AR-P 5300 series; AR-P 5350 is the thinner, higher-resolution grade (1.0 µm at 4000 rpm, 0.5 µm resolution) whose elevated softbake temperature generates the undercut profile needed for clean metal lift-off.", "thicknessRange": { "min_um": 1, "max_um": 1, "basis": "stated", "source": "stated — the 'Film thickness/4000 rpm (µm)' row in 'Properties I' (p.1) gives 1.0 µm for AR-P 5350, confirmed independently by the worked 'Coating' row of the 'Process conditions' table (p.2): '4000 rpm, 60 s, 1.0 µm', AR-P 5350 column. No min–max achievable range is stated for this grade; recorded as a single documented anchor, not a spread." }, "spinCurves": [ { "label": "AR-P 5350", "points": [ { "rpm": 1000, "um": 1.96 }, { "rpm": 1500, "um": 1.58 }, { "rpm": 2000, "um": 1.38 }, { "rpm": 3000, "um": 1.11 }, { "rpm": 4000, "um": 1.01 }, { "rpm": 6000, "um": 0.78 }, { "rpm": 7000, "um": 0.73 } ], "source": "read from figure, 'Spin curve' (D₀/µm 0.0–12.0 vs rpm 0–8000), p.1 of AR-P5300_english_Allresist_product_information.pdf (Allresist, as of January 2018 per p.1 footer); two individually-legended traces plotted together — the lower diamond-marker trace explicitly labeled 'AR-P 5350' beside its rightmost point (the upper square-marker trace is the separately labeled 'AR-P 5320', not extracted here); 7 diamond markers at rpm 1000/1500/2000/3000/4000/6000/7000 (no marker is plotted at 5000 rpm — the line passes through that gap unmarked — and both traces terminate at 7000 rpm, not extending to the axis's 8000 rpm end). The figure's 4000 rpm marker reads ≈1.01 µm, matching the Properties I table's printed 'Film thickness/4000 rpm (µm): 1.0' for AR-P 5350 (p.1) and the Coating row of the process-conditions table (p.2: '4000 rpm, 60 s, 1.0 µm').", "figureRead": true } ], "spinNotes": "Spin-speed-vs-thickness figure ('Spin curve', p.1, axes D₀/µm 0.0-12.0 vs rpm 0-8000) carries two separately labeled traces, AR-P 5320 (upper) and AR-P 5350 (lower) — only the AR-P 5350 trace is plotted here, from its 7 diamond markers between 1000-7000 rpm (no marker at 5000 rpm; the trace does not extend to 8000 rpm). The figure's own 4000 rpm marker reads ≈1.01 µm, matching the Properties I table's 1.0 µm anchor closely.", "adhesion": { "hmds": false, "notes": "Manufacturer states 'good adhesion properties' as a series-wide characteristic. The 'Process chemicals' box (p.1, general/series-wide, not tied to either grade's SEM caption) names AR 300-80 as the adhesion promoter — not HMDS." }, "rehydration": null, "softbake": { "temp_c": 105, "time_s": 240, "method": "hotplate", "notes": "105 °C, 4 min hot plate — confirmed identically in two places: the 'Process parameters' box (p.1, explicitly labeled 'AR-P 5350' worked example) and the 'Tempering' row of the process-conditions table (p.2, which also gives a convection-oven alternative: 100 °C, 40 min = 2400 s). Processing instructions (p.2) note: 'Higher tempering temperatures are required to produce the undercut' — the elevated bake (vs. a typical ~90–100 °C positive-resist softbake) is deliberate and load-bearing for the lift-off undercut profile, not incidental.", "source": "\"Process parameters\" box, p.1 (AR-P 5350) + \"Tempering\" row, \"Process conditions\" table, p.2, of AR-P5300_english_Allresist_product_information.pdf" }, "exposureDose": { "doses": [ { "wavelength_nm": null, "value_mJcm2": 55, "source": "\"UV exposure\" and \"Exposure dose\" rows, \"Process conditions\" table, p.2, AR-P 5350 column, of AR-P5300_english_Allresist_product_information.pdf" } ], "basisCopy": "The 55 mJ/cm² clearing dose is Allresist's figure for this grade, measured on a broadband stepper spanning 365, 405 and 436 nm alongside its 1.0 µm reference coat; no single-wavelength dose is published." }, "peb": null, "floodExposure": null, "develop": { "developer": "AR 300-35 (primary, fully worked example); AR 300-26 or AR 300-47 listed as alternatives", "dilution": "AR 300-35 at 1:2 (worked example); alternatively AR 300-26 at 1:7, or AR 300-47 at 2:3 — per the 'Development recommendations' table, AR-P 5350 row", "time_s": 60, "method": "puddle", "rinse": "DI-H2O, 30 s", "source": "\"Process parameters\" box, p.1 (AR-P 5350) + \"Development\"/\"Rinse\" rows of the \"Process conditions\" table, p.2 + \"Development recommendations\" table, p.2 (AR-P 5350 row), of AR-P5300_english_Allresist_product_information.pdf" }, "hardbake": null, "descum": null, "applications": [ "lift-off", "etch-mask" ], "etchResistance": "Manufacturer states the series is 'plasma etching resistant, temperature stable up to 120 °C' (Characterisation, series-wide, p.1). A 'Plasma etching rates (nm/min)' table (5 Pa, 240–250 V bias: Ar-sputtering 7, O2 161, CF4 39, 80 CF4 + 16 O2 90) is given but is NOT labeled to a specific grade in this document (unlike the sibling AR-P 3500/3500T sheet, where an equivalent table WAS explicitly tagged). The glass-transition temperature (108 °C) and dielectric constant (3.1) given alongside it are numerically IDENTICAL to the same two fields in the AR-P 3500/3500T sheet, so these figures may be generic Allresist-family boilerplate rather than AR-P 5350-specific measurements.", "liftoffSuitable": true, "platingSuitable": null, "stripper": "AR 300-76 or O2 plasma ashing (\"Removal\" row, \"Process conditions\" table, p.2, shared/unsplit across both grades). The 'Process chemicals' box (p.1, series-wide) additionally lists AR 600-71 as an alternative remover.", "storage": "10–18 °C, approximately 6-month shelf life (\"Storage 6 month (°C)\" row, \"Properties I\" table, p.1 — a single value shared across the AR-P 5320 and AR-P 5350 columns).", "notes": "AR-P 5350 is the thinner (1.0 µm at 4000 rpm), higher-contrast, higher-resolution (0.5 µm) grade of Allresist's AR-P 5300 series, a DNQ/novolac positive resist purpose-built for lift-off. Unlike most positive resists, an elevated softbake (105 °C, 4 min — well above a typical ~90–100 °C positive-resist prebake) deliberately produces the negative-sloped undercut profile needed for clean metal lift-off; the manufacturer states this explicitly ('higher tempering temperatures are required to produce the undercut'). Post-bake is explicitly 'Not required' for this series (process-conditions table, p.2). Development is aqueous-alkaline (AR 300-35, 1:2, 60 s in the fully worked example, confirmed twice in the document); AR 300-26 (1:7) and 'AR 300-47' (2:3) are named as alternatives with no stated time. The two-page source disagrees with itself on revision date: page 1's footer reads 'As of January 2018', page 2's reads 'As of January 2017' — both as printed, unreconciled.", "developerFamily": "tmah-or-buffered-alkaline", "provenance": { "datasheetUrl": "https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-P5300_english_Allresist_product_information.pdf", "datasheetVersionOrDate": "Inconsistent across pages: 'As of January 2018' (p.1 footer) vs. 'As of January 2017' (p.2 footer) — recorded verbatim, not reconciled.", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.allresist.com/portfolio-item/developer-ar-300-47/", "what": "Allresist's own product page for developer AR 300-47: gives its main component as TMAH and its metal-ion content as under 0.1 ppm. Read together with the AR 300-26 page (sodium borate / sodium hydroxide) and the AR 300-35 page (sodium metasilicate / phosphate), it establishes that the developers this resist's own \"Development recommendations\" table offers span both a metal-ion-free and a metal-ion-containing chemistry." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "ar-u-4030", "name": "AR-U 4030", "manufacturer": "Allresist", "productLine": "AR-U 4000 series", "aliases": [ "ARU4030", "AR-U4030" ], "tone": "image-reversal", "chemistry": "bisazide-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not marketed for greyscale or 3D lithography; targets binary IC patterning, switchable between positive-tone and negative/image-reversal-tone processing of the same coated film.", "status": "active", "successorSlug": null, "summary": "AR-U 4030 is Allresist's image-reversal photoresist in the AR-U 4000 series, a novolac/bisazide negative formulation that can also be run as an ordinary positive resist, coating roughly 1.8-2.5 µm and producing pronounced undercut lift-off profiles when processed with an image-reversal bake plus flood exposure.", "thicknessRange": { "min_um": 1.8, "max_um": 2.5, "basis": "stated", "source": "stated — two concrete example film thicknesses are named for AR-U 4030 in the datasheet: the reference 'Film thickness/4000 rpm (µm): 1.8' (Properties I table, p.32, matching the Coating boxes on both process diagrams), and the 'Structure resolution' SEM example caption 'AR-U 4030, Undercut negative structures at a film thickness of 2.5 µm' (p.32). Not a stated achievable min-max range in prose, and not a curve span — the spin-coating notes explain why the figure's fuller range is not used here." }, "spinCurves": [ { "label": "AR-U 4030", "points": [ { "rpm": 1000, "um": 4.12 }, { "rpm": 2000, "um": 2.93 }, { "rpm": 3000, "um": 2.4 }, { "rpm": 4000, "um": 2.09 }, { "rpm": 5000, "um": 1.89 }, { "rpm": 6000, "um": 1.79 } ], "source": "read from figure, 'Spin curve' (D₀/µm 0-6.0 vs rpm 0-8000), p.32 of Allresist AR-U 4000 product-information sheet (as of January 2017); multi-grade chart with three individually legended traces — AR-U 4030 (topmost, dark-navy diamonds), AR-U 4040 (middle, red squares), AR-U 4060 (bottom, olive triangles). The topmost trace is AR-U 4030 two ways: its marker colour matches the dark-navy 'AR-U 4030' legend label sitting at that trace's right-hand endpoint, and it sorts correctly against the Properties I table's per-grade nominal 'Film thickness/4000 rpm (µm)' row (AR-U 4030 = 1.8, AR-U 4040 = 1.4, AR-U 4060 = 0.6, p.32) and the Coating-box captions ('4000 rpm, 60 s, 1.8/1.4/0.6 µm', p.33/p.34) — the thickest plotted trace is the grade with the largest nominal thickness. Note a real disagreement inside the datasheet: the figure's own 4000 rpm marker reads 2.09 µm, ~16% above the printed 1.8 µm nominal in the Properties I table and the matching Coating-box captions. The figure is what this curve reports, since the table value is a rounded nominal rather than a reading off this measured curve.", "figureRead": true } ], "spinNotes": "Spin-speed-vs-thickness figure ('Spin curve', p.32, axes D₀/µm 0-6.0 vs rpm 0-8000): genuine multi-grade chart, three individually legended traces (AR-U 4030 topmost/navy, AR-U 4040 middle/red, AR-U 4060 bottom/olive); only the AR-U 4030 (topmost navy diamond) trace is plotted here, from its 6 markers between 1000-6000 rpm. Trace identity is fixed by both the legend colour and the Properties I nominal-thickness ranking (4030=1.8 > 4040=1.4 > 4060=0.6 µm at 4000 rpm, matching the top>mid>bottom trace order). The figure's own 4000 rpm marker (2.09 µm) is ~16% above the Properties I table's printed anchor (1.8 µm) — a genuine figure-vs-table disagreement in the source datasheet; the figure value is the one plotted here. No dispense volume or acceleration ramp is described anywhere in this document.", "adhesion": { "hmds": null, "notes": "Datasheet specifies Allresist's own adhesion promoter AR 300-80 (Process chemicals table, p.32); does not mention HMDS specifically either way." }, "rehydration": null, "softbake": { "temp_c": 90, "time_s": 60, "method": "hotplate", "notes": "Referred to as 'Tempering' in the datasheet. ± 1 °C tolerance. Alternative: 85 °C, 25 min (1500 s) convection oven. Same schedule is used for both the positive-tone and negative/image-reversal processes. Corroborated by Processing instructions prose (p.35): for pure positive-tone use, 'a softbake at only 85 °C (oven) or 90 °C (hot plate) after coating is recommended... since this resist has the potential to be crosslinked due to its specific components.'", "source": "Process conditions diagrams, p.33 (positive) and p.34 (negative); Processing instructions, p.35" }, "exposureDose": { "doses": [ { "wavelength_nm": null, "value_mJcm2": 42, "source": "Process conditions, NEGATIVE (image-reversal) process diagram, p.34 of Allresist AR-U 4000 series product information (English); dose stated as \"Exposure dose (E0, broadband UV stepper): 42 mJ/cm²\". The positive-process diagram on p.33 gives a different dose (38 mJ/cm²) and is deliberately not used." } ], "basisCopy": "42 mJ/cm² is the image-wise dose for the reversal (negative-tone) process; the same resist run straight positive, with no reversal bake and no flood exposure, is published at 38 mJ/cm² instead." }, "peb": { "temp_c": 115, "time_s": 240, "notes": "Referred to as 'Image reversal bake' in the datasheet — occurs after the image-wise exposure and before the flood exposure, and is specific to the negative/image-reversal process (it is not performed in the plain positive-tone process). Alternative: 110 °C, 25 min (1500 s) convection oven. Per Processing instructions (p.35): 'Intensifying the reversal bake supports the formation of vertical walls' for vertical-edge negative structures, while 'low temperature during reversal bake' is one of three levers (alongside low image-wise exposure and extended development time) that increase undercut for lift-off.", "source": "Process conditions negative process diagram, p.34; Processing instructions, p.35" }, "floodExposure": { "dose_mJcm2": 74, "notes": "'Flood exposure: Broadband UV stepper: approx. twice of image-wise without mask' — for AR-U 4030 specifically, 74 mJ/cm² (roughly 1.76x the 42 mJ/cm² image-wise dose). Performed without a mask, after the image reversal bake and before development, and is what converts the still-soluble (unexposed) areas into an alkali-soluble state so the final development produces a negative image. Broadband (365/405/436 nm), not attributed to a single wavelength.", "source": "Process conditions negative process diagram, p.34" }, "develop": { "developer": "AR 300-35", "dilution": "4:3", "time_s": 60, "method": "puddle", "rinse": "DI-H2O, 30 s", "source": "Process conditions negative process diagram, p.34" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "Datasheet explicitly states post-bake is 'Not required' for both the positive and negative processes.", "source": "Process conditions diagrams, p.33 (positive) and p.34 (negative)" }, "descum": null, "applications": [ "image-reversal", "lift-off", "etch-mask" ], "etchResistance": "No qualitative etch-resistance claim is made in the Characteristics list (unlike Allresist's AR-N 4300 sheet); only a raw rate table is given. Plasma etching rates (5 Pa, 240-250 V Bias, Properties II table, p.32): Ar-sputtering 8 nm/min, O2 169 nm/min, CF4 40 nm/min, 80% CF4 + 16% O2 89 nm/min.", "liftoffSuitable": true, "platingSuitable": null, "stripper": "General Process chemicals table (p.32): AR 300-76, AR 300-72. Positive-process removal (p.33): 'AR 300-76 or O2 plasma ashing'. Negative-process removal (p.34): 'AR 300-70 or O2 plasma ashing' — this last figure ('AR 300-70') differs from the AR 300-76 used elsewhere in the same datasheet; reproduced verbatim as printed rather than corrected to 300-76, and flagged here for human verification against the source PDF, p.34, in case it is a distinct product or a transcription variant.", "storage": "\"Storage 6 month (°C): 8 - 12\" (Properties I table, p.32).", "notes": "AR-U 4030 is Allresist's image-reversal resist in the AR-U 4000 series — described as a 'combination of novolac and bisazide' — that can be processed either as an ordinary positive resist or, with an image-reversal bake and flood exposure, as a negative resist with pronounced undercut lift-off profiles. In image-reversal (negative) mode the sequence is: image-wise broadband exposure (42 mJ/cm² for this grade) -> an 'image reversal bake' (115 °C/4 min hotplate, or 110 °C/25 min oven) that crosslinks the exposed areas via the resist's amine component -> an unmasked flood exposure (74 mJ/cm², roughly twice the image-wise dose) that renders the remaining, still-unexposed areas developable -> puddle development in AR 300-35 (4:3). Undercut and vertical-wall profiles are controlled by the same three levers in opposite directions: low image-wise dose + low reversal-bake temperature + longer development time maximizes undercut for lift-off, while high dose + high bake temperature + shorter development time produces vertical walls suited to etch masking. Critically, the image-wise exposure dose differs by process mode for the same grade — 38 mJ/cm² if used as a plain positive resist versus 42 mJ/cm² in the image-reversal negative mode — so the two figures must not be conflated; this recipe records the negative/image-reversal dose since that matches the resist's headline classification (tone: image-reversal), with the positive-mode figure noted separately. No h-line- or i-line-isolated dose is published anywhere; both the 42 mJ/cm² image-wise and 74 mJ/cm² flood-exposure doses are broadband (365/405/436 nm) figures.", "developerFamily": "tmah-or-buffered-alkaline", "provenance": { "datasheetUrl": "https://www.allresist.com/wp-content/uploads/sites/2/2016/12/allresist_produktinfos_ar-u4000_englisch.pdf", "datasheetVersionOrDate": "As of January 2017", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.allresist.com/portfolio-item/developer-ar-300-47/", "what": "Allresist's own product page for developer AR 300-47: gives its main component as TMAH and its metal-ion content as under 0.1 ppm. Read together with the AR 300-26 page (sodium borate / sodium hydroxide) and the AR 300-35 page (sodium metasilicate / phosphate), it establishes that the developers this resist's own \"Development recommendations\" table offers span both a metal-ion-free and a metal-ion-containing chemistry." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "az-10xt", "name": "AZ 10XT", "manufacturer": "Merck", "productLine": "AZ 10XT Series", "aliases": [ "AZ 10XT Series", "10XT" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not address grayscale or 3D patterning for AZ 10XT; no such use is claimed anywhere in the document.", "status": "active", "successorSlug": null, "summary": "AZ 10XT is a thick positive-tone DNQ photoresist for plating molds and etch masks, sold in 520/220/100 cP grades for single-coat films from 4 µm to over 20 µm — a thick-DNQ line that needs a 30–60 min post-softbake rehydration wait on films above 5 µm.", "thicknessRange": { "min_um": 4, "max_um": 20, "basis": "stated", "source": "stated — p.1 APPLICATIONS bullet: 'Single coat thicknesses from 4.0 to >20µm', verbatim. The '>20µm' upper bound is inherently open-ended; max_um is recorded as 20 (the floor of the stated inequality), not a hard ceiling. A 24 µm process is separately demonstrated (p.10) but is explicitly a double coat (2 x 12 µm), not a single-coat number, so it does not contradict this single-coat spec." }, "spinCurves": [ { "label": "AZ 10XT 520cP", "points": [ { "rpm": 1000, "um": 14 }, { "rpm": 1500, "um": 11.7 }, { "rpm": 2000, "um": 10.2 }, { "rpm": 2500, "um": 9 }, { "rpm": 3000, "um": 7.8 } ], "source": "read from figure, \"SPIN CURVES (200MM SILICON)\", p.1 of AZ 10XT Series Technical datasheet (Rev. 03/21) — one of three viscosity-grade curves on the same chart, identified by its red 520cP legend entry", "figureRead": true }, { "label": "AZ 10XT 220cP", "points": [ { "rpm": 1000, "um": 9.8 }, { "rpm": 1500, "um": 7.7 }, { "rpm": 2000, "um": 6.6 }, { "rpm": 2500, "um": 5.9 }, { "rpm": 3000, "um": 5.3 } ], "source": "read from figure, \"SPIN CURVES (200MM SILICON)\", p.1 of AZ 10XT Series Technical datasheet (Rev. 03/21) — identified by its blue 220cP legend entry; consistent with the '220cps, 6µm thick film' reference process elsewhere in this document (p.3-4, p.6-7)", "figureRead": true }, { "label": "AZ 10XT 100cP", "points": [ { "rpm": 1000, "um": 6.7 }, { "rpm": 1500, "um": 5.6 }, { "rpm": 2000, "um": 5 }, { "rpm": 2500, "um": 4.4 }, { "rpm": 3000, "um": 4 } ], "source": "read from figure, \"SPIN CURVES (200MM SILICON)\", p.1 of AZ 10XT Series Technical datasheet (Rev. 03/21) — identified by its green 100cP legend entry", "figureRead": true } ], "spinNotes": "Spin curves cover 1000-3000 rpm on 200 mm silicon for three viscosity grades (520 cP, 220 cP, 100 cP), each a single, unambiguously legended line on one chart (not a multi-SKU chart, so no grade-identification ambiguity) — values above are read from the figure, not a published numeric table, and need visual QC. Coating note (p.12): the spin-curve graphs assume coating to equilibrium; thicker coats can be produced off-curve by shortening spin time and letting the film 'self level', which this document does not quantify. No dispense volume, spin ramp, or edge-bead detail is published anywhere in this datasheet.", "adhesion": { "hmds": true, "notes": "Oxide-forming substrates (e.g. Si) should be HMDS primed prior to coating AZ 10XT (PROCESS CONSIDERATIONS > SUBSTRATE PREPARATION, p.12)." }, "rehydration": "A rehydration delay of 30-60 minutes between soft bake and exposure is required for films thicker than 5.0 µm; delay time varies with film thickness and ambient humidity. The front-page process summary lists a 30-minute rehydration hold as the typical value, and the 6 µm and 12 µm reference processes each specify a 30-minute 'Post Bake Delay'; the 24 µm double-coat reference process uses a 45-minute delay. (Source: FILM REHYDRATION, p.12, and TYPICAL PROCESS (p.1) / Reference Process tables (p.3-4, p.6-7, p.9-10) of AZ 10XT Series Technical datasheet (Rev. 03/21))", "softbake": { "temp_c": 110, "tempRange_c": { "min": 95, "max": 110 }, "time_s": 120, "method": "hotplate", "notes": "This is the reference 6 µm-film softbake, repeated identically across all four 6 µm reference processes (dense lines and holes, on Si and on Cu; p.3, p.4, p.6, p.7). The datasheet states soft bake time is 'film thickness dependent' (p.1) and that AZ 10XT soft bake temperature should generally be in the 95-110°C range (p.12, PROCESS CONSIDERATIONS > SOFT BAKE), with ramped temperatures possibly needed for very thick films to avoid solvent-outgassing bubbles. Other documented thicknesses use different bakes: 12 µm at 110°C/180 s (p.9); a 24 µm double coat at 110°C/80 s (first layer) then 115°C/180 s (second layer) (p.10).", "source": "Reference Process tables, p.3-4 and p.6-7 of AZ 10XT Series Technical datasheet (Rev. 03/21) (6 µm film on Si/Cu)" }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 380, "source": "Reference Process tables, p.3-4 of AZ 10XT Series Technical datasheet (Rev. 03/21)" } ], "doseVsThickness": [ { "wavelength_nm": 365, "binBasis": "spun-film", "conditionKey": "dense-lines-on-copper", "conditionLabel": "dense lines, 6 µm film on copper", "bins": [ { "um_min": 6, "um_max": 6, "mJ_min": 455, "mJ_max": 455 } ], "source": "REFERENCE PROCESS (DENSE LINES IN 6µM FILM THICKNESS ON CU), p.6 of AZ 10XT Series Technical datasheet (Rev. 03/21): \"i-line @ 455mJ/cm2 nominal (0.48NA)\". i-line is the 365 nm mercury line." }, { "wavelength_nm": 365, "binBasis": "spun-film", "conditionKey": "holes-on-copper", "conditionLabel": "contact holes, 6 µm film on copper", "bins": [ { "um_min": 6, "um_max": 6, "mJ_min": 445, "mJ_max": 445 } ], "source": "REFERENCE PROCESS (HOLES IN 6.0µM FILM THICKNESS ON CU), p.7 of AZ 10XT Series Technical datasheet (Rev. 03/21): \"i-line @ 445mJ/cm2 nominal (0.48NA)\". i-line is the 365 nm mercury line." } ], "basisCopy": "380 mJ/cm² i-line is the datasheet's 6 µm-on-silicon figure; the same film on copper needs more, and a 24 µm double coat took 1785 and 1875 mJ/cm² on two g-h-line tools." }, "peb": null, "floodExposure": null, "develop": { "developer": "AZ 400K", "dilution": "1:4", "time_s": 420, "method": "immersion", "rinse": null, "source": "Reference Process tables (dense lines / holes, 6 µm film, Si and Cu), p.3-4 and p.6-7 of AZ 10XT Series Technical datasheet (Rev. 03/21)" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 90, "max": 100 }, "time_s": null, "notes": "Keep the hard bake in the 90-100°C range to minimize thermal distortion of the pattern; no bake time is published. Improves adhesion in wet-etch and plating applications, and pattern stability in dry-etch processes.", "source": "PROCESS CONSIDERATIONS > HARD BAKE, p.12 of AZ 10XT Series Technical datasheet (Rev. 03/21)" }, "descum": null, "applications": [ "electroplating-molding", "etch-mask" ], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ Kwik Strip, AZ 300T, or AZ 400T (solvent-based removers), per PROCESS CONSIDERATIONS > STRIPPING, p.12 of AZ 10XT Series Technical datasheet", "storage": null, "notes": "AZ 10XT is a thick positive-tone plating resist pitched by the vendor as an upgrade over conventional thick DNQ resists in sidewall profile, aspect ratio and photospeed. Like other thick DNQ-class positive resists it needs a rehydration wait — 30-60 minutes between soft bake and exposure for any film over 5 µm — before it develops reliably; skipping it is a common source of process trouble on thick coats, and the wait grows to 45 minutes for the datasheet's 24 µm double-coat process. Post-expose bake is explicitly optional and every reference process in this datasheet runs with none, consistent with a non-chemically-amplified resist. It develops in either TMAH (AZ 300MIF/AZ 435MIF) or a buffered alkaline developer (AZ 400K, used in most of the reference processes here) — the datasheet does not name one as preferred. HMDS priming is called out explicitly for oxide-forming substrates such as silicon. Exposure dose and softbake time both scale sharply with target film thickness and substrate: at the same 6 µm film thickness the i-line nominal rises from 380 mJ/cm² on silicon to 445-455 mJ/cm² on copper, so confirm the working dose on your own tool. A first-time user should follow the specific reference-process table for their target thickness and substrate rather than a single rule of thumb.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "High-resolution projection lithography for MEMS-applications using thick photoresist AZ 10XT", "authors": "Schermer et al.", "journal": "2022 Smart Systems Integration (SSI)", "year": 2022, "doi": "10.1109/SSI56489.2022.9901437", "url": "https://doi.org/10.1109/SSI56489.2022.9901437", "accessedDate": "2026-07-15", "summary": "Thick AZ 10XT under projection (stepper) lithography for MEMS etch masks" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_10xt_photoresist.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "az-125nxt", "name": "AZ 125nXT", "manufacturer": "Merck", "productLine": "AZ 125nXT Series", "aliases": [ "AZ 125nXT Series", "AZ 125nXT-7B", "AZ 125nXT-10B" ], "tone": "negative", "chemistry": "photopolymer", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not discussed; the document's own applications list (TSV, plating, RIE etch) and every worked example are binary line/hole/post patterns, not grayscale profiles.", "status": "active", "successorSlug": null, "summary": "AZ 125nXT is a photopolymer negative-tone photoresist for ultra-thick single-coat films (roughly 18-120 µm across its two viscosity grades), built for Cu/Au/solder electroplating and RIE etch masks in advanced packaging, with no rehydration hold and no PEB required.", "thicknessRange": { "min_um": 18, "max_um": 120, "basis": "stated", "source": "stated - explicit THICKNESS GRADES table (p.2): AZ 125nXT-7B '~18-35µm', AZ 125nXT-10B '~35-120µm'. Combined min/max of the two stated grade ranges. (The front-page bullet separately gives a looser 'Single coat thicknesses from 20 to >100µm', p.1 - kept in notes rather than overriding the more specific grade table.)" }, "spinCurves": [ { "label": "AZ 125nXT-10B", "points": [ { "rpm": 600, "um": 120 }, { "rpm": 800, "um": 100 }, { "rpm": 1000, "um": 75 }, { "rpm": 1500, "um": 55 }, { "rpm": 1900, "um": 48 }, { "rpm": 2100, "um": 43 }, { "rpm": 2500, "um": 38 } ], "source": "read from figure, p.10 of AZ 125nXT Series Technical Datasheet (Merck, Rev. 01/24), 'COATING GUIDELINES' spin-speed chart. Two-grade chart; traces identified by the chart's own legend (filled triangle = AZ 125nXT-10B, filled circle = AZ 125nXT-7B), not by color alone.", "figureRead": true }, { "label": "AZ 125nXT-7B", "points": [ { "rpm": 600, "um": 57 }, { "rpm": 1000, "um": 35 }, { "rpm": 1300, "um": 24 }, { "rpm": 1500, "um": 21 }, { "rpm": 1900, "um": 18 }, { "rpm": 2300, "um": 14 } ], "source": "read from figure, p.10 of AZ 125nXT Series Technical Datasheet (Merck, Rev. 01/24), 'COATING GUIDELINES' spin-speed chart. Two-grade chart; traces identified by the chart's own legend (filled triangle = AZ 125nXT-10B, filled circle = AZ 125nXT-7B), not by color alone.", "figureRead": true } ], "spinNotes": "The datasheet explicitly cautions (p.10) that, unlike thin-resist spin curves, 'films will continue to thin with extended spin times' for a resist this viscous, and that the plotted curves 'may be used as general guidelines for coating films of 30µm thickness and above' - i.e. the document itself flags the low-thickness end of its own chart as unreliable. That caveat is directly visible in the data: my read of the AZ 125nXT-7B trace extends from ~57 µm (600 rpm) down to ~14 µm (2300 rpm), both outside the grade's own stated 18-35 µm range (p.2 THICKNESS GRADES table) - an internal inconsistency a QC reviewer should note, not something I resolved. A full example coating sequence with acceleration and function-per-step (dispense/spread/snap-spin/set-thickness/backside rinse-dry/edge-bead-flatten) is given on p.10 for building a real recipe, rather than a single spin-speed number.", "adhesion": { "hmds": true, "notes": "'Oxide forming substrates (Si, etc.) should be HMDS primed prior to coating AZ 125nXT. Contact your product representative for detailed information on pre-treating with HMDS.' (p.11, Substrate Preparation)." }, "rehydration": "None required - the datasheet states explicitly, in both the Typical Process summary ('Rehydration Hold: None', p.1) and in bold in the Process Considerations section ('NO POST BAKE REHYDRATION DELAYS ARE REQUIRED', p.11), that no rehydration hold is needed, unlike thick DNQ resists.", "softbake": { "temp_c": null, "tempRange_c": { "min": 115, "max": 140 }, "time_s": null, "timeRange_s": { "min": 300, "max": 1200 }, "method": null, "notes": "Soft-bake conditions are 115-140°C for 5-20 min, and the time scales with film thickness. The published examples span the whole window: 115°C stepping-proximity bake, up to 120 s at a 0.002 in gap, for 20 µm of the 7B grade; 130°C for 13 min on a hotplate for 50 µm of 10B; 120°C stepping-proximity, up to 400 s in contact, for 20 µm of 7B on a different tool; 135°C for 25 min for 120 µm of 10B.", "source": "p.1, p.11 (range); pp.3-6 (worked-example values)" }, "exposureDose": { "doses": [], "basisCopy": "Sensitivity spans 365 to 435 nm with no single stated dose, and the tool matters as much as the film: one 20 µm coat took 1120 mJ/cm² on a Suss MA-200 and 2000 mJ/cm² on an Ultratech AP300; a 70 µm film took 1800 mJ/cm²." }, "peb": null, "floodExposure": null, "develop": { "developer": "AZ 300MIF", "dilution": "0.26N (2.38%) TMAH, ready-to-use; puddle mode recommended", "time_s": null, "method": "puddle", "rinse": null, "source": "p.1, p.11 (developer/mode); pp.3-6 (worked-example times)" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 130, "max": 140 }, "time_s": null, "notes": "'Hard baking (post develop bake) is generally not required with AZ 125nXT. However, hard baking may improve pattern stability in aggressive dry etch processes. Hard bake temperatures should be in the 130°-140°C range.' No time or usage threshold is given.", "source": "p.11 (Hard Bake)" }, "descum": null, "applications": [ "etch-mask", "electroplating-molding", "high-aspect-ratio" ], "etchResistance": "Described only qualitatively: 'etch resistance, chemical resistance, and thermal stability far superior to typical chemically amplified photoresists' (p.1) and 'RIE etch applications' (p.1). No etch rate or selectivity number is given anywhere.", "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ 400T, 75°C, 20-25 min with agitation (p.11, Stripping); corroborated by worked electroplating examples: 'Strip: AZ 400T @ 75C' for Cu (p.7) and 'Photoresist Strip AZ 400T @ 75°C' for Au (p.8)", "storage": null, "notes": "AZ 125nXT is a photopolymer (not conventional DNQ or the vendor's own 'typical' CAR) negative resist purpose-built for ultra-thick, high-aspect-ratio plating molds and RIE masks up to and beyond 100 µm in a single coat. Two properties make it distinct from thinner thick-film resists: no rehydration hold is needed after softbake, and a PEB is explicitly not required at all - both are called out in bold in the datasheet, in direct contrast to the classic DNQ rehydration wait this recipe library flags elsewhere. Real electroplating results are documented for Cu, Ni-compatible, and Au processes with post-plate/post-strip micrographs (pp.7-8), and the stripped resist shows no reported underplating. Coating this resist is its own discipline: the vendor explicitly warns that, unlike thin-resist spin coating, films keep thinning with extended spin time, so both spin speed and spin time must be tuned together (p.10), and the datasheet's own coating-guideline curves are only endorsed for films of 30 µm and above even though they are plotted further down. HMDS priming is required on oxide-forming substrates such as Si.", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Applications of Novel High-Aspect-Ratio Ultrathick UV Photoresist for Microelectroplating", "authors": "Staab et al.", "journal": "Journal of Microelectromechanical Systems", "year": 2011, "doi": "10.1109/jmems.2011.2159098", "url": "https://doi.org/10.1109/jmems.2011.2159098", "accessedDate": "2026-07-16", "summary": "The acrylic resist AZ 125 nXT is demonstrated at 400, 800 and 1400 um film thickness with 20:1 aspect ratio for low-cost UV-LIGA, electroformed in acid copper at room temperature and near-neutral nickel at 50 C, then stripped in DMSO/acetone or plasma to release freestanding metal at 13:1 and 16:1." }, { "type": "paper", "title": "Fabrication of microfluidic chips using lithographic patterning and adhesive bonding of the thick negative photoresist AZ 125 nXT", "authors": "Knoll et al.", "journal": "Proceedings of SPIE", "year": 2015, "doi": "10.1117/12.2178812", "url": "https://doi.org/10.1117/12.2178812", "accessedDate": "2026-07-16", "summary": "AZ 125 nXT was lithographically patterned into 90 um deep microfluidic channels and sealed by adhesive bonding, presented as an SU-8 alternative that fully cross-links during UV exposure without a post-exposure bake.", "note": "Conference proceedings paper (Proc. SPIE 9517, Smart Sensors, Actuators, and MEMS VII), not a journal article." } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_125nxt_serie.pdf", "datasheetVersionOrDate": "Rev. (01/24)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "az-12xt", "name": "AZ 12XT", "manufacturer": "Merck", "productLine": "AZ 12XT-20PL Series", "aliases": [ "AZ 12XT-20PL Series", "AZ 12XT-20PL-05", "AZ 12XT-20PL-10", "AZ 12XT-20PL-15" ], "tone": "positive", "chemistry": "car", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not discussed; positioned for TSV/RDL plating and RIE etch-mask lithography with defined line/space, hole, and post patterns, not grayscale 3D profiles.", "status": "active", "successorSlug": null, "summary": "AZ 12XT is a chemically amplified positive-tone thick photoresist for single-coat films from about 3 to over 20 µm, built for fast, high-throughput TSV, RDL, and RIE etch-mask lithography with a required post-exposure bake.", "thicknessRange": { "min_um": 3, "max_um": 20, "basis": "stated", "source": "stated - 'Single coat thicknesses from 3.0 to >20µm' (p.1, Applications). The upper bound is explicitly open-ended ('>20µm') in the source text; recorded as 20 here since no higher number is stated. This closely matches the curve-span of the three spin curves below (roughly 3.0 to 22.5 µm across grades 05/10/15), which corroborates the stated range rather than conflicting with it." }, "spinCurves": [ { "label": "AZ 12XT-20PL-15", "points": [ { "rpm": 1000, "um": 22.5 }, { "rpm": 1500, "um": 17.5 }, { "rpm": 2000, "um": 14.7 }, { "rpm": 2500, "um": 13 }, { "rpm": 3000, "um": 11.7 }, { "rpm": 3500, "um": 10.7 }, { "rpm": 4000, "um": 10 } ], "source": "read from figure, p.1 of AZ 12XT-20PL Series Technical Datasheet (Merck, Rev. 03/21), 'SPIN CURVES (150MM SILICON)'. Three-grade chart; traces identified by the chart's own legend (red triangle = AZ 12XT-20PL-15, blue circle = AZ 12XT-20PL-10, green diamond = AZ 12XT-20PL-05), not by color alone.", "figureRead": true }, { "label": "AZ 12XT-20PL-10", "points": [ { "rpm": 1000, "um": 14.3 }, { "rpm": 1500, "um": 11 }, { "rpm": 2000, "um": 9.5 }, { "rpm": 2500, "um": 8.3 }, { "rpm": 3000, "um": 7.5 }, { "rpm": 3500, "um": 7 }, { "rpm": 4000, "um": 6.7 } ], "source": "read from figure, p.1 of AZ 12XT-20PL Series Technical Datasheet (Merck, Rev. 03/21), 'SPIN CURVES (150MM SILICON)'. Three-grade chart; traces identified by the chart's own legend (red triangle = AZ 12XT-20PL-15, blue circle = AZ 12XT-20PL-10, green diamond = AZ 12XT-20PL-05), not by color alone.", "figureRead": true }, { "label": "AZ 12XT-20PL-05", "points": [ { "rpm": 1000, "um": 6.2 }, { "rpm": 1500, "um": 4.8 }, { "rpm": 2000, "um": 4.2 }, { "rpm": 2500, "um": 3.8 }, { "rpm": 3000, "um": 3.5 }, { "rpm": 3500, "um": 3.2 }, { "rpm": 4000, "um": 3 } ], "source": "read from figure, p.1 of AZ 12XT-20PL Series Technical Datasheet (Merck, Rev. 03/21), 'SPIN CURVES (150MM SILICON)'. Three-grade chart; traces identified by the chart's own legend (red triangle = AZ 12XT-20PL-15, blue circle = AZ 12XT-20PL-10, green diamond = AZ 12XT-20PL-05), not by color alone.", "figureRead": true } ], "spinNotes": "The chart's own y-axis is printed as 'Film Thickness (nm)' (p.1), which is almost certainly a labeling typo in the vendor's document - the plotted values (2-24) and the product's stated 3.0->20µm single-coat range (same page) only make sense as micrometres, and the grade names (-05/-10/-15) line up with the 5/10/15 µm worked-example film thicknesses used later in the same datasheet (pp.3-5). The values are read as µm here. No numeric spin-curve table is printed anywhere else in the document.", "adhesion": { "hmds": true, "notes": "'Oxide forming substrates (Si, etc.) should be HMDS primed prior to coating AZ 12XT.' (p.9, Substrate Preparation). Every worked process example in the document starts with an explicit 'Prime: HMDS 140°C/60s (vapor)' step (pp.3-5,8)." }, "rehydration": "None - 'Rehydration Hold: None' is stated explicitly in the Typical Process summary (p.1).", "softbake": { "temp_c": 110, "tempRange_c": { "min": 95, "max": 110 }, "time_s": 120, "method": "hotplate", "notes": "Typical Process states a single value: '110ºC/120s' (p.1). Process Considerations separately gives a broader acceptable range, '95°-110°C' (p.9), with no time. Every worked example specifies 'direct contact hotplate' and scales time with thickness: 110°C/120s @5µm (p.3), 110°C/180s @10µm (pp.4,8), 110°C/240s @15µm (p.5). A footnoted caution applies to thicker coats: 'Thicker films may require a ramped soft bake process to avoid bubble formation due to rapid outgassing of solvents' (pp.4-5). A separate caution applies to thinner coats: films under 6µm may pick up airborne amine contamination if softbake-to-expose delay is excessive and should be exposed/developed within 30-45 minutes of softbake (p.3 footnote) - this is an amine-poisoning risk specific to CAR chemistry, not a rehydration/moisture issue, and is recorded here rather than in the rehydration field.", "source": "p.1 (Typical Process, used for temp_c/time_s above); p.9 (range); pp.3-5,8 (worked examples)" }, "exposureDose": { "doses": [], "basisCopy": "Exposure is i-line only, and every published dose is tied to a specific film and substrate: 100 mJ/cm² at 5 µm on silicon, 185 mJ/cm² at 15 µm, and 250 mJ/cm² for 10 µm on copper." }, "peb": { "temp_c": 90, "tempRange_c": { "min": 90, "max": 100 }, "time_s": 60, "notes": "PEB is REQUIRED, not optional, for this chemically amplified resist - explicitly emphasized twice: a starred footnote on the Typical Process page ('* PEB is required for proper imaging', p.1) and again in prose ('A PEB is required for proper imaging of AZ 12XT. PEB temperatures and times may be application specific. As a general rule, PEB temperatures should be in the 90° to 100°C range.', p.9). The Typical Process gives a single specific value, 90°C/60s (p.1), and every worked example in the document uses exactly that value regardless of film thickness (pp.3-5,8) - so the acceptable range (90-100°C) is recorded here in notes, but the recommended single value used throughout is what is stored in temp_c/time_s.", "source": "p.1 (Typical Process + footnote); p.9 (range); corroborated pp.3-5,8" }, "floodExposure": null, "develop": { "developer": "AZ 300MIF", "dilution": "0.26N (2.38%) TMAH, ready-to-use", "time_s": null, "method": "puddle", "rinse": null, "source": "p.1, p.9 (developer); pp.3-5,7,8 (worked-example times)" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 100, "max": 115 }, "time_s": null, "notes": "'Hard baking (post develop bake) improves adhesion in wet etch or plating applications and improves pattern stability in dry etch processes. Hard bake temperatures should be in the 100° to 115°C range to ensure minimal thermal distortion of the pattern.' No time or usage threshold is stated. A comparison figure (p.9) shows sidewall stability for 10µm lines (6.5µm film) at no-bake vs 105°C/110°C/115°C hard bake, without recommending a single condition.", "source": "p.9 (Hard Bake)" }, "descum": null, "applications": [ "etch-mask", "electroplating-molding", "high-aspect-ratio" ], "etchResistance": "Described only qualitatively: 'Excellent for Through Silicon Via (TSV), plating, and RIE etch applications' (p.1); hard bake (100-115°C) is said to improve 'pattern stability in dry etch processes' (p.9). No etch rate or selectivity number is given.", "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ Kwik Strip, AZ 300T, or AZ 400T (solvent-based removers, all three explicitly recommended, p.9)", "storage": null, "notes": "AZ 12XT is a chemically amplified positive-tone counterpart to the vendor's negative nXT line, aimed at the same TSV/RDL plating-mask and RIE etch-mask space but developing and exposing faster for higher tool throughput. Unlike the thick DNQ resists this recipe library also covers, no rehydration hold is needed - but the tradeoff is a PEB that is explicitly required (not optional) for the latent image to develop at all, and a real amine-sensitivity window: coats thinner than 6 µm must be exposed and developed within 30-45 minutes of softbake or airborne base contamination can degrade the pattern, a classic chemically-amplified-resist failure mode distinct from DNQ rehydration. Exposure dose and develop time both scale strongly with film thickness across the worked examples (100-250 mJ/cm2; 2x30s to 2x60s puddles), so there is no single number to quote - the full tables are printed with the exposure and development steps. HMDS priming is required on Si. Hard bake is optional and helps adhesion/etch stability rather than being required for imaging.", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface", "authors": "Bernardin et al.", "journal": "Micromachines", "year": 2018, "doi": "10.3390/mi9080412", "url": "https://doi.org/10.3390/mi9080412", "accessedDate": "2026-07-16", "summary": "AZ-12XT-20PL was coated at 15-18 um over HMDS as the deep-RIE mask used to etch through a 3 um n+ epilayer, and AZ-12XT was used again to open windows in the amorphous-SiC film for contact pads and recording sites of an intracortical neural probe." } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_12xt_photoresist.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "az-1505", "name": "AZ 1505", "manufacturer": "Merck (AZ Electronic Materials)", "productLine": "AZ 1500 series", "aliases": [ "AZ1505", "AZ 1505 Photoresist" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not address grayscale or 3D lithography anywhere; AZ 1500 is marketed only for standard binary patterning (wet-etch masking, general purpose).", "status": "active", "successorSlug": null, "summary": "AZ 1505 is the thinnest grade in Merck's AZ 1500 series of general-purpose positive-tone photoresists, spin-coating to roughly 0.65-1.6 µm and intended for wet-etch masking applications requiring strong substrate adhesion.", "thicknessRange": { "min_um": 0.6, "max_um": 1.6, "basis": "curve-span", "source": "curve-span: taken from the min/max of the AZ 1505 curve on the p.1 spin-speed chart (500-4000 rpm tested); the datasheet's stated '0.5 to 6µm' figure (p.1, APPLICATION bullets) is a whole-series span across all four grades (1505/1512/1518/1529), not a per-grade figure for AZ 1505 alone, so it is not used here." }, "spinCurves": [ { "label": "AZ 1505 as supplied", "points": [ { "rpm": 500, "um": 1.6 }, { "rpm": 1000, "um": 1.1 }, { "rpm": 1500, "um": 0.95 }, { "rpm": 2000, "um": 0.85 }, { "rpm": 2500, "um": 0.8 }, { "rpm": 3000, "um": 0.65 }, { "rpm": 3500, "um": 0.6 }, { "rpm": 4000, "um": 0.6 } ], "source": "read from figure, \"SPIN CURVES (150mm Wafers)\" chart, p.1 of AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21); AZ 1505 identified by its blue diamond legend marker, distinct from AZ 1512 (magenta square), AZ 1518 (red triangle) and AZ 1529 (green circle) plotted on the same axes. The chart is the only source for these points — no numeric table accompanies it — so treat them as a figure read.", "figureRead": true } ], "spinNotes": "Datasheet does not state spin ramp/acceleration, dispense volume, or static vs dynamic dispense for the spin-curve chart. Spin coating is named as one of several compatible coating methods (spray and roller coating are also mentioned, p.6 COATING) but no method-specific parameters are published beyond that. No edge-bead-removal recipe is given, only that AZ EBR Solvent or AZ EBR 70/30 are the companion EBR products (p.2).", "adhesion": { "hmds": true, "notes": "\"Oxide forming substrates (Si, etc.) should be primed with HMDS (hexamethyl disilazane) or other suitable primer prior to coating AZ 1500. Contact your AZ products representative for detailed information on pre-treating with HMDS.\" Source: SUBSTRATE PREPARATION, p.6." }, "rehydration": null, "softbake": { "temp_c": null, "tempRange_c": { "min": 90, "max": 110 }, "time_s": null, "method": null, "notes": "Datasheet states soft bake temperature should be in the 90-110°C range (higher end improves adhesion to metals); bakes may be performed on hotplate or in a vented oven, but no single temperature, no time, and no specific method is given for AZ 1505.", "source": "TYPICAL PROCESS, p.1; PROCESS CONSIDERATIONS / SOFT BAKE, p.6" }, "exposureDose": { "doses": [], "basisCopy": "Every exposure number printed in this sheet is captioned for AZ 1512 or AZ 1518; none of it is AZ 1505 data, and a figure taken on a thicker grade does not transfer." }, "peb": { "temp_c": null, "tempRange_c": { "min": 105, "max": 115 }, "time_s": null, "notes": "PEB is described as optional, used to maximize process latitude and mitigate standing-wave effects from monochromatic exposure. When used, temperature should be in the 105-115°C range; this is stated as a range, not a single value, and no time is given.", "source": "TYPICAL PROCESS, p.1; POST EXPOSURE BAKE, p.6" }, "floodExposure": null, "develop": { "developer": "AZ 300MIF, AZ 726MIF, AZ 917MIF, or AZ 400K", "dilution": "AZ 400K used 1:4 for tank immersion; dilution of the MIF developers is not stated in this datasheet.", "time_s": 60, "method": null, "rinse": null, "source": "TYPICAL PROCESS, p.1; DEVELOPING, p.6" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 100, "max": 110 }, "time_s": null, "notes": "Hard bake temperature should be in the 100-110°C range to minimize thermal pattern distortion; improves adhesion in wet-etch or plating applications and pattern stability in dry etch processes. No time is given, and temperature is stated as a range, not a single value.", "source": "HARD BAKE, p.6" }, "descum": null, "applications": [ "etch-mask", "electroplating-molding", "general-prototyping" ], "etchResistance": "Marketed for \"demanding wet etch applications\" with \"excellent substrate adhesion\"; no quantitative etch rate or resistance data is published in this datasheet. Source: APPLICATION, p.1.", "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ 300T, AZ 400T, or AZ Kwik Strip — removers designed for DNQ/novolac type photoresists. Strip times vary with thermal history; patterns processed above 140°C may cross-link and become harder to strip, and charred resist will not dissolve in solvent-based removers. Source: STRIPPING, p.7.", "storage": null, "notes": "AZ 1505 is the thinnest member of Merck's AZ 1500 series, a general-purpose positive DNQ/novolak-type resist family sold for demanding wet-etch masking where strong substrate adhesion matters (the datasheet's stripper guidance — removers \"designed for DNQ/novolac type photoresists\" — is the basis for this chemistry classification, since the document never states the chemistry as a standalone claim). Soft-bake, optional-PEB, and hard-bake temperatures are all given only as ranges (90-110°C, 105-115°C, 100-110°C respectively) rather than single set points, so a specific process must be optimized on-tool rather than read off this sheet verbatim. No exposure dose, PEB time, or storage/shelf-life data is published for AZ 1505 specifically — the only doses and resolution/depth-of-focus data in this datasheet were captured for the AZ 1512 and AZ 1518 grades, not AZ 1505. Develop is 60 s by puddle or immersion in a metal-ion-free (TMAH, e.g. AZ 300/726/917MIF) or inorganic (e.g. AZ 400K 1:4) developer, both explicitly supported. HMDS (or another suitable primer) is recommended ahead of coating on oxide-forming substrates such as silicon.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Three-dimensional platinum nanoparticle-based bridges for ammonia gas sensing", "authors": "Isaac et al.", "journal": "Scientific Reports", "year": 2021, "doi": "10.1038/s41598-021-91975-w", "url": "https://doi.org/10.1038/s41598-021-91975-w", "accessedDate": "2026-07-16", "summary": "AZ1505 was spin-coated and patterned with circular openings down to the underlying metal tracks, defining the contact geometry for a platinum-nanoparticle ammonia gas sensor." }, { "type": "paper", "title": "Clean-Room Lithographical Processes for the Fabrication of Graphene Biosensors", "authors": "Cabral et al.", "journal": "Materials", "year": 2020, "doi": "10.3390/ma13245728", "url": "https://doi.org/10.3390/ma13245728", "accessedDate": "2026-07-16", "summary": "AZ1505 was run at 600 nm and 1035 nm as a plasma-etch mask for graphene patterning and for passivation-stack RIE, with the authors reporting how the resist itself erodes under ECR and ICP plasma exposure." }, { "type": "paper", "title": "Encoded diffractive optics for full-spectrum computational imaging", "authors": "Heide et al.", "journal": "Scientific Reports", "year": 2016, "doi": "10.1038/srep33543", "url": "https://doi.org/10.1038/srep33543", "accessedDate": "2026-07-16", "summary": "A 0.6 um AZ1505 layer spin-coated on chrome formed the lithography step used to build encoded diffractive optical elements for computational imaging." } ], "troubleshooting": [ { "q": "What exposure dose should I use for AZ 1505?", "a": "This datasheet publishes no exposure dose for AZ 1505. The doses it does print — 80–100 mJ/cm² and 130–150 mJ/cm² — come from resolution and depth-of-focus figures captioned for AZ 1512 and AZ 1518 respectively, not AZ 1505, and must not be borrowed. The series is sensitive across 310–450 nm with 365–436 nm recommended; characterize a working dose on-tool.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — EXPOSURE, p.6; grade-captioned test figures, p.3–5" }, { "q": "How thick a film does AZ 1505 coat?", "a": "AZ 1505 is the thinnest grade in the AZ 1500 series. On the p.1 spin-speed chart (150 mm wafers) it coats about 1.6 µm at 500 rpm, falling to roughly 0.6 µm by 3,500–4,000 rpm. The datasheet's stated 0.5–6 µm figure is a whole-series span across all four grades, not AZ 1505 alone.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — SPIN CURVES (150 mm Wafers), p.1" }, { "q": "What soft bake does AZ 1505 need?", "a": "The datasheet gives only a series-wide range: soft-bake temperature should be 90–110°C, with the higher end improving adhesion to metals; the bake may be done on a hotplate or in a vented oven. No single temperature, time or method is stated for AZ 1505, so optimize the bake on-tool.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — TYPICAL PROCESS, p.1; SOFT BAKE, p.6" }, { "q": "Which developer and develop time should I use for AZ 1505?", "a": "Develop for 60 s by puddle or immersion. The datasheet offers metal-ion-free developers (AZ 300MIF, AZ 726MIF, AZ 917MIF) or AZ 400K used 1:4 for tank immersion. Both puddle and immersion are explicitly supported, so no single method is designated — pick to match your developer.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — TYPICAL PROCESS, p.1; DEVELOPING, p.6" }, { "q": "Does AZ 1505 need a post-exposure bake?", "a": "A PEB is optional. It is used to maximize process latitude and mitigate standing-wave effects from monochromatic exposure; when used, the temperature should be in the 105–115°C range. No time is published and no single value is given, so develop the PEB on-tool if your process needs it.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — TYPICAL PROCESS, p.1; POST EXPOSURE BAKE, p.6" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_1500_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-1512", "name": "AZ 1512", "min_um": 1.45, "max_um": 3.9, "doseBasis": null }, { "slug": "az-1518", "name": "AZ 1518", "min_um": 1.9, "max_um": 5.6, "doseBasis": "150 mJ/cm² @ 436 nm" } ], "humanVerified": false }, { "slug": "az-1512", "name": "AZ 1512", "manufacturer": "Merck", "productLine": "AZ 1500 series", "aliases": [ "AZ1512", "AZ 1512HS", "AZ1512HS" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed anywhere in the datasheet; the series is positioned as a general-purpose wet-etch/plating resist, not for grayscale/3D lithography.", "status": "active", "successorSlug": null, "summary": "AZ 1512 is the mid-thickness grade of Merck's AZ 1500 series of general-purpose positive photoresists, coating roughly 1.45–3.9 µm — a fast-throughput resist for wet-etch and plating, compatible with both TMAH (metal-ion-free) and inorganic developers.", "thicknessRange": { "min_um": 1.45, "max_um": 3.9, "basis": "curve-span", "source": "curve-span: min/max of the AZ 1512 trace on the p.1 'SPIN CURVES (150mm Wafers)' chart (500-4000 rpm plotted span; 4000 rpm→1.45 µm, 500 rpm→3.9 µm). The datasheet's '0.5 to 6µm' APPLICATION line is a whole-series span across all four grades, not per-grade, so it is not used here." }, "spinCurves": [ { "label": "AZ 1512", "points": [ { "rpm": 500, "um": 3.9 }, { "rpm": 1000, "um": 2.7 }, { "rpm": 1500, "um": 2.3 }, { "rpm": 2000, "um": 2 }, { "rpm": 2500, "um": 1.8 }, { "rpm": 3000, "um": 1.65 }, { "rpm": 3500, "um": 1.55 }, { "rpm": 4000, "um": 1.45 } ], "source": "read from figure, \"SPIN CURVES (150mm Wafers)\", p.1 of AZ 1500 Series datasheet (Merck, Rev. (03/21)); trace identified as the magenta/pink square-marker series per the chart's own legend (AZ 1505 blue diamond / AZ 1512 magenta square / AZ 1518 red triangle / AZ 1529 green circle), read at each of the 8 plotted marker positions from 500-4000 rpm (the full plotted span; the chart's x-axis extends to 5000 rpm but no series has a point past 4000). The AZ 1512-specific resolution/DOF/exposure-latitude test figures (p.3-5) all cite FT=1.30µm, modestly below this reading's highest-rpm point (~1.45µm at 4000 rpm) — consistent with that test film having been coated slightly above this chart's plotted ceiling.", "figureRead": true } ], "spinNotes": "Multi-grade chart (\"SPIN CURVES (150mm Wafers)\", p.1) plots AZ 1505 / AZ 1512 / AZ 1518 / AZ 1529 together with distinct markers (diamond/square/triangle/circle). The AZ 1512 trace (magenta/pink square) is plotted here from its 8 marker positions on that chart, 500-4000 rpm. The AZ 1505 and AZ 1512 traces run visually close together on the compressed 0-12µm y-axis at rpm ≥ 2000 despite differing by roughly 2x in absolute thickness there — an overlap that is easy to misread, so the two are separated by marker shape and colour against the legend rather than by proximity. No spin accel/dispense parameters are published. AZ EBR Solvent / AZ EBR 70/30 are listed as companion products for thinning/edge-bead removal (COMPANION PRODUCTS, p.2) but no edge-bead procedure or parameters are given. No rehydration hold is mentioned (not applicable to this thin-film series).", "adhesion": { "hmds": true, "notes": "\"Oxide forming substrates (Si, etc.) should be primed with HMDS (hexamethyl disilazane) or other suitable primer prior to coating AZ 1500. Contact your AZ products representative for detailed information on pre-treating with HMDS.\" (SUBSTRATE PREPARATION, p.6). No specific HMDS bake temp/time is published." }, "rehydration": null, "softbake": { "temp_c": null, "tempRange_c": { "min": 90, "max": 110 }, "time_s": null, "method": "hotplate", "notes": "Series-wide range only: \"Soft bake temperatures for AZ 1500 should be in the 90-110°C range. Temperatures towards the high end of this range will improve adhesion to metals.\" No time is published; \"optimum soft bake times and temperatures may be application specific.\" Bakes may be performed on hotplates or in vented ovens — method left as hotplate (the more common of the two, and what all downstream resolution/DOF/latitude test figures use: \"Soft Bake: 100°C/90s (hotplate)\"), but that 100°C/90s figure is a test condition for the resolution figures, not the datasheet's stated typical-process recommendation, so it is not promoted to the scalar fields here.", "source": "SOFT BAKE, p.6 of AZ 1500 Series datasheet; test-condition caption on p.3–4." }, "exposureDose": { "doses": [], "basisCopy": "There is no nominal dose for AZ 1512 — the datasheet only shows g-line test exposures, where a 1.3 µm film resolved at 80, 90 and 100 mJ/cm², with the exposure-latitude sweep running 70 to 140 mJ/cm²." }, "peb": { "temp_c": null, "tempRange_c": { "min": 105, "max": 115 }, "time_s": null, "notes": "Optional step: \"A PEB may be employed to maximize process latitudes and mitigate standing wave effects caused by monochromatic exposure. PEB temperatures and times may be application specific. As a general rule, PEB temperatures should be in the 105°C to 115°C range.\" No time is published.", "source": "POST EXPOSURE BAKE, p.6 of AZ 1500 Series datasheet." }, "floodExposure": null, "develop": { "developer": "AZ 400K or AZ 300MIF (tank immersion); AZ 917MIF (puddle)", "dilution": "AZ 400K 1:4; AZ 300MIF and AZ 917MIF used as supplied (both metal-ion-free/ready-to-use)", "time_s": 60, "method": null, "rinse": null, "source": "TYPICAL PROCESS, p.1 (\"Develop: 60s Puddle or immersion Developer type: MIF or IN\"); DEVELOPING, p.6; developer list, COMPANION PRODUCTS, p.2." }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 100, "max": 110 }, "time_s": null, "notes": "\"Hard bake temperatures should be in the 100°C to 110°C range to ensure minimal thermal distortion of the pattern.\" No time is published. Improves adhesion in wet-etch/plating applications and pattern stability in dry-etch processes.", "source": "HARD BAKE, p.6 of AZ 1500 Series datasheet." }, "descum": null, "applications": [ "etch-mask", "electroplating-molding" ], "etchResistance": "Datasheet claims \"excellent substrate adhesion for demanding wet etch applications\" (APPLICATION, p.1) but publishes no etch-rate or selectivity data.", "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ 300T, AZ 400T, or AZ Kwik Strip™ (STRIPPING, p.7): \"Under normal process conditions, AZ 1500 strips readily in removers designed for DNQ/novolac type photoresists.\" Patterns baked above 140°C may cross-link and become harder to strip.", "storage": null, "notes": "AZ 1512 is the ~1.3 µm-thick grade in Merck's AZ 1500 series of general-purpose positive DNQ/novolac photoresists, sharing a single four-grade product line (1505/1512/1518/1529) with a common process window. The series is compatible with both TMAH (metal-ion-free) and inorganic developers, and a puddle or immersion develop is quoted at a flat 60 s regardless of method. Resolution, depth-of-focus and exposure-latitude figures are all reported under g-line (436 nm) exposure rather than i-line, and only as multi-point sweeps (e.g. a 70–140 mJ/cm² latitude scan) rather than a single nominal dose — so no dose is published here. Soft bake, PEB and hard bake are each specified only as series-wide temperature ranges (90–110 °C, 105–115 °C, 100–110 °C) with no grade-specific values or times.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Ice rule fragility via topological charge transfer in artificial colloidal ice", "authors": "Libal et al.", "journal": "Nature Communications", "year": 2018, "doi": "10.1038/s41467-018-06631-1", "url": "https://doi.org/10.1038/s41467-018-06631-1", "accessedDate": "2026-07-16", "summary": "A 2.8 um AZ-1512HS layer on a glass coverslip was patterned into double-well topographic traps for colloidal-ice experiments.", "note": "The Heidelberg DWL 66 direct-write laser wrote the chrome mask; the AZ 1512 itself was then exposed through that mask, not written directly." }, { "type": "paper", "title": "Enhanced Mobility in Suspended Chemical Vapor-Deposited Graphene Field-Effect Devices in Ambient Conditions", "authors": "Thodkar & Gramm", "journal": "ACS Applied Materials & Interfaces", "year": 2023, "doi": "10.1021/acsami.3c04012", "url": "https://doi.org/10.1021/acsami.3c04012", "accessedDate": "2026-07-16", "summary": "AZ1512 spun at 4000 rpm for 40 s served as the etch mask in two sequential lithography steps: defining the two-terminal graphene device and then suspending the graphene." } ], "troubleshooting": [ { "q": "What exposure dose should I use for AZ 1512?", "a": "The datasheet gives no single nominal dose — only g-line (436 nm) sweep points from test figures: resolution at 80/90/100 mJ/cm² (1.3 µm film), depth-of-focus at 90/100 mJ/cm², and exposure latitude swept 70–140 mJ/cm². Pick a working dose within that window on-tool. The series is sensitive 310–450 nm with 365–436 nm recommended.", "source": "AZ 1500 Series datasheet (Merck, Rev. 03/21) — resolution/DOF/exposure-latitude figures, p.3–5; EXPOSURE, p.6" }, { "q": "How thick a film does AZ 1512 coat?", "a": "AZ 1512 is the mid-thickness grade of the AZ 1500 series. On the p.1 spin-speed chart (150 mm wafers) its trace runs from about 3.9 µm at 500 rpm down to 1.45 µm at 4,000 rpm; the resolution figures use a 1.3 µm reference film. The AZ 1505 and AZ 1512 traces sit close together above 2,000 rpm, so read them by legend marker, not proximity.", "source": "AZ 1500 Series datasheet (Merck, Rev. 03/21) — SPIN CURVES (150 mm Wafers), p.1" }, { "q": "What soft bake does AZ 1512 need?", "a": "The datasheet states only a series-wide range: soft-bake temperature should be 90–110°C, the high end improving adhesion to metals, with no time given. The AZ 1512 resolution, depth-of-focus and latitude figures were run at 100°C/90 s on a hotplate — a documented test condition, not the sheet's stated typical-process value, so treat it as a starting point.", "source": "AZ 1500 Series datasheet (Merck, Rev. 03/21) — SOFT BAKE, p.6; test-condition captions, p.3–4" }, { "q": "Which developer and develop time should I use for AZ 1512?", "a": "Develop for 60 s by puddle or immersion. For tank immersion the datasheet offers AZ 400K at 1:4 or AZ 300MIF; for puddle it lists AZ 917MIF. The metal-ion-free developers are used as supplied. No single developer/method pair is designated as primary, so pick to match your track.", "source": "AZ 1500 Series datasheet (Merck, Rev. 03/21) — TYPICAL PROCESS, p.1; DEVELOPING, p.6; COMPANION PRODUCTS, p.2" }, { "q": "Does AZ 1512 need a post-exposure bake?", "a": "A PEB is optional. It maximizes process latitude and mitigates standing-wave effects from monochromatic exposure; when used, the temperature should be in the 105–115°C range. Both temperature and time are described as application-specific, and no time is published, so develop the PEB on-tool.", "source": "AZ 1500 Series datasheet (Merck, Rev. 03/21) — POST EXPOSURE BAKE, p.6" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_1500_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-1505", "name": "AZ 1505", "min_um": 0.6, "max_um": 1.6, "doseBasis": null }, { "slug": "az-1518", "name": "AZ 1518", "min_um": 1.9, "max_um": 5.6, "doseBasis": "150 mJ/cm² @ 436 nm" } ], "humanVerified": true }, { "slug": "az-1518", "name": "AZ 1518", "manufacturer": "Merck (AZ Electronic Materials)", "productLine": "AZ 1500 series", "aliases": [ "AZ1518", "AZ 1518 Photoresist" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not address grayscale or 3D lithography anywhere; AZ 1500 is marketed only for standard binary patterning (wet-etch masking, general purpose).", "status": "active", "successorSlug": null, "summary": "AZ 1518 is a mid/thick grade in Merck's AZ 1500 series of general-purpose positive-tone photoresists, spin-coating to roughly 1.9-5.6 µm; this datasheet documents it specifically at a 2.4 µm reference film thickness with resolution and depth-of-focus data.", "thicknessRange": { "min_um": 1.9, "max_um": 5.6, "basis": "curve-span", "source": "curve-span: taken from the min/max of the AZ 1518 curve on the p.1 spin-speed chart (500-4000 rpm tested); the datasheet's stated '0.5 to 6µm' figure (p.1, APPLICATION bullets) is a whole-series span across all four grades (1505/1512/1518/1529), not a per-grade figure for AZ 1518 alone, so it was not used here." }, "spinCurves": [ { "label": "AZ 1518 as supplied", "points": [ { "rpm": 500, "um": 5.6 }, { "rpm": 1000, "um": 3.9 }, { "rpm": 1500, "um": 3.3 }, { "rpm": 2000, "um": 2.9 }, { "rpm": 2500, "um": 2.6 }, { "rpm": 3000, "um": 2.3 }, { "rpm": 3500, "um": 2.1 }, { "rpm": 4000, "um": 1.9 } ], "source": "read from figure, \"SPIN CURVES (150mm Wafers)\" chart, p.1 of AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21); AZ 1518 identified by its red triangle legend marker, distinct from AZ 1505 (blue diamond), AZ 1512 (magenta square) and AZ 1529 (green circle) plotted on the same axes. Cross-checked for plausibility against the reference thickness (2.40 µm film) named in the p.2-4 resolution/DOF figures, which sits between the 1000 and 1500 rpm figure-read points, consistent with a typical process spin speed in that band.", "figureRead": true } ], "spinNotes": "Datasheet does not state spin ramp/acceleration, dispense volume, or static vs dynamic dispense for the spin-curve chart. Spin coating is named as one of several compatible coating methods (spray and roller coating are also mentioned, p.6 COATING) but no method-specific parameters are published beyond that. No edge-bead-removal recipe is given, only that AZ EBR Solvent or AZ EBR 70/30 are the companion EBR products (p.2).", "adhesion": { "hmds": true, "notes": "\"Oxide forming substrates (Si, etc.) should be primed with HMDS (hexamethyl disilazane) or other suitable primer prior to coating AZ 1500. Contact your AZ products representative for detailed information on pre-treating with HMDS.\" Source: SUBSTRATE PREPARATION, p.6." }, "rehydration": null, "softbake": { "temp_c": 100, "tempRange_c": { "min": 90, "max": 110 }, "time_s": 90, "method": "hotplate", "notes": "100°C/90s hotplate soft bake is the condition used for the AZ 1518 resolution ladder (p.3, FT=2.4 µm on Si) and the AZ 1518 depth-of-focus series (p.4, FT=2.40 µm on Si). The series-wide TYPICAL PROCESS section (p.1) only states a 90-110°C range without a single value or time, so this is a specific documented test condition for AZ 1518 rather than the generic series spec.", "source": "RESOLUTION OF AZ 1518 at FT=2.4µm on Si, p.3; DEPTH OF FOCUS FOR 2.0µM LINES AZ 1518 AT FT=2.40µM ON SI, p.4" }, "exposureDose": { "doses": [ { "wavelength_nm": 436, "value_mJcm2": 150, "source": "p.2 SEM image caption; p.3 RESOLUTION OF AZ 1518 at FT=2.4µm; p.4 DEPTH OF FOCUS FOR 2.0µM LINES AZ 1518" } ], "basisCopy": "150 mJ/cm² g-line prints 1.0 µm lines in a 2.4 µm film, with the datasheet's resolution and focus series bracketing it from 130 to 150 mJ/cm²; nothing is published for i-line or h-line." }, "peb": { "temp_c": null, "tempRange_c": { "min": 105, "max": 115 }, "time_s": null, "notes": "PEB is described as optional (series-wide statement), used to maximize process latitude and mitigate standing-wave effects from monochromatic exposure. When used, temperature should be in the 105-115°C range; this is stated as a range, not a single value, and no time is given. No AZ 1518-specific PEB condition is documented anywhere in this datasheet.", "source": "TYPICAL PROCESS, p.1; POST EXPOSURE BAKE, p.6" }, "floodExposure": null, "develop": { "developer": "AZ 300MIF", "dilution": null, "time_s": 60, "method": "puddle", "rinse": null, "source": "p.2 SEM caption (\"AZ 300 MIF Develop (60s)\"); p.4 DEPTH OF FOCUS caption (\"Develop: AZ 300MIF (60s) puddle\"); p.3 resolution caption (\"Develop: AZ 300MIF (60s)\")" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 100, "max": 110 }, "time_s": null, "notes": "Hard bake temperature should be in the 100-110°C range to minimize thermal pattern distortion; improves adhesion in wet-etch or plating applications and pattern stability in dry etch processes. No time is given, and temperature is stated as a range, not a single value. No AZ 1518-specific hard-bake condition is documented.", "source": "HARD BAKE, p.6" }, "descum": null, "applications": [ "etch-mask", "electroplating-molding", "general-prototyping" ], "etchResistance": "Marketed for \"demanding wet etch applications\" with \"excellent substrate adhesion\"; no quantitative etch rate or resistance data is published in this datasheet. Source: APPLICATION, p.1.", "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ 300T, AZ 400T, or AZ Kwik Strip — removers designed for DNQ/novolac type photoresists. Strip times vary with thermal history; patterns processed above 140°C may cross-link and become harder to strip, and charred resist will not dissolve in solvent-based removers. Source: STRIPPING, p.7.", "storage": null, "notes": "AZ 1518 is a mid-to-thick grade in Merck's AZ 1500 series, a general-purpose positive DNQ/novolak-type resist sold for wet-etch masking needing strong adhesion (the datasheet's stripper guidance — removers \"designed for DNQ/novolac type photoresists\" — is the basis for this chemistry classification, since the document never states the chemistry as a standalone claim). Unlike AZ 1505, this datasheet documents AZ 1518 with dedicated resolution and depth-of-focus figures at a 2.4 µm reference film thickness: 100°C/90s hotplate soft bake, g-line exposure on a Nikon 1755G7A (0.54 NA) stepper, and a 60 s AZ 300MIF puddle develop, resolving down to roughly 1.0-1.2 µm lines and holding pattern fidelity across a documented ±0.8-1.2 µm focus window. PEB and hard-bake conditions, by contrast, are given only as series-wide ranges (105-115°C optional PEB; 100-110°C hard bake), not single values specific to AZ 1518. On the p.1 multi-grade spin-speed chart (AZ 1505/1512/1518/1529 plotted together), the AZ 1518 curve was identified by its red triangle legend marker; the reported points are a figure read, not a printed table, and warrant a visual QC pass against the source chart.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Microchip electrophoresis at elevated temperatures and high separation field strengths", "authors": "Mitra et al.", "journal": "ELECTROPHORESIS", "year": 2013, "doi": "10.1002/elps.201300427", "url": "https://doi.org/10.1002/elps.201300427", "accessedDate": "2026-07-16", "summary": "B270 glass coated with 120 nm of chrome and 530 nm of AZ1518 was UV-exposed and developed to transfer the channel pattern before wet etching, producing microchip electrophoresis devices." }, { "type": "paper", "title": "Patterning of Lead Halide Perovskite Device Stacks on CMOS Readout Using Selective Microfabrication Protocols", "authors": "Tsarev et al.", "journal": "Advanced Materials", "year": 2026, "doi": "10.1002/adma.202523002", "url": "https://doi.org/10.1002/adma.202523002", "accessedDate": "2026-07-16", "summary": "An AZ1518 photoresist mask defined the ITO patterning step in a perovskite-on-CMOS device stack; the same study used the thinner AZ1505 where about 1 um minimum features were required." } ], "troubleshooting": [ { "q": "What exposure dose should I use for AZ 1518?", "a": "The datasheet's headline captioned dose is 150 mJ/cm² on g-line (436 nm) — for 1.0 µm lines in a 2.4 µm film. It also sweeps nearby doses: 130/140/150 mJ/cm² in the resolution figure and 140/150 mJ/cm² in the depth-of-focus figure. This dose is g-line-specific — no i-line (365 nm) or h-line (405 nm) value is published.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — p.2 SEM caption; RESOLUTION p.3; DEPTH OF FOCUS p.4" }, { "q": "What soft bake does AZ 1518 need?", "a": "For AZ 1518 the datasheet documents a specific condition: 100°C for 90 s on a hotplate, used for the resolution ladder and depth-of-focus series at a 2.4 µm reference film on silicon. This is grade-specific here, unlike the series' generic 90–110°C range with no stated time.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — RESOLUTION at FT=2.4 µm, p.3; DEPTH OF FOCUS, p.4" }, { "q": "Which developer and develop time should I use for AZ 1518?", "a": "AZ 300MIF is the developer named in every AZ 1518 test caption, run for 60 s by puddle. The dilution is not stated. The series-wide process note also allows a 60 s puddle or immersion develop with an MIF or inorganic developer, but AZ 300MIF is the grade-specific choice documented here.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — p.2 and p.4 develop captions; TYPICAL PROCESS, p.1" }, { "q": "How thick a film does AZ 1518 coat?", "a": "AZ 1518 is the mid-to-thick grade of the AZ 1500 series. On the p.1 spin-speed chart (150 mm wafers) its trace runs from about 5.6 µm at 500 rpm down to 1.9 µm at 4,000 rpm; the datasheet's own characterization film is 2.4 µm, which sits between the 1,000 and 1,500 rpm points.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — SPIN CURVES (150 mm Wafers), p.1" }, { "q": "What resolution does AZ 1518 reach?", "a": "In this datasheet AZ 1518 resolves down to roughly 1.0–1.2 µm lines at a 2.4 µm film thickness, under g-line (436 nm) exposure on a Nikon 1755G7A (0.54 NA) stepper with a 100°C/90 s soft bake and a 60 s AZ 300MIF puddle develop, holding pattern fidelity across a documented focus window.", "source": "AZ 1500 Series Technical Datasheet (Merck, Rev. 03/21) — RESOLUTION and DEPTH OF FOCUS figures, p.3–4" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_1500_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-1505", "name": "AZ 1505", "min_um": 0.6, "max_um": 1.6, "doseBasis": null }, { "slug": "az-1512", "name": "AZ 1512", "min_um": 1.45, "max_um": 3.9, "doseBasis": null } ], "humanVerified": false }, { "slug": "az-15nxt", "name": "AZ 15nXT (450 CPS)", "manufacturer": "AZ Electronic Materials", "productLine": null, "aliases": [ "AZ15nXT", "AZ 15nXT (450cps)", "AZ EXP 15nXT" ], "tone": "negative", "chemistry": "car", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not discussed anywhere in the document; the material is positioned for binary Cu RDL / TSV plating and etch masks (via fill, line/space patterns), not grayscale 3D profiles.", "status": "active", "successorSlug": null, "summary": "AZ 15nXT (450 CPS) is a chemically amplified negative-tone thick photoresist for Cu redistribution-layer and through-silicon-via plating, exposed with i-line steppers and developed in standard TMAH developer.", "thicknessRange": { "min_um": 6.4, "max_um": 14.6, "basis": "curve-span", "source": "curve-span - min/max of the 6 marked data points (1000-4000 rpm) on the document's own 'AZ 15nXT (450 CPS) Spin Speed Curve' figure, p.7. Not extrapolated to the unmarked ends of the drawn line (500 rpm/~22 µm, 4500 rpm/~5.8 µm). The spin-coating notes record a real internal inconsistency with two other thickness figures in the same document." }, "spinCurves": [ { "label": "AZ 15nXT (450 CPS)", "points": [ { "rpm": 1000, "um": 14.6 }, { "rpm": 1500, "um": 11.3 }, { "rpm": 2000, "um": 9.4 }, { "rpm": 2500, "um": 8.3 }, { "rpm": 3000, "um": 7.4 }, { "rpm": 4000, "um": 6.4 } ], "source": "read from figure, p.7 of AZ 15nXT (450 CPS) Photoresist - Lithographic and Plating Performance Comparison (AZ Electronic Materials, Jan 2009), titled 'AZ 15nXT (450 CPS) Spin Speed Curve'. Single-grade chart (one trace, no legend ambiguity); values estimated at the six marked data points and cross-checked against the same trace redrawn with square markers on the comparison chart p.8 ('AZ 15nXT (115 CPS) and AZ 15nXT (450 CPS) Spin Speed Curves'), which shows consistent point positions.", "figureRead": true } ], "spinNotes": "Coating: hand dispense on 150 mm silicon, Opti-Trak Coat and Bake, spin 1000-4000 rpm for 30 sec, softbake 110°C/3 min integrated with the coat track (p.7-8). EDGE BEAD is severe and explicitly studied (p.15, 200 mm wafer): at 1000 rpm the film rises from a ~17.8 µm field thickness to ~25 µm at 1 mm from the wafer edge; even at 3000 rpm the edge rises from ~7.8 µm field to ~9.6 µm at 1 mm from the edge. Field thickness stabilizes by roughly 5-6 mm in from the edge at every speed tested. REHYDRATION is not mentioned anywhere in this document (unlike AZ 125nXT and AZ 12XT, which both explicitly state 'Rehydration Hold: None'), so nothing is claimed either way for this grade; 'not required' cannot be inferred just because this is a chemically amplified resist. The document disagrees with itself on thickness: the 'Spin Speed Curve' (p.7, plotted above) reads ~14.6 µm at 1000 rpm and ~6.4 µm at 4000 rpm, but two other figures in the same deck disagree - the coating-uniformity wafer-map means (p.14) report 17.8 µm at 1000 rpm / 7.8 µm at 3000 rpm, and the edge-bead study's own field-thickness values (p.15) match those higher numbers, not the p.7 curve. That is roughly a 20% gap at 1000 rpm between two nominally equivalent 'hand dispense, Opti-Trak coat and bake, 150 mm Si' runs in the same document. The curve plotted here is the one the document captions as its spin-speed curve; real coats in this deck ran measurably thicker in two other places.", "adhesion": { "hmds": null, "notes": "Not discussed. Process examples in the document run directly on Si (photospeed testing) and Cu (imaging) wafers with no HMDS priming step mentioned." }, "rehydration": null, "softbake": { "temp_c": 110, "time_s": 180, "method": null, "notes": "Stated as a single value (not a range) in Process Conditions: '110°C / 180 seconds' (=110°C/3 min), and repeated identically in every other process example in the deck (pp.7,8,16-19). Processed on an 'Opti-Trak Coat and Bake' track; the document never states whether this is a hotplate or an oven step.", "source": "p.5 (Process Conditions); corroborated pp.7,8,11,16-19" }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 400, "source": "p.5; corroborated as the boxed/highlighted reference dose in Exposure Latitude figures pp.11,22" } ], "basisCopy": "400 ± 50 mJ/cm² on an i-line stepper is the reference dose the whole document is built around, including its delay studies and exposure-latitude work." }, "peb": { "temp_c": 120, "time_s": 60, "notes": "Consistent 120°C/60 s across every process example in the document (pp.5,11,16-19); no alternate range is stated (unlike softbake).", "source": "p.5 (Process Conditions); corroborated pp.11,16-19" }, "floodExposure": null, "develop": { "developer": "AZ 300 MIF", "dilution": "2.38% TMAH (AZ 300 MIF, ready-to-use)", "time_s": null, "method": "puddle", "rinse": null, "source": "p.5 (Process Conditions); corroborated 'AZ 300 MIF/3x50sec Spray/Puddle @23°C' pp.11,16-19" }, "hardbake": null, "descum": null, "applications": [ "etch-mask", "electroplating-molding", "high-aspect-ratio" ], "etchResistance": "Cover page title lists 'Cu RDL, TSV, and other plating & etch applications' but the document gives no etch rate, selectivity, or other quantified etch-resistance data anywhere.", "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ Kwik Strip, 70°C, 3 min (p.21 Ni/Cu Plating Compatibility; corroborated p.23 Summary: 'stripped completely in AZ Kwik Strip at 70°C for 3 min')", "storage": null, "notes": "AZ 15nXT (450 CPS) is a chemically amplified negative-tone resist built specifically for Cu RDL and TSV plating/etch masks, not a general-purpose thick film. Because it is CAR chemistry, the post-exposure bake (120°C/60 s here) is the step that actually defines the pattern - unlike a DNQ resist, exposure alone does not develop the image. The document reports both exposure-to-PEB and coat-to-exposure delay studies on copper out to 23 hours with only minor CD drift (roughly 4.85-4.95 µm at a 5 µm nominal line across most of the delay window), suggesting this grade is comparatively forgiving of queue-time variation once softbaked, though no rehydration statement is made either way. Edge bead is pronounced at low spin speed and should be planned for on production coaters. Stripping is a single documented step (AZ Kwik Strip, 70°C/3 min) with no underplating reported after Cu, Ni, or Au electroplating.", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Sacrificial Layer Technique for Releasing Metallized Multilayer SU-8 Devices", "authors": "Tatikonda et al.", "journal": "Micromachines", "year": 2018, "doi": "10.3390/mi9120673", "url": "https://doi.org/10.3390/mi9120673", "accessedDate": "2026-07-16", "summary": "AZ 15nXT is proposed as a sacrificial layer that stays chemically stable through SU-8 processing; the authors give two cross-linking routes and three release routes to free metallized multilayer SU-8 devices such as an electrospray-ionization chip." } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_15nxt_450cps_photoresist.pdf", "datasheetVersionOrDate": "January 2009", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "az-40xt", "name": "AZ 40XT-11D", "manufacturer": "Merck KGaA, Darmstadt, Germany", "productLine": "AZ 40XT", "aliases": [ "AZ 40XT", "AZ 40XT-11D Photoresist", "40XT-11D" ], "tone": "positive", "chemistry": "car", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not address grayscale or 3D patterning for AZ 40XT-11D; no such use is claimed anywhere in the document.", "status": "active", "successorSlug": null, "summary": "AZ 40XT-11D is a chemically amplified, thick positive-tone photoresist for TSV, plating and RIE-etch applications, giving single-coat films from 20 µm to over 60 µm with no post-softbake rehydration wait but a required post-exposure bake.", "thicknessRange": { "min_um": 20, "max_um": 60, "basis": "stated", "source": "stated — p.1 APPLICATION bullet: 'Single coat thicknesses from 20 to >60µm', verbatim. The '>60µm' upper bound is inherently open-ended; max_um is recorded as 60 (the floor of the stated inequality), not a hard ceiling. Demonstrated reference processes in the document (40 µm and 45 µm single coats, p.2-6) sit comfortably inside this stated range." }, "spinCurves": [ { "label": "AZ 40XT-11D", "points": [ { "rpm": 1000, "um": 65 }, { "rpm": 1500, "um": 46 }, { "rpm": 2000, "um": 35 }, { "rpm": 2500, "um": 29 }, { "rpm": 3000, "um": 25 }, { "rpm": 3500, "um": 21 }, { "rpm": 4000, "um": 18 } ], "source": "read from figure, \"SPIN CURVE (200mm Silicon)\", p.1 of AZ 40XT-11D Photoresist technical datasheet (Rev. 7/2016) — a single curve for one product, no multi-grade ambiguity", "figureRead": true } ], "spinNotes": "Chart conditions (p.1, in-figure annotation): coat by hand dispense at 30 rpm, spin 1000-3000 rpm for 20 seconds, then bake 125°C/7 min. As an 'ultra-high viscosity' material (p.7, PROCESS CONSIDERATIONS > COATING), careful control of nozzle height, dispense rate, dispense volume, and spin parameters is needed to avoid bubbles/voids; hand-coating should use a beaker with an integrated pour spout (a pipette or dropper is explicitly NOT recommended), pouring close to the wafer surface after letting any bubbles dissipate. The datasheet itself notes final film thickness depends on the combination of spin speed AND spin time, not spin speed alone, so the plotted curve (spun to equilibrium) is only one data point in that space.", "adhesion": { "hmds": true, "notes": "Oxide-forming substrates (e.g. Si) should be HMDS primed prior to coating AZ 40XT (PROCESS CONSIDERATIONS > SUBSTRATE PREPARATION, p.7)." }, "rehydration": "None required — this is a key differentiator from the DNQ thick resists elsewhere in this recipe set. p.1 (APPLICATION) states 'No post bake rehydration delays required', and every reference process in this datasheet lists 'Post Bake Delay: None' (p.2, p.4, p.6). (Source: TYPICAL PROCESS, p.1, and REFERENCE PROCESS tables, p.2, p.4, p.6 of AZ 40XT-11D Photoresist technical datasheet (Rev. 7/2016))", "softbake": { "temp_c": 125, "tempRange_c": { "min": 115, "max": 125 }, "time_s": null, "method": "hotplate", "notes": "The same bake runs in all three reference processes (40 µm on Si, 40 µm on Cu, 45 µm on Cu): a three-stage ramped/proximity bake at 125°C — 120 s at a 1.27 mm gap, 120 s at 0.63 mm, then 180 s in full contact, 420 s total. It is a staged proximity ramp, not a single flat-contact soak. Soft-bake temperature should generally sit in the 115-125°C range, and ramping the temperature or standing the wafer off the plate is required to stop the film bubbling as solvent leaves this very thick coat.", "source": "Reference Process tables, p.2, p.4, p.6 of AZ 40XT-11D Photoresist technical datasheet (Rev. 7/2016)" }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 400, "source": "REFERENCE PROCESS (40µm Film Thickness on 200mm Si), p.2-3 of AZ 40XT-11D Photoresist technical datasheet (Rev. 7/2016)" } ], "basisCopy": "400 mJ/cm² i-line is the reference dose for a 40 µm film on silicon. Copper changes it a lot: 900 mJ/cm² for the same 40 µm, and 1000 mJ/cm² for a 45 µm plating film." }, "peb": { "temp_c": 105, "tempRange_c": { "min": 100, "max": 110 }, "time_s": null, "notes": "A PEB is required for proper imaging — AZ 40XT is chemically amplified, not a DNQ resist. General guidance is 100-110°C. The reference processes run a three-stage ramped/proximity PEB at 105°C: 10 s at a 1.3 mm gap, 10 s at 0.6 mm, then 80 s in full contact, 100 s total — again a staged ramp rather than a single soak. Note that the datasheet's summary line quotes this bake as 105°C/120 s, 20 s longer than the staged sequence sums to.", "source": "TYPICAL PROCESS, p.1, and REFERENCE PROCESS tables, p.2, p.4, p.6 of AZ 40XT-11D Photoresist technical datasheet (Rev. 7/2016)" }, "floodExposure": null, "develop": { "developer": "AZ 300MIF", "dilution": "undiluted (ready-to-use 0.26N / 2.38% TMAH developer; no dilution ratio stated)", "time_s": 240, "method": "puddle", "rinse": null, "source": "REFERENCE PROCESS (40µm Film Thickness on 200mm Si), p.2 of AZ 40XT-11D Photoresist technical datasheet (Rev. 7/2016): '4 x 60 second puddles', matching the p.1 front-page demo caption 'AZ 300 MIF Develop (240s)'" }, "hardbake": { "temp_c": 80, "tempRange_c": { "min": 80, "max": 85 }, "time_s": 300, "notes": "General guidance (p.7, PROCESS CONSIDERATIONS > HARD BAKE) is 80-85°C to ensure minimal thermal distortion; hard baking is typically NOT required for plating applications and, where used, may improve adhesion for wet-etch or pattern stability for dry-etch. The one reference process that does hard bake (20 µm Cu-plated studs after strip, p.4) used 80°C/5 minutes specifically, which is the value recorded here.", "source": "20µm Studs Post Cu Plate and Strip, p.4, and PROCESS CONSIDERATIONS > HARD BAKE, p.7, of AZ 40XT-11D Photoresist technical datasheet (Rev. 7/2016)" }, "descum": null, "applications": [ "electroplating-molding", "high-aspect-ratio", "etch-mask" ], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ 400T (solvent-based remover), recommended generically per PROCESS CONSIDERATIONS > STRIPPING (p.7). Demo strip conditions vary between reference processes: AZ 400T @ 55°C/10 minutes (p.4, 40 µm Cu-plating process) vs. AZ 400T @ 70°C/5 minutes (p.6, 45 µm high-speed Cu-plating process).", "storage": "Combustible liquid; store in sealed original containers in a well-ventilated, dry area away from heat, light, oxidizers, reducers, and sources of ignition. Recommended storage temperature 30-55°F (as printed, p.8, STORAGE).", "notes": "AZ 40XT-11D is a chemically amplified thick positive resist, the odd one out among AZ's thick-film positive resists in this recipe set: unlike the DNQ resists (P4620, 10XT), it requires NO post-softbake rehydration wait (every reference process here lists 'Post Bake Delay: None') but DOES require a post-exposure bake, and skipping that PEB is the classic failure mode for this material — without it the pattern will not image properly. Both softbake and PEB are run as ramped/proximity bakes (three discrete stages at decreasing hotplate proximity) rather than a single flat contact bake, specifically to avoid solvent-outgassing bubbles in these very thick (20 to over 60 µm) single coats. It develops in AZ 300MIF, a 0.26N (2.38%) TMAH developer, applied as puddle cycles rather than a single immersion step. Exposure dose scales sharply with substrate: roughly 400 mJ/cm² at 365 nm for a 40 µm coat on silicon versus 900-1000 mJ/cm² for a comparable coat on copper. Hard bake is generally unnecessary for plating use and, when applied, should stay in the 80-85°C range to avoid thermally distorting the pattern.", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Advanced fabrication process for particle absorbers of highly pure electroplated gold for microcalorimeter applications", "authors": "Muller et al.", "journal": "Journal of Applied Physics", "year": 2024, "doi": "10.1063/5.0238524", "url": "https://doi.org/10.1063/5.0238524", "accessedDate": "2026-07-16", "summary": "AZ 40XT was chosen as the upper layer of a double-resist stack for its 15-100 um thickness range, the authors noting that as a chemically amplified resist it gives steep edges at comparatively low dose and short development, and used again as a single layer for the second gold absorber half." }, { "type": "paper", "title": "Universal mask for hard x rays", "authors": "Ceddia et al.", "journal": "Optica", "year": 2023, "doi": "10.1364/OPTICA.490006", "url": "https://doi.org/10.1364/OPTICA.490006", "accessedDate": "2026-07-16", "summary": "AZ 40XT-11D was spin-coated and baked at 126 C for 5 min as the patterning layer for the absorber mask used in a hard x-ray ghost-projection demonstration." } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_40xt_11d_photoresist.pdf", "datasheetVersionOrDate": "Rev. 7/2016", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": true }, { "slug": "az-4533", "name": "AZ 4533", "manufacturer": "Merck (AZ Electronic Materials)", "productLine": "AZ 4500 series", "aliases": [ "AZ4533", "AZ 4533 Photoresist" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not mention grayscale or 3D lithography anywhere. Its entire focus is achieving high single-coat film thickness (reduced spin time, multi-coat with bake cycles, adjusted exposure dose to fully clear thick films) and general processing guidelines — no grayscale-specific guidance (e.g. partial-exposure dose modulation, grayscale mask compatibility) is given.", "status": "active", "successorSlug": null, "summary": "AZ 4533 is the lower-viscosity of the AZ 4500 series' two thick-film grades — the everyday pick for single-coat films in the low-few-micron range, where the higher-viscosity AZ 4562 is reserved for much thicker coats and its special multi-coat techniques. AZ 4533 is a thick-film member of Merck's AZ 4500 series of positive photoresists, formulated with a low-absorption photoactive compound so it can be coated in a single spin step at thicknesses of roughly 2.7-4.7 µm.", "thicknessRange": { "min_um": 2.69, "max_um": 4.67, "basis": "curve-span", "source": "curve-span: taken directly from the printed \"FILM THICKNESS [µm] as FUNCTION of SPIN SPEED\" table (p.2), which tabulates AZ 4533 at 2000-6000 rpm (4.67 µm at 2000 rpm down to 2.69 µm at 6000 rpm). The series-wide prose claim of usable thicknesses 'up to 50 µm' (p.1, GENERAL INFORMATION) is a whole-series statement covering special multi-coat/reduced-spin-time techniques and the higher-viscosity AZ 4562 grade, not a single-coat figure for AZ 4533 specifically, so it was not used here. [RECLASSIFIED during audit: the extraction agent labelled this \"stated\", but a printed thickness-vs-spin-speed table IS the spin curve, so its min/max is a curve span, not a manufacturer-stated achievable range. The reasoning above is unchanged and correct.]" }, "spinCurves": [ { "label": "AZ 4533 as supplied", "points": [ { "rpm": 2000, "um": 4.67 }, { "rpm": 3000, "um": 3.81 }, { "rpm": 4000, "um": 3.3 }, { "rpm": 5000, "um": 2.95 }, { "rpm": 6000, "um": 2.69 } ], "source": "numeric table \"FILM THICKNESS [µm] as FUNCTION of SPIN SPEED (characteristically)\", p.2 of AZ 4500 Series Technical Datasheet (Merck, Rev. 03/21)." } ], "spinNotes": "Datasheet states the common spin time is about 30-40 s for standard coating. No dispense volume, ramp/acceleration, or static-vs-dynamic dispense is given. The spin-speed table above is captioned 'characteristically', i.e. representative rather than guaranteed values. Dilution/edge-bead removal uses AZ EBR Solvent or AZ EBR 70/30 (PROCESSING GUIDELINES, p.2). AZ 4533-specific reduced-spin-time or multi-coat techniques for extra-thick films are not discussed in this datasheet — those special techniques (3 s spin, multi-coat with bake cycle) are described only for AZ 4562 (the highest-viscosity grade).", "adhesion": { "hmds": null, "notes": "Datasheet does not address substrate priming or HMDS for the AZ 4500 series; there is no SUBSTRATE PREPARATION section (unlike the AZ 1500 series datasheet from the same manufacturer)." }, "rehydration": null, "softbake": { "temp_c": 100, "time_s": 50, "method": "hotplate", "notes": "Series-wide PROCESSING GUIDELINES value, not stated as AZ 4533-specific vs AZ 4562-specific — the table applies to both grades. For very thick coatings the datasheet separately advises (p.1, GENERAL INFORMATION) leaving the resist at room temperature at least 15 minutes before prebake to let solvent evaporate, and preferring a hotplate with a ramped temperature over an oven, to avoid trapped-solvent bubbling and adhesion failure.", "source": "PROCESSING GUIDELINES, p.2 (\"Prebake: 100°C, 50\", hotplate\")" }, "exposureDose": { "doses": [], "basisCopy": "AZ 4533 gets a 310 to 440 nm sensitivity range and no dose. The only energy number in the sheet is a general thick-film warning — above 1000 mJ/cm² in extreme cases — not a figure for this grade's 2.7 to 4.7 µm films." }, "peb": { "temp_c": null, "time_s": null, "notes": "\"PEB: not required, optional with monochromatic exposure.\" No temperature or time is given for the optional case.", "source": "PROCESSING GUIDELINES, p.2" }, "floodExposure": null, "develop": { "developer": "AZ 340 (AZ 400K also usable)", "dilution": "AZ 340 diluted 1:5 with water; no dilution stated for AZ 400K.", "time_s": null, "method": null, "rinse": null, "source": "PROCESSING GUIDELINES, p.2 (\"Development: AZ 340, 1:5, 30\"/µm film thickness\"); GENERAL INFORMATION, p.2" }, "hardbake": { "temp_c": 115, "time_s": 50, "notes": "Hotplate condition (115°C, 50 s). Datasheet gives an alternative of 115°C for 60 minutes (3600 s) in an oven.", "source": "PROCESSING GUIDELINES, p.2 (\"Postbake: 115°C, 50s hotplate or 60 min. oven\")" }, "descum": null, "applications": [], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": null, "stripper": "AZ 100 Remover, concentrated. Source: PROCESSING GUIDELINES, p.2.", "storage": "Store in sealed original containers between 0°C and 25°C; brief excursions do not adversely affect properties (+27°C for 10 hours, +32°C for 6 hours, or +35°C for 5 hours). Shelf life is 1 year at recommended storage conditions; the expiration date is printed on each bottle's label. Source: HANDLING ADVISES, p.3.", "notes": "AZ 4533 is a thick-film member of Merck's AZ 4500 series, formulated (per p.1) with a photoactive compound of \"low absorption and reduced nitrogen content\" specifically so film thicknesses above the ~3 µm ceiling of standard positive resists can still be fully exposed and cleared without the crosslinking or nitrogen-trapping side effects that appear when a standard resist is pushed to extreme thickness. Reach for AZ 4533 when a moderate thick coat in the few-micron range is enough and a straightforward single-spin process is wanted; step up to AZ 4562 only when the target film is thicker than AZ 4533's standard spin range or needs the reduced-spin-time or multi-coat methods. Unlike the datasheet's introduction, which discusses AZ 4562's special coating techniques (reduced spin time, multi-coat) for very thick films, no such special technique is documented specifically for AZ 4533. This datasheet has no dedicated APPLICATION section and does not name specific end-uses (etch mask, lift-off, plating, etc.) — its content is limited to achieving and processing the thick coating itself, so the applications field is left empty rather than inferred. Develop time is a rate (30 s per µm of film thickness) rather than a fixed duration, and PEB is optional and only relevant to monochromatic exposure. No HMDS/adhesion-promotion guidance is given, unlike the AZ 1500 series datasheet from the same manufacturer. Chemistry classified as dnq-novolak from MicroChemicals' statement that AZ/TI resist resin is novolak and the photoactive compound belongs to the diazonaphthoquinone (DNQ) group.", "developerFamily": "buffered-alkaline", "references": [ { "type": "paper", "title": "Microscopic geared metamachines", "authors": "Wang et al.", "journal": "Nature Communications", "year": 2025, "doi": "10.1038/s41467-025-62869-6", "url": "https://doi.org/10.1038/s41467-025-62869-6", "accessedDate": "2026-07-16", "summary": "A 4 um AZ4533 layer was spin-coated as a sacrificial layer beneath an SU-8 cap and later dissolved in acetone to release optically driven micro-gears.", "note": "AZ 4533 is used here as a sacrificial release layer; the direct laser writing in this paper patterned the SU-8 cap above it, not the AZ 4533 itself." }, { "type": "paper", "title": "Fabrication of 3D microstructures using grayscale lithography", "authors": "Lima et al.", "journal": "Advanced Optical Technologies", "year": 2019, "doi": "10.1515/aot-2019-0023", "url": "https://doi.org/10.1515/aot-2019-0023", "accessedDate": "2026-07-16", "summary": "An 8 um AZ 4562 film was exposed on a Heidelberg DWL 66FS laser direct-write system using 128 grayscale levels, calibrated gray value against exposure depth, and transferred into silicon by RIE at 1:1 selectivity and into Cu and NiCo by electroplating.", "note": "Family-level citation: this paper used AZ 4562, the higher-viscosity grade of the same AZ 4500 series, not AZ 4533. Cited as evidence of AZ 4500-series behaviour under grayscale direct-write exposure; the thickness and dose figures are 4562's and do not transfer to this grade." } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_4500_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.microchemicals.com/AZ-4533-Photoresist-3.785-l/1A004533", "what": "MicroChemicals states: 'The resin of AZ and TI resists is Novolak... photo active compound... belongs to the group of diazonaphthoquinones (DNQ)'; the basis for classifying AZ 4533 as dnq-novolak." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-4562", "name": "AZ 4562", "min_um": 5.06, "max_um": 8.77, "doseBasis": null } ], "humanVerified": false }, { "slug": "az-4562", "name": "AZ 4562", "manufacturer": "Merck (AZ Electronic Materials)", "productLine": "AZ 4500 series", "aliases": [ "AZ4562", "AZ 4562 Photoresist" ], "tone": "positive", "chemistry": null, "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not mention grayscale or 3D lithography anywhere. Its entire focus is achieving high single-coat and multi-coat film thickness (up to 50 µm with special techniques) and the exposure/development adjustments that thick-film coating requires — no grayscale-specific guidance (e.g. partial-exposure dose modulation, grayscale mask compatibility, tone-ramp behavior) is given for AZ 4562, despite it being the series' highest-viscosity, thickest-film grade. Grayscale suitability should not be assumed from thick-film capability alone; it is not addressed here.", "status": "active", "successorSlug": null, "summary": "AZ 4562 is the AZ 4500 series' thick-film flagship — the grade to choose when a single AZ 4533 coat cannot reach the required thickness, or when a process needs the extreme films only its special coating techniques provide. AZ 4562 is the highest-viscosity, thickest-film member of Merck's AZ 4500 series of positive photoresists, capable of single-coat films of roughly 5-9 µm at standard spin speeds, and — using reduced spin time or multi-coat bake cycles — films up to 50 µm.", "thicknessRange": { "min_um": 5.06, "max_um": 8.77, "basis": "curve-span", "source": "curve-span: taken directly from the printed \"FILM THICKNESS [µm] as FUNCTION of SPIN SPEED\" table (p.2), which tabulates AZ 4562 at 2000-6000 rpm (8.77 µm at 2000 rpm down to 5.06 µm at 6000 rpm). The series-wide prose claim of usable thicknesses 'up to 50 µm' (p.1, GENERAL INFORMATION) requires the special coating techniques described below (reduced spin time down to 3 s, or multi-coat with an inter-bake), not a single standard spin step, so it was not used as the stated single-coat range. [RECLASSIFIED during audit: the extraction agent labelled this \"stated\", but a printed thickness-vs-spin-speed table IS the spin curve, so its min/max is a curve span, not a manufacturer-stated achievable range. The reasoning above is unchanged and correct.]" }, "spinCurves": [ { "label": "AZ 4562 as supplied", "points": [ { "rpm": 2000, "um": 8.77 }, { "rpm": 3000, "um": 7.16 }, { "rpm": 4000, "um": 6.2 }, { "rpm": 5000, "um": 5.55 }, { "rpm": 6000, "um": 5.06 } ], "source": "numeric table \"FILM THICKNESS [µm] as FUNCTION of SPIN SPEED (characteristically)\", p.2 of AZ 4500 Series Technical Datasheet (Merck, Rev. 03/21)." } ], "spinNotes": "GENERAL INFORMATION (p.1) states AZ 4562 \"allows to spin coat 10 µm in a single step (2000 rpm)\" — this rounded prose figure disagrees with the precise tabulated value of 8.77 µm at 2000 rpm on p.2; the tabulated value is the one plotted here, being the more precise, directly tabulated figure. For thicker films the datasheet describes two special techniques specific to AZ 4562: (1) reducing the common ~30-40 s spin time to only 3 s, yielding ~20 µm, but the substrate must then be left horizontal on the spinner for an additional minute to dry; (2) multiple coating with a bake cycle in between (inter-coat bakes must not exceed 90°C or the final prebake temperature, whichever is lower), exploiting the fact that AZ 4562's high solids content (close to its dissolution limit) means the underlying coat is only minimally redissolved. No dispense volume or ramp/acceleration is given for either the standard or special techniques.", "adhesion": { "hmds": null, "notes": "Datasheet does not address substrate priming or HMDS for the AZ 4500 series; there is no SUBSTRATE PREPARATION section (unlike the AZ 1500 series datasheet from the same manufacturer)." }, "rehydration": null, "softbake": { "temp_c": 100, "time_s": 50, "method": "hotplate", "notes": "Series-wide PROCESSING GUIDELINES value, not stated as AZ 4562-specific vs AZ 4533-specific — the table applies to both grades and assumes a standard single coat, not the special thick-film techniques. For thick coatings the datasheet separately advises (p.1, GENERAL INFORMATION) leaving the resist at room temperature at least 15 minutes before prebake to let solvent evaporate, and preferring a hotplate with a ramped temperature over an oven, to avoid trapped-solvent bubbling and adhesion failure. For AZ 4562 multi-coating specifically, inter-coat bakes must not exceed 90°C or the final prebake temperature (whichever is lower).", "source": "PROCESSING GUIDELINES, p.2 (\"Prebake: 100°C, 50\", hotplate\"); GENERAL INFORMATION, p.1 (multi-coat inter-bake constraint)" }, "exposureDose": { "doses": [], "basisCopy": "AZ 4562 has no published dose; it is sensitive from 310 to 440 nm, and its lower-absorption sensitizer exists so thick coats clear at the bottom without over-dosing and crosslinking the surface." }, "peb": { "temp_c": null, "time_s": null, "notes": "\"PEB: not required, optional with monochromatic exposure.\" No temperature or time is given for the optional case.", "source": "PROCESSING GUIDELINES, p.2" }, "floodExposure": null, "develop": { "developer": "AZ 340 (AZ 400K also usable)", "dilution": "AZ 340 diluted 1:5 with water; no dilution stated for AZ 400K.", "time_s": null, "method": null, "rinse": null, "source": "PROCESSING GUIDELINES, p.2 (\"Development: AZ 340, 1:5, 30\"/µm film thickness\"); GENERAL INFORMATION, p.2" }, "hardbake": { "temp_c": 115, "time_s": 50, "notes": "Hotplate condition (115°C, 50 s). Datasheet gives an alternative of 115°C for 60 minutes (3600 s) in an oven.", "source": "PROCESSING GUIDELINES, p.2 (\"Postbake: 115°C, 50s hotplate or 60 min. oven\")" }, "descum": null, "applications": [], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": null, "stripper": "AZ 100 Remover, concentrated. Source: PROCESSING GUIDELINES, p.2.", "storage": "Store in sealed original containers between 0°C and 25°C; brief excursions do not adversely affect properties (+27°C for 10 hours, +32°C for 6 hours, or +35°C for 5 hours). Shelf life is 1 year at recommended storage conditions; the expiration date is printed on each bottle's label. Source: HANDLING ADVISES, p.3.", "notes": "AZ 4562 is the highest-viscosity grade in Merck's AZ 4500 series, formulated (per p.1) with a photoactive compound of \"low absorption and reduced nitrogen content\" so that films far thicker than the ~3 µm ceiling of standard positive resists can still be fully exposed through their depth without surface crosslinking or nitrogen-bubble lifting. Choose AZ 4562 over AZ 4533 whenever the film has to be thicker than the thinner grade's standard spin range delivers, or when only its reduced-spin-time or multi-coat routes can reach the target — for ordinary few-micron coats, AZ 4533 remains the simpler choice. It is the only grade in this datasheet with documented special coating techniques for extreme thickness: a 3 s reduced spin time (with the wafer left horizontal an extra minute to dry) for ~20 µm films, or multi-coating with inter-coat bakes capped at 90°C (or the final prebake temperature, whichever is lower) for still-thicker stacks, up to a series-wide ceiling of 50 µm. A minor internal inconsistency exists between the prose claim of '10 µm in a single step (2000 rpm)' (p.1) and the tabulated 8.77 µm at 2000 rpm (p.2) — the table value is used in the spin curve here as the more precise figure, but this is worth a human check against the source PDF. This datasheet has no dedicated APPLICATION section, does not name specific end-uses (etch mask, lift-off, plating, etc.), and does not address grayscale or 3D lithography despite being the series' thick-film flagship grade — none of those are asserted here. Develop time is a rate (30 s per µm of film thickness) rather than a fixed duration, and PEB is optional and only relevant to monochromatic exposure. No HMDS/adhesion-promotion guidance is given, unlike the AZ 1500 series datasheet from the same manufacturer.", "developerFamily": "buffered-alkaline", "references": [ { "type": "paper", "title": "Fabrication of 3D microstructures using grayscale lithography", "authors": "Lima et al.", "journal": "Advanced Optical Technologies", "year": 2019, "doi": "10.1515/aot-2019-0023", "url": "https://doi.org/10.1515/aot-2019-0023", "accessedDate": "2026-07-16", "summary": "An 8 um AZ 4562 film was exposed on a Heidelberg DWL 66FS laser direct-write system using 128 grayscale levels, calibrated gray value against exposure depth, and transferred into silicon by RIE at 1:1 selectivity and into Cu and NiCo by electroplating." }, { "type": "paper", "title": "Design of U-Shaped Frequency Tunable Microwave Filters in MEMS Technology", "authors": "Giacomozzi et al.", "journal": "Sensors", "year": 2023, "doi": "10.3390/s23010466", "url": "https://doi.org/10.3390/s23010466", "accessedDate": "2026-07-16", "summary": "Two successive thick AZ 4562 moulds were defined over a Cr/Au seed layer for selective gold electroplating of the 1.8 um bridge layer and the 3 um coplanar-waveguide layer of an RF-MEMS tunable filter." }, { "type": "paper", "title": "Step-and-Repeat Nanoimprint-, Photo- and Laser Lithography from One Customised CNC Machine", "authors": "Greer et al.", "journal": "Nanoscale Research Letters", "year": 2016, "doi": "10.1186/s11671-016-1341-9", "url": "https://doi.org/10.1186/s11671-016-1341-9", "accessedDate": "2026-07-16", "summary": "AZ4562 was spun to 5 um and developed in 1:5 AZ400K, benchmarking mask-based photolithography against nanoimprint and laser lithography on a single custom CNC platform.", "note": "AZ 4562 was exposed through a photomask in this study; the paper's laser-lithography module was tested with other resists." } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_4500_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-4533", "name": "AZ 4533", "min_um": 2.69, "max_um": 4.67, "doseBasis": null } ], "humanVerified": false }, { "slug": "az-5214e", "name": "AZ 5214E", "manufacturer": "MicroChemicals / Merck Performance Materials GmbH", "productLine": "AZ 5200 series", "aliases": [ "AZ5214E", "AZ 5214 E", "AZ 5214-E" ], "tone": "image-reversal", "chemistry": "dnq-novolak", "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet; the resist is formulated around a crosslinking image-reversal mechanism and is not marketed for grayscale/3D lithography.", "status": "active", "successorSlug": null, "summary": "AZ 5214E is a novolak/DNQ (diazonaphthoquinone) positive photoresist from Merck's AZ line that is almost exclusively used in image-reversal (IR) mode: a special crosslinking agent activated by a reversal bake makes exposed areas insoluble, so a subsequent flood exposure and standard positive development yields a negative-tone image with a re-entrant (undercut) sidewall profile ideally suited to lift-off metallization.", "thicknessRange": { "min_um": 1.14, "max_um": 1.98, "basis": "curve-span", "source": "curve-span: the AZ 5214E datasheet states no achievable-thickness range in prose; its only thickness data is the printed \"FILM THICKNESS [µm] as FUNCTION of SPIN SPEED (characteristically)\" table (p.2: 1.98/1.62/1.40/1.25/1.14 µm at 2000/3000/4000/5000/6000 rpm), which is this recipe's spin curve. min/max are the span of that table." }, "spinCurves": [ { "label": "as supplied", "points": [ { "rpm": 2000, "um": 1.98 }, { "rpm": 3000, "um": 1.62 }, { "rpm": 4000, "um": 1.4 }, { "rpm": 5000, "um": 1.25 }, { "rpm": 6000, "um": 1.14 } ], "source": "numeric table \"FILM THICKNESS [µm] as FUNCTION of SPIN SPEED (characteristically)\", p.2 of MicroChemicals/Merck AZ 5214E Technical Data Sheet" } ], "spinNotes": "Datasheet gives no accel/dispense/edge-bead procedure beyond naming AZ EBR Solvent for dilution/edge-bead removal (Processing Guidelines table, p.3). 4000 rpm (1.40 µm) is bolded in the source table, suggesting it as the reference/typical spin speed, though the datasheet does not explicitly label it as such.", "adhesion": { "hmds": null, "notes": "HMDS/adhesion promotion is not mentioned anywhere in this datasheet." }, "rehydration": null, "softbake": { "temp_c": 110, "time_s": 50, "method": "hotplate", "notes": null, "source": "Processing Guidelines table, p.3: \"Prebake 110°C, 50\", hotplate\"" }, "exposureDose": { "doses": [], "basisCopy": "No absolute dose is published for AZ 5214E, only ratios to a standard positive process in the same resist: the image-wise exposure is about half the positive dose, the flood exposure about double the positive dose." }, "peb": { "temp_c": 120, "tempRange_c": { "min": 115, "max": 125 }, "time_s": 120, "notes": "This is the image-reversal (\"reversal bake\", RB) step, not a conventional PEB — AZ 5214E's process has no separate post-exposure bake before flood exposure; the reversal bake occupies that position in the sequence. 120°C/2 min is the datasheet's example condition in the Processing Guidelines table, but the text stresses this must be individually optimized per line/equipment and always falls within 115–125°C, held constant within ±1°C (\"the most critical parameter of the IR-process\"). Above ~130°C the resist thermally crosslinks even in unexposed areas and destroys the pattern.", "source": "Processing Guidelines table, p.3 (\"Reversal bake 120°C, 2 min., hotplate (most critical step)\"); temperature-optimization procedure and ±1°C/115–125°C range, General Information, p.1" }, "floodExposure": { "dose_mJcm2": 200, "notes": "Flood exposure (no mask) is described as \"absolutely uncritical\" as long as sufficient energy is applied; > 200 mJ/cm² is called a good choice, and anywhere from 150–500 mJ/cm² has no major influence on performance.", "source": "AZ 5214E TDS, p.1–3 (General Information + Processing Guidelines table: \"Flood exposure > 200 mJ/cm² (uncritical)\")" }, "develop": { "developer": "AZ 340 (metal-ion-containing) or AZ 726 MIF (metal-ion-free)", "dilution": "AZ 340 used 1:5 diluted; AZ 726 MIF used as supplied", "time_s": null, "method": "AZ 340: tank or spray; AZ 726 MIF: puddle", "rinse": null, "source": "Processing Guidelines table, p.3: \"Development AZ 340, 1:5 (tank, spray) or AZ 726 (puddle)\"" }, "hardbake": { "temp_c": 120, "time_s": 50, "notes": "Labeled \"Postbake\" and explicitly optional.", "source": "Processing Guidelines table, p.3: \"Postbake 120°C, 50s hotplate (optional)\"" }, "descum": null, "applications": [ "lift-off", "image-reversal" ], "etchResistance": null, "liftoffSuitable": true, "platingSuitable": false, "stripper": "AZ 100 Remover, concentrate (Processing Guidelines table, p.3: \"Removal AZ 100 Remover, conc.\")", "storage": "Store in sealed original containers, protected from light and heat, between 0°C and 25°C; brief excursions to -5°C or +30°C for up to 24 hours do not adversely affect properties. Shelf life is limited; expiration date is printed on the bottle label as [year/month/day]. (Handling Advises, p.3)", "notes": "AZ 5214E is a positive DNQ/novolak resist that is almost exclusively run in image-reversal mode for lift-off, producing a negative (re-entrant) sidewall profile instead of the ~75-85° positive slope of standard positive processing. The reversal-bake temperature is the single most process-sensitive parameter: it must be individually tuned (typically 115-125°C) and held within ±1°C, since a few degrees too high causes thermal crosslinking even in unexposed regions and destroys the pattern; the datasheet gives a explicit calibration procedure for finding it. By contrast, the flood exposure step is deliberately forgiving (150-500 mJ/cm² all work). A T-shaped (overhanging-lip) lift-off profile can also be produced with a modified sequence: light flood exposure before the reversal bake, then normal imagewise exposure and development.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Standard AZ 5214E photoresist in laser interference and EBDW lithographies", "authors": "Škriniarová et al.", "journal": "Vacuum", "year": 2015, "doi": "10.1016/j.vacuum.2014.09.012", "url": "https://doi.org/10.1016/j.vacuum.2014.09.012", "accessedDate": "2026-07-15", "summary": "AZ 5214E run as an e-beam resist, not just UV" }, { "type": "paper", "title": "High thickness material lift-off using multi-layer photoresist", "authors": "Elshenety et al.", "journal": "Journal of Micromechanics and Microengineering", "year": 2025, "doi": "10.1088/1361-6439/adac6b", "url": "https://doi.org/10.1088/1361-6439/adac6b", "accessedDate": "2026-07-15", "summary": "Stacked multi-layer 5214E lifts off more than 6 µm of electroplated Cu — 4× its single-coat thickness" } ], "troubleshooting": [ { "q": "How does AZ 5214E image reversal work?", "a": "Coat and soft-bake (110 °C, 50 s), then imagewise expose. The key step is the reversal bake at ~120 °C (individually optimized within 115–125 °C, held to ±1 °C), which crosslinks the exposed areas and makes them insoluble. A blanket flood exposure (>200 mJ/cm², no mask) then makes the originally unexposed areas soluble, and standard positive development yields a negative-tone image with the re-entrant (undercut) sidewall wanted for lift-off.", "source": "AZ 5214E Technical Data Sheet, Processing Guidelines table + General Information, p.1–3 (reversal bake 120 °C/2 min; flood exposure >200 mJ/cm²)" }, { "q": "Why is the reversal bake temperature so critical for AZ 5214E?", "a": "The reversal bake is the single most process-sensitive parameter. It must be individually tuned (typically 115–125 °C) and held within ±1 °C. A few degrees too high — above ~130 °C — thermally crosslinks the resist even in unexposed regions and destroys the pattern. The datasheet gives an explicit calibration procedure for finding the correct temperature. By contrast, the flood exposure step is deliberately forgiving.", "source": "AZ 5214E Technical Data Sheet, General Information, p.1 (reversal bake ±1 °C within 115–125 °C, 'most critical step')" }, { "q": "Which developer does AZ 5214E use?", "a": "AZ 340 (metal-ion-containing), used 1:5 diluted by tank or spray, or AZ 726 MIF (metal-ion-free), used as supplied by puddle development. The datasheet does not publish a fixed development time. The resist is stripped afterward with AZ 100 Remover (concentrate).", "source": "AZ 5214E Technical Data Sheet, Processing Guidelines table, p.3" }, { "q": "What exposure dose does AZ 5214E need in image-reversal mode?", "a": "The datasheet does not publish an absolute imagewise dose in mJ/cm² — only a relative rule of thumb: for image-reversal processing the patternwise exposure should be about half that of a standard positive process with the same resist, while the flood exposure should be about double. Exposure is stated qualitatively as broadband / h- and i-line, with 310–420 nm spectral sensitivity. Characterize the imagewise dose on-tool.", "source": "AZ 5214E Technical Data Sheet, p.2 (relative IR dose rule; no absolute mJ/cm² published)" }, { "q": "How much flood-exposure energy does AZ 5214E need?", "a": "The flood (blanket, no-mask) exposure is described as 'absolutely uncritical' as long as enough energy is applied. Greater than 200 mJ/cm² is called a good choice, and anywhere from 150–500 mJ/cm² has no major influence on performance.", "source": "AZ 5214E Technical Data Sheet, p.1–3 (flood exposure >200 mJ/cm², uncritical)" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_5214e_photoresist.pdf", "datasheetVersionOrDate": null, "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "az-9245", "name": "AZ 9245", "manufacturer": "AZ Electronic Materials (Clariant AG)", "productLine": "AZ 9200", "aliases": [ "AZ9245", "AZ 9245 (220 CPS)", "AZ 9245 Photoresist" ], "tone": null, "chemistry": null, "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed anywhere in this 1997 datasheet; grayscale/3D lithography is not a documented use case for this product.", "status": "active", "successorSlug": null, "summary": "AZ 9245 is the thinner (220 cP) of two viscosity grades in Clariant/AZ Electronic Materials' AZ 9200 high-resolution thick-resist line, coating to roughly 4.6-6.6 µm and resolving sub-micron lines and spaces at 4.6 µm film thickness, targeted at coil-plating and thin-film recording-head applications.", "thicknessRange": { "min_um": 4.6, "max_um": 6.6, "basis": "curve-span", "source": "curve-span — a printed numeric \"Film Thickness\" table (p.7, columns 2000/2500/3000/3500 rpm) gives AZ 9245 values across that range, extended by the single grade-specific anchor point in the \"Typical Process for 4.6 µm Film Thickness [AZ 9245 Photoresist (220 CPS)]\" table (p.6: Spin 3800 rpm, 60 sec → 4.6 µm). The series-wide stated figure in the intro (p.1), \"AZ 9200 photoresist is available in two viscosity grades for film thicknesses of 4 to 24 µm\", spans both AZ 9245 and AZ 9260 combined (9260 reaches the thicker end via multi-coat, per p.6), not AZ 9245 alone, so this grade's own curve-span is used instead." }, "spinCurves": [ { "label": "AZ 9245 (220 cP)", "points": [ { "rpm": 2000, "um": 6.6 }, { "rpm": 2500, "um": 5.8 }, { "rpm": 3000, "um": 5.2 }, { "rpm": 3500, "um": 4.8 }, { "rpm": 3800, "um": 4.6 } ], "source": "numeric table \"Film Thickness\" (columns 2000/2500/3000/3500 rpm, row \"AZ 9245 Photoresist 220 cP\"), p.7, combined with the single grade-specific anchor point from \"Typical Process for 4.6 µm Film Thickness [AZ 9245 Photoresist (220 CPS)]\" (Coat: Spin 3800 rpm, 60 sec → 4.6 µm target), p.6, of AZ 9200 Photoresist datasheet. Both are explicitly labeled AZ 9245 (220 cP) and are mutually consistent (monotonic decrease: 4.8 µm at 3500 rpm to 4.6 µm at 3800 rpm)." } ], "spinNotes": "The p.7 table's units are ambiguous in the source document — in places the values carry an \"Å\" (Angstrom) suffix (e.g. \"6 600 Å\"), and elsewhere the same figures appear as \"6.6um\" etc. A literal Angstrom reading (0.66 µm at 2000 rpm) would be physically inconsistent with the rest of the document: it would mean the film gets THICKER at the higher 3800 rpm point (4.6 µm, from the p.6 Typical Process table) than at the lower 2000 rpm point (0.66 µm), which violates basic spin-coating physics (thickness decreases with increasing spin speed). The µm reading is internally consistent with the 4.6 µm/3800 rpm anchor point and is the one used here. Coat/dispense and edge-bead removal are documented as explicit process steps for this grade (p.6): \"Coat: Dispense static or dynamic @ 300 rpm, Spin 3800 rpm/60 sec\" then \"Edge Bead Removal: Rinse 500 rpm/10 sec, Dry 1000 rpm/10 sec\" — both built into the same Typical Process table as softbake/exposure/develop. No rehydration hold is listed anywhere in this document — despite this being a thick resist, where a rehydration hold is sometimes expected, this specific 1997 datasheet's process tables simply do not include one.", "adhesion": { "hmds": null, "notes": "Not addressed anywhere in this datasheet — no substrate priming/HMDS guidance is given at all, unlike the Merck-era AZ documents processed alongside this one." }, "rehydration": "Not mentioned anywhere in this document. The grade-specific \"Typical Process for 4.6 µm Film Thickness [AZ 9245 Photoresist (220 CPS)]\" table (p.6) lists Coat → Softbake → Edge Bead Removal → Exposure → Post Exposure Bake (not recommended) → Development, with no separate rehydration step. This may be a gap in this particular 1997 datasheet rather than confirmation the process needs none, so nothing is asserted either way.", "softbake": { "temp_c": 110, "time_s": 120, "method": "hotplate", "notes": "Grade-specific: \"Softbake 110°C, 120 sec hotplate\" — Typical Process for 4.6 µm Film Thickness [AZ 9245 Photoresist (220 CPS)], p.6. Corroborated by matching \"Softbake Hotplate 110°C, 120 sec\" conditions on the Linearity [Broadband] and Focus Latitude [Broadband] test panels for the same 4.6 µm film thickness (p.2-3).", "source": "Typical Process for 4.6 µm Film Thickness [AZ 9245 Photoresist (220 CPS)], p.6 of AZ 9200 Photoresist datasheet." }, "exposureDose": { "doses": [ { "wavelength_nm": null, "value_mJcm2": 900, "source": "Typical Process for 4.6 µm Film Thickness [AZ 9245 Photoresist (220 CPS)], p.6; corroborated by Linearity [Broadband] and Focus Latitude [Broadband], p.2-3, of AZ 9200 Photoresist datasheet." } ], "basisCopy": "900 mJ/cm² on a broadband stepper is the documented dose for a 4.6 µm film, mid-way in a 780 to 1020 mJ/cm² sweep; the i-line numbers in the same document belong to the thicker 9260 grade." }, "peb": { "temp_c": null, "time_s": null, "notes": "\"Post Exposure Bake: not recommended in most applications\" — Typical Process for 4.6 µm Film Thickness [AZ 9245 Photoresist (220 CPS)], p.6. No PEB temperature or time is given because none is called for by default.", "source": "Typical Process for 4.6 µm Film Thickness [AZ 9245 Photoresist (220 CPS)], p.6 of AZ 9200 Photoresist datasheet." }, "floodExposure": null, "develop": { "developer": "AZ 400K Developer", "dilution": "1:4", "time_s": 120, "method": "spray", "rinse": "Spin rinse 300 rpm/20 sec, then spin dry 4000 rpm/15 sec (following the AZ 400K spray develop at 27°C dispense temperature).", "source": "Typical Process for 4.6 µm Film Thickness [AZ 9245 Photoresist (220 CPS)], p.6 of AZ 9200 Photoresist datasheet." }, "hardbake": null, "descum": null, "applications": [ "electroplating-molding", "high-aspect-ratio", "mems-structural" ], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ 400T and 300T strippers are recommended for removal of AZ 9200 photoresist; AZ S-46 stripper is a non-NMP solvent stripper particularly suited to thin film recording head applications (Companion Products, p.8).", "storage": "\"Keep in sealed original container. Protect from light and heat. Store between 30 and 70°F (–1 to 24°C). Refrigerate whenever possible. Refrigeration may extend shelf life. Empty container may contain harmful residue and vapors.\" (Storage, p.8).", "notes": "AZ 9245 (220 cP) is the thinner of two viscosity grades in this 1997 Clariant AZ 9200 thick-resist line, targeting a 4.6 µm single-coat film with sub-micron resolution (<1 µm lines/spaces per p.1) and 5-7:1 aspect ratios on broadband steppers. Its Typical Process table explicitly states PEB is \"not recommended in most applications\" and does not list a rehydration-hold step at all — contrary to what might be assumed for a thick resist, this document gives no basis to include one. Edge-bead removal is documented as an explicit spin-rinse/spin-dry step (500 rpm/10s rinse, 1000 rpm/10s dry) built directly into the same process table as coat, softbake, exposure, and develop. The document states AZ 9200 is sensitive to both h- and i-line light, but only broadband exposure data (900 mJ/cm² nominal) is actually published for the 4.6 µm/AZ 9245 process specifically — the datasheet's only i-line dose data belongs to the thicker AZ 9260 (10 µm) grade and is not reused here. This document predates and differs structurally from the Merck-branded AZ datasheets processed alongside it (no explicit tone/chemistry statement, no HMDS guidance), so it states no tone or base chemistry for this grade.", "developerFamily": "buffered-alkaline", "references": [ { "type": "paper", "title": "Optimal overlayer inspired by Photuris firefly improves light-extraction efficiency of existing light-emitting diodes", "authors": "Bay et al.", "journal": "Optics Express", "year": 2013, "doi": "10.1364/OE.21.00A179", "url": "https://doi.org/10.1364/OE.21.00A179", "accessedDate": "2026-07-16", "summary": "A firefly-inspired factory-roof relief was built in AZ 9245 on a GaN LED by direct-writing laser lithography on a Heidelberg DWL 66 photoplotter, using power-modulated multi-step writing to produce a three-dimensional profile that raised light extraction." } ], "provenance": { "datasheetUrl": "https://www.nanofab.utah.edu/wp-content/uploads/2022/12/AZ-9260-Thick-Positive-Photoresist-Spec-Sheet-2-1.pdf", "datasheetVersionOrDate": "July 1997 (per copyright line \"© Clariant AG, July 1997\"; no separate \"Rev.\" string is printed, unlike the Merck-era AZ documents processed alongside this one)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-9260", "name": "AZ 9260", "min_um": 7.9, "max_um": 11.4, "doseBasis": "1500 mJ/cm²" } ], "humanVerified": false }, { "slug": "az-9260", "name": "AZ 9260", "manufacturer": "MicroChemicals GmbH / Merck KGaA (AZ brand; originally launched by Clariant / AZ Electronic Materials)", "productLine": "AZ 9200 series", "aliases": [ "AZ9260", "AZ 9260 Photoresist", "AZ 9200 Photoresist (520 cP grade)" ], "tone": "positive", "chemistry": "dnq-novolak", "grayscaleSuitable": false, "grayscaleNote": "Not addressed in any source consulted; the datasheet frames AZ 9260 purely as a high-resolution thick binary resist (etch mask / plating mold), with no grayscale dose-response or reflow data given.", "status": "active", "successorSlug": null, "summary": "AZ 9260 is the high-viscosity (520 cP) grade of the AZ 9200 thick positive photoresist family — the thicker partner to AZ 9245, spin-coating roughly 7.9–11.4 µm single-coat (up to 24 µm double-coat) for plating molds, etch masks and careful lift-off.", "thicknessRange": { "min_um": 7.9, "max_um": 11.4, "basis": "curve-span", "source": "curve-span: the AZ 9200 datasheet states no AZ 9260-specific achievable range — its intro figure \"film thicknesses of 4 to 24 µm\" (p.1) is for the two-grade AZ 9200 series (AZ 9245 + AZ 9260) combined, the same series-vs-grade case for which the sibling grade AZ 9245 also uses curve-span. min/max are the span of AZ 9260's own published \"Film Thickness\" table (p.7, 520 cP row: 11.4/9.6/8.8/7.9 µm at 2000/2500/3000/3500 rpm). The document's \"10 µm\" process (p.6) is one demonstrated single-coat point and its \"24 µm\" process is an explicit double coat, so neither is a stated single-coat achievable range. [CORRECTED: the prior 5-20 µm was sourced from neither the prose nor the curve.]" }, "spinCurves": [ { "label": "AZ 9260 Photoresist (520 cP)", "points": [ { "rpm": 2000, "um": 11.4 }, { "rpm": 2500, "um": 9.6 }, { "rpm": 3000, "um": 8.8 }, { "rpm": 3500, "um": 7.9 } ], "source": "numeric table, 'Film Thickness' row for AZ 9260 Photoresist 520 cP, Thermal Comparison section, p.7 of AZ 9200 Photoresist -- High-Resolution Thick Resist Product Data Sheet (Clariant / AZ Electronic Materials, copyright 1997). Only 4 points are published (2000-3500 rpm); the datasheet does not plot or tabulate points below 2000 or above 3500 rpm for this grade. Cross-check: interpolating this table to 2400 rpm gives ~10.0 um, matching the same document's separately-stated 'Typical Process for 10 um Film Thickness' recipe (2400 rpm), which is a useful internal consistency check." } ], "spinNotes": "Coat by dispense (static or dynamic) at 300 rpm. Kayaku-equivalent 'Typical Process' recipes from the same datasheet: for a single-coat ~10 um film, spin at 2400 rpm for 60 s; for a double-coat ~24 um stack, first coat at 2400 rpm/60 s (target ~10 um) then a second coat at 2100 rpm/60 s (target 24 um total), with an intermediate softbake between coats. Edge-bead removal in all cases: rinse at 500 rpm for 10 s, then dry-spin at 1000 rpm for 10 s. Post-develop rinse/dry: 300 rpm for 20 s rinse, then 4000 rpm for 15 s dry. Separately, current MicroChemicals process guidance (app-note level, not the 1997 datasheet) recommends spinning highly-viscous resists such as AZ 9260 at an elevated spin speed to suppress edge-bead formation, and notes that at conventional 3000-4000 rpm speeds AZ 9260 reaches roughly 7 um in about 20 s.", "adhesion": { "hmds": false, "notes": "Not specifically addressed for AZ 9260 in the AZ 9200 datasheet (no HMDS step appears in any of its 'Typical Process' recipes). General MicroChemicals adhesion guidance (not resist-specific) recommends applying HMDS only from the vapour phase onto heated substrates, never from the liquid phase or in a spin coater also used for resist -- excess liquid-phase HMDS can release ammonia during softbake that crosslinks/scums the substrate-near resist. On noble metals (Ag, Au) organic promoters like HMDS are noted to be largely ineffective; a thin Ti or Cr adhesion layer is recommended instead." }, "rehydration": "AZ 9260 is explicitly used as the worked example in MicroChemicals' 'Rehydration of Photoresists' application note: a 22 um AZ 9260 film softbaked at 100 C for 20 minutes needed roughly 30 minutes of rehydration at 52% RH / 22 C to reach a stable, high development rate throughout the film thickness. With only 5 minutes of rehydration under the same conditions, the substrate-near resist stayed water-depleted and developed at a much lower rate, requiring an order-of-magnitude longer development time for full through-development and giving a worse resist profile (more dark erosion near the top of developed structures). General rule from the same source: required rehydration time increases from about 1 minute for a 1 um film to several hours for films beyond 30 um, and a high air humidity (roughly 45-50%, never below ~40%) is required in addition to time -- a low-humidity environment cannot be compensated for by waiting longer.", "softbake": { "temp_c": 110, "time_s": 165, "method": "hotplate", "notes": "165 s is the value for a single-coat 10 um target film (the closest standard 'Typical Process' entry to AZ 9260's nominal single-coat use). Related published points from the same document: 120 s at 110 C for a 4.6 um AZ 9245 (220 cP) film, and for a double-coat 24 um AZ 9260 stack, 80 s at 110 C after the first (~10 um) coat plus 160 s at 110 C after the second coat. Separately, MicroChemicals' general (non-resist-specific) rule of thumb for AZ/TI positive resists is ~100 C for 1 minute per micron of film thickness, but the vendor's own AZ 9260-specific numbers above deviate from that generic rule, which the same source explicitly anticipates for 'special thick resists' -- use the datasheet numbers, not the generic rule, for AZ 9260.", "source": "'Typical Process for 10 um Film Thickness [AZ 9260 Photoresist (520 CPS)]' table, p.6 of AZ 9200 Photoresist Product Data Sheet (Clariant / AZ Electronic Materials, 1997); softbake rule-of-thumb cross-reference from MicroChemicals 'Basics of Microstructuring' application note (undated, current)" }, "exposureDose": { "doses": [ { "wavelength_nm": null, "value_mJcm2": 1500, "source": "'Typical Process for 10 um Film Thickness' table (p.6) and 'Focus and Exposure Latitude [i-Line]' section (p.5), AZ 9200 Photoresist Product Data Sheet, Clariant / AZ Electronic Materials, 1997" } ], "basisCopy": "1500 mJ/cm² broadband is the 10 µm single-coat dose and 2100 mJ/cm² the 24 µm double coat; on an i-line stepper the same 10 µm film resolved 3 µm lines between 660 and 900 mJ/cm²." }, "peb": { "temp_c": null, "time_s": null, "notes": "Post exposure bake is explicitly listed as 'not recommended in most applications' in every one of the datasheet's Typical Process tables (4.6 um, 10 um, and 24 um double-coat processes). This is consistent with AZ 9260 being a standard DNQ-novolak positive resist (not chemically amplified), which does not require a PEB the way SU-8 or AZ 40XT do.", "source": "'Typical Process' tables, p.6 of AZ 9200 Photoresist Product Data Sheet, Clariant / AZ Electronic Materials, 1997" }, "floodExposure": { "dose_mJcm2": null, "notes": null, "source": null }, "develop": { "developer": "AZ 400K Developer (buffered, KOH-based)", "dilution": "1:4", "time_s": 180, "method": "spray, dispense temperature 27 C (immersion is also usable per current MicroChemicals guidance)", "rinse": "300 rpm spin rinse for 20 s, then 4000 rpm spin-dry for 15 s (from the 10 um single-coat 'Typical Process')", "source": "'Typical Process for 10 um Film Thickness [AZ 9260 Photoresist (520 CPS)]' table, p.6 of AZ 9200 Photoresist Product Data Sheet, Clariant / AZ Electronic Materials, 1997. Related published points: 120 s spray for a 4.6 um AZ 9245 film; 260 s spray for a 24 um double-coat AZ 9260 stack. Current MicroChemicals compatibility guidance (application-notes level) also lists AZ 326 MIF and AZ 726 MIF (both TMAH-based, metal-ion-free) as compatible developers for AZ 9260, and the original 1997 datasheet separately notes AZ 300 MIF (a TMAH developer) can be used for IC applications requiring metal-ion-free processing." }, "hardbake": { "temp_c": null, "time_s": null, "notes": "No AZ 9260-specific hardbake step or numbers are given in the AZ 9200 datasheet itself (its own thermal-stability test instead shows the resist beginning to round/flow at 110-125 C, i.e. its softening point, not a recommended cure). General (non-resist-specific) MicroChemicals guidance elsewhere recommends a post-development hardbake at approximately 140-150 C for 5-10 minutes to improve wet-etch and alkaline-solution resistance and reduce underetching, and separately notes that positive/image-reversal AZ resists generally begin to round/reflow above their 110-130 C softening point during any subsequent thermal process (e.g. dry etch, evaporation/sputtering), which limits how hot a true 'hard' cure step can go without deforming the profile.", "source": "Thermal Comparison section, p.7 of AZ 9200 Photoresist Product Data Sheet, Clariant / AZ Electronic Materials, 1997 (softening behavior only); general hardbake/etch-resistance guidance from MicroChemicals 'Basics of Microstructuring' application note (undated, current) -- not AZ 9260-specific" }, "descum": null, "applications": [ "electroplating-molding", "etch-mask", "lift-off", "high-aspect-ratio" ], "etchResistance": "The datasheet does not give wet/dry etch-rate numbers for AZ 9260 directly. Related published facts: the resist begins to round/soften starting around 110-125 C (its softening point), which is also the temperature ceiling for most dry-etch and coating processes before profile rounding occurs; current MicroChemicals guidance states cresol-novolak-based AZ resists (which includes AZ 9260) are never stable enough for KOH/TMAH-based anisotropic silicon etching regardless of hardbake, and that a hardbake around 140-150 C improves resistance to HNO3-containing wet etchants and reduces underetching from marginal adhesion.", "liftoffSuitable": true, "platingSuitable": true, "stripper": "Per the 1997 AZ 9200 datasheet: AZ 400T and AZ 300T strippers are recommended for AZ 9200-family resists; AZ S-46 (a non-NMP solvent stripper) is specifically suited to thin-film recording-head applications. Current MicroChemicals-branded equivalents for Novolak-based positive resists like AZ 9260: AZ 100 Remover (amine solvent mixture, can be heated 60-80 C, but must be kept water-free on Cu/Al/ITO-bearing substrates), or the high-performance strippers TechniStrip P1316 (or P1331 as an alkaline-sensitive-material alternative) for cross-linked/hardbaked material.", "storage": "Per the 1997 datasheet: keep in the sealed original container, protected from light and heat; store between 30-70 F (-1 to 24 C); refrigeration is recommended and may extend shelf life.", "notes": "AZ 9260 is the 520 cP (higher-viscosity) grade of the AZ 9200 family, paired with the 220 cP AZ 9245 grade; it is one of the resists MicroChemicals specifically recommends when thick-film bubbling or cracking is a problem, because it has a lower photo-active-compound (PAC) concentration than most positive resists and therefore generates less N2 gas during exposure -- the N2 that IS generated still needs to diffuse out before it forms visible bubbles or stress-cracks, so thick coats, high exposure intensity, and inadequate softbake all raise bubbling risk; work-arounds given by the vendor include lowering exposure intensity (splitting exposure into steps with delays between them), increasing softbake time/temperature, and improving substrate adhesion. Separately, and just as important for thick coats: AZ 9260 needs real rehydration time after softbake before exposure (tens of minutes at 40-50% RH for a >20 um film per MicroChemicals' own study) or the substrate-near resist develops far too slowly and the profile suffers -- this is easy to overlook since PEB (a separate bake step) is explicitly NOT needed for this resist. Exposure dose also scales with target thickness rather than holding constant: the datasheet's own worked processes run roughly 900 mJ/cm2 (broadband) for a thin ~4.6 um coat, ~1500 mJ/cm2 for the 10 um single-coat target, and ~2100 mJ/cm2 for the 24 um double-coat stack, so a dose calibrated for one thickness should be re-benchmarked before reuse at another. Handling note from MicroChemicals' general troubleshooting guide: N2 can also form inside an unopened resist bottle over time from slow PAC decomposition, so a bottle that has been closed for a while (or recently shaken/moved) should be left to stand for 1-2 hours (longer for very viscous resists) before dispensing, to let bubbles rise out.", "developerFamily": "buffered-alkaline", "references": [ { "type": "paper", "title": "Potentialities of a new positive photoresist for the realization of thick moulds", "authors": "Conédéra et al.", "journal": "Journal of Micromechanics and Microengineering", "year": 1999, "doi": "10.1088/0960-1317/9/2/317", "url": "https://doi.org/10.1088/0960-1317/9/2/317", "accessedDate": "2026-07-15", "summary": "The founding AZ 9260 mold paper: aspect ratio 15-20 at 100 µm on a standard aligner" }, { "type": "paper", "title": "Thin film micro-transformers for future power conversion", "authors": "O'Donnell et al.", "journal": "Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04.", "year": 2004, "doi": "10.1109/APEC.2004.1295935", "url": "https://doi.org/10.1109/APEC.2004.1295935", "accessedDate": "2026-07-15", "summary": "81 µm molds used for on-chip power micro-transformers, Q ~23 at 0.4 GHz" } ], "troubleshooting": [ { "q": "Why does AZ 9260 need a rehydration wait before exposure?", "a": "After softbake the resist is water-depleted, and water must diffuse back in to complete the photoreaction. In MicroChemicals' worked study a 22 µm AZ 9260 film softbaked at 100°C for 20 min needed about 30 min of rehydration at 52% RH / 22°C; with only 5 min the substrate-near resist developed far slower and gave a worse profile. Required time rises from ~1 min at 1 µm to several hours beyond 30 µm, and needs 45–50% RH — dry air cannot be offset by waiting longer.", "source": "MicroChemicals 'Rehydration of Photoresists' application note (2007), the AZ 9260 worked example; AZ 9200 Photoresist Product Data Sheet (Clariant / AZ Electronic Materials, 1997)" }, { "q": "Does AZ 9260 need a post-exposure bake?", "a": "No. Post-exposure bake is listed as 'not recommended in most applications' in every one of the datasheet's Typical Process tables (the 4.6 µm, 10 µm and 24 µm double-coat processes). That is consistent with AZ 9260 being a standard DNQ-novolak positive resist rather than a chemically amplified one — it does not need a PEB the way SU-8 or AZ 40XT do.", "source": "AZ 9200 Photoresist Product Data Sheet (Clariant / AZ Electronic Materials, 1997) — Typical Process tables, p.6" }, { "q": "Does the exposure dose for AZ 9260 change with film thickness?", "a": "Yes — dose scales with target thickness rather than holding constant. The datasheet's worked processes run about 900 mJ/cm² (broadband) for a ~4.6 µm coat, ~1500 mJ/cm² for the 10 µm single-coat target, and ~2100 mJ/cm² for the 24 µm double-coat stack, so a dose calibrated at one thickness should be re-benchmarked at another. An i-line stepper is more efficient — 660–900 mJ/cm² resolved 3 µm lines/spaces in a 10 µm film.", "source": "AZ 9200 Photoresist Product Data Sheet (Clariant / AZ Electronic Materials, 1997) — Typical Process tables + Focus and Exposure Latitude [i-Line], p.5–6" }, { "q": "How do I avoid bubbling or cracking in thick AZ 9260 coats?", "a": "AZ 9260 has a lower photoactive-compound concentration than most positive resists, so it generates less N2 during exposure — but that N2 still must diffuse out before it forms bubbles or stress cracks, and thick coats, high exposure intensity and weak softbake all raise the risk. Mitigate by lowering exposure intensity (split exposure into timed steps), increasing softbake time/temperature, and improving adhesion. Let a closed or recently shaken bottle stand 1–2 h before dispensing so bubbles rise out.", "source": "MicroChemicals lithography troubleshooting / 'Basics of Microstructuring' application note (current); AZ 9200 Photoresist Product Data Sheet (Clariant / AZ Electronic Materials, 1997)" } ], "provenance": { "datasheetUrl": "https://www.nanofab.utah.edu/wp-content/uploads/2022/12/AZ-9260-Thick-Positive-Photoresist-Spec-Sheet-2-1.pdf", "datasheetVersionOrDate": "AZ 9200 Photoresist -- High-Resolution Thick Resist, Product Data Sheet, Clariant AG / AZ Electronic Materials, copyright July 1997 (accessed via a University of Utah Nanofab-hosted mirror of the original vendor PDF; the current commercial custodian of the AZ brand, MicroChemicals GmbH / Merck KGaA, does not appear to host this specific legacy datasheet on microchemicals.com, which returned a 404 for the AZ 9260/9200 filename pattern used by its other current photoresist TDS files during this session)", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.microchemicals.com/dokumente/application_notes/lithography_trouble_shooting.pdf", "what": "MicroChemicals GmbH 'Basics of Microstructuring' / lithography troubleshooting application note (current, undated) -- manufacturer-authored, not university content, but used here only for general (non-AZ-9260-specific) guidance: N2-bubble/cracking mechanism and mitigations for thick DNQ resists, generic softbake rule-of-thumb, generic hardbake/etch-resistance guidance, developer compatibility table listing AZ 9260's compatible developers, and lift-off suitability of positive resists including AZ 9260." }, { "url": "https://research.engineering.ucdavis.edu/cnm2/wp-content/uploads/sites/11/2014/07/photoresist_rehydration.pdf", "what": "MicroChemicals GmbH 'Rehydration of Photoresists' application note (2007-02-26, authored by Dr. Christian Koch of MicroChemicals), mirrored by UC Davis' cleanroom facility -- manufacturer-authored, not university-derived content, and used as the primary source for the AZ-9260-specific 22 um rehydration study numbers quoted in the rehydration field above." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-9245", "name": "AZ 9245", "min_um": 4.6, "max_um": 6.6, "doseBasis": "900 mJ/cm²" } ], "humanVerified": false }, { "slug": "az-eci-3007", "name": "AZ ECI 3007", "manufacturer": "Merck", "productLine": "AZ ECI 3000 series", "aliases": [ "ECI 3007", "AZ ECI 3007" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed anywhere in the datasheet; the series is positioned as a general-purpose, high-throughput plasma/RIE and wet-etch resist, not for grayscale/3D lithography.", "status": "active", "successorSlug": null, "summary": "AZ ECI 3007 is the thinnest of three grades in Merck's AZ ECI 3000 series of general-purpose, high-throughput positive-tone cross-over (i-line/g-line) photoresists for plasma/RIE and wet-etch applications, spin-coating to roughly 0.6-1.15 µm across the datasheet's 1500-5000 rpm plotted range.", "thicknessRange": { "min_um": 0.6, "max_um": 1.15, "basis": "curve-span", "source": "curve-span — read from the plotted spin curve (\"SPIN CURVES (150mm Wafers)\", p.1), min at 5000 rpm and max at 1500 rpm, the full plotted range. The series-wide stated figure in APPLICATION (p.1), \"Spin coated thickness from 0.7 to 5.0µm\", spans all three ECI 3000 grades (3007/3012/3027) combined, not ECI 3007 alone, so this grade's own curve-span is used instead." }, "spinCurves": [ { "label": "AZ ECI 3007", "points": [ { "rpm": 1500, "um": 1.15 }, { "rpm": 2000, "um": 0.95 }, { "rpm": 3000, "um": 0.75 }, { "rpm": 4000, "um": 0.65 }, { "rpm": 5000, "um": 0.6 } ], "source": "read from figure (\"SPIN CURVES (150mm Wafers)\"), p.1 of AZ ECI 3000 Series datasheet — legend-labeled \"ECI 3007\" (blue circle marker), clearly separated (~2x factor) from the ECI 3012 and ECI 3027 traces across the full 1500-5000 rpm plotted range.", "figureRead": true } ], "spinNotes": "Multi-grade chart plots ECI 3007 / ECI 3012 / ECI 3027 together (legend, distinct colors, p.1); unlike some other multi-grade AZ charts, the three traces stay well-separated (roughly 2x factor between adjacent grades) across the whole 1500-5000 rpm range, so the ECI 3007 trace could be identified with reasonable confidence — but the reading is still a visual estimate from a plotted curve, not a printed numeric table, and no point is extrapolated past the 1500-5000 rpm plotted range. No spin accel/dispense parameters, no edge-bead removal procedure, and no rehydration hold are published for this grade; AZ EBR Solvent/AZ EBR 70/30 are listed only as companion thinning/edge-bead products (COMPANION PRODUCTS, p.2) with no protocol given. Rehydration is not applicable — this is a thin film (<1.2 µm), not a thick-DNQ resist.", "adhesion": { "hmds": true, "notes": "\"Oxide forming substrates (Si, etc.) should be primed with HMDS (hexamethyl disilazane) or other suitable primer prior to coating AZ ECI 3000.\" (SUBSTRATE PREPARATION, p.10). No specific HMDS bake temp/time is published." }, "rehydration": null, "softbake": { "temp_c": null, "tempRange_c": { "min": 90, "max": 110 }, "time_s": 60, "method": null, "notes": "Soft bake is 90-110°C for 60 s; the higher end of the range improves adhesion to metals. Bakes may be run on a hotplate or in a vented bake oven — neither is named as the default. No ECI 3007-specific process is published (the worked reference processes cover ECI 3012 and ECI 3027), so these are the conditions given for the ECI 3000 series as a whole.", "source": "TYPICAL PROCESS, p.1; SOFT BAKE, p.10 of AZ ECI 3000 Series datasheet." }, "exposureDose": { "doses": [], "basisCopy": "The only exposure data for ECI 3007 is an i-line dose-to-clear curve that swings between roughly 40 and 70 mJ/cm² as film thickness changes — a thin-film interference effect, and a clearing dose rather than a process dose." }, "peb": { "temp_c": 110, "time_s": null, "timeRange_s": { "min": 60, "max": 90 }, "notes": "Series-wide Typical Process line: \"Post Expose Bake: 110°C/60-90s\" — temperature is a single stated value, time is a range. PEB is described elsewhere (PROCESS CONSIDERATIONS, p.10) as optional (\"may be employed to maximize process latitudes and mitigate standing wave effects\").", "source": "TYPICAL PROCESS, p.1 of AZ ECI 3000 Series datasheet." }, "floodExposure": null, "develop": { "developer": null, "dilution": null, "time_s": 60, "method": null, "rinse": null, "source": "TYPICAL PROCESS, p.1; DEVELOPERS list, COMPANION PRODUCTS, p.2 of AZ ECI 3000 Series datasheet." }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 100, "max": 115 }, "time_s": null, "notes": "Series-wide range only: \"Hard bake temperatures should be in the 100° to 115°C range to ensure minimal thermal distortion of the pattern.\" No time is published. Improves adhesion in wet-etch/plating applications and pattern stability in dry-etch processes.", "source": "HARD BAKE, p.10 of AZ ECI 3000 Series datasheet." }, "descum": null, "applications": [ "etch-mask", "electroplating-molding" ], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ 100 Remover, AZ 300T, AZ 400T, or AZ Kwik Strip™ (STRIPPING, p.10): \"AZ ECI 3000 strips readily in removers designed for DNQ/novolac type photoresists.\" Patterns baked above 140°C may cross-link and become harder to strip.", "storage": null, "notes": "AZ ECI 3007 is a general-purpose, i-line/g-line cross-over positive resist for thin (0.6-1.15 µm), high-throughput plasma/RIE and wet-etch masking — the thinnest of three grades (3007/3012/3027) in Merck's AZ ECI 3000 series, sharing chemistry, developer compatibility, and process temperature windows with its siblings. The datasheet resolves no grade-specific reference process for ECI 3007 itself — every worked exposure/PEB/develop example is built around ECI 3012 or ECI 3027 instead — so soft bake, PEB, and develop here fall back to the series-wide Typical Process line rather than a grade-specific table. The only ECI 3007-specific exposure data is a thin-film-interference (dose-to-clear swing) curve (p.6), which is a physical clearing-dose artifact, not a stated process dose; treat the series' 365-436 nm exposure window as a starting point and run a dose array rather than expect a single vendor number. Like the rest of the series it is a DNQ/novolac positive resist compatible with both TMAH (MIF) and inorganic developers, stripping in standard DNQ/novolac removers, with wet-etch and plating adhesion called out as target applications.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Aperture-Controlled Fabrication of All-Dielectric Structural Color Pixels", "authors": "Lipp et al.", "journal": "ACS Applied Materials & Interfaces", "year": 2023, "doi": "10.1021/acsami.3c03353", "url": "https://doi.org/10.1021/acsami.3c03353", "accessedDate": "2026-07-15", "summary": "750 nm ECI 3007 patterned on a maskless writer to tune structural color" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_eci_3000_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-eci-3012", "name": "AZ ECI 3012", "min_um": 1.05, "max_um": 1.9, "doseBasis": "220 mJ/cm² @ 436 nm" }, { "slug": "az-eci-3027", "name": "AZ ECI 3027", "min_um": 2.4, "max_um": 4.4, "doseBasis": "262 mJ/cm² @ 365 nm" } ], "humanVerified": false }, { "slug": "az-eci-3012", "name": "AZ ECI 3012", "manufacturer": "Merck", "productLine": "AZ ECI 3000 series", "aliases": [ "ECI 3012", "AZ ECI 3012" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed anywhere in the datasheet; the series is positioned as a general-purpose, high-throughput plasma/RIE and wet-etch resist, not for grayscale/3D lithography.", "status": "active", "successorSlug": null, "summary": "AZ ECI 3012 is the middle grade in Merck's AZ ECI 3000 series of general-purpose, high-throughput positive-tone cross-over (i-line/g-line) photoresists, and the best-documented grade in this datasheet — dedicated i-line and g-line reference processes, wet-etch adhesion data on ITO and thermal oxide, and PROLITH modeling parameters.", "thicknessRange": { "min_um": 1.05, "max_um": 1.9, "basis": "curve-span", "source": "curve-span — read from the plotted spin curve (\"SPIN CURVES (150mm Wafers)\", p.1), min at 5000 rpm and max at 1500 rpm, the full plotted range. The series-wide stated figure in APPLICATION (p.1), \"Spin coated thickness from 0.7 to 5.0µm\", spans all three ECI 3000 grades (3007/3012/3027) combined, not ECI 3012 alone, so this grade's own curve-span is used instead. (Note: reference-process coat thicknesses of 1.20/1.2/1.7/1.33 µm appear on p.3-8 for various test structures, but none are paired with a spin speed, so they cannot be folded into this range.)" }, "spinCurves": [ { "label": "AZ ECI 3012", "points": [ { "rpm": 1500, "um": 1.9 }, { "rpm": 2000, "um": 1.6 }, { "rpm": 3000, "um": 1.3 }, { "rpm": 4000, "um": 1.15 }, { "rpm": 5000, "um": 1.05 } ], "source": "read from figure (\"SPIN CURVES (150mm Wafers)\"), p.1 of AZ ECI 3000 Series datasheet — legend-labeled \"ECI 3012\" (red/pink circle marker), clearly separated (~2x factor) from the ECI 3007 and ECI 3027 traces across the full 1500-5000 rpm plotted range.", "figureRead": true } ], "spinNotes": "Multi-grade chart plots ECI 3007 / ECI 3012 / ECI 3027 together (legend, distinct colors, p.1); unlike some other multi-grade AZ charts, the three traces stay well-separated (roughly 2x factor between adjacent grades) across the whole 1500-5000 rpm range, so the ECI 3012 trace could be identified with reasonable confidence — but the reading is still a visual estimate from a plotted curve, not a printed numeric table, and no point is extrapolated past the 1500-5000 rpm plotted range. No spin accel/dispense parameters, no edge-bead removal procedure, and no rehydration hold are published for this grade; AZ EBR Solvent/AZ EBR 70/30 are listed only as companion thinning/edge-bead products (COMPANION PRODUCTS, p.2) with no protocol given. Rehydration is not applicable — this is a thin film (<2 µm), not a thick-DNQ resist.", "adhesion": { "hmds": true, "notes": "\"Oxide forming substrates (Si, etc.) should be primed with HMDS (hexamethyl disilazane) or other suitable primer prior to coating AZ ECI 3000.\" (SUBSTRATE PREPARATION, p.10). The oxide-etch wet-etch adhesion test (p.8) explicitly used \"Primer: HMDS vapor\"." }, "rehydration": null, "softbake": { "temp_c": 90, "time_s": 90, "method": "hotplate", "notes": "Both grade-specific reference processes agree: \"Soft Bake: 90°C, 90 seconds, proximity hotplate\" — used for the i-line reference process (p.3) and repeated verbatim for the g-line reference process (p.5). A third reference process (Broadband Mask Aligner, p.7) uses a different condition: \"90°C, 60 seconds, contact hotplate\" for that specific tool setup — not used here since the two i-line/g-line stepper references agree with each other and are the primary documented process.", "source": "REFERENCE PROCESS tables, p.3 and p.5 of AZ ECI 3000 Series datasheet." }, "exposureDose": { "doses": [ { "wavelength_nm": 436, "value_mJcm2": 220, "source": "REFERENCE PROCESS (Dense lines and holes in AZ ECI 3012 Photoresist), p.3; REFERENCE PROCESS (Dense lines in AZ ECI 3012 Photoresist, g-line exposure), p.5 of AZ ECI 3000 Series datasheet." } ], "basisCopy": "220 mJ/cm² is the g-line nominal. On i-line the grade has no single figure: 110 mJ/cm² is quoted for dense lines, 136 mJ/cm² for dense holes — the feature type decides which applies." }, "peb": { "temp_c": 110, "time_s": null, "notes": "Both grade-specific reference processes agree on temperature (110°C) but differ on time and hotplate type by exposure wavelength: the i-line reference process (p.3) uses 60 seconds on a direct-contact hotplate; the g-line reference process (p.5) uses 90 seconds on a proximity hotplate. The two are not interchangeable — use the pairing that matches the intended exposure wavelength/tool.", "source": "REFERENCE PROCESS tables, p.3 and p.5 of AZ ECI 3000 Series datasheet." }, "floodExposure": null, "develop": { "developer": "AZ 300MIF", "dilution": "used as supplied (ready-to-use MIF developer)", "time_s": 60, "method": "puddle", "rinse": null, "source": "REFERENCE PROCESS tables, p.3, p.5, p.7 and WET ETCH ADHESION CHARACTERISTICS, p.8 of AZ ECI 3000 Series datasheet." }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 100, "max": 115 }, "time_s": null, "notes": "Series-wide range only: \"Hard bake temperatures should be in the 100° to 115°C range to ensure minimal thermal distortion of the pattern.\" No time is published. Improves adhesion in wet-etch/plating applications and pattern stability in dry-etch processes.", "source": "HARD BAKE, p.10 of AZ ECI 3000 Series datasheet." }, "descum": null, "applications": [ "etch-mask", "electroplating-molding" ], "etchResistance": "Wet-etch adhesion data (p.8) shows AZ ECI 3012 surviving a 70s FeCl3/HCl ITO etch at 45°C (200nm ITO film) and a 6-minute thermal-oxide etch at 22°C, with acceptable pattern retention in the accompanying SEM cross-sections (8.0µm/6.0µm lines post-ITO-etch; 100µm pad edge and 7.0µm lines post-oxide-etch). No numeric etch rate or resist:film selectivity ratio is published.", "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ 100 Remover, AZ 300T, AZ 400T, or AZ Kwik Strip™ (STRIPPING, p.10): \"AZ ECI 3000 strips readily in removers designed for DNQ/novolac type photoresists.\" Patterns baked above 140°C may cross-link and become harder to remove.", "storage": null, "notes": "AZ ECI 3012 is the middle grade in Merck's AZ ECI 3000 cross-over series and the best-documented grade in this datasheet, with dedicated i-line (110/136 mJ/cm² nominal for dense lines/holes respectively) and g-line (220 mJ/cm² nominal) reference processes, PROLITH Dill and development-rate parameters, and demonstrated wet-etch adhesion on ITO (FeCl3/HCl, 70s) and thermal oxide (6 min). Its two documented PEB conditions differ by exposure wavelength (60s on a direct-contact hotplate for i-line vs. 90s on a proximity hotplate for g-line, both at 110°C), so the two are not interchangeable — pick the pairing matching the intended exposure tool. The i-line reference dose is itself split between two feature targets (110 mJ/cm² for lines, 136 mJ/cm² for holes) rather than one nominal number. Like the rest of the series it is a DNQ/novolac positive resist compatible with both TMAH (MIF, AZ 300MIF used throughout every reference process for this grade) and inorganic developers, stripping in standard DNQ/novolac removers.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET", "authors": "Lale et al.", "journal": "Proceedings", "year": 2017, "doi": "10.3390/proceedings1040419", "url": "https://doi.org/10.3390/proceedings1040419", "accessedDate": "2026-07-16", "summary": "Projection photolithography on a Canon FPA-3000i4 i-line stepper with AZ ECI 3012 defined the silicon nanowires (single wire up to 100-wire parallel networks) later transferred into silicon by RIE for suspended gate-all-around ChemFET pH sensors.", "note": "Conference proceedings paper (Eurosensors 2017), not a full journal article." }, { "type": "paper", "title": "Aperture-Controlled Fabrication of All-Dielectric Structural Color Pixels", "authors": "Lipp et al.", "journal": "ACS Applied Materials & Interfaces", "year": 2023, "doi": "10.1021/acsami.3c03353", "url": "https://doi.org/10.1021/acsami.3c03353", "accessedDate": "2026-07-16", "summary": "A 750 nm AZ ECI 3007 film was patterned on a maskless writer to control aperture geometry and tune all-dielectric structural colour.", "note": "Family-level citation: this paper used AZ ECI 3007, not AZ ECI 3012. Cited as evidence that the AZ ECI 3000 series images well on a maskless direct-write tool; the 750 nm film thickness and its doses are 3007's and do not carry over to this grade." } ], "troubleshooting": [ { "q": "What exposure dose does AZ ECI 3012 need at i-line versus g-line?", "a": "The i-line reference process gives a 110–136 mJ/cm² nominal window on a 0.54 NA Nikon stepper — 110 mJ/cm² for dense lines and 136 mJ/cm² for dense holes — so there is no single i-line number; pick the value matching your feature type. The g-line reference process gives one unambiguous nominal, 220 mJ/cm². No h-line (405 nm) dose is published anywhere in the document.", "source": "Merck AZ ECI 3000 Series datasheet (Rev. 03/21) — Reference Process tables, p.3 and p.5" }, { "q": "Why does AZ ECI 3012's PEB differ between i-line and g-line exposure?", "a": "Both grade-specific reference processes run PEB at 110°C but differ in time and hotplate type by exposure wavelength: the i-line process uses 60 s on a direct-contact hotplate, the g-line process 90 s on a proximity hotplate. The datasheet leaves PEB time unmerged for exactly this reason — use the pairing that matches your intended exposure tool rather than averaging the two.", "source": "Merck AZ ECI 3000 Series datasheet (Rev. 03/21) — Reference Process tables, p.3 and p.5" }, { "q": "What softbake does AZ ECI 3012 use?", "a": "90°C for 90 s on a proximity hotplate — identical in both the i-line and g-line stepper reference processes, which is why it is the documented default. A separate broadband mask-aligner reference process instead uses 90°C for 60 s on a contact hotplate for that specific tool setup.", "source": "Merck AZ ECI 3000 Series datasheet (Rev. 03/21) — Reference Process tables, p.3, p.5, p.7" }, { "q": "Which developer does AZ ECI 3012 use?", "a": "AZ 300MIF used as supplied, 60 s single puddle at 23°C — the most internally consistent value in this datasheet, identical across every reference process for the grade (i-line, g-line, broadband aligner, and both wet-etch adhesion tests). It is a DNQ/novolac positive resist compatible with both TMAH (MIF) and inorganic developers.", "source": "Merck AZ ECI 3000 Series datasheet (Rev. 03/21) — Reference Process tables, p.3, p.5, p.7 + Wet Etch Adhesion, p.8" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_eci_3000_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-eci-3007", "name": "AZ ECI 3007", "min_um": 0.6, "max_um": 1.15, "doseBasis": null }, { "slug": "az-eci-3027", "name": "AZ ECI 3027", "min_um": 2.4, "max_um": 4.4, "doseBasis": "262 mJ/cm² @ 365 nm" } ], "humanVerified": false }, { "slug": "az-eci-3027", "name": "AZ ECI 3027", "manufacturer": "Merck (AZ Electronic Materials)", "productLine": "AZ ECI 3000 series", "aliases": [ "AZ ECI3027", "ECI 3027", "AZ ECI 3027 Photoresist" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not address grayscale or 3D lithography anywhere; AZ ECI 3000 is marketed as a general-purpose, high-throughput cross-over (i-line/g-line) resist for plasma/RIE and wet-etch masking, with all resolution/linearity data framed around binary dense-line and dense-hole patterning.", "status": "active", "successorSlug": null, "summary": "AZ ECI 3027 is the thickest grade in Merck's AZ ECI 3000 series of positive-tone, i-line/g-line cross-over photoresists for plasma/RIE and wet-etch applications, coating to roughly 2.4-4.4 µm and documented in this datasheet with a full reference process at a 2.5 µm film thickness resolving 0.6 µm dense lines.", "thicknessRange": { "min_um": 2.4, "max_um": 4.4, "basis": "curve-span", "source": "curve-span: taken from the min/max of the AZ ECI 3027 curve on the p.1 spin-speed chart (1500-5000 rpm tested). The series-wide prose claim of 'Spin coated thickness from 0.7 to 5.0µm' (p.1, APPLICATION bullets) spans all three grades in the series (ECI 3007 thinnest to ECI 3027 thickest) together, not ECI 3027 alone, so it was not used here. This curve-span is consistent with the REFERENCE PROCESS on p.4, which coats AZ ECI 3027 at 2.5 µm — inside the read range." }, "spinCurves": [ { "label": "AZ ECI 3027 as supplied", "points": [ { "rpm": 1500, "um": 4.4 }, { "rpm": 2000, "um": 3.8 }, { "rpm": 3000, "um": 3.1 }, { "rpm": 4000, "um": 2.7 }, { "rpm": 5000, "um": 2.4 } ], "source": "read from figure, \"SPIN CURVES (150mm Wafers)\" chart, p.1 of AZ ECI 3000 Series Technical Datasheet (Merck, Rev. 03/21); AZ ECI 3027 identified by its purple/violet legend marker (topmost curve), distinct from AZ ECI 3007 (blue, bottom curve) and AZ ECI 3012 (red/magenta, middle curve) plotted on the same axes.", "figureRead": true } ], "spinNotes": "Datasheet does not state spin ramp/acceleration, dispense volume, or static vs dynamic dispense for the spin-curve chart. Spin coating is named as one of several compatible coating methods (spray and roller coating are also mentioned, p.10 COATING) but no method-specific parameters are published beyond that. No edge-bead-removal recipe is given, only that AZ EBR Solvent or AZ EBR 70/30 are the companion EBR products (p.2).", "adhesion": { "hmds": true, "notes": "\"Oxide forming substrates (Si, etc.) should be primed with HMDS (hexamethyl disilazane) or other suitable primer prior to coating AZ ECI 3000. Contact your products representative for detailed information on pre-treating with HMDS.\" Source: SUBSTRATE PREPARATION, p.10. (A p.8 example process for AZ ECI 3012 — a different grade in this series — separately used 'HMDS vapor' as the primer ahead of an oxide-etch adhesion test, consistent with this recommendation, but that example is not AZ ECI 3027-specific.)" }, "rehydration": null, "softbake": { "temp_c": 100, "tempRange_c": { "min": 90, "max": 110 }, "time_s": 60, "method": "hotplate", "notes": "This is the REFERENCE PROCESS condition for AZ ECI 3027 (2.5 µm film on bare Si) on p.4, using a proximity hotplate. The series-wide TYPICAL PROCESS section (p.1) separately states a broader 90-110°C range with a fixed 60 s time for the whole ECI 3000 series (higher end of the range improves adhesion to metals); the AZ ECI 3027-specific reference-process value (100°C) sits inside that range.", "source": "REFERENCE PROCESS (Dense lines in AZ ECI 3027 Photoresist), p.4; TYPICAL PROCESS, p.1" }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 262, "source": "REFERENCE PROCESS (Dense lines in AZ ECI 3027 Photoresist), p.4" } ], "basisCopy": "262 mJ/cm² i-line is the nominal for a 2.5 µm film developed in AZ 726MIF; drop to about 240 mJ/cm² if you develop in AZ 300MIF instead." }, "peb": { "temp_c": 120, "time_s": 60, "notes": "REFERENCE PROCESS condition for AZ ECI 3027 (2.5 µm film), proximity hotplate. The series-wide TYPICAL PROCESS (p.1) separately states 110°C for 60-90s for the whole ECI 3000 series (single temperature value there, but a time range); the AZ ECI 3027-specific reference-process condition (120°C/60s) is recorded here in preference to the generic series line, since it applies to this exact resist and film thickness.", "source": "REFERENCE PROCESS (Dense lines in AZ ECI 3027 Photoresist), p.4; TYPICAL PROCESS, p.1" }, "floodExposure": null, "develop": { "developer": "AZ 726MIF", "dilution": null, "time_s": 60, "method": "puddle", "rinse": null, "source": "REFERENCE PROCESS (Dense lines in AZ ECI 3027 Photoresist), p.4 (\"Develop: AZ 726MIF, 60s single puddle @ 23°C\")" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 100, "max": 115 }, "time_s": null, "notes": "Hard bake temperature should be in the 100-115°C range to minimize thermal pattern distortion; improves adhesion in wet-etch or plating applications and pattern stability in dry etch processes. No time is given, and temperature is stated as a range, not a single value. No AZ ECI 3027-specific hardbake/postbake step is documented — the p.4 REFERENCE PROCESS table for AZ ECI 3027 stops at Develop.", "source": "PROCESS CONSIDERATIONS / HARD BAKE, p.10" }, "descum": null, "applications": [ "etch-mask", "electroplating-molding", "general-prototyping" ], "etchResistance": "Datasheet demonstrates wet-etch adhesion/profile retention for AZ ECI 3012 (a different, thinner grade in the same series, not AZ ECI 3027 specifically) through an ITO etch (FeCl3/HCl, 70s @ 45°C, on a 200nm ITO film) and a thermal-oxide etch (6 min @ 22°C, on a 690nm oxide film), both shown with SEM cross-sections retaining resist profile (WET ETCH ADHESION CHARACTERISTICS, p.8). No etch-resistance data specific to AZ ECI 3027 is published; the series is marketed generally for 'plasma/RIE and wet etching applications' (APPLICATION, p.1).", "liftoffSuitable": null, "platingSuitable": true, "stripper": "AZ 100 Remover, AZ 300T, AZ 400T, or AZ Kwik Strip — removers designed for DNQ/novolac type photoresists. Strip times vary with thermal history; patterns processed above 140°C may cross-link and become harder to strip, and charred resist will not dissolve in solvent-based removers. Source: STRIPPING, p.10.", "storage": null, "notes": "AZ ECI 3027 is the thickest grade in Merck's AZ ECI 3000 series, a general-purpose, high-throughput positive DNQ/novolak cross-over resist explicitly usable at both i-line (365 nm) and g-line (436 nm), marketed for plasma/RIE and wet-etch masking (the DNQ/novolak classification comes directly from the datasheet's own stripper-compatibility statement, p.10). Unlike AZ ECI 3007/3012 (documented elsewhere in this datasheet at ~1.2 µm film with resolution down to 0.4 µm lines/0.5 µm holes), the dedicated AZ ECI 3027 reference process (p.4) is run at 2.5 µm film thickness — 100°C/60s soft bake, i-line exposure at 262 mJ/cm² nominal (0.54NA, 0.6s, Nikon stepper; ~240 mJ/cm² if developing with AZ 300MIF instead of the AZ 726MIF actually used), 120°C/60s PEB, and a 60s AZ 726MIF single-puddle develop at 23°C — and resolves dense lines down to roughly 0.60 µm at that dose, per the p.4 Dense Line Linearity chart. The series-wide 'production resolution to 0.4µm' headline claim (p.1) applies to the thinner grades' reference processes, not to AZ ECI 3027 at its documented 2.5 µm thickness. On the p.1 multi-grade spin-speed chart (ECI 3007/3012/3027 plotted together), the AZ ECI 3027 curve was identified by its distinct purple/violet legend marker as the topmost (thickest) curve; the reported points are a figure read, not a printed table, and warrant a visual QC pass against the source chart. Soft bake, PEB, and hard bake are also given as series-wide ranges (90-110°C, 105-115°C, 100-115°C respectively) in the generic TYPICAL PROCESS/PROCESS CONSIDERATIONS sections — the reference-process values above were preferred where available since they are resist- and thickness-specific.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Aperture-Controlled Fabrication of All-Dielectric Structural Color Pixels", "authors": "Lipp et al.", "journal": "ACS Applied Materials & Interfaces", "year": 2023, "doi": "10.1021/acsami.3c03353", "url": "https://doi.org/10.1021/acsami.3c03353", "accessedDate": "2026-07-16", "summary": "A 750 nm AZ ECI 3007 film was patterned on a maskless writer to control aperture geometry and tune all-dielectric structural colour.", "note": "Family-level citation: this paper used AZ ECI 3007, not AZ ECI 3027. Cited as evidence that the AZ ECI 3000 series images well on a maskless direct-write tool; the 750 nm film thickness and its doses are 3007's and do not carry over to this grade." } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_eci_3000_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-eci-3007", "name": "AZ ECI 3007", "min_um": 0.6, "max_um": 1.15, "doseBasis": null }, { "slug": "az-eci-3012", "name": "AZ ECI 3012", "min_um": 1.05, "max_um": 1.9, "doseBasis": "220 mJ/cm² @ 436 nm" } ], "humanVerified": false }, { "slug": "az-nlof-2020", "name": "AZ nLOF 2020", "manufacturer": "Merck", "productLine": "AZ nLOF 2000 Series", "aliases": [ "AZ nLOF™ 2020", "nLOF 2020", "AZ nLOF 2000 Series" ], "tone": "negative", "chemistry": "car", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not address grayscale or 3D patterning for AZ nLOF 2020; no such use is claimed anywhere in the document.", "status": "active", "successorSlug": null, "summary": "AZ nLOF 2020 is the thinnest grade of AZ's chemically amplified negative-tone nLOF 2000 series, coating ~1.6–4.6 µm for single-layer lift-off and etch masking with a required post-exposure bake and no rehydration wait.", "thicknessRange": { "min_um": 1.6, "max_um": 4.6, "basis": "curve-span", "source": "curve-span — the p.1 series-level bullet ('Single coat thicknesses from 2.0 to >10µm') describes the AZ nLOF 2000 Series as a whole across all three grades (2020/2035/2070) plotted together on the p.1 spin-curve chart, not this grade alone; applying it to nLOF 2020 specifically would overstate its range, since the 2020 curve (bottom, blue) tops out well under 10 µm. The grade-specific range used here is the span of the correctly-identified nLOF 2020 curve (500-4000 rpm) on that same chart. The 2.0 µm nominal reference-process thickness (p.3, p.6-7) sits inside this span." }, "spinCurves": [ { "label": "AZ nLOF 2020", "points": [ { "rpm": 500, "um": 4.6 }, { "rpm": 1000, "um": 3.3 }, { "rpm": 1500, "um": 2.8 }, { "rpm": 2000, "um": 2.4 }, { "rpm": 2500, "um": 2.1 }, { "rpm": 3000, "um": 1.9 }, { "rpm": 3500, "um": 1.7 }, { "rpm": 4000, "um": 1.6 } ], "source": "read from figure, \"SPIN CURVES (150mm Silicon)\", p.1 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — chart plots three grades (nLOF 2070 red, nLOF 2035 yellow, nLOF 2020 blue) with an explicit color-coded legend; nLOF 2020 identified by its blue 'nLOF 2020' legend entry (bottom curve, lowest thickness at every speed) and cross-checked against the grade-specific 2.0 µm reference process (p.3, p.6-7, which names 'AZ nLOF 2020 (33cPs)' explicitly).", "figureRead": true } ], "spinNotes": "This grade is the bottom (lowest-thickness-at-every-speed) trace on the three-grade family chart, identified by its blue 'nLOF 2020' legend entry — and corroborated a second way, beyond the legend color alone: this datasheet's own 2.0 µm reference process names the exact resist run as 'AZ nLOF 2020 (33cPs)' (p.3, p.6-7), matching the lowest-viscosity trace on the chart. Still a figure read, not a numeric table, so visual QC is required. No dispense volume, spin ramp, or edge-bead detail is published in this datasheet.", "adhesion": { "hmds": true, "notes": "Oxide-forming substrates (e.g. Si) should be HMDS primed prior to coating (PROCESS CONSIDERATIONS > SUBSTRATE PREPARATION, p.8). The 2.0 µm reference process specifies a vapor prime of HMDS 140°C/60s (p.3, p.6-7)." }, "rehydration": "None required — p.1 TYPICAL PROCESS states 'Rehydration Hold: None', consistent with this being a chemically amplified resist, not a DNQ resist. (Source: TYPICAL PROCESS, p.1 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21))", "softbake": { "temp_c": 110, "tempRange_c": { "min": 100, "max": 110 }, "time_s": 60, "method": "hotplate", "notes": "Consistent across every 2.0 µm nLOF 2020 reference process in this datasheet (p.3, p.6, p.7): 110°C, 60 s, direct contact hotplate. Series-level guidance (p.8) puts soft bake temperature generally in the 100-110°C range, and recommends minimizing any delay between soft bake and exposure.", "source": "EXAMPLE PROCESS (2.0µm Film Thickness on Si), p.3 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)" }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 66, "source": "EXAMPLE PROCESS (2.0µm Film Thickness on Si), p.3 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)" } ], "basisCopy": "66 mJ/cm² i-line is the nominal for a 2.0 µm film, and the through-dose data shows it still printing from 62 to 74 mJ/cm², so there is real latitude around that number." }, "peb": { "temp_c": 110, "tempRange_c": { "min": 100, "max": 115 }, "time_s": 60, "notes": "PEB is REQUIRED for proper imaging (p.1, p.8) — the critical step for nLOF, a chemically amplified negative resist, unlike the optional or absent PEB on the DNQ positive resists elsewhere in this recipe set. Reference process (p.3, p.6-7): 110°C, 60 seconds, direct contact hotplate, matching the series-level typical-process summary (p.1: 'Post Expose Bake: 110ºC/60s'). Series-level guidance (p.8) allows 100-115°C generally, and warns CD is sensitive to PEB temperature at roughly <0.04 µm/°C (the datasheet's own measured example — slope 0.038 µm/°C over 105-115°C — was run on the related 3.5 µm nLOF 2035 grade, p.5, not nLOF 2020 itself, so it is cited here as series-level supporting evidence only).", "source": "EXAMPLE PROCESS (2.0µm Film Thickness on Si), p.3, and PROCESS CONSIDERATIONS > POST EXPOSE BAKE, p.8, of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)" }, "floodExposure": null, "develop": { "developer": "AZ 300MIF", "dilution": "undiluted (ready-to-use 0.26N / 2.38% TMAH developer; no dilution ratio stated)", "time_s": 60, "method": "puddle", "rinse": null, "source": "EXAMPLE PROCESS (2.0µm Film Thickness on Si), p.3 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21): 'AZ 300MIF, 60s single puddle'" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "Series-level claim only, no grade-specific number for nLOF 2020: 'AZ nLOF materials are extremely thermally stable and may be hard baked at temperatures above 150°C' (p.8) — an open-ended floor, not a target temperature/time. The datasheet's only quantified hard-bake stability demonstration (115-130°C, large pads, qualitative SEM images) was run on the 7.0 µm nLOF 2070 grade (p.8), not on nLOF 2020.", "source": "PROCESS CONSIDERATIONS > HARD BAKE, p.8 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)" }, "descum": null, "applications": [ "lift-off", "etch-mask" ], "etchResistance": null, "liftoffSuitable": true, "platingSuitable": null, "stripper": "AZ 400T or AZ Remover 770 (solvent-based removers), recommended per PROCESS CONSIDERATIONS > STRIPPING, p.8 of AZ nLOF 2000 Series Technical datasheet.", "storage": null, "notes": "AZ nLOF 2020 is the thinnest (~2 µm) grade of AZ's chemically amplified nLOF 2000 lift-off series, and the only one of this recipe set's nLOF grades with a single stated nominal exposure dose rather than a dose-latitude sweep with no headline number: its 66 mJ/cm² i-line nominal sits comfortably inside the datasheet's own 62-74 mJ/cm² through-dose printable window, not pinned to an edge. As with the rest of the series, PEB is REQUIRED, not optional as on the DNQ positive resists elsewhere in this project, and is the step that most directly sets the negative-tone undercut lift-off profile — the datasheet's own CD-vs-PEB-temperature data (measured on the related 2035 grade) puts the sensitivity at roughly <0.04 µm/°C, so a few degrees of hotplate drift shows up as a real dimensional shift. Develop is a single 60 s AZ 300MIF puddle, simpler than the two-puddle cycle the thicker 2070 grade needs to fully clear its film. No rehydration wait is needed after softbake, unlike the thick DNQ positive resists elsewhere in this set, and the cured film's >150°C thermal stability is what lets the undercut profile survive a subsequent metal evaporation and lift-off step. The datasheet explicitly does not recommend the nLOF 2000 series for use on copper substrates.", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Performances of the Negative Tone Resist AZnLOF 2020 for Nanotechnology Applications", "authors": "Herth et al.", "journal": "IEEE Transactions on Nanotechnology", "year": 2012, "doi": "10.1109/TNANO.2012.2196802", "url": "https://doi.org/10.1109/TNANO.2012.2196802", "accessedDate": "2026-07-15", "summary": "The most-cited nLOF 2020 characterization: 50 nm lines at 100 nm pitch by e-beam" }, { "type": "paper", "title": "Spoken Digit Classification by In-Materio Reservoir Computing With Neuromorphic Atomic Switch Networks", "authors": "Lilak et al.", "journal": "Frontiers in Nanotechnology", "year": 2021, "doi": "10.3389/fnano.2021.675792", "url": "https://doi.org/10.3389/fnano.2021.675792", "accessedDate": "2026-07-15", "summary": "Lift-off Pt grid for a neuromorphic atomic-switch-network chip" } ], "troubleshooting": [ { "q": "How do I get a clean lift-off undercut with AZ nLOF 2020?", "a": "AZ nLOF 2020 is a chemically amplified negative resist, so the undercut lift-off sidewall forms directly from a standard expose/PEB/develop flow with no image-reversal step. The PEB is required for imaging: the 2.0 µm reference process is 66 mJ/cm² i-line, PEB 110°C/60 s, then a 60 s AZ 300MIF puddle. Its >150°C thermal stability lets the undercut survive metal evaporation and lift-off.", "source": "AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — EXAMPLE PROCESS (2.0µm on Si), p.3, and POST EXPOSE BAKE, p.8" }, { "q": "Why does my AZ nLOF 2020 linewidth shift between runs?", "a": "Critical dimensions in nLOF 2000 depend on post-exposure-bake temperature — the datasheet quotes a sensitivity under 0.04 µm/°C — so a few degrees of hotplate drift shows up as a real dimensional change. Hold the PEB at 110°C for 60 s, keep the hotplate level and calibrated, and minimize any delay between soft bake and exposure.", "source": "AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — PROCESS CONSIDERATIONS > POST EXPOSE BAKE, p.8" }, { "q": "What exposure dose does AZ nLOF 2020 need?", "a": "The 2.0 µm reference process uses 66 mJ/cm² nominal at i-line (365 nm), and the through-dose sweep stays printable from 62 to 74 mJ/cm², so the nominal sits inside its own latitude window rather than at an edge. Exposure must be at 365 nm. No h-line (405 nm) dose is published.", "source": "AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — EXAMPLE PROCESS (2.0µm on Si), p.3" }, { "q": "Which developer does AZ nLOF 2020 use, and is a rehydration wait needed?", "a": "Develop in AZ 300MIF, an industry-standard 0.26N/2.38% TMAH developer, as a single 60 s puddle — simpler than the two-puddle cycle the thicker 2070 grade needs. Being chemically amplified, nLOF 2020 needs no rehydration hold after soft bake (the Typical Process lists 'Rehydration Hold: None'); just minimize the soft-bake-to-exposure delay.", "source": "AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — EXAMPLE PROCESS (2.0µm on Si), p.3, and TYPICAL PROCESS, p.1" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_nlof2000_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-nlof-2035", "name": "AZ nLOF 2035", "min_um": 3, "max_um": 6.1, "doseBasis": "80 mJ/cm² @ 365 nm" }, { "slug": "az-nlof-2070", "name": "AZ nLOF 2070", "min_um": 5.3, "max_um": 11.8, "doseBasis": null } ], "humanVerified": false }, { "slug": "az-nlof-2035", "name": "AZ nLOF 2035", "manufacturer": "Merck", "productLine": "AZ nLOF 2000 series", "aliases": [ "nLOF 2035", "AZ nLOF 2035", "AZ nLOF™ 2035" ], "tone": "negative", "chemistry": "car", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed anywhere in the datasheet; the series is positioned specifically for single-layer lift-off and RIE-etch pattern transfer, not grayscale/3D lithography.", "status": "active", "successorSlug": null, "summary": "AZ nLOF 2035 is the middle grade of Merck's chemically amplified negative-tone nLOF 2000 series, coating ~3–6.1 µm for single-layer lift-off, RIE etch masking and high-aspect-ratio work, with a required PEB and thermal stability >200°C.", "thicknessRange": { "min_um": 3, "max_um": 6.1, "basis": "curve-span", "source": "curve-span — read from the plotted spin curve (\"SPIN CURVES (150mm Silicon)\", p.1), min at 4000 rpm and max at 500 rpm, the full plotted range. This is corroborated by the grade-specific EXAMPLE PROCESS table (p.4), which coats \"3.5µm thick film AZ nLOF 2035 (79cPs)\" — a value that falls within the read curve-span, between the 2500 rpm (~3.9µm) and 3000 rpm (~3.6µm) points. The series-wide stated figure in APPLICATION (p.1), \"Single coat thicknesses from 2.0 to >10µm\", spans all three nLOF 2000 grades (2020/2035/2070) combined, not nLOF 2035 alone, so this grade's own curve-span is used instead." }, "spinCurves": [ { "label": "AZ nLOF 2035", "points": [ { "rpm": 500, "um": 6.1 }, { "rpm": 1000, "um": 5.6 }, { "rpm": 1500, "um": 4.9 }, { "rpm": 2000, "um": 4.2 }, { "rpm": 2500, "um": 3.9 }, { "rpm": 3000, "um": 3.6 }, { "rpm": 3500, "um": 3.3 }, { "rpm": 4000, "um": 3 } ], "source": "read from figure (\"SPIN CURVES (150mm Silicon)\"), p.1 of AZ nLOF 2000 Series datasheet — legend-labeled \"nLOF 2035\" (yellow/orange square marker), distinguishable from the nLOF 2070 (red diamond) and nLOF 2020 (blue diamond) traces by color and marker shape across the full 500-4000 rpm plotted range. Cross-checked against the grade-specific 3.5µm coat thickness stated in the EXAMPLE PROCESS table (p.4), which falls within this reading between the 2500 and 3000 rpm points.", "figureRead": true } ], "spinNotes": "Multi-grade chart plots nLOF 2070 / nLOF 2035 / nLOF 2020 together (legend, distinct colors/markers, p.1); the nLOF 2035 trace sits clearly between the other two across the plotted range with a stated grade-specific 3.5µm anchor point (EXAMPLE PROCESS, p.4) that agrees with the read curve, giving reasonable confidence — but the reading is still a visual estimate from a plotted curve, not a printed numeric table, and no point is extrapolated past the 500-4000 rpm plotted range. No spin accel/dispense parameters or edge-bead removal procedure are published; AZ EBR Solvent/AZ EBR 70/30 are listed only as companion thinning/edge-bead products (COMPANION PRODUCTS, p.2) with no protocol given. No rehydration hold applies to this resist — the Typical Process table explicitly states \"Rehydration Hold: None\" (p.1); see the rehydration field.", "adhesion": { "hmds": true, "notes": "Grade-specific EXAMPLE PROCESS (p.4): \"Prime: HMDS 140°C/60s (vapor)\". General guidance (SUBSTRATE PREPARATION, p.8): \"Oxide forming substrates (Si, etc.) should be HMDS primed prior to coating AZ nLOF 2000\", no generic temp/time given there. Important caveat: \"AZ nLOF 2000 series photoresists are not recommended for use on copper substrates\" (COMPATIBLE MATERIALS, p.9)." }, "rehydration": "None. The Typical Process table explicitly states \"Rehydration Hold: None\" (TYPICAL PROCESS, p.1); AZ nLOF 2000 is a chemically-amplified negative resist, not a thick-DNQ resist, and this series does not require a rehydration hold.", "softbake": { "temp_c": 110, "tempRange_c": { "min": 100, "max": 110 }, "time_s": 60, "method": "hotplate", "notes": "Grade-specific EXAMPLE PROCESS (3.5µm Film Thickness on Si, p.4): \"Soft Bake: 110°C, 60s, direct contact hotplate\", preceded by an HMDS vapor prime and followed by \"Post Bake Delay: None\". Consistent with the series-wide range in PROCESS CONSIDERATIONS (p.8): \"Soft bake temperatures for AZ nLOF 2000 should be in the 100°-110°C range\" (this grade's example sits at the high end) and \"Delays between soft bake and exposure should be minimized for optimum performance.\"", "source": "EXAMPLE PROCESS (3.5µm Film Thickness on Si), p.4; SOFT BAKE, p.8 of AZ nLOF 2000 Series datasheet." }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 80, "source": "EXAMPLE PROCESS (3.5µm Film Thickness on Si), p.4 of AZ nLOF 2000 Series datasheet." } ], "basisCopy": "80 mJ/cm² i-line is the nominal for a 3.5 µm film; the through-dose panel walks 72 to 96 mJ/cm², and profile shape moves with both dose and PEB temperature." }, "peb": { "temp_c": 110, "tempRange_c": { "min": 100, "max": 115 }, "time_s": 60, "notes": "Grade-specific EXAMPLE PROCESS (p.4): \"Post Expose Bake: 110°C*, 60 seconds, direct contact hotplate\" (asterisk = same tunability caveat as exposure dose). PEB is REQUIRED, not optional: \"* PEB is required for proper imaging\" (p.1) and \"A PEB is required for proper imaging of AZ nLOF 2000\" (POST EXPOSE BAKE, p.8) — this is the critical step for this chemically-amplified negative resist. The series window is stated exactly once, in that same section: \"As a general rule, PEB temperatures should be in the 100° to 115°C range\" (p.8), alongside \"CD's in nLOF 2000 will exhibit some dependency on PEB temperature (< 0.04µm/°C is typical)\". The 105/110/115°C figures printed elsewhere in the document are the temperatures tested in the grade-specific PEB-sensitivity study for this exact 3.5µm nLOF 2035 film (\"EXAMPLE PEB SENSITIVITY (3.5µm Film Thickness on Si)\", p.5 — 60 s at each point, Top/Bottom CD 1.734/0.726µm, 1.992/1.439µm and 2.062/1.687µm) and the column headers of the p.7 profile matrix: experimental points inside the stated window, not a narrower recommended range. One internal inconsistency in that p.5 figure is worth knowing: its headline reads \"Slope = 0.038 µm/°C\" while the printed linear-fit equation on the same chart is \"y = 0.0328x - 1.6787\" (slope 0.0328, not 0.038).", "source": "EXAMPLE PROCESS (3.5µm Film Thickness on Si), p.4; EXAMPLE PEB SENSITIVITY (3.5µm Film Thickness on Si), p.5; POST EXPOSE BAKE, p.8 of AZ nLOF 2000 Series datasheet." }, "floodExposure": null, "develop": { "developer": "AZ 300MIF", "dilution": "used as supplied (ready-to-use MIF developer; industry-standard 0.26N/2.38% TMAH per DEVELOPING section)", "time_s": 120, "method": "puddle", "rinse": null, "source": "EXAMPLE PROCESS (3.5µm Film Thickness on Si), p.4; DEVELOPING, p.8 of AZ nLOF 2000 Series datasheet." }, "hardbake": { "temp_c": null, "time_s": null, "notes": "No specific temperature or time is given for nLOF 2035; the datasheet states only that \"AZ nLOF materials are extremely thermally stable and may be hard baked at temperatures above 150°C\" (HARD BAKE, p.8) and, at the series level, that \"printed features are thermally stable to >200°C\" (APPLICATION, p.1). A dedicated hard-bake stability test (115/120/125/130°C) is published, but only for AZ nLOF 2070 (7.0µm film) — not this grade — so it is not used here.", "source": "HARD BAKE, p.8; APPLICATION, p.1 of AZ nLOF 2000 Series datasheet." }, "descum": null, "applications": [ "lift-off", "etch-mask", "high-aspect-ratio" ], "etchResistance": "\"May be processed with vertical sidewalls for RIE etching\" (APPLICATION, p.1) — a qualitative capability claim; no etch rate or selectivity data is published.", "liftoffSuitable": true, "platingSuitable": true, "stripper": "AZ 400T or AZ Remover 770 (STRIPPING, p.9): \"AZ nLOF 2000 Series resists are compatible with industry standard solvent based removers.\"", "storage": null, "notes": "AZ nLOF 2035 is the middle grade in Merck's AZ nLOF 2000 series, a chemically-amplified i-line negative resist purpose-built to give an undercut lift-off sidewall from a single standard expose/PEB/develop flow, without the extra image-reversal bake/flood-expose steps older negative processes required. The PEB is not optional here — the datasheet states it is \"required for proper imaging\" and the resist's CD is directly sensitive to PEB temperature (documented at ~0.03-0.04 µm/°C for this exact 3.5µm film thickness); getting PEB temperature and time right matters more for this chemistry than for a standard DNQ positive resist. No rehydration hold is needed (explicitly \"None\" per the Typical Process table), but delays between soft bake and exposure should be minimized. It is not recommended for copper substrates. One internal inconsistency in the source document is worth flagging: a Linearity/Exposure-Latitude chart on p.6 is captioned \"AZ nLOF 2020 @ FT=3.5µm\" even though 3.5µm and a 120s develop otherwise match the nLOF 2035 example elsewhere in the same document — this recipe does not use that chart's data, since the document itself names it as the 2020 grade.", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Electrical access to critical coupling of circularly polarized waves in graphene chiral metamaterials", "authors": "Kim et al.", "journal": "Science Advances", "year": 2017, "doi": "10.1126/sciadv.1701377", "url": "https://doi.org/10.1126/sciadv.1701377", "accessedDate": "2026-07-16", "summary": "AZ nLOF 2035 was used as the negative-tone lift-off stencil for a 100 nm gold layer over a 10 nm chromium adhesion layer, defining the double-Z chiral metamaterial pattern of a graphene-gated device." }, { "type": "paper", "title": "Thermal Recovery of Damaged Hydrophobic Coatings in EWOD Devices Using an Integrated Mesh-Patterned Heater", "authors": "Son et al.", "journal": "Micromachines", "year": 2026, "doi": "10.3390/mi17050631", "url": "https://doi.org/10.3390/mi17050631", "accessedDate": "2026-07-16", "summary": "AZ-nLOF 2035 was spin-coated and patterned on the backside glass of an electrowetting device, then used to lift off a 100 nm nichrome film into a mesh-patterned integrated heater." } ], "troubleshooting": [ { "q": "How do I get an undercut lift-off profile with AZ nLOF 2035?", "a": "AZ nLOF 2035 is a chemically amplified negative resist purpose-built to replace image-reversal processing — the undercut lift-off sidewall comes directly from a standard expose/PEB/develop flow. The PEB is required for imaging. The 3.5 µm reference process runs 80 mJ/cm² i-line, PEB 110°C/60 s, then a 120 s AZ 300MIF puddle, and the film is thermally stable to >200°C.", "source": "AZ nLOF 2000 Series datasheet — EXAMPLE PROCESS (3.5µm on Si), p.4" }, { "q": "How sensitive is AZ nLOF 2035's linewidth to post-exposure-bake temperature?", "a": "Very — the datasheet's grade-specific PEB study for this 3.5 µm film tested 105/110/115°C at 60 s and measured Top/Bottom CD of 1.734/0.726 µm, 1.992/1.439 µm and 2.062/1.687 µm, i.e. roughly 0.03–0.04 µm/°C. A few degrees of drift visibly changes both linewidth and undercut, so hold the PEB temperature tightly; the datasheet's general rule is a 100–115°C PEB window.", "source": "AZ nLOF 2000 Series datasheet — EXAMPLE PEB SENSITIVITY (3.5µm on Si), p.5, and POST EXPOSE BAKE, p.8" }, { "q": "What exposure dose does AZ nLOF 2035 need?", "a": "The 3.5 µm reference process uses 80 mJ/cm² nominal at i-line (365 nm); the adjacent through-dose panel sweeps 72/80/88/96 mJ/cm² around it. Profiles can be tuned by trading exposure dose against PEB temperature. Exposure must be at 365 nm, and no h-line (405 nm) dose is published.", "source": "AZ nLOF 2000 Series datasheet — EXAMPLE PROCESS (3.5µm on Si), p.4" }, { "q": "Why does AZ nLOF 2035 develop longer than the thinner nLOF grades?", "a": "The 3.5 µm reference process uses a single 120 s AZ 300MIF puddle — twice the 60 s used for the 2.0 µm nLOF 2020 example — because a thicker film needs more time to clear. AZ 300MIF is a ready-to-use 0.26N/2.38% TMAH developer. No rehydration hold is needed; just minimize the soft-bake-to-exposure delay.", "source": "AZ nLOF 2000 Series datasheet — EXAMPLE PROCESS (3.5µm on Si), p.4, and DEVELOPING, p.8" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_nlof2000_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-nlof-2020", "name": "AZ nLOF 2020", "min_um": 1.6, "max_um": 4.6, "doseBasis": "66 mJ/cm² @ 365 nm" }, { "slug": "az-nlof-2070", "name": "AZ nLOF 2070", "min_um": 5.3, "max_um": 11.8, "doseBasis": null } ], "humanVerified": false }, { "slug": "az-nlof-2070", "name": "AZ nLOF 2070", "manufacturer": "Merck", "productLine": "AZ nLOF 2000 Series", "aliases": [ "AZ nLOF™ 2070", "nLOF 2070", "AZ nLOF 2000 Series" ], "tone": "negative", "chemistry": "car", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not address grayscale or 3D patterning for AZ nLOF 2070; no such use is claimed anywhere in the document.", "status": "active", "successorSlug": null, "summary": "AZ nLOF 2070 is the thickest grade of AZ's chemically amplified negative-tone nLOF 2000 series, coating ~5.3–11.8 µm for single-layer lift-off and etch masking; its softbake and PEB scale to 90 s and it develops in two puddle cycles.", "thicknessRange": { "min_um": 5.3, "max_um": 11.8, "basis": "curve-span", "source": "curve-span — same reasoning as az-nlof-2020: the p.1 series-level bullet ('Single coat thicknesses from 2.0 to >10µm') covers the whole AZ nLOF 2000 Series (2020/2035/2070 together), not the 2070 grade alone. The grade-specific range used here is the span of the correctly-identified nLOF 2070 curve (top, red) on the p.1 chart, 500-4000 rpm. The 7.0 µm nominal reference-process thickness (p.5) sits inside this span." }, "spinCurves": [ { "label": "AZ nLOF 2070", "points": [ { "rpm": 500, "um": 11.8 }, { "rpm": 1000, "um": 11 }, { "rpm": 1500, "um": 9.2 }, { "rpm": 2000, "um": 7.8 }, { "rpm": 2500, "um": 7 }, { "rpm": 3000, "um": 6.3 }, { "rpm": 3500, "um": 5.8 }, { "rpm": 4000, "um": 5.3 } ], "source": "read from figure, \"SPIN CURVES (150mm Silicon)\", p.1 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — chart plots three grades (nLOF 2070 red, nLOF 2035 yellow, nLOF 2020 blue) with an explicit color-coded legend; nLOF 2070 identified by its red 'nLOF 2070' legend entry (top curve, highest thickness at every speed) and cross-checked against the grade-specific 7.0 µm reference process (p.5, which names 'AZ nLOF 2070 (330cPs)' explicitly).", "figureRead": true } ], "spinNotes": "Unlike the ambiguous combined charts flagged elsewhere in this recipe set, this chart carries an explicit color-coded legend naming each of the three plotted grades individually (nLOF 2070, nLOF 2035, nLOF 2020), and the identification is cross-checked against this datasheet's own grade-specific reference-process tables (p.3, p.5), which name the exact grade and viscosity (cPs) used for each nominal film thickness. Still a figure read, not a numeric table, so visual QC is required. No dispense volume, spin ramp, or edge-bead detail is published in this datasheet.", "adhesion": { "hmds": true, "notes": "Oxide-forming substrates (e.g. Si) should be HMDS primed prior to coating (PROCESS CONSIDERATIONS > SUBSTRATE PREPARATION, p.8). The 7.0 µm reference process specifies a vapor prime of HMDS 140°C/60s (p.5)." }, "rehydration": "None required — p.1 TYPICAL PROCESS states 'Rehydration Hold: None', consistent with this being a chemically amplified resist, not a DNQ resist. The 7.0 µm reference process (p.5) likewise lists 'Post Bake Delay: None'. (Source: TYPICAL PROCESS, p.1, and EXAMPLE PROCESS (7.0µm Film Thickness on Si), p.5, of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21))", "softbake": { "temp_c": 110, "tempRange_c": { "min": 100, "max": 110 }, "time_s": 90, "method": "hotplate", "notes": "Reference process for the 7.0 µm nLOF 2070 film (p.5): 110°C, 90 s, direct contact hotplate — longer than the 60 s used for the thinner 2.0 µm (nLOF 2020) and 3.5 µm (nLOF 2035) grades, consistent with a thicker coat needing more bake time to drive off solvent. Series-level guidance (p.8) puts soft bake temperature generally in the 100-110°C range.", "source": "EXAMPLE PROCESS (7.0µm Film Thickness on Si), p.5 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)" }, "exposureDose": { "doses": [], "basisCopy": "The 7 µm process is dosed to a CD target, not to a fixed number: 174, 186 and 198 mJ/cm² i-line gave 4.45, 4.84 and 5.31 µm bottom CD on 7 µm dense mask lines. None of the three is named as the nominal." }, "peb": { "temp_c": 110, "tempRange_c": { "min": 100, "max": 115 }, "time_s": 90, "notes": "PEB is REQUIRED for proper imaging (p.1, p.8) — the critical step for nLOF, a chemically amplified negative resist, unlike the optional or absent PEB on the DNQ positive resists elsewhere in this recipe set. Reference process for 7.0 µm nLOF 2070 (p.5): 110°C, 90 seconds, direct contact hotplate (scaled up from the 60 s used on the thinner grades, matching this grade's own softbake time). Series-level guidance (p.8) allows 100-115°C generally, and warns CD is sensitive to PEB temperature at roughly <0.04 µm/°C (the datasheet's own measured example — slope 0.038 µm/°C over 105-115°C — was run on the related 3.5 µm nLOF 2035 grade, p.5, not nLOF 2070 itself, so it is cited here as series-level supporting evidence only).", "source": "EXAMPLE PROCESS (7.0µm Film Thickness on Si), p.5, and PROCESS CONSIDERATIONS > POST EXPOSE BAKE, p.8, of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)" }, "floodExposure": null, "develop": { "developer": "AZ 300MIF", "dilution": "undiluted (ready-to-use 0.26N / 2.38% TMAH developer; no dilution ratio stated)", "time_s": 120, "method": "puddle", "rinse": null, "source": "EXAMPLE PROCESS (7.0µm Film Thickness on Si), p.5 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21): 'AZ 300MIF, 2 x 60 second puddles'" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "General series claim: 'AZ nLOF materials are extremely thermally stable and may be hard baked at temperatures above 150°C' (p.8) — an open-ended floor, not a specific temperature/time. This datasheet's only quantified hard-bake demonstration is specific to this grade: large pads in a 7.0 µm nLOF 2070 film were hard baked at 115°C, 120°C, 125°C and 130°C (p.8, HARD BAKE STABILITY for Large Pads in AZ nLOF 2070) with SEM images showing the pattern edge profile across that range; no hold time is stated for the test and no single temperature is identified as the recommended process value, so this is a demonstrated range, not a chosen recipe.", "source": "PROCESS CONSIDERATIONS > HARD BAKE, and HARD BAKE STABILITY for Large Pads in AZ nLOF™ 2070 (7.0µm Film Thickness), p.8 of AZ nLOF 2000 Series Technical datasheet (Rev. 03/21)" }, "descum": null, "applications": [ "lift-off", "etch-mask" ], "etchResistance": null, "liftoffSuitable": true, "platingSuitable": null, "stripper": "AZ 400T or AZ Remover 770 (solvent-based removers), recommended per PROCESS CONSIDERATIONS > STRIPPING, p.8 of AZ nLOF 2000 Series Technical datasheet.", "storage": null, "notes": "AZ nLOF 2070 is the ~7 µm grade of AZ's nLOF 2000 series, a chemically amplified negative photoresist purpose-built to replace older image-reversal and multi-layer lift-off processes with a single expose/PEB/develop flow and a clean undercut sidewall. As with the whole series, the post-exposure bake is required, not optional, unlike the DNQ positive resists elsewhere in this recipe set, and CD is sensitive to PEB temperature (roughly <0.04 µm/°C per the datasheet's series-level guidance). Unlike thick DNQ positive resists it needs no rehydration wait after softbake, and softbake/PEB both scale up to 90 s at this thickness versus 60 s for the thinner 2020/2035 grades. It develops in AZ 300MIF (0.26N/2.38% TMAH) via two 60-second puddle cycles rather than one. Printed features are thermally stable well above 150°C — the datasheet specifically demonstrates hard-baking large 7 µm nLOF 2070 pads at 115-130°C with stable edge profiles — which is what lets nLOF's negative-tone undercut survive a subsequent metal evaporation and lift-off step. The datasheet explicitly does not recommend nLOF 2000 series resists for use on copper substrates.", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE)", "authors": "Gerlt et al.", "journal": "Micromachines", "year": 2021, "doi": "10.3390/mi12050542", "url": "https://doi.org/10.3390/mi12050542", "accessedDate": "2026-07-15", "summary": "7.2 µm nLOF 2070 DRIE mask; documents its slightly angled sidewalls" }, { "type": "paper", "title": "Fabrication of metal air bridges for superconducting circuits using two-photon lithography", "authors": "Huang et al.", "journal": "Applied Physics Letters", "year": 2025, "doi": "10.1063/5.0271788", "url": "https://doi.org/10.1063/5.0271788", "accessedDate": "2026-07-15", "summary": "7 µm nLOF 2070 air-bridge lift-off for superconducting qubit circuits, direct-write patterned" } ], "troubleshooting": [ { "q": "How do I get an undercut lift-off profile with AZ nLOF 2070?", "a": "AZ nLOF 2070 is a chemically amplified negative resist that forms the undercut lift-off sidewall directly from one expose/PEB/develop flow, replacing older image-reversal and multi-layer schemes. The PEB is required for imaging. Because printed features stay thermally stable well above 150°C, the ~7 µm undercut survives a subsequent metal evaporation and lift-off.", "source": "AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — EXAMPLE PROCESS (7.0µm on Si), p.5, and HARD BAKE, p.8" }, { "q": "Why does AZ nLOF 2070 need longer bakes and develop than the thinner grades?", "a": "It coats ~7 µm, so both soft bake and PEB scale up to 110°C/90 s (versus 60 s for the 2.0 and 3.5 µm grades) to drive off solvent and complete imaging through the thicker film, and develop is two 60 s AZ 300MIF puddles (120 s total) rather than one — a thicker coat simply needs more time to clear.", "source": "AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — EXAMPLE PROCESS (7.0µm on Si), p.5" }, { "q": "What exposure dose does AZ nLOF 2070 need?", "a": "The 7.0 µm reference process states only 'various doses' at i-line (365 nm) — no single nominal. Its bottom-CD sweep for 7.0 µm dense lines reads 174 mJ/cm² → 4.45 µm, 186 → 4.84 µm and 198 → 5.31 µm bottom CD, so dose sets the undercut; pick the point that gives your target CD and confirm on-tool. No 405 nm dose is published.", "source": "AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — EXAMPLE PROCESS (7.0µm on Si), p.5" }, { "q": "Can AZ nLOF 2070 be hard baked, and how stable is the pattern?", "a": "Printed features are thermally stable well above 150°C. The datasheet demonstrates hard-baking large 7 µm nLOF 2070 pads at 115, 120, 125 and 130°C with stable edge profiles across that range, though no single hold time or recommended temperature is named. This thermal stability is what lets the negative-tone undercut survive metal evaporation and lift-off.", "source": "AZ nLOF 2000 Series Technical datasheet (Rev. 03/21) — HARD BAKE / HARD BAKE STABILITY for Large Pads in AZ nLOF 2070, p.8" } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_nlof2000_series.pdf", "datasheetVersionOrDate": "Rev. (03/21)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "az-nlof-2020", "name": "AZ nLOF 2020", "min_um": 1.6, "max_um": 4.6, "doseBasis": "66 mJ/cm² @ 365 nm" }, { "slug": "az-nlof-2035", "name": "AZ nLOF 2035", "min_um": 3, "max_um": 6.1, "doseBasis": "80 mJ/cm² @ 365 nm" } ], "humanVerified": false }, { "slug": "az-p4620", "name": "AZ P4620", "manufacturer": "AZ Electronic Materials", "productLine": "AZ P4000 Series", "aliases": [ "P4620", "AZ P4620 Photoresist" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Datasheet does not address grayscale/3D patterning for AZ P4620; no grayscale suitability is asserted or implied by the document.", "status": "active", "successorSlug": null, "summary": "AZ P4620 is a thick, single-coat DNQ-novolak positive photoresist from the AZ P4000 series, demonstrated in this datasheet for copper and gold electroplating molds at film thicknesses from roughly 12 to 28 µm.", "thicknessRange": { "min_um": 6.9, "max_um": 14.8, "basis": "curve-span", "source": "curve-span — the dedicated p.26 spin-speed curve (1000-4000 rpm, single series) is the only P4620-specific numeric thickness range in the document. The P4000-Series spec table (p.3: 2-55 µm, 25 µm max single coat) covers the whole product family (P4620/P4903/P4400/P4330-RS/P4210/P4110, see the multi-grade chart on p.27) rather than P4620 alone, and is directly contradicted by this same document's own P4620 gold-plating process (p.7-9), which reports 28 µm achieved in a single coat — 3 µm over the series table's stated 25 µm max single coat. Individual demonstrated processes elsewhere in the document span roughly 12-28 µm (p.4, p.7, p.10, p.18, p.22) at speeds/bakes outside the p.26 curve's 1000-4000 rpm window, so the curve-span reported here is narrower than the full achievable envelope — treat it as a documented floor, not the whole range." }, "spinCurves": [ { "label": "AZ P4620 as supplied", "points": [ { "rpm": 1000, "um": 14.8 }, { "rpm": 1500, "um": 12.1 }, { "rpm": 2000, "um": 10.1 }, { "rpm": 2500, "um": 8.9 }, { "rpm": 3000, "um": 8 }, { "rpm": 3500, "um": 7.4 }, { "rpm": 4000, "um": 6.9 } ], "source": "read from figure, \"AZ® P4620 Spin Speed Curve\", p.26 of AZ P4620 Photoresist Data Package — single-product chart with one plotted series (unambiguous), softbake 110°C/180 s hotplate on 150 mm Si", "figureRead": true } ], "spinNotes": "Curve conditions per p.26: 150 mm silicon substrate, softbake 110°C/180 s hotplate. A separate multi-grade comparison chart (p.27, a lower-resolution scanned image) plots P4620 alongside P4903, P4400, P4330-RS, P4210 and P4110; at matching speeds it reads noticeably higher (~16.5 µm at 1000 rpm vs. 14.8 µm on the dedicated p.26 chart, an ~11% disagreement between the two figures in the same document). The p.26 chart was used as the published curve because it is the higher-precision, single-product source with unambiguous curve identity; the p.27 chart is noted here only as an internal-consistency flag for QC. No dispense volume, spin ramp, or edge-bead detail is published anywhere in this document.", "adhesion": { "hmds": null, "notes": "No HMDS or other adhesion-promoter step is mentioned anywhere in this datasheet." }, "rehydration": "A 60-minute rehydration wait is specified after the two-stage softbake (100°C/500 s hotplate, then 90°C/180 min oven) in the 28 µm single-coat gold-plating process, before exposure. (Source: AZ® P4620 Gold Plating Process, p.7 of AZ P4620 Photoresist Data Package)", "softbake": { "temp_c": 110, "time_s": 180, "method": "hotplate", "notes": "This is the most consistently repeated single-recipe softbake in the document (15 µm copper-plating process, p.4-6, and matches the spin-curve conditions on p.26). Other film thicknesses in this same datasheet use different bakes: 12 µm at 110°C/80 s (p.10, p.13-17); a two-layer 24 µm coat at 110°C/80 s then 115°C/180 s (p.18-21); 17 µm at 120°C/240 s (p.22); and the 28 µm single-coat process at 100°C/500 s hotplate then 90°C/180 min oven, followed by a 60-minute rehydration wait (p.7-9, see rehydration field). Softbake is thickness- and tool-dependent; no single value applies to all P4620 processes.", "source": "p.4-6 of AZ P4620 Photoresist Data Package (AZ P4620 Copper plating process conditions)" }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "spun-film", "conditionKey": "ultratech-1500-stepper", "conditionLabel": "Ultratech 1500 gh-line stepper", "bins": [ { "um_min": 12, "um_max": 12, "mJ_min": 893, "mJ_max": 927 }, { "um_min": 24, "um_max": 24, "mJ_min": 1574, "mJ_max": 1742 } ], "source": "AZ P4620 Photoresist Data Package — Ultratech 1500 gh-line stepper: dense lines / contact holes in a 12 µm film (p.11) and in a 24 µm two-layer coat (p.19). Broadband gh-line, so no single exposure wavelength is claimed." }, { "wavelength_nm": null, "binBasis": "spun-film", "conditionKey": "canon-pla-501f-aligner", "conditionLabel": "Canon PLA-501F ghi-line contact aligner", "bins": [ { "um_min": 17, "um_max": 17, "mJ_min": 630, "mJ_max": 630 } ], "source": "AZ P4620 Photoresist Data Package — Canon PLA-501F ghi-line contact aligner, 17 µm film (p.22). Broadband ghi-line, so no single exposure wavelength is claimed." } ], "basisCopy": "Every P4620 dose is tied to one film and one tool: 893 to 927 mJ/cm² for a 12 µm coat on a gh-line stepper, 630 mJ/cm² at 17 µm on a ghi-line contact aligner, 1574 to 1742 mJ/cm² for a 24 µm two-layer stack." }, "peb": null, "floodExposure": null, "develop": { "developer": "AZ 400K", "dilution": "1:4", "time_s": 300, "method": "immersion", "rinse": null, "source": "AZ P4620 Copper plating process conditions, p.4-6 of AZ P4620 Photoresist Data Package (AZ 400K 1:4, immersion 300 s, 23°C)" }, "hardbake": null, "descum": null, "applications": [ "electroplating-molding" ], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": true, "stripper": null, "storage": null, "notes": "AZ P4620 is a DNQ-novolak (diazonaphthoquinone/novolak) positive resist from AZ's thick-film P4000 series, positioned in this datasheet for copper and gold electroplating molds rather than lift-off or etch masking. It develops in AZ 400K (a buffered, metal-ion-containing alkaline developer — the datasheet's own preferred choice) or, for finer-pitch stepper lithography, in AZ 300 MIF (TMAH, metal-ion-free). Softbake, exposure dose and develop time all scale with film thickness rather than following one fixed recipe: a 12 µm coat baked at 110°C/80 s takes roughly 900 mJ/cm² on a gh-line stepper, while a 24 µm two-layer coat (110°C/80 s then 115°C/180 s) takes 1742 mJ/cm² for dense lines and 1574 mJ/cm² for contact holes (p.19). The 28 µm single-coat gold-plating process is the process worth flagging for a first-time user: it uses a two-stage softbake (100°C/500 s hotplate, then 90°C/180 min oven) followed by a 60-minute rehydration wait before exposure — a classic thick-DNQ step that is easy to skip and, if skipped, tends to cause scumming or adhesion failure at develop. As a non-chemically-amplified DNQ resist it needs no post-exposure bake.", "developerFamily": "buffered-alkaline", "references": [ { "type": "paper", "title": "Thick-film lithography using laser write", "authors": "Cheng et al.", "journal": "Microsystem Technologies", "year": 2002, "doi": "10.1007/s00542-002-0201-y", "url": "https://doi.org/10.1007/s00542-002-0201-y", "accessedDate": "2026-07-16", "summary": "AZ P4620 at 30 um thickness, over an AZ BARLi II anti-reflective coating, was patterned on a Heidelberg DWL 66 laser writer for LIGA x-ray masks. Multiple-writing schemes and defocus control were used to straighten sidewalls and suppress intensity fluctuation in the thick film." } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/datenblaetter/tds/merck/en/tds_az_p4620_photoresist.pdf", "datasheetVersionOrDate": null, "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "hare-sq", "name": "HARE SQ", "manufacturer": "KemLab Inc.", "productLine": "SQ Series", "aliases": [ "HARE SQ", "HARE-SQ", "SQ", "SQ Series", "KemLab SQ", "KemLab HARE SQ", "KemLab HARE-SQ", "HARE SQ 2", "HARE SQ 5", "HARE SQ 10", "HARE SQ 25", "HARE SQ 50", "HARE-SQ 25", "HARE-SQ 50" ], "grades": [ "SQ 2", "SQ 5", "SQ 10", "SQ 25", "SQ 50" ], "gradesSource": "stated — SQ Series TDS Rev 3-2025, 'PROCESSING GUIDELINES' table (p.2), Product column: SQ 2, SQ 5, SQ 10, SQ 25, SQ 50. SQ 50 appears on two rows (50 µm and 100 µm process points); there is no SQ 100 product.", "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet. SQ is presented as a high-aspect-ratio negative epoxy for permanent structural/microfluidic patterning with vertical sidewalls, not grayscale lithography (SU-8-class resists are used for grayscale in industry generally, but this document makes no such claim).", "status": "active", "successorSlug": null, "descum": null, "summary": "A high-aspect-ratio SU-8-class epoxy negative photoresist covering 2-100 µm film thickness in a single coat, for polymeric MEMS, microfluidics and micromachining, with vertical sidewalls suitable for permanent structures.", "thicknessRange": { "min_um": 2, "max_um": 100, "basis": "stated", "source": "stated — TDS subtitle/p.1 header: 'Film Thickness 2-100 microns'; corroborated by the FEATURES box: 'Film Thickness: Up to 100 µm single coat.'" }, "spinCurves": [ { "label": "SQ 2", "points": [ { "rpm": 1000, "um": 3.8 }, { "rpm": 2000, "um": 2.1 }, { "rpm": 3000, "um": 1.6 }, { "rpm": 4000, "um": 1.4 } ], "source": "read from the left-hand spin-curve chart (unlabeled figure, square-marker solid line = SQ 2), p.2 of SQ Series TDS; legend explicitly lists 'SQ 2' and 'SQ 5' as the two curves on this chart. The 2000 rpm read (~2.1 µm) is consistent with the Processing Guidelines table's stated reference point 'SQ 2, 2 µm @ 2000 rpm.'", "figureRead": true }, { "label": "SQ 5", "points": [ { "rpm": 1000, "um": 11.3 }, { "rpm": 2000, "um": 5.7 }, { "rpm": 3000, "um": 4.3 }, { "rpm": 4000, "um": 3.5 } ], "source": "read from the left-hand spin-curve chart (triangle-marker dashed line = SQ 5), p.2 of SQ Series TDS; legend explicitly lists 'SQ 5'. The 2000 rpm read (~5.7 µm) is consistent with the table's reference point 'SQ 5, 5 µm @ 2000 rpm.'", "figureRead": true }, { "label": "SQ 10", "points": [ { "rpm": 1000, "um": 23 }, { "rpm": 2000, "um": 12 }, { "rpm": 3000, "um": 9 }, { "rpm": 4000, "um": 7 } ], "source": "read from the right-hand spin-curve chart (diamond-marker solid line = SQ 10), p.2 of SQ Series TDS; legend explicitly lists 'SQ 10', 'SQ 25', 'SQ 50'. The 2000 rpm read (~12 µm) is reasonably consistent with the table's reference point 'SQ 10, 10 µm @ 2000 rpm' (figure-read tolerance).", "figureRead": true }, { "label": "SQ 25", "points": [ { "rpm": 1000, "um": 48 }, { "rpm": 2000, "um": 23 }, { "rpm": 3000, "um": 17 }, { "rpm": 4000, "um": 13 } ], "source": "read from the right-hand spin-curve chart (circle-marker dashed line = SQ 25), p.2 of SQ Series TDS; legend explicitly lists 'SQ 25'. The 2000 rpm read (~23 µm) matches the table's reference point 'SQ 25, 25 µm @ 2000 rpm' closely.", "figureRead": true }, { "label": "SQ 50", "points": [ { "rpm": 1000, "um": 98 }, { "rpm": 2000, "um": 48 }, { "rpm": 3000, "um": 33 }, { "rpm": 4000, "um": 24 } ], "source": "read from the right-hand spin-curve chart (triangle-marker dashed line = SQ 50), p.2 of SQ Series TDS; legend explicitly lists 'SQ 50'. The 2000 rpm read (~48 µm) matches the table's reference point 'SQ 50, 50 µm @ 2000 rpm' closely.", "figureRead": true } ], "spinNotes": "Coat program uses a 5-10 second spread cycle; spin time at final speed is 30 seconds (TDS p.2, Coat). Both spin-curve charts plot 1000-4000 rpm only (tick marks extend to 5000 but no data point is plotted there), so no 5000/6000 rpm value is reported for any grade. Edge-bead removal (EBR) is explicitly called out as necessary: 'It is necessary to remove this thick edge bead to reduce hotplate contamination... By removing the edge bead, the photomask can be positioned closer to the wafer, improving aspect ratio and resolution' (p.3) — KemLab names its own 'KL EdgeClean EBR' solvent for this step. The Processing Guidelines table's last row is labeled 'SQ 50 | 100 µm' — this repeats the 'SQ 50' product name from the row above it (which is 50 µm), rather than a distinct 'SQ 100' designation; quoted verbatim as printed, since the right-hand spin-curve chart shows only three curves (SQ 10, SQ 25, SQ 50) with no separate 100 µm curve, consistent with this being a second process recipe for the same SQ 50 material coated thicker at lower spin speed, not a sixth SKU.", "adhesion": { "hmds": null, "notes": "Not addressed. Substrate Preparation (p.2) states only that 'SQ Series adheres to variety of substrates; including silicon, gold, aluminum, glass, and chromium. For maximum adhesion, substrates should be clean and dry prior to applying SQ epoxy photoresist' — no HMDS or other primer is mentioned, unlike KemLab's other (non-epoxy) resist datasheets which explicitly recommend HMDS. The document is silent on a primer rather than stating one is unnecessary." }, "rehydration": null, "softbake": { "temp_c": null, "time_s": null, "method": "hotplate", "notes": "Softbake is a two-step contact-hotplate bake (65°C step then 95°C step) 'to minimize film stress and adhesion issues' (p.3), with both step times scaling by thickness — fundamentally a two-step process, so no single temp/time pair describes it. Per-grade values from the Processing Guidelines table (p.2): SQ2 (2 µm) 65°C/1min + 95°C/1min; SQ5 (5 µm) 65°C/1min + 95°C/3min; SQ10 (10 µm) 65°C/2min + 95°C/5min; SQ25 (25 µm) 65°C/3min + 95°C/7min; SQ50 (50 µm) 65°C/5min + 95°C/15min; SQ50 (100 µm process point) 65°C/10min + 95°C/30min.", "source": "Processing Guidelines table, p.2, and Softbake section, p.3 of SQ Series TDS" }, "exposureDose": { "doses": [], "basisCopy": "Near-UV broadband on silicon takes 200 mJ/cm² at 2 µm and a flat 180 mJ/cm² everywhere from 5 µm to 100 µm — the manufacturer calls these nominal and says they move with tool, film and process." }, "peb": { "temp_c": null, "time_s": null, "notes": "PEB is a two-step contact-hotplate bake (65°C step then 95°C step), 'adjusted according to film thickness in order to ensure sufficient crosslinking' with 'a two-step PEB... recommended to reduce film stress which can lead to cracking and/or adhesion loss' (p.3). Two-step like the softbake, so no single temp/time pair describes it. Per-grade values from the table (p.2): SQ2 65°C/1min + 95°C/2min; SQ5 65°C/1min + 95°C/2min; SQ10 65°C/1min + 95°C/2min; SQ25 65°C/1min + 95°C/3min; SQ50 (50 µm) 65°C/1min + 95°C/5min; SQ50 (100 µm process point) 65°C/2min + 95°C/10min.", "source": "Processing Guidelines table, p.2, and Post-Exposure Bake section, p.3 of SQ Series TDS" }, "floodExposure": null, "develop": { "developer": "KemLab SQ Developer (SU-8 PGMEA)", "dilution": null, "time_s": null, "method": "immersion", "rinse": "Isopropyl alcohol (IPA) rinse and dry (TDS p.3, Develop).", "source": "Processing Guidelines table (column header 'Develop Immersion'), p.2, and Develop section, p.3 of SQ Series TDS" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "Hardbake is optional, for permanent applications: 'Bake at > 120°C for at least 5 minutes (hot plate). A short hardbake can fuse cracks caused by film stress. For permanent structures, temperatures above 150°C are recommended. Oven bake will increase crosslinking with minimal increase in stress' (p.3). Both figures are open-ended minimum thresholds ('>120°C', 'at least 5 minutes', 'above 150°C'), not single recommended set-points, and are quoted here as printed.", "source": "Hardbake section, p.3 of SQ Series TDS" }, "applications": [ "mems-structural", "microfluidics", "high-aspect-ratio" ], "etchResistance": null, "liftoffSuitable": false, "platingSuitable": null, "stripper": null, "storage": "Avoid light; store in an upright airtight container at 4-21°C or room temperature. If refrigerated, bring up to room temperature before opening. Keep away from oxidizers, acids, bases and ignition sources (TDS p.4, Storage).", "notes": "This datasheet's own title and running header are 'SQ Series' throughout — it never uses the name 'HARE SQ' anywhere in the body text. The KemLab product webpage this PDF was found on (kemlab.com/haresq) is titled 'HARE SQ Negative Epoxy,' and a second webpage (kemlab.com/sq-su8-epoxy-photoresist) titled simply 'SQ' links to this identical PDF. 'HARE' most plausibly stands for 'High Aspect Ratio Epoxy,' matching the TDS's own subtitle 'High Aspect Ratio SU-8 Epoxy Photoresist' — treated here as the same product under two marketing names, not as two distinct products, since no second, differently-numbered datasheet was found. The chemistry is explicitly stated as 'SU-8 polymer epoxy' (FEATURES box, p.1) — an SU-8-class thick-film epoxy negative resist, not merely SU-8-like. Both softbake and PEB are recommended as deliberate two-step (65°C then 95°C) bakes specifically to manage film stress and cracking in thick films, and the process explicitly requires edge-bead removal to protect hotplates and improve achievable aspect ratio. Notably, unlike every other KemLab TDS read for this library, this document publishes no resist-removal/stripper section at all — consistent with the general difficulty of stripping thick, heavily-crosslinked SU-8-class epoxy negatives (especially once hardbaked above 150°C for permanent use), so no stripper value is asserted here; process/tooling should plan around that difficulty rather than assume a solvent strip will work as with the manufacturer's other product lines. This is a permanent structural resist, not a lift-off resist — KemLab markets its separate APOL-LO 3200 series for lift-off profiles.", "developerFamily": "solvent", "references": [ { "type": "paper", "title": "ZnO Nanowire-Anchored Microfluidic Device With Herringbone Structure Fabricated by Maskless Photolithography", "authors": "Sooriyaarachchi et al.", "journal": "Biomedical Engineering and Computational Biology", "year": 2020, "doi": "10.1177/1179597220941431", "url": "https://doi.org/10.1177/1179597220941431", "accessedDate": "2026-07-16", "summary": "A herringbone-structured microfluidic device anchored with ZnO nanowires, for extracting microRNA from urine extracellular vesicles. The resist was spin-coated and then patterned by maskless direct-write lithography on a Microwriter ML3, with the matching HARE developer.", "note": "Uses the H.A.R.E SQ10 grade of KemLab's SQ series (this entry covers the series as a whole), named in Methods: 'a thin layer of negative photoresist (H.A.R.E SQ10, KemLab, Woburn, MA) was spin-coated'. Cited as a maskless direct-write example; the paper does not characterize the series' other grades." }, { "type": "paper", "title": "Fully Automated Microsystem for Unmediated Electrochemical Characterization, Visualization and Monitoring of Bacteria on Solid Media; E. coli K-12: A Case Study", "authors": "Hernandez et al.", "journal": "Biosensors", "year": 2019, "doi": "10.3390/bios9040131", "url": "https://doi.org/10.3390/bios9040131", "accessedDate": "2026-07-16", "summary": "The resist forms the confinement microstructures of an automated microsystem for electrochemical monitoring of bacteria on solid media: a polymeric layer carrying a 3 mm culture chamber connected to a microchannel, constraining E. coli growth toward embedded gold microelectrodes.", "note": "Uses the HARE SQ-25 grade of the SQ series (this entry covers the series as a whole), named in Reagents and Equipment: 'Negative photoresist HARE SQ-25 (SQ-25 photo resist) and HARE Developer were purchased from KemLab'. Conventional photolithography, not maskless; cited as evidence of the series in permanent structural use." } ], "provenance": { "datasheetUrl": "https://www.kemlab.com/_files/ugd/5b8579_fe35828f146544b997e518176bdf6c58.pdf", "datasheetVersionOrDate": "Copyright 2025 © KemLab Inc., Rev 3-2025", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "hmds", "name": "HMDS (Hexamethyldisilazane)", "manufacturer": "MicroChemicals GmbH (application-note publisher; HMDS itself is a commodity chemical sold by many suppliers, not a single manufacturer's proprietary product)", "productLine": null, "aliases": [ "HMDS", "Hexamethyldisilazane", "Hexamethyl disilazane", "(NH)[Si(CH3)3]2" ], "tone": null, "chemistry": "ancillary", "photoimageable": false, "grayscaleSuitable": false, "grayscaleNote": "Not applicable — HMDS is a vapor-phase adhesion promoter, not a photoimageable resist. Grayscale/3D lithography is not addressed anywhere in this application note.", "status": "active", "successorSlug": null, "summary": "HMDS (hexamethyldisilazane) is a vapor-phase adhesion promoter used ahead of photoresist coating: it chemically converts a hydrophilic, oxidized substrate surface (native/thermal SiO2, quartz, glass, most base metals) into a hydrophobic, resist-wetting surface by bonding a monolayer of trimethylsilyl groups, releasing ammonia as a byproduct.", "thicknessRange": null, "spinCurves": [], "spinNotes": "HMDS must not be spin-coated as a liquid — the only correct application is vapor-phase, via a nitrogen-carrier 'bubbler' held at room temperature feeding a heated (75-120°C) substrate, where HMDS bonds chemically as a monolayer (\"Correct Use of HMDS\", Fig. 47-48, p.2). If liquid HMDS is spun on instead, the resulting layer is only physically (not chemically) bound; ammonia released from it during the resist softbake diffuses into and cross-links the resist near the substrate, suppressing development and degrading resolution and profile (\"Incorrect Application of HMDS\", Fig. 49, p.2-3) — this failure mode is explicitly documented, not inferred. For the same reason, the note advises against applying HMDS in the same spin coater used for resist coating (slow HMDS evaporation can contaminate later coating runs); if spin-application is unavoidable, it recommends a 100-120°C water-desorption bake beforehand, a 100-120°C thermal-activation bake afterward, and strict spatial separation from resist-coating equipment (p.3). There is no legitimate spin-speed-vs-thickness relationship for a vapor-deposited chemisorbed monolayer, so HMDS has no spin curve at all — that is the chemistry, not missing data.", "adhesion": { "hmds": null, "notes": "Not applicable — this entry describes HMDS itself (the adhesion promoter), not a photoresist that would require HMDS pretreatment." }, "rehydration": null, "softbake": { "temp_c": null, "tempRange_c": { "min": 75, "max": 120 }, "time_s": null, "method": null, "notes": "Vapor-phase application: HMDS vapor is carried by dry nitrogen from a room-temperature bubbler onto a substrate held at 75-120°C, where it bonds chemically as a monolayer. That 75-120°C is the substrate temperature during the prime itself, not a bake of a coated film — HMDS goes on bare substrate, before any resist. No dwell time is published. If HMDS can only be spin-coated — documented, but explicitly the wrong way to apply it — bake at 100-120°C beforehand to desorb water, then again at 100-120°C to activate after application. Independently of which adhesion promoter is used, a substrate dehydration bake of roughly 120°C for a few minutes (above 140°C on oxidized surfaces, for maximum adhesion) precedes the prime.", "source": "Correct Use of HMDS / Incorrect Application of HMDS, p.2-3; Adsorbed Water, p.1" }, "exposureDose": null, "peb": null, "floodExposure": null, "develop": null, "hardbake": null, "descum": null, "applications": [], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": null, "stripper": null, "storage": null, "notes": "HMDS (hexamethyldisilazane) is a vapor-phase adhesion promoter, not a photoimageable resist: it converts a hydrophilic, OH-terminated oxide surface (native or thermal SiO2, quartz, glass, most base metals) into a hydrophobic, resist-wetting surface by chemically bonding a monolayer of non-polar trimethylsilyl groups, releasing ammonia as a byproduct (p.2). The only correct application is vapor-phase, via a nitrogen-carrier bubbler at room temperature feeding a substrate heated to 75-120°C; spin-coating liquid HMDS instead yields only a physically bound layer whose ammonia, released during the subsequent resist softbake, diffuses into and cross-links the resist near the substrate, suppressing development and degrading resolution — a failure mode this note documents explicitly as 'Incorrect Application' (p.2-3). On noble metals without native oxide (gold, platinum), HMDS and other organic adhesion promoters show little to no adhesion benefit because they cannot chemically bond to the surface; base metals such as Al, Cr and especially Ti already adhere well without a promoter (p.3-4). This document is a general MicroChemicals application-note chapter ('01 Chapter — Basics of Microstructuring: Substrate Preparation'), not a manufacturer technical datasheet for a specific HMDS product or grade — HMDS itself is a commodity chemical sold by many suppliers, and this note is the correct place to attribute process guidance about it rather than any single vendor's TDS.", "developerFamily": null, "references": [ { "type": "paper", "title": "Characterization of SiO2 Surface Treated by HMDS Vapor and O2 Plasma with AFM Tip", "authors": "Kawai and Kawakami", "journal": "Journal of Photopolymer Science and Technology", "year": 2003, "doi": "10.2494/photopolymer.16.665", "url": "https://doi.org/10.2494/photopolymer.16.665", "accessedDate": "2026-07-16", "summary": "Silicon oxide substrates are silane-coupling treated with HMDS and separately exposed to oxygen plasma, then probed with an AFM tip to characterize the resulting surface. Measures the surface change that HMDS priming is performed to produce, on the oxide that resist is subsequently coated onto.", "note": "HMDS is the subject of the study, applied by vapor as in this entry's process. It is a surface-characterization paper rather than a lithographic process study, so it corroborates the mechanism of HMDS priming, not any process number given here." } ], "provenance": { "datasheetUrl": "https://www.microchemicals.com/dokumente/application_notes/substrate_cleaning_adhesion_photoresist.pdf", "datasheetVersionOrDate": null, "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "k-pro", "name": "K-PRO series", "manufacturer": "KemLab, Inc.", "productLine": "K-PRO series", "aliases": [ "K-PRO", "KPRO", "K PRO", "KemLab K-PRO", "K-PRO 15", "K-PRO15", "KPRO 15", "KPRO15", "KemLab K-PRO 15", "KemLab K-PRO15", "KLP4800" ], "grades": [ "K-PRO 1", "K-PRO 2", "K-PRO 3", "K-PRO 5", "K-PRO 7", "K-PRO 15" ], "gradesSource": "stated — K-PRO TDS Rev 3-2021, 'PROCESSING GUIDELINES' table (p.1), Product column: K-PRO 1, K-PRO 2, K-PRO 3, K-PRO 5, K-PRO 7, K-PRO 15. The grade number does not track film thickness one-for-one — K-PRO 5 is tabulated at 4 µm, and K-PRO 15 carries two rows (15 µm and 25 µm) — so the numbers are product names, not thickness specifications.", "tone": "positive", "chemistry": null, "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet. K-PRO is presented for binary plating and etch patterning — steep wall profiles and high aspect ratios — not for grayscale height modulation.", "status": "active", "successorSlug": null, "summary": "A series of thick-film positive photoresists (K-PRO 1 through K-PRO 15) covering 1-25 µm in a single coat, aimed at plating, bumping and TSV work. Developed in TMAH- or KOH-based developers, and no post-exposure bake is required.", "thicknessRange": { "min_um": 1, "max_um": 25, "basis": "stated", "source": "stated — Features block, p.1 of the K-PRO TDS: 'Film Thickness: 1 – 25 µm single coat'; corroborated by the p.1 Processing Guidelines table, whose tabulated film thicknesses run 1, 2, 3, 4, 7, 15 and 25 µm." }, "spinCurves": [], "spinNotes": "The datasheet targets film thickness from the two spin-speed charts on p.2 and publishes nothing else about the coat program — no spread cycle, no final-speed dwell, no dispense volume, no substrate size, and no edge-bead-removal step. Both charts are plotted from 500 to 4000 rpm, so anything outside that window is extrapolation.", "adhesion": { "hmds": true, "notes": "HMDS primer is recommended with oxide-forming substrates such as silicon (TDS p.2, Substrate Preparation); K-PRO adheres to silicon, copper, gold, glass, aluminum and chromium, and the datasheet claims excellent substrate adhesion for wet-etch work." }, "rehydration": "3-30 minutes at 35-50% relative humidity, scaling with film thickness (TDS p.2, Rehydration Time). The p.1 table pins it per process point: 3 min up to 3 µm, 5 min at 4 µm, 15 min at 7 µm, 30 min at 15 and 25 µm. A thick DNQ-type film that has not rehydrated will develop slowly and scum, so this step is not optional on the thicker grades.", "softbake": { "temp_c": 115, "time_s": null, "timeRange_s": { "min": 120, "max": 300 }, "method": "hotplate", "notes": "Narrative Softbake section (p.2): 'Recommended softbake contact hotplate temperature is 115°C. Typical bake time is 2 – 5 minutes.' No single typical time is named, so the published 2-5 min window is recorded rather than a scalar. The p.1 Processing Guidelines table gives the per-thickness times at that same 115°C: 2 min at 1, 2 and 3 µm; 2.5 min at 4 µm; 3 min at 7 µm; 4 min at 15 µm; and 5.5 min at 25 µm — the 25 µm point sits above the narrative window.", "source": "Softbake section, p.2, and Processing Guidelines table, p.1, of the K-PRO TDS Rev 3-2021." }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "spun-film", "bins": [ { "um_min": 1, "um_max": 1, "mJ_min": 65, "mJ_max": 65 }, { "um_min": 2, "um_max": 2, "mJ_min": 72, "mJ_max": 72 }, { "um_min": 3, "um_max": 3, "mJ_min": 76, "mJ_max": 76 }, { "um_min": 4, "um_max": 4, "mJ_min": 80, "mJ_max": 80 }, { "um_min": 7, "um_max": 7, "mJ_min": 125, "mJ_max": 125 }, { "um_min": 15, "um_max": 15, "mJ_min": 210, "mJ_max": 210 }, { "um_min": 25, "um_max": 25, "mJ_min": 380, "mJ_max": 380 } ], "source": "'Broadband Aligner Exposure' column of the Processing Guidelines table, p.1 of the K-PRO TDS Rev 3-2021." } ], "basisCopy": "Broadband aligner dose climbs steeply with the coat — 65 mJ/cm² at 1 µm, 125 at 7 µm, 380 at 25 µm. No i-line or g-line number is published, so read the row for your film and bracket it with a dose array." }, "peb": null, "floodExposure": null, "develop": { "developer": "0.26N TMAH", "dilution": null, "time_s": null, "method": null, "rinse": null, "notes": "The datasheet names three developer chemistries as interchangeable — 0.26N TMAH, KOH and potassium borates — by immersion, puddle or spray puddle, and recommends refreshing developer mid-step on the thick films (two immersion baths, or multiple puddles). 0.26N TMAH is recorded as the developer because it is the one the datasheet names first and the only one given at a stated normality.", "source": "Development section, p.3, and the Features block, p.1, of the K-PRO TDS Rev 3-2021." }, "hardbake": null, "descum": null, "applications": [ "electroplating-molding", "etch-mask", "high-aspect-ratio" ], "etchResistance": "Wet chemical etchants for Au, Cu, Cr and Al do not degrade patterns made with K-PRO (TDS p.3, Etch Resist).", "liftoffSuitable": null, "platingSuitable": true, "stripper": "Industry-standard removers such as NMP at 50-80°C (TDS p.3, Resist Removal). Thicker films may benefit from a two-bath process — the first bath takes off the bulk, the second cleans up.", "storage": "Store upright in an airtight container at 4-21°C, away from light, oxidizers, acids, bases and ignition sources (TDS p.3, Storage).", "notes": "K-PRO is KemLab's advanced-packaging positive series — six grades sharing one process family, aimed at plating, bumping, TSV and other metal-deposition work rather than at general lithography. Two things set it apart from a conventional thick positive resist. First, no post-exposure bake is required at all, which removes a step and its associated stress from the flow. Second, rehydration is an explicit, thickness-dependent process step (3 min at 1-3 µm rising to 30 min at 15-25 µm, at 35-50% RH) rather than an afterthought — skip it on the thick grades and development slows and scums. Broadband dose climbs steeply with the coat, from 65 mJ/cm² at 1 µm to 380 at 25 µm, so a dose array around the tabulated row for your film is the practical starting point. The grade numbers are product names, not thicknesses: K-PRO 5 is tabulated at 4 µm and K-PRO 15 covers both the 15 and 25 µm process points. Compatibility with copper, pure tin and nickel plating chemistries is claimed by the manufacturer, as is wet-etch resistance to Au, Cu, Cr and Al etchants; both are worth confirming against your own bath.", "developerFamily": "tmah-or-buffered-alkaline", "provenance": { "datasheetUrl": "https://www.kemlab.com/_files/ugd/5b8579_685a4979950141ac81d6cd2748d9a4d3.pdf", "datasheetVersionOrDate": "Rev 3-2021 (Copyright 2021 KemLab, Inc.; ISO 9001:2015 certified mark on every page)", "accessedDate": "2026-08-04", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-08-04", "dateModified": "2026-08-04", "curvesWithheld": true, "humanVerified": false }, { "slug": "kl-5300", "name": "KL 5300 series", "manufacturer": "KemLab Inc.", "productLine": "KL 5300 series", "aliases": [ "KL5300", "KL 5300", "KemLab KL-5300", "KemLab KL 5300 series", "KL 5315", "KL 5310", "KL 5305", "KL 5302", "KL5302 HI-RES", "KL5302 HiRes" ], "grades": [ "KL5315", "KL5310", "KL5305", "KL5302-HiRes" ], "gradesSource": "stated — KL5300 Positive Photoresist TDS, 'PROCESSING GUIDELINES' table (p.1), column headers: KL5315, KL5310, KL5305, KL5302-HiRes, each with its own film-thickness range.", "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet. KL5300 is presented as a standard i-line/g-line/broadband positive resist for conventional binary patterning (0.55 µm resolution claimed), not grayscale lithography.", "status": "active", "successorSlug": null, "summary": "A series of thin-film positive photoresists (KL5315, KL5310, KL5305, KL5302-HiRes) spanning 0.15-2.5 µm single-coat thickness, developed in 0.26N TMAH for i-line, g-line and broadband exposure.", "thicknessRange": { "min_um": 0.15, "max_um": 2.5, "basis": "stated", "source": "stated — the TDS's 'Film thickness Range (microns)' table (p.1/p.2) gives four grade-specific stated ranges (KL5302-HiRes 0.15-0.30, KL5305 0.4-1.0, KL5310 0.7-1.5, KL5315 1.2-2.5 µm); min/max here is the span across all four stated grade ranges, not a curve span." }, "spinCurves": [ { "label": "KL5315", "points": [ { "rpm": 1000, "um": 2.35 }, { "rpm": 2000, "um": 1.68 }, { "rpm": 3000, "um": 1.4 }, { "rpm": 4000, "um": 1.2 }, { "rpm": 5000, "um": 1.05 } ], "source": "read from figure 3, p.2 of KL 5300 series TDS — identified by legend color (blue = KL5315) on the combined 'KL5300 Spin Curve' chart; the topmost curve, consistent with KL5315 having the largest stated film-thickness range (1.2-2.5 µm).", "figureRead": true }, { "label": "KL5310", "points": [ { "rpm": 1000, "um": 1.42 }, { "rpm": 2000, "um": 0.98 }, { "rpm": 3000, "um": 0.8 }, { "rpm": 4000, "um": 0.7 }, { "rpm": 5000, "um": 0.63 } ], "source": "read from figure 3, p.2 of KL 5300 series TDS — identified by legend color (red = KL5310) on the combined 'KL5300 Spin Curve' chart; second curve from top, consistent with the stated 0.7-1.5 µm range.", "figureRead": true }, { "label": "KL5305", "points": [ { "rpm": 1000, "um": 0.92 }, { "rpm": 2000, "um": 0.62 }, { "rpm": 3000, "um": 0.53 }, { "rpm": 4000, "um": 0.47 }, { "rpm": 5000, "um": 0.43 } ], "source": "read from figure 3, p.2 of KL 5300 series TDS — identified by legend color (green = KL5305) on the combined 'KL5300 Spin Curve' chart; third curve from top, consistent with the stated 0.4-1.0 µm range.", "figureRead": true }, { "label": "KL5302-HiRes", "points": [ { "rpm": 1000, "um": 0.27 }, { "rpm": 2000, "um": 0.19 }, { "rpm": 3000, "um": 0.16 }, { "rpm": 4000, "um": 0.14 }, { "rpm": 5000, "um": 0.125 } ], "source": "read from figure 4, p.2 of KL 5300 series TDS — a dedicated single-curve 'KL5302 HI-RES Spin Curve' chart (purple, unambiguous, no other grade plotted), consistent with the stated 0.15-0.3 µm range.", "figureRead": true } ], "spinNotes": "Spin curves determined on 6-inch Si with static dispense of ~4 mL of KL5300 photoresist (TDS p.2). No spin ramp/accel profile or edge-bead-removal step is published for KL5300.", "adhesion": { "hmds": true, "notes": "HMDS primer recommended with oxide-forming substrates (Si, etc.) for maximum adhesion; KL5300 also adheres to copper, gold, glass, aluminum and chromium (TDS p.1, Substrate Preparation)." }, "rehydration": null, "softbake": { "temp_c": 105, "time_s": 60, "method": "hotplate", "notes": "Processing-guidelines table (p.1) gives a single softbake condition, 105°C for 60 seconds, applied uniformly across all four grades. Separately, the narrative Softbake section (p.3) gives a broader recommended range: 'contact hotplate temperature is 90-105°C. Typical bake time is 60 seconds' — 105°C is the top of that range and matches the table value, used here as the single recipe value.", "source": "Processing Guidelines table, p.1 of KL 5300 series TDS; corroborated by Softbake section, p.3." }, "exposureDose": { "doses": [], "basisCopy": "Each grade in the family carries its own broadband dose: 30 mJ/cm² for KL5305, 35 for KL5310, 40 for KL5315 and 60 for KL5302-HiRes. No single number covers the family." }, "peb": { "temp_c": 115, "time_s": 60, "notes": "Processing-guidelines table gives a single PEB condition (115°C/60s) applied uniformly across all four grades; confirmed verbatim in the Post-Exposure Bake section (p.4): 'Bake on contact hotplate at 115ºC for 60 seconds.'", "source": "Processing Guidelines table, p.1, and Post-Exposure Bake section, p.4 of KL 5300 series TDS" }, "floodExposure": null, "develop": { "developer": "0.26N TMAH", "dilution": null, "time_s": null, "method": null, "rinse": null, "source": "Processing Guidelines table, p.1, and Development section, p.4 of KL 5300 series TDS" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "The optional Hard Bake row in the Processing Guidelines table (p.1) lists three conditions — 105°C for 60 seconds, 115°C for 60 seconds, 110°C for 60 seconds — under four grade columns (KL5315, KL5310, KL5305, KL5302-HiRes). The column-to-value alignment is not legible from the extracted table (three values, four columns), so which condition belongs to which grade cannot be told from this document; all three are quoted as printed.", "source": "Processing Guidelines table, p.1 of KL 5300 series TDS" }, "descum": null, "applications": [ "general-prototyping", "etch-mask" ], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": null, "stripper": "NMP, DMSO or similar solvent-based removers at 50-80°C (TDS p.1/p.4, Resist Removal); thicker films may benefit from a two-bath process — first bath removes bulk resist, second bath cleans thoroughly.", "storage": "Avoid light; store in an upright airtight container at 4-21°C, away from oxidizers, acids, bases and ignition sources (TDS p.4, Storage).", "notes": "KL5300 is a series of four grades (KL5315, KL5310, KL5305, KL5302-HiRes) sharing one process family but with distinct spin curves, doses and develop times scaled to their target thickness band, from ~0.15 µm (KL5302-HiRes, high-resolution thin coat) up to 2.5 µm (KL5315). The datasheet's optical characterization (refractive index vs. wavelength, absorbance, i-line/g-line swing curves) is series-wide rather than grade-specific. As with any DNQ-class positive resist family, softbake and PEB times should be re-verified on-tool since the datasheet's single softbake/PEB condition is applied uniformly across grades of very different viscosity and coat thickness. HMDS priming is recommended on oxide-forming substrates; no adhesion promoter step beyond that is specified. Chemistry classified as dnq-novolak from the KemLab KL5300 MSDS composition table (mixed cresol novolak resin + diazo photoactive compound).", "developerFamily": "tmah", "provenance": { "datasheetUrl": "https://www.kemlab.com/_files/ugd/5b8579_b2a2f2276aa74224a5ef58ed804848ea.pdf", "datasheetVersionOrDate": "Copyright 2022 © KemLab Inc., Rev 1-2022", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.nanofab.utah.edu/wp-content/uploads/2018/08/Positive-PhotoResist-%E2%80%93-KL5300-KemLab-27Feb15_v1.pdf", "what": "KemLab KL5300 MSDS states 'Mixed cresol novolak resin <25.0%, Diazo Photoactive Compound <4.0%'; the basis for classifying KL5300 as dnq-novolak." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "kl-6000", "name": "KL 6000 series", "manufacturer": "KemLab Inc.", "productLine": "KL 6000 series", "aliases": [ "KL6000", "KL 6000", "KemLab KL-6000", "KemLab KL 6000 series", "KL 6008", "KL 6005", "KL 6003" ], "grades": [ "KL6008", "KL6005", "KL6003" ], "gradesSource": "stated — KemLab KL6000 Positive Photoresist TDS, 'Process Guide' table (p.1) Product row and the 'Film Thickness Range / Viscosity' table (p.2): KL6008, KL6005, KL6003.", "tone": "positive", "chemistry": null, "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet. KL6000 is presented as a thick-film positive resist for conventional binary patterning (1-3 µm line resolution demonstrated at various thicknesses), not grayscale lithography.", "status": "active", "successorSlug": null, "summary": "A series of thick-film positive photoresists (KL6008, KL6005, KL6003) covering 2.5-12+ µm in a single coat, developed in 0.26N TMAH for i-line, g-line and broadband exposure; PEB is not required for most applications.", "thicknessRange": { "min_um": 2.5, "max_um": 12, "basis": "stated", "source": "stated — the TDS bullet on p.1 states 'Cover 2.5 – 12 microns in a single coat'; corroborated by the p.2 'Film Thickness Range' table's per-grade stated ranges (KL6003 2.5-4.5, KL6005 4-7, KL6008 5-12+ µm), whose combined span matches." }, "spinCurves": [ { "label": "KL6008", "points": [ { "rpm": 1000, "um": 10 }, { "rpm": 2000, "um": 7 }, { "rpm": 3000, "um": 5.7 }, { "rpm": 4000, "um": 5 }, { "rpm": 5000, "um": 4.4 } ], "source": "read from figure 'KL6000 Spin Curve', p.2 of KL 6000 series TDS — identified by legend marker/color (blue diamonds = KL6008) on the combined three-curve chart; topmost curve, consistent with KL6008 having the largest stated film-thickness range (5-12+ µm).", "figureRead": true }, { "label": "KL6005", "points": [ { "rpm": 1000, "um": 7.3 }, { "rpm": 2000, "um": 5.2 }, { "rpm": 3000, "um": 4.2 }, { "rpm": 4000, "um": 3.6 }, { "rpm": 5000, "um": 3.2 } ], "source": "read from figure 'KL6000 Spin Curve', p.2 of KL 6000 series TDS — identified by legend marker/color (red squares = KL6005) on the combined three-curve chart; middle curve, consistent with the stated 4-7 µm range.", "figureRead": true }, { "label": "KL6003", "points": [ { "rpm": 1000, "um": 5.1 }, { "rpm": 2000, "um": 3.6 }, { "rpm": 3000, "um": 2.9 }, { "rpm": 4000, "um": 2.5 }, { "rpm": 5000, "um": 2.2 } ], "source": "read from figure 'KL6000 Spin Curve', p.2 of KL 6000 series TDS — identified by legend marker/color (purple triangles = KL6003) on the combined three-curve chart; bottom curve, consistent with the stated 2.5-4.5 µm range.", "figureRead": true } ], "spinNotes": "Coat program includes a 5-10 second spread cycle (longer for thicker films); spin time at final speed is 45 seconds. Spin curves determined on 6-inch Si with static dispense of ~4 mL of KL6000 photoresist (TDS p.2, Spin Coat). The TDS also publishes a fine-tuning formula for thickness under 10 µm: New Spin Speed = Spin Speed x (measured film thickness / desired film thickness)^2. No explicit edge-bead-removal step is published.", "adhesion": { "hmds": true, "notes": "HMDS (hexamethyldisilazane) primer is recommended and 'will increase adhesion of KL6000 to most substrates' (TDS p.2, Substrate); KL6000 adheres to gold, glass, aluminum, chromium and copper." }, "rehydration": null, "softbake": { "temp_c": 105, "time_s": 120, "method": "hotplate", "notes": "Narrative Soft Bake section (p.2): 'The recommended soft-bake by hotplate is 105°C +/- 5°C. Typical bake time is 120 seconds; longer bake times can help to drive the casting solvent out of thicker films.' 120 s is used here as the labeled-typical value. The p.1 Process Guide table instead gives four thickness-specific times at the same 105°C — 150 s (11 µm and 8 µm points on KL6008), 120 s (5 µm point on KL6005), 90 s (3 µm point on KL6003) — reflecting the 'longer bake for thicker films' guidance; these are recorded here rather than promoted to the scalar since they are per-thickness, not typical/series-wide.", "source": "Soft Bake section, p.2 of KL 6000 series TDS ('Typical bake time is 120 seconds'); per-thickness table values on p.1 Process Guide." }, "exposureDose": { "doses": [], "basisCopy": "Broadband on silicon climbs with the coat — 90 mJ/cm² at 3 µm, 120 at 5 µm, 180 at 8 µm, 210 at 11 µm. Dill A/B/C constants are published at 365 nm as well, but those are modelling inputs and carry no dose." }, "peb": { "temp_c": 90, "time_s": 90, "notes": "PEB is not necessary for most applications (TDS p.1 table: '90°C for 90 sec if needed'; p.3 Post-Exposure Bake section: 'PEB is not necessary for most applications. If PEB is preferred for a particular process, bake on a contact hotplate at 90°C for 90 seconds.'). Unlike softbake/exposure/develop, this single condition is constant across all three grades — it is an optional step, not a required one.", "source": "Process Guide table, p.1, and Post-Exposure Bake section, p.3 of KL 6000 series TDS" }, "floodExposure": null, "develop": { "developer": "0.26N TMAH", "dilution": null, "time_s": null, "method": null, "rinse": null, "source": "Process Guide table, p.1, and Develop section, p.3 of KL 6000 series TDS" }, "hardbake": null, "descum": null, "applications": [ "etch-mask", "general-prototyping" ], "etchResistance": "Wet chemical etchants for Au, Cu, Cr, Al, etc. do not degrade patterns made with KL6000 (TDS p.3, Etch Resist).", "liftoffSuitable": null, "platingSuitable": null, "stripper": "NMP, DMSO or similar solvent-based removers at 50-80°C (TDS p.3, Photoresist Removal); thicker films may benefit from a two-bath process — first bath removes bulk resist, second bath cleans thoroughly.", "storage": "Store upright in tightly closed containers at 40-70°F (4-21°C), away from oxidizers, acids, bases and ignition sources (TDS p.3, Storage).", "notes": "KL6000 is a series of three grades (KL6008, KL6005, KL6003) sharing one thick-film process family, with the Process Guide table demonstrating four representative thickness/process points: 11 µm and 8 µm on KL6008, 5 µm on KL6005, and 3 µm on KL6003 (softbake 90-150 s at 105°C, broadband dose 90-210 mJ/cm2, develop 45-90 s by spray puddle, scaling with thickness). PEB is explicitly optional and not required for most applications — a notable process simplification versus thinner i-line resists. As a thick single-coat resist, edge-bead buildup and softbake solvent retention are the process risks most worth re-verifying on-tool for the thickest (KL6008) grade; the datasheet itself flags that longer softbake helps drive solvent out of thicker films. Dill optical parameters at 365 nm (A=0.371 µm-1, B=0.075 µm-1, C=0.036 cm2/mJ) are published for lithography simulation. Etch resistance to common wet metal etchants (Au, Cu, Cr, Al) is explicitly claimed by the manufacturer. KemLab family SDS data (e.g. the sibling KL5300 MSDS) suggests a DNQ-novolak chemistry consistent with KL6000's product category, but no directly-verifiable KL6000-specific source was available, so no chemistry is claimed for this grade.", "developerFamily": "tmah", "provenance": { "datasheetUrl": "https://www.kemlab.com/_files/ugd/5b8579_d8f91ac120ea462bbe675ec4dcc00526.pdf", "datasheetVersionOrDate": "not stated — no revision or copyright date is printed anywhere in this TDS; the only certification mark present is an ISO 9001:2015 seal on the final page.", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "kl-ir", "name": "KL IR 15", "manufacturer": "KemLab, Inc.", "productLine": "KL IR series", "aliases": [ "KL IR", "KL IR 15", "KL-IR 15", "KemLab KL-IR", "KemLab KL IR 15", "KL IR 15 LIFTOFF", "KL IR 15 Lift-Off", "KemLab KL IR 15 LIFTOFF" ], "tone": "image-reversal", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet. KL IR 15 is presented as a dual-tone (image-reversal) resist for conventional binary patterning, not grayscale lithography.", "status": "active", "successorSlug": null, "summary": "A dual-tone image-reversal photoresist, processed as either positive or negative in i-line, g-line and broadband applications, 1.2-2.6 µm film thickness. In negative mode the reversal-bake temperature is the most process-critical parameter.", "thicknessRange": { "min_um": 1.2, "max_um": 2.6, "basis": "stated", "source": "stated — the TDS spec box (p.1): 'Film Thickness: 1.2 – 2.6' (microns)." }, "spinCurves": [ { "label": "KL IR 15", "points": [ { "rpm": 1000, "um": 2.6 }, { "rpm": 2000, "um": 1.75 }, { "rpm": 3000, "um": 1.45 }, { "rpm": 4000, "um": 1.28 }, { "rpm": 5000, "um": 1.15 } ], "source": "read from figure captioned 'Spin Curve' (referenced in text as Figure 3), p.2 of KL IR 15 TDS. Single unambiguous curve — only one grade/SKU is plotted, no multi-curve legend to disambiguate. Axis range (1.00-2.80 µm, 0-6000 rpm) and curve shape are consistent with the stated 1.2-2.6 µm film-thickness range.", "figureRead": true } ], "spinNotes": "Spin curve determined on 6-inch Si with static dispense of ~4 mL of KL IR 15 resist (TDS p.2, Coat). No spin ramp/accel profile or edge-bead-removal step is published. A closely related sibling SKU, KL IR LO 15 (lift-off variant, separate TDS, Rev 10-2023), publishes a similarly-shaped spin curve on the same axis scale but is a distinct product literature and was not used to source any value here.", "adhesion": { "hmds": true, "notes": "HMDS primer is recommended with oxide-forming substrates (Si, etc.); KL IR adheres to silicon, copper, gold, glass, aluminum and chromium (TDS p.1, Substrate Preparation, in both the Negative and Positive Resist Mode tables)." }, "rehydration": null, "softbake": { "temp_c": 105, "time_s": 90, "method": "hotplate", "notes": "Single softbake condition (105°C, 90 sec) is common to both positive-mode and negative-mode processing guidelines (TDS p.1-2).", "source": "Negative Resist Mode Processing Guidelines table, p.1, and Positive Resist Mode Processing Guidelines table, p.2 of KL IR 15 TDS" }, "exposureDose": { "doses": [], "basisCopy": "In reversal (negative) mode the image exposure is 120 mJ/cm² broadband before the reversal bake; used as a straight positive resist the only published figure is an approximate 70 mJ/cm² on a 1.5 µm film." }, "peb": { "temp_c": 115, "time_s": 60, "notes": "PEB applies only in Positive Resist Mode (115°C, 60 sec); Negative Resist Mode has no PEB step — it instead has a reversal bake.", "source": "Positive Resist Mode Processing Guidelines table, p.2 of KL IR 15 TDS" }, "floodExposure": { "reversalBake": { "temp_c": 130, "time_s": 120, "criticalTolerance": "±1°C — the TDS states: 'The most critical factor of the image reversal process is the reversal bake temperature. This critical temperature must be kept within ± 1°C to maintain stable processes' (p.2, Reversal Bake section). This is the single most process-sensitive parameter in the whole recipe.", "source": "Negative Resist Mode Processing Guidelines table, p.1, and Reversal Bake section, p.2 of KL IR 15 TDS" }, "flood": { "value_mJcm2": 150, "notes": "Flood exposure is explicitly NOT critical: 'The flood exposure is not critical to the process. 150 mJ/cm2 (broadband) is the processing guideline. Exposures between 150 - 300 mJ/cm² will not have a major effect on performance' (p.2). This document is internally consistent (table value 150 mJ/cm2 matches the narrative guideline exactly). Note for QC: the sibling KL IR LO 15 (lift-off variant) TDS states a DIFFERENT table value (200 mJ/cm2) for the same step while its own narrative text repeats the identical '150 mJ/cm2... 150-300 mJ/cm² will not have a major effect' language — i.e. that sibling document is internally INCONSISTENT (200 vs 150). That number was not used here; this recipe uses only the self-consistent KL IR 15 (non-LO) document.", "source": "Negative Resist Mode Processing Guidelines table, p.1, and Flood Exposure section, p.2 of KL IR 15 TDS" } }, "develop": { "developer": "0.26N TMAH", "dilution": null, "time_s": null, "timeRange_s": { "min": 45, "max": 60 }, "method": "puddle", "rinse": null, "source": "Negative Resist Mode Processing Guidelines table, p.1, and Positive Resist Mode Processing Guidelines table, p.2 of KL IR 15 TDS" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "Hardbake is optional and differs by tone mode: Positive Resist Mode table (p.2) gives 115°C, 60 sec; Negative Resist Mode table (p.1) gives 130°C, 60 sec. Both are quoted as printed — one figure cannot represent both modes.", "source": "Negative Resist Mode Processing Guidelines table, p.1, and Positive Resist Mode Processing Guidelines table, p.2 of KL IR 15 TDS" }, "descum": null, "applications": [ "image-reversal", "general-prototyping" ], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": null, "stripper": "KL Photoresist Remover, or industry-standard removers such as NMP or DMSO-based strippers, at 50-80°C (TDS p.1 spec box; p.3 Resist Removal); thicker films may benefit from a two-bath process — first bath removes bulk resist, second bath cleans thoroughly.", "storage": "Avoid light; store in an upright airtight container at 4-21°C, away from oxidizers, acids, bases and ignition sources (TDS p.3, Storage — the document's own wording says 'Keep developer away from oxidizers...', apparently a boilerplate carryover referring to the resist itself).", "notes": "KL IR 15 is a dual-tone image-reversal resist: exposed through a mask, it can be processed as either a positive resist (softbake -> exposure -> PEB at 115°C/60s -> develop -> optional 115°C/60s hardbake) or, via an added reversal bake and flood exposure, as a negative resist with the opposite tone (softbake -> exposure -> reversal bake at 130°C/120s -> flood exposure -> develop -> optional 130°C/60s hardbake). The reversal-bake temperature is explicitly called out by the manufacturer as the single most process-sensitive parameter (±1°C tolerance), while the flood exposure is explicitly non-critical over a 150-300 mJ/cm2 window — the opposite of the usual intuition that exposure dose is the sensitive knob. KemLab also sells a separate, distinct SKU, KL IR LO 15, whose own TDS (same Rev 10-2023 date) markets it specifically for lift-off-profile negative processing and states it 'can replace AZ 5214E'; the plain KL IR 15 datasheet used here makes no equivalent lift-off-profile claim. Negative mode is described as having 'excellent thermal stability' and being 'optimized for metallization processes.' Chemistry classified as dnq-novolak from the KemLab KL IR TDS's classic DNQ image-reversal process (reversal bake + flood exposure) and family SDS composition data (mixed cresol novolak resin + diazo photoactive compound).", "developerFamily": "tmah", "provenance": { "datasheetUrl": "https://www.kemlab.com/_files/ugd/5b8579_400cc3c492104ef283eb7ae601468096.pdf", "datasheetVersionOrDate": "Copyright 2023 © KemLab, Inc., Rev 10-2023", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.kemlab.com/_files/ugd/5b8579_45ff748fc0894fa094a12c113747f6ef.pdf", "what": "KemLab KL IR TDS shows the classic DNQ image-reversal process (reversal bake + flood exposure); the family SDS lists mixed cresol novolak resin + diazo photoactive compound, the basis for classifying KL IR as dnq-novolak." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "kmpr-1005", "name": "KMPR 1005", "manufacturer": "Kayaku Microchem (MicroChem)", "productLine": "KMPR 1000 series", "aliases": [ "KMPR® 1005", "MicroChem KMPR 1005", "Kayaku Microchem KMPR 1005", "KMPR 1000", "KMPR1000" ], "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed by the datasheet. The document markets the whole KMPR 1000 family exclusively for binary, high-aspect-ratio, vertical-sidewall structures (MEMS, electroplating molds, DRIE masks); it makes no mention of grayscale or partial-exposure profiling for any grade, including 1005.", "status": "active", "successorSlug": null, "summary": "KMPR 1005 is the thinnest grade of Kayaku Microchem/MicroChem's KMPR 1000 series, a chemically amplified, TMAH-developable, epoxy negative photoresist for thin (~5-10 µm) high-aspect-ratio MEMS, electroplating-mold, and DRIE-mask structures.", "thicknessRange": { "min_um": 5.1, "max_um": 9.7, "basis": "curve-span", "source": "curve-span: no single stated range is given for KMPR 1005 specifically (the intro text gives only a family-wide 4-120 µm range spanning all four KMPR 1000 viscosities — Table 1 lists 1005 as the lowest-viscosity grade at 95 cSt / 45% solids). The range here is the min/max of the KMPR 1005 traces read off BOTH published spin charts — Figure 1 (21°C US & EU: 5.1-9.7 µm, 4000-1000 rpm) and Figure 2 (23°C Japan & Asia: 5.8-9.4 µm, 4000-1000 rpm)." }, "spinCurves": [ { "label": "KMPR 1005", "points": [ { "rpm": 1000, "um": 9.7 }, { "rpm": 2000, "um": 7 }, { "rpm": 3000, "um": 5.8 }, { "rpm": 4000, "um": 5.1 } ], "source": "read from Figure 1 \"Spin speed vs. Thickness for KMPR® 1000 resists (21°C US & EU)\", p.2 of the Kayaku Microchem/MicroChem \"KMPR 1000 Chemically Amplified Negative Photoresist\" datasheet (Ver. 4.2) — one family document covering all four viscosities. The chart plots four curves (1050/filled square, 1025/filled diamond, 1010/filled circle, 1005/open square), each with 4 markers at 1000/2000/3000/4000 rpm. KMPR 1005 is the open-square (white fill, black stroke), lowest-thickness-at-every-rpm curve — consistent with its legend position (listed last) and Table 1's viscosity ordering (1005 = 95 cSt, the lowest of the four, so it coats thinnest at a given speed). No numeric table of these values is published, so this remains a figure read.", "figureRead": true }, { "label": "KMPR 1005 (23°C Japan & Asia)", "points": [ { "rpm": 1000, "um": 9.4 }, { "rpm": 2000, "um": 7.4 }, { "rpm": 3000, "um": 6.2 }, { "rpm": 4000, "um": 5.8 } ], "source": "read from Figure 2 \"Spin speed vs. Thickness for KMPR® 1000 resists (23°C Japan & Asia)\", p.2 of the same Kayaku Microchem/MicroChem \"KMPR 1000\" datasheet (Ver. 4.2). KMPR 1005 is again the open-square, lowest-thickness curve. A figure read, as above — no numeric table accompanies this chart either.", "figureRead": true } ], "spinNotes": "Recommended program: dispense 1 ml of resist per inch (25 mm) of substrate diameter; spin at 500 rpm for 5-10 s at 100 rpm/s acceleration, then spin at the target speed for 30 s at 300 rpm/s acceleration. The document publishes TWO spin curves for the same four resists at two different ambient conditions: Figure 1 (21°C, US & EU) and Figure 2 (23°C, Japan & Asia) — the curves are not identical for KMPR 1005 either (e.g. ~9.7 µm at 1000 rpm on the US/EU curve vs. ~9.4 µm on the Japan/Asia curve), a reminder that spin results are sensitive to coat-bowl ambient temperature/humidity and should be recharacterized on-tool. Source: \"Coat\" / \"Recommended Program\", p.1, and Figures 1-2, p.2.", "adhesion": { "hmds": false, "notes": "\"Adhesion promoters are typically not required.\" HMDS pretreatment (MCC Primer 80/20) is recommended \"for applications that require electroplating\" — and the document's own Plating process recipe lists HMDS as its first step. This guidance is stated generically for the KMPR 1000 family, not per-grade. Source: \"Substrate Preparation\", p.1, and \"Plating\", p.3." }, "rehydration": null, "softbake": { "temp_c": 100, "time_s": 300, "method": "hotplate", "notes": "Recommended bake temperature is 100°C (95-105°C also usable, per text). Time is published as a THICKNESS-BINNED table (Table 2): 5-11 µm → 5 min; 12-20 µm → 7 min; 21-30 µm → 12 min; 31-55 µm → 15 min; 56-80 µm → 20 min. KMPR 1005's entire thickness range (~5.1-9.7 µm across both spin charts) falls inside the first bin, so a single unambiguous time applies across the whole grade: 5 minutes at 100°C (unlike kmpr-1050, whose range spans multiple bins and its own thick end exceeds the table). Convection ovens are explicitly not recommended — a skin can form and trap solvent. A cool-down/re-heat 'wrinkle' check is described to confirm the film is fully dry before exposure.", "source": "Table 2 \"Soft Bake Times\" and \"Soft Bake\" section text, p.2" }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "spun-film", "bins": [ { "um_min": 5, "um_max": 11, "mJ_min": 235, "mJ_max": 335 } ], "source": "Table 3 'Exposure Dose' of the Kayaku Microchem/MicroChem KMPR 1000 datasheet (Ver. 4.2). Only the 5-11 µm bin is carried here — it covers KMPR 1005's entire spin-curve thickness range. The table is not attributed to a specific wavelength." } ], "basisCopy": "KMPR 1005 never leaves the table's first bin: its whole coating range sits inside 5–11 µm, dosed at 235–335 mJ/cm² on silicon. Glass and metals need 1.5× to 2× that." }, "peb": { "temp_c": 100, "time_s": 120, "notes": "Recommended PEB temperature is 100°C (95-105°C also usable, per text). Time follows a thickness-threshold rule: ≤25 µm → 2 minutes; >25 µm → 3 minutes; >50 µm → 4 minutes. KMPR 1005's entire thickness range (~5.1-9.7 µm) is well under the 25 µm threshold, so a single unambiguous value applies (unlike kmpr-1050, whose range straddles both thresholds). After 1 minute of PEB a latent mask image should already be visible; none appearing means insufficient exposure and/or heat.", "source": "\"Post Exposure Bake (PEB)\" section text, p.3" }, "floodExposure": null, "develop": { "developer": "2.38% TMAH (0.26N) aqueous alkaline developer (primary); SU-8 Developer (solvent-based) is also usable as an alternative", "dilution": "2.38% TMAH (0.26N), used at this standard concentration (not diluted from a stock in the document)", "time_s": 180, "method": "immersion", "rinse": "DI water, ~20 s spray rinse, then filtered air/N2 dry (TMAH path). If the optional SU-8-developer alternative is used instead, rinse is ~10 s fresh developer spray then ~10 s IPA spray, per the SU-8-developer note.", "source": "\"Develop\" and \"Rinse and Dry\" sections plus Table 5 (TMAH) and Table 6 (SU-8 developer), p.3" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "The datasheet contains no general Hard Bake process step at all — no recommended temperature or time is published anywhere in the document (unlike the sibling SU-8 2000 datasheets, which have a dedicated Hard Bake section). It explicitly states, for the electroplating process specifically: \"Hard bake is NOT REQUIRED OR RECOMMENDED for plating resistance.\"", "source": "\"Plating\" section note, p.3" }, "descum": null, "applications": [ "high-aspect-ratio", "mems-structural", "electroplating-molding", "etch-mask" ], "etchResistance": "Listed as a Feature: \"Excellent dry etch resistance.\" Demonstrated in an application photo (\"Etched Trenches\", 10 µm features, 65 µm deep, credited to ULVAC) consistent with use as a DRIE (deep reactive ion etch) mask. No quantitative etch rate or selectivity numbers are published, and the photo is not attributed to a specific grade. Source: \"Features\" list and application photos, p.1.", "liftoffSuitable": false, "platingSuitable": true, "stripper": "MicroChem Remover PG (NMP): heat bath to 80°C, immerse substrate 10-20 minutes (actual time depends on resist thickness and agitation, e.g. ultrasound). For fully electroformed metal structures, a stronger sequence is given: Remover PG 10 min @80°C → DIW rinse → XP Remover K (epoxy stripping chemistry) 10 min @80°C → DIW rinse → XP Neutralizer K 3 min @25°C. Plasma removal: RIE 200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10°C. Source: \"Removal\" / \"Process Recommendation\" / \"Plasma Removal\", p.3.", "storage": "Store frozen, in tightly closed, upright containers, at 14°F (-10°C), away from light, heat, acids, and ignition sources. Shelf life is twelve months at 14°F (-10°C), but typically only one to two months at room temperature. Defrost at room temperature for 24 hours before use. Source: \"Storage\", p.4.", "notes": "KMPR 1005 is the lowest-viscosity, thinnest-coating grade in Kayaku Microchem/MicroChem's KMPR 1000 line (95 cSt / 45% solids, per Table 1) — the thin-film complement to kmpr-1050.json's thick-mold grade already in this library. Unlike the solvent-developed SU-8 2000 family, it is a chemically amplified epoxy resist designed to develop in aqueous TMAH — a meaningful process difference worth flagging for anyone assuming all thin epoxy negative resists behave like SU-8. Because its entire thickness range (~5.1-9.7 µm) sits inside the datasheet's first thickness bin (5-11 µm), the soft-bake, exposure-dose and TMAH-develop tables all resolve to a single unambiguous number for this grade — a notably cleaner situation than kmpr-1050, whose thick end runs past every published table. A distinctive storage gotcha carries over from the family datasheet: KMPR 1000 resists must be stored frozen (14°F/-10°C) and require a full 24-hour room-temperature thaw before use — treating it like a room-temperature-stable resist will produce inconsistent films. The resist strips cleanly with Remover PG when only lightly cross-linked; a fully electroformed/plated structure needs the stronger Remover PG → XP Remover K → XP Neutralizer K sequence.", "developerFamily": "tmah-or-solvent", "references": [], "provenance": { "datasheetUrl": "https://www.seas.upenn.edu/~nanosop/documents/KMPRDataSheetver4_2a.pdf", "datasheetVersionOrDate": "Ver. 4.2 (printed in the footer of every page: \"Ver. 4.2\")", "accessedDate": "2026-07-22", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-22", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "kmpr-1050", "name": "KMPR 1050", "min_um": 34, "max_um": 115, "doseBasis": null } ], "humanVerified": false }, { "slug": "kmpr-1050", "name": "KMPR 1050", "manufacturer": "Kayaku Microchem (MicroChem)", "productLine": "KMPR 1000 series", "aliases": [ "KMPR® 1050", "MicroChem KMPR 1050", "Kayaku Microchem KMPR 1050" ], "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed by the datasheet. The document markets KMPR 1000 exclusively for binary, high-aspect-ratio, vertical-sidewall structures (MEMS, electroplating molds, DRIE masks); it makes no mention of grayscale or partial-exposure profiling.", "status": "active", "successorSlug": null, "summary": "KMPR 1050 is the highest-viscosity grade of Kayaku Microchem/MicroChem's KMPR 1000 series, a chemically amplified, TMAH-developable, epoxy-based negative photoresist built for thick, high-aspect-ratio MEMS, electroplating-mold, and DRIE-mask structures.", "thicknessRange": { "min_um": 34, "max_um": 115, "basis": "curve-span", "source": "curve-span: no single stated range is given for KMPR 1050 specifically (the intro text gives only a family-wide 4-120 µm range spanning all four KMPR 1000 viscosities). The range here is the min/max of the KMPR 1050 traces across BOTH published spin charts — Figure 1 (21°C US & EU: 44-101 µm, 4000-1000 rpm) and Figure 2 (23°C Japan & Asia: 34-115 µm, 4000-1000 rpm)." }, "spinCurves": [ { "label": "KMPR 1050", "points": [ { "rpm": 1000, "um": 101 }, { "rpm": 2000, "um": 68 }, { "rpm": 3000, "um": 51 }, { "rpm": 4000, "um": 44 } ], "source": "read from figure 1 \"Spin speed vs. Thickness for KMPR 1000 resists (21°C US & EU)\", p.2 of the Kayaku Microchem/MicroChem \"KMPR 1000 Chemically Amplified Negative Photoresist\" datasheet (Ver. 4.2, UPenn nanoSOP mirror). Chart plots four curves (KMPR 1050/filled square, 1025/filled diamond, 1010/filled circle, 1005/open square), each with 4 markers at 1000/2000/3000/4000 rpm. The KMPR 1050 curve is the filled-square series and the topmost (thickest-film) curve at every rpm, consistent with its legend position (listed first) and Table 1's viscosity ordering (1050 = 13,000 cSt, the highest of the four, so it coats thickest at a given speed). A figure read, not a numeric table — no per-rpm table for this grade is published.", "figureRead": true }, { "label": "KMPR 1050 (23°C Japan & Asia)", "points": [ { "rpm": 1000, "um": 115 }, { "rpm": 2000, "um": 67 }, { "rpm": 3000, "um": 47 }, { "rpm": 4000, "um": 34 } ], "source": "read from Figure 2 \"Spin speed vs. Thickness for KMPR® 1000 resists (23°C Japan & Asia)\", p.2 of the Kayaku Microchem/MicroChem \"KMPR 1000 Chemically Amplified Negative Photoresist\" datasheet (Ver. 4.2, UPenn nanoSOP mirror). The chart plots four curves (KMPR 1050/filled square, 1025/filled diamond, 1010/filled circle, 1005/open square), each with 4 markers at 1000/2000/3000/4000 rpm. KMPR 1050 is the filled-square series and the topmost (thickest-film) curve at every rpm, consistent with its legend position (listed first) and Table 1's viscosity ordering (1050 = 13,000 cSt, the highest of the four). A figure read — no numeric table of these values is published.", "figureRead": true } ], "spinNotes": "Recommended program: dispense 1 ml of resist per inch (25 mm) of substrate diameter; spin at 500 rpm for 5-10 s at 100 rpm/s acceleration, then spin at the target speed for 30 s at 300 rpm/s acceleration. The document publishes TWO spin curves for the same four resists at two different ambient conditions: Figure 1 (21°C, US & EU) and Figure 2 (23°C, Japan & Asia) — the curves are not identical (e.g. KMPR 1050 at 1000 rpm reads ~101 µm in Figure 1 vs. ~115 µm in Figure 2), a reminder that spin results are sensitive to coat-bowl ambient temperature/humidity and should be recharacterized on-tool. Both curves are plotted above: Figure 1 (21°C US & EU) as the primary curve and Figure 2 (23°C Japan & Asia) as a second series. Source: \"Coat\" / \"Recommended Program\", p.1, and Figures 1-2, p.2.", "adhesion": { "hmds": false, "notes": "\"Adhesion promoters are typically not required.\" HMDS pretreatment (MCC Primer 80/20) is recommended \"for applications that require electroplating\" — and the document's own Plating process recipe lists HMDS as its first step. Source: \"Substrate Preparation\", p.1, and \"Plating\", p.3." }, "rehydration": null, "softbake": { "temp_c": 100, "time_s": null, "method": "hotplate", "notes": "Recommended bake temperature is 100°C (95-105°C also usable, per text) — this scalar temperature is explicit in the document. Time is published as a THICKNESS-BINNED table only up to 80 µm: 5-11 µm → 5 min; 12-20 µm → 7 min; 21-30 µm → 12 min; 31-55 µm → 15 min; 56-80 µm → 20 min. KMPR 1050's own spin curve (Figure 1) reaches 101 µm at 1000 rpm, i.e. above the table's published range — the datasheet does not give a soft-bake time for film thicker than 80 µm at all, so no time is assumed for the thick end of this grade's range. Convection ovens are explicitly not recommended. A cool-down/re-heat 'wrinkle' check is described to confirm the film is fully dry.", "source": "Table 2 \"Soft Bake Times\" and \"Soft Bake\" section text, p.2" }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "spun-film", "bins": [ { "um_min": 5, "um_max": 11, "mJ_min": 235, "mJ_max": 335 }, { "um_min": 12, "um_max": 20, "mJ_min": 355, "mJ_max": 485 }, { "um_min": 21, "um_max": 30, "mJ_min": 500, "mJ_max": 645 }, { "um_min": 31, "um_max": 55, "mJ_min": 665, "mJ_max": 1055 }, { "um_min": 56, "um_max": 80, "mJ_min": 1070, "mJ_max": 1465 } ], "source": "Table 3 'Exposure Dose' of the Kayaku Microchem/MicroChem KMPR 1000 datasheet (Ver. 4.2). The published table stops at 80 µm — no dose is given above that, which is inside KMPR 1050's own coating range. Not attributed to a specific wavelength." } ], "basisCopy": "Dose climbs hard with thickness — 235–335 mJ/cm² at 5–11 µm, 1070–1465 mJ/cm² at 56–80 µm — and then the table stops at 80 µm, while this grade coats up to 101 µm at 1000 rpm." }, "peb": { "temp_c": 100, "time_s": null, "notes": "Recommended PEB temperature is 100°C (95-105°C also usable, per text). Time is given as a THICKNESS-THRESHOLD rule rather than a table: ≤25 µm → 2 minutes; >25 µm → 3 minutes; >50 µm → 4 minutes. KMPR 1050's own thickness range (44-101 µm, Figure 1) straddles the 25 µm and 50 µm thresholds, so no single time applies across the whole grade — use the threshold matching the film actually coated. After 1 minute of PEB a latent mask image should already be visible; none appearing means insufficient exposure and/or heat.", "source": "\"Post Exposure Bake (PEB)\" section text, p.3" }, "floodExposure": null, "develop": { "developer": "2.38% TMAH (0.26N) aqueous alkaline developer (primary); SU-8 Developer (solvent-based) is also usable as an alternative", "dilution": "2.38% TMAH (0.26N), used at this standard concentration (not diluted from a stock in the document)", "time_s": null, "method": "immersion", "rinse": "DI water, ~20 s spray rinse, then filtered air/N2 dry (TMAH path). If the optional SU-8-developer alternative is used instead, rinse is ~10 s fresh developer spray then ~10 s IPA spray, per the SU-8-developer note.", "source": "\"Develop\" and \"Rinse and Dry\" sections plus Table 5 (TMAH) and Table 6 (SU-8 developer), p.3" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "The datasheet contains no general Hard Bake process step at all — no recommended temperature or time is published anywhere in the document (unlike the sibling SU-8 2000 datasheets, which have a dedicated Hard Bake section). It explicitly states, for the electroplating process specifically: \"Hard bake is NOT REQUIRED OR RECOMMENDED for plating resistance.\"", "source": "\"Plating\" section note, p.3" }, "descum": null, "applications": [ "high-aspect-ratio", "mems-structural", "electroplating-molding", "etch-mask" ], "etchResistance": "Listed as a Feature: \"Excellent dry etch resistance.\" Demonstrated in an application photo (\"Etched Trenches\", 10 µm features, 65 µm deep, credited to ULVAC) consistent with use as a DRIE (deep reactive ion etch) mask. No quantitative etch rate or selectivity numbers are published. Source: \"Features\" list and application photos, p.1.", "liftoffSuitable": false, "platingSuitable": true, "stripper": "MicroChem Remover PG (NMP): heat bath to 80°C, immerse substrate 10-20 minutes (actual time depends on resist thickness and agitation, e.g. ultrasound). For fully electroformed metal structures, a stronger sequence is given: Remover PG 10 min @80°C → DIW rinse → XP Remover K (epoxy stripping chemistry) 10 min @80°C → DIW rinse → XP Neutralizer K 3 min @25°C. Plasma removal: RIE 200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10°C. Source: \"Removal\" / \"Process Recommendation\" / \"Plasma Removal\", p.3.", "storage": "Store frozen, in tightly closed, upright containers, at 14°F (-10°C), away from light, heat, acids, and ignition sources. Shelf life is twelve months at 14°F (-10°C), but typically only one to two months at room temperature. Defrost at room temperature for 24 hours before use. Source: \"Storage\", p.4.", "notes": "KMPR 1050 is the thickest-coating grade in Kayaku Microchem/MicroChem's KMPR 1000 line and, unlike the solvent-developed SU-8 2000 family, is a chemically amplified epoxy resist designed to develop in aqueous TMAH — a meaningful process difference worth flagging for anyone assuming all thick epoxy negative resists behave like SU-8. Its published process tables (soft bake, exposure dose, TMAH develop time) only cover film thicknesses up to 80 µm, while KMPR 1050's own spin curve reaches roughly 101 µm at 1000 rpm; process engineers working at the thick end of this grade's range will need to extrapolate or characterize on-tool, since the datasheet simply does not publish numbers there. PEB time follows a thickness-threshold rule (2/3/4 minutes at 25/50 µm cutoffs) rather than a continuous table. A distinctive storage gotcha: KMPR 1000 resists must be stored frozen (14°F/-10°C) and require a full 24-hour room-temperature thaw before use — treating it like a room-temperature-stable resist will produce inconsistent films. The resist strips cleanly with Remover PG when only lightly cross-linked, but a fully electroformed/plated structure needs the stronger Remover PG → XP Remover K → XP Neutralizer K sequence to fully dissolve.", "developerFamily": "tmah-or-solvent", "references": [ { "type": "paper", "title": "Fabrication of thick electroforming micro mould using a KMPR negative tone photoresist", "authors": "Lee et al.", "journal": "Journal of Micromechanics and Microengineering", "year": 2008, "doi": "10.1088/0960-1317/18/5/055032", "url": "https://doi.org/10.1088/0960-1317/18/5/055032", "accessedDate": "2026-07-15", "summary": "180 µm, 18:1 KMPR molds — strippable, unlike SU-8." }, { "type": "paper", "title": "UV Lithography and Molding Fabrication of Ultrathick Micrometallic Structures Using a KMPR Photoresist", "authors": "Shin et al.", "journal": "Journal of Microelectromechanical Systems", "year": 2010, "doi": "10.1109/JMEMS.2010.2045880", "url": "https://doi.org/10.1109/JMEMS.2010.2045880", "accessedDate": "2026-07-15", "summary": "KMPR molds for mm-wave traveling-wave-tube structures." } ], "troubleshooting": [ { "q": "Why don't the KMPR 1050 process tables cover my film thickness?", "a": "KMPR 1050 coats to roughly 101 µm at 1000 rpm (115 µm on the 23°C curve), but the datasheet's soft-bake, exposure-dose and TMAH-develop tables stop at 80 µm. Above that there simply are no published numbers, so at the thick end of this grade you must extrapolate the trend and characterize on-tool rather than read a value off the sheet.", "source": "Kayaku Microchem KMPR 1000 datasheet (Ver. 4.2) — Tables 2, 3 and 5, p.2–3" }, { "q": "What post-exposure bake does KMPR 1050 need?", "a": "PEB is at 100°C (95–105°C usable) on a hotplate, with time set by a thickness-threshold rule rather than a table: 2 min at ≤25 µm, 3 min above 25 µm and 4 min above 50 µm. KMPR 1050's 44–101 µm range straddles both thresholds, so choose by your actual film. A latent mask image should already be visible after about 1 min of PEB; if none appears, exposure or heat was insufficient.", "source": "Kayaku Microchem KMPR 1000 datasheet (Ver. 4.2) — Post Exposure Bake (PEB), p.3" }, { "q": "Why is my KMPR 1050 film wrinkling or not fully drying on soft bake?", "a": "Soft bake at 100°C on a level hotplate — convection ovens are explicitly not recommended, since a skin can trap solvent. Published times are thickness-binned up to 80 µm (e.g. 15 min for 31–55 µm, 20 min for 56–80 µm). Use the datasheet's cool-down/re-heat 'wrinkle' check to confirm the film is fully dry before exposure.", "source": "Kayaku Microchem KMPR 1000 datasheet (Ver. 4.2) — Table 2 Soft Bake Times and Soft Bake section, p.2" }, { "q": "Does KMPR 1050 need an adhesion promoter?", "a": "Adhesion promoters are typically not required. The exception is electroplating: HMDS pretreatment (MCC Primer 80/20) is recommended for plating applications, and the datasheet's own plating recipe lists HMDS as its first step. Note plated structures also change how the resist strips — a fully electroformed part needs the Remover PG → XP Remover K → XP Neutralizer K sequence.", "source": "Kayaku Microchem KMPR 1000 datasheet (Ver. 4.2) — Substrate Preparation and Plating, p.1 & p.3" } ], "provenance": { "datasheetUrl": "https://www.seas.upenn.edu/~nanosop/documents/KMPRDataSheetver4_2a.pdf", "datasheetVersionOrDate": "Ver. 4.2 (printed in the footer of every page: \"Ver. 4.2\")", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "kmpr-1005", "name": "KMPR 1005", "min_um": 5.1, "max_um": 9.7, "doseBasis": null } ], "humanVerified": false }, { "slug": "lor-3a", "name": "LOR 3A", "manufacturer": "Kayaku Advanced Materials", "productLine": "LOR A series", "aliases": [ "LOR3A", "LOR-3A", "MicroChem LOR 3A" ], "tone": null, "toneNote": "LOR 3A is a non-photoimageable lift-off underlayer, not an imaging photoresist — it is never itself exposed, so 'tone' does not apply. Calling it 'positive' is a common but incorrect shorthand: LOR is not a dissolution-inhibition/exposure-based system at all.", "chemistry": "ancillary", "grayscaleSuitable": false, "grayscaleNote": "Not applicable — LOR is a non-photoimageable underlayer; grayscale/continuous-tone relief is an imaging-resist property that has no meaning for a layer that is never exposed.", "status": "active", "successorSlug": null, "summary": "LOR 3A is a thin grade (~0.28–0.57 µm) of Kayaku/MicroChem's PMGI-based LOR-A lift-off underlayers — a non-photoimageable film spun beneath an imaging resist that dissolves isotropically on development to form the undercut profile for clean metal lift-off.", "thicknessRange": { "min_um": 0.28, "max_um": 0.567, "basis": "curve-span", "source": "curve-span: the LOR/PMGI datasheet (Rev. A) states only a whole-product-line figure (\"Film thicknesses for depositions from <20nm - >5µm\", Benefits, p.1) spanning every LOR/PMGI grade, not an LOR 3A-specific achievable range. min/max are the span of this recipe's own LOR 3A spin curve off the 'Spin Speed vs Thickness - Intermediate Films' chart, p.5 (the LOR 3A/3B trace plots 4 markers only, 1000-4000 rpm)." }, "thicknessRangeNote": "Approximate range read off manufacturer spin-curve figures over roughly 1000-5000 rpm (the spin curve above). No numeric thickness-vs-speed table specific to LOR 3A was found in either primary datasheet obtained — only plotted curves.", "spinCurves": [ { "label": "LOR 3A", "points": [ { "rpm": 1000, "um": 0.567 }, { "rpm": 2000, "um": 0.402 }, { "rpm": 3000, "um": 0.335 }, { "rpm": 4000, "um": 0.28 } ], "source": "read from the combined 'LOR 3A, LOR 3B' trace (black diamond markers) in the 'Spin Speed vs Thickness – Intermediate Films' chart, p.5 of the Kayaku/MicroChem 'LOR and PMGI Resists' datasheet (Rev. A). The chart plots exactly 4 markers for this trace (1000/2000/3000/4000 rpm) — there is no data at 500, 1500, 2500, 4500 or 5000 rpm. Neither this datasheet nor MicroChem's 2002 flyer publishes a numeric table isolating LOR 3A alone, so this is a figure read (±10% uncertainty). Treat as approximate; scrutinise before relying on it for a critical process.", "figureRead": true } ], "spinNotes": "Recommended baseline coating parameters (Table 1, applies across the LOR/PMGI line, not LOR 3A-specific): dispense 5 mL for a 150 mm wafer, dynamic dispense 3-5 s at 300-500 rpm, acceleration 10,000 rpm/s, terminal spin speed 3,000 rpm held for 45 s, edge-bead removal with EBR PG. Spin speeds of 2,500-4,500 rpm give maximum coating uniformity (higher speeds for smaller substrates, lower for larger/topographic ones). Acetone and conventional resist edge-bead removers are explicitly NOT recommended with LOR (causes precipitation) — use EBR PG.", "adhesion": { "hmds": false, "notes": "HMDS priming is explicitly stated as typically NOT required to promote adhesion with LOR/PMGI products. LOR exhibits excellent inherent adhesion to Si, glass, NiFe, GaAs, InP and other III-V/II-VI materials, and Au. Substrate prep: solvent clean or dilute-acid rinse followed by DI water rinse, then a dehydration bake at 200°C for 5 min (contact hotplate) or 30 min (convection oven) immediately before coating." }, "rehydration": null, "softbake": { "temp_c": 180, "time_s": 180, "method": "hotplate", "notes": "180°C for 3 min is the specific bake condition the manufacturer states was used to generate its own published spin-curve/optical-constant data ('Products were soft-baked at 180°C for 3 min', Technical Data section). It is not published as 'the' single recommended production bake. The datasheet's general recommended prebake range is 150-200°C (hotplate preferred, oven-compatible; some PMGI grades up to 250°C) — no single fixed time is prescribed for LOR 3A, because prebake temperature is the dominant control lever for undercut rate and is meant to be tuned experimentally (a temperature/time matrix) against the target undercut, developer choice, and develop time. An earlier (2002) MicroChem flyer for the LOR-A series quotes a narrower 150-190°C recommended range.", "source": "Technical Data section note (p.5) and 'Soft-bake/Prebake Process' section (p.3), Kayaku/MicroChem 'LOR and PMGI Resists' datasheet Rev. A" }, "exposureDose": { "doses": [] }, "peb": { "temp_c": null, "time_s": null, "notes": "Not applicable. The datasheet states explicitly: 'LOR/PMGI does not require post-exposure baking... Refer to patterning resist manufacturer process recommendations to determine whether a PEB step is required' (i.e. any PEB is for the top imaging resist, not LOR).", "source": "'Post-Exposure (PEB) Process' section, p.4, Kayaku/MicroChem 'LOR and PMGI Resists' datasheet Rev. A" }, "floodExposure": { "dose_mJcm2": null, "notes": "Not required for the standard LOR bilayer lift-off process (no extra flood exposure, develop, amine treatment, or toxic soak steps needed). A deep-UV (240-290 nm) flood-exposure 'Cap-On' process exists in the same datasheet for straighter sidewalls, but it is described specifically for PMGI, not for LOR/LOR 3A.", "source": "'Benefits' list and 'Application and Processing the Patterning Resist Layer' section, Kayaku/MicroChem 'LOR and PMGI Resists' datasheet Rev. A" }, "develop": { "developer": "0.26N (2.38%) TMAH metal-ion-free developer — e.g. Shipley/Rohm and Haas CD-26 or TOK NMD-3 — is the developer class the LOR-A series (including LOR 3A) is optimized for; the LOR-B series is instead optimized for lower-normality/metal-ion-bearing developers such as AZ 400K 1:4 or Shipley MF-319.", "dilution": "ready-to-use (as supplied)", "time_s": null, "method": "immersion (spray development is recommended instead for thick, >2 µm LOR/PMGI stacks, for straighter sidewalls)", "rinse": "DI water", "source": "'Development Process' section (p.4) and Product Selection Guide (p.6), Kayaku/MicroChem 'LOR and PMGI Resists' datasheet Rev. A. Develop time is explicitly not published as a single fixed number — the datasheet states it depends on the combined thickness of the LOR/PMGI layer and the patterning resist layer, and on the desired undercut (see undercut-rate figures); it must be set experimentally, not read off a table." }, "hardbake": null, "hardbakeNote": "No hardbake step is described for LOR in either primary datasheet — the process proceeds directly from development to metal deposition to lift-off.", "descum": "Not required. The datasheet states no intermixing occurs between LOR and the imaging resist above it, so the bilayer stack does not need a plasma descum step between coating the LOR layer and the patterning resist.", "applications": [ "lift-off" ], "etchResistance": null, "liftoffSuitable": true, "platingSuitable": null, "stripper": "MicroChem/Kayaku Remover-PG is the recommended stripper; baseline two-tank process at 60°C for 30 min per tank, optionally ultrasonic-assisted to improve strip efficiency (actual time varies with prebake temperature, step coverage, and resist profile). Acetone will NOT dissolve or remove LOR — keep acetone (and PGMEA, ethyl-lactate) waste streams separate, as LOR precipitates in these solvents and can clog lines.", "storage": "Store upright in original sealed containers in a dry area between 4-27°C (40-80°F), away from ignition sources, light, heat, oxidants, acids, and reducers. Do not use past the expiration date (1 year from date of manufacture). Recommended processing environment: 20-25°C ± 1°C, 35-45% ± 2% relative humidity.", "notes": "LOR 3A is not a photoresist in the imaging sense — it is a non-photoimageable PMGI underlayer that is coated and soft-baked beneath a conventional imaging resist, which alone is exposed and developed. During development the LOR layer dissolves isotropically (laterally undercutting beneath the imaged top resist), producing the re-entrant sidewall profile a clean bilayer lift-off requires. Undercut amount is set primarily by LOR soft-bake temperature — higher bake temperature lowers the dissolution rate and reduces undercut for a given develop time; the manufacturer's own bar-chart data (0.26N TMAH/CD-26 developer) give LOR-A-class undercut rates of 42 Å/s at 190°C, 67 Å/s at 170°C, and 111 Å/s at 150°C (recommended bake range 150-200°C). This rate is published for the 'LOR A' class as a whole (which LOR 3A belongs to), not broken out for the 3A sub-grade specifically. Secondary levers are prebake time, developer choice/normality, develop mode, and develop time (increasing develop time increases undercut for otherwise fixed bake conditions). HMDS priming is explicitly not required. For clean lift-off, LOR film thickness should exceed the deposited metal thickness, by roughly 25-33% per the two primary datasheets (guidance differs slightly: 'typically 1.2 to 1.3 times' the metal thickness in the 2002 flyer vs. 'typically by 25%' in the later Rev. A datasheet).", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "A lift-off process for high resolution patterns using PMMA/LOR resist stack", "authors": "Chen et al.", "journal": "Microelectronic Engineering", "year": 2004, "doi": "10.1016/j.mee.2004.02.053", "url": "https://doi.org/10.1016/j.mee.2004.02.053", "accessedDate": "2026-07-15", "summary": "Demonstrates sub-100 nm lift-off patterns using a PMMA/LOR bilayer resist stack, exploiting the controlled LOR undercut.", "note": "The paper uses the LOR underlayer line generically in a PMMA/LOR stack; cited here for LOR 3A." } ], "troubleshooting": [ { "q": "Is LOR 3A photosensitive?", "a": "No. LOR 3A is a non-photoimageable PMGI-based lift-off underlayer — it is never itself exposed. It is spin-coated beneath a conventional imaging resist, and only that top resist is patterned by light. During development the LOR layer dissolves isotropically, undercutting laterally beneath the imaged resist to form the re-entrant profile a clean bilayer lift-off needs. Any PEB in the flow is for the top imaging resist, not for LOR.", "source": "Kayaku/MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Post-Exposure (PEB) Process section, p.4" }, { "q": "How do I control the undercut for lift-off with LOR 3A?", "a": "Undercut is set primarily by LOR soft-bake temperature: a higher bake lowers the dissolution rate and reduces undercut for a given develop time. The manufacturer's LOR-A-class data (0.26N TMAH / CD-26) give undercut rates of about 42 Å/s at 190 °C, 67 Å/s at 170 °C and 111 Å/s at 150 °C (recommended bake range 150–200 °C). Secondary levers are prebake time, developer choice, develop mode and develop time. These rates are published for the LOR-A class, not broken out for the 3A grade.", "source": "Kayaku/MicroChem 'LOR and PMGI Resists' datasheet Rev. A (LOR-A undercut-rate data, 0.26N TMAH developer)" }, { "q": "Which developer does LOR 3A use?", "a": "The LOR-A series (including LOR 3A) is optimized for 0.26N (2.38%) TMAH metal-ion-free developer — e.g. CD-26 or TOK NMD-3 — used as supplied, with a DI water rinse. Immersion is standard; spray development is recommended for thick (>2 µm) LOR/PMGI stacks. Develop time is not published as a single number: it depends on the combined LOR + imaging-resist thickness and the desired undercut, and must be set experimentally.", "source": "Kayaku/MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Development Process p.4 + Product Selection Guide p.6" }, { "q": "Can I strip LOR 3A with acetone?", "a": "No. Acetone will not dissolve or remove LOR — use Kayaku/MicroChem Remover PG (baseline two-tank process, 60 °C for 30 min per tank, optionally ultrasonic-assisted). Keep acetone, PGMEA and ethyl-lactate waste streams separate, since LOR precipitates in these solvents and can clog lines.", "source": "Kayaku/MicroChem 'LOR and PMGI Resists' datasheet Rev. A (stripper: Remover PG; acetone incompatible)" }, { "q": "Does LOR 3A need HMDS priming?", "a": "No. HMDS priming is explicitly stated as typically not required with LOR/PMGI. LOR has excellent inherent adhesion to Si, glass, NiFe, GaAs, InP and Au. Recommended substrate prep is a solvent clean or dilute-acid rinse, a DI water rinse, then a dehydration bake at 200 °C (5 min on a contact hotplate, or 30 min in a convection oven) immediately before coating.", "source": "Kayaku/MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Substrate preparation" } ], "provenance": { "datasheetUrl": "https://apps.mnc.umn.edu/pub/pds/lor.pdf", "datasheetVersionOrDate": "Kayaku/MicroChem 'LOR and PMGI Resists', Rev. A (undated on the document itself); cross-checked against the earlier MicroChem 'LOR™ Lift-Off Resists' flyer, © MicroChem Corp. 2002, mirrored at https://amolf.nl/wp-content/uploads/2016/09/datasheets_LOR_datasheet.pdf. The current kayakuam.com-hosted PDF (https://kayakuam.com/wp-content/uploads/2023/06/KAM-LOR-PMGI-Datasheet-4.30.24-final-1.pdf, dated 4/30/24 per its filename) returned HTTP 403 and could not be fetched directly; the two documents actually read are university-hosted mirrors of the same manufacturer-authored content.", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://bionium.miami.edu/_assets/pdf/lor-3a-photoresist-process.pdf", "what": "University of Miami cleanroom process recipe for LOR 3A — used only to corroborate typical practical parameters (180°C/5min softbake, 3000rpm/35s spin, CD-26 60-90s or MF-319 45-60s develop), not as a primary numeric source" }, { "url": "https://cns1.rc.fas.harvard.edu/facilities/docs/SOP112_r1_1_%20LOR.pdf", "what": "Harvard CNS SOP112 lift-off processing procedure — used only to corroborate typical bake (180°C/4min) and CD-26 develop (75s) practice, and to confirm HMDS is not used with LOR; not a primary numeric source" } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "photoimageable": false, "familySiblings": [ { "slug": "lor-5a", "name": "LOR 5A", "min_um": 0.47, "max_um": 0.98, "doseBasis": null } ], "humanVerified": false }, { "slug": "lor-5a", "name": "LOR 5A", "manufacturer": "MicroChem (MCC) — now Kayaku Advanced Materials", "productLine": "LOR A series", "aliases": [ "LOR5A", "MicroChem LOR 5A", "Kayaku LOR 5A" ], "tone": null, "chemistry": "ancillary", "photoimageable": false, "grayscaleSuitable": false, "grayscaleNote": "Not applicable and not addressed by the document. LOR 5A is not photoimageable and carries no exposure dose; the datasheet states 'LOR or PMGI does not require an exposure step' in the standard bi-layer lift-off process (p.4), so dose-modulated grayscale profiling — which requires a photoimageable resist — cannot apply to this material.", "status": "active", "successorSlug": null, "summary": "LOR 5A is a mid-thickness grade (~0.47–0.98 µm) of MicroChem/Kayaku's PMGI-based LOR lift-off underlayers — thicker than LOR 3A, a non-photoimageable film spun beneath an imaging resist whose pre-bake-controlled undercut enables clean metal lift-off.", "thicknessRange": { "min_um": 0.47, "max_um": 0.98, "basis": "curve-span", "source": "curve-span: the document states only a whole-product-line thickness range ('Film thicknesses for depositions from <20nm - >5μm', Benefits, p.1) spanning every LOR/PMGI grade, not LOR 5A specifically. The range recorded here is the min/max of LOR 5A's own plotted curve (1000-4000 rpm) in the 'Spin Speed vs Thickness - Intermediate Films' figure, p.5." }, "spinCurves": [ { "label": "LOR 5A", "points": [ { "rpm": 1000, "um": 0.98 }, { "rpm": 2000, "um": 0.67 }, { "rpm": 3000, "um": 0.55 }, { "rpm": 4000, "um": 0.47 } ], "source": "read from figure \"Spin Speed vs Thickness - Intermediate Films\", p.5 of MicroChem \"LOR and PMGI Resists\" datasheet. This figure plots five grades: LOR 7B (blue square), LOR 5A (red circle), LOR 5B (green x), a COMBINED 'LOR 3A, LOR 3B' trace (black diamond), and SF6 (purple triangle). LOR 5A is the red-circle series specifically because it has its OWN distinct legend entry ('LOR 5A', not grouped with any other grade) and its own separate curve, clearly offset above the neighboring LOR 5B (green) and well above the combined LOR 3A/3B (black) trace in the same chart — it is its own trace, not the combined multi-grade series. Only 4 markers are plotted for LOR 5A (1000/2000/3000/4000 rpm); no 1500/2500/3500 rpm points exist for this series (unlike SF6, which has more points in the same figure). A figure read, ±10-15% plausible per-point error, not a numeric table. Chart footnote (p.5): 'Products were soft-baked at 180 ºC for 3 min' — the measurement condition for the plotted films, not a stated LOR-5A-specific process bake recommendation.", "figureRead": true } ], "spinNotes": "Only 4 spin-speed points (1000/2000/3000/4000 rpm) are plotted for LOR 5A; extrapolation below 1000 or above 4000 rpm is not supported by the chart. The page's boxed 'RECOMMENDED COATING PARAMETERS' (dispense 5 ml on a 150 mm Si wafer, dynamic dispense 3-5 s at 300-500 rpm, acceleration 10,000 rpm/s, terminal spin speed 3,000 rpm, spin time 45 s, EBR PG for edge-bead removal) appears once for the whole Technical Data page (p.5) and is not stated to be grade-specific, so it is recorded here as general page-level guidance rather than a confirmed LOR-5A parameter. Separately, general text (p.2) states spin speeds of 2,500-4,500 rpm give 'maximum coating uniformity' across the LOR/PMGI line, with lower speeds favored for larger or irregular/topographic substrates.", "adhesion": { "hmds": false, "notes": "\"Primers such as HMDS (hexamethyldisilazane) are typically NOT required to promote adhesion with PMGI/LOR products when used as recommended.\" LOR/PMGI is described as exhibiting 'excellent adhesion to most semiconductor, GaAs, and thin-film head substrates.' A dehydration bake (200°C, 5 min contact hot plate, or 30 min convection oven) is recommended before coating if maximum process reliability is needed. Source: \"Substrate preparation\", p.2." }, "rehydration": null, "softbake": { "temp_c": null, "time_s": null, "method": "hotplate", "notes": "THE BAKE TEMPERATURE IS THE UNDERCUT CONTROL, and the document gives only ranges, not an LOR-5A-specific scalar. General guidance (p.3): 'The recommended bake temperature range is 150°C - 200°C, although some PMGI products may be baked to 250°C... Hot plates are the preferred tool for the pre-bake; however, LOR/PMGI resists are also compatible with convection oven processes... a matrix design varying pre-bake temperature and time is recommended for process fine-tuning.' Separately, the Technical Data chart footnote (p.5) that includes LOR 5A's own spin curve states those plotted films 'were soft-baked at 180 ºC for 3 min' (180 s) — this is the measurement condition for the chart, not a stated process recommendation specific to LOR 5A. No grade-specific bake-temperature-vs-undercut-rate curve is published for LOR 5A: Figures 5a/5b (undercut rate vs. bake temperature and vs. bake time) are explicitly labeled 'LOR 10B' only, and Figure 6's dissolution-rate comparison groups grades only at the family level (LOR_A / LOR_B / SF / SF Slow bars, no per-grade numbers) at a single condition (180°C).", "source": "p.3 (\"Soft-bake/Prebake Process\") and p.5 chart footnote, MicroChem \"LOR and PMGI Resists\" datasheet" }, "exposureDose": null, "peb": null, "floodExposure": null, "develop": { "developer": "Document does not name a specific commercial developer product for LOR 5A; general text states LOR/PMGI is compatible with both metal-ion-free (MIF) and metal-ion-bearing (MIB) developer chemistries.", "dilution": null, "time_s": null, "method": null, "rinse": null, "source": "p.1 (\"Compatible with TMAH and metal-ion bearing developers\"), p.4 (\"Development Process\"), and p.6 Product Selection Guide (Developer Compatibility row), MicroChem \"LOR and PMGI Resists\" datasheet" }, "hardbake": null, "descum": null, "applications": [ "lift-off" ], "etchResistance": null, "liftoffSuitable": true, "platingSuitable": null, "stripper": "Remover PG (MicroChem/Kayaku). Baseline two-tank process: 60°C for 30 minutes in the first tank, then a 60°C rinse in the second tank; ultrasonic agitation improves removal efficiency. Actual time depends on pre-bake conditions, step coverage, and resist profile. Removal rate is reported as a function of soft-bake temperature and remover-bath temperature (Figure 9, p.4), but that figure is labeled for the 'SF Series', not LOR 5A specifically. Source: \"Lift-Off Process\", p.4.", "storage": "\"Store upright in original sealed containers in a dry area between 4 and 27°C (40-80°F). Keep away from sources of ignition, light, heat, oxidants, acids, and reducers. Do not use after the expiration date (1 year from date of manufacture).\" Source: \"LOR/PMGI Storage\", p.7 (general to all LOR/PMGI products; not stated to be LOR-5A-specific, but no grade-specific storage guidance exists in the document).", "notes": "LOR 5A is an ancillary, non-photoimageable PMGI-type (polydimethylglutarimide) underlayer: it is spin-coated beneath a conventional photoresist and never exposed itself, so it carries no dose, tone, or lithographic pattern of its own — only the imaging resist above it is exposed and developed. The undercut geometry that enables clean metal lift-off is a develop-time and pre-bake-temperature-controlled dimension, not a lithographic one: the datasheet states pre-bake temperature has 'the greatest influence on undercut rate,' with pre-bake time, the imaging resist's own exposure dose, developer choice, develop mode, and develop time as secondary factors. No grade-specific bake-temperature-vs-dissolution-rate curve is published for LOR 5A — the only such curves in this document (Figures 5a/5b) are for LOR 10B — so LOR 5A's own undercut rate cannot be read off this datasheet and should be characterized on-tool. In practice, too little undercut leaves an insufficient re-entrant profile, so evaporated or sputtered metal bridges over the sidewall and lift-off fails or leaves ragged edges; too much undercut can collapse the unsupported span of imaging resist over the gap, degrading pattern fidelity — both failure modes are tuned via pre-bake temperature/time and develop time, not exposure.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "A lift-off process for high resolution patterns using PMMA/LOR resist stack", "authors": "Chen et al.", "journal": "Microelectronic Engineering", "year": 2004, "doi": "10.1016/j.mee.2004.02.053", "url": "https://doi.org/10.1016/j.mee.2004.02.053", "accessedDate": "2026-07-15", "summary": "Demonstrates sub-100 nm lift-off patterns using a PMMA/LOR bilayer resist stack, exploiting the controlled LOR undercut.", "note": "The paper uses the LOR underlayer line generically in a PMMA/LOR stack; cited here for LOR 5A." } ], "troubleshooting": [ { "q": "Is LOR 5A a photoresist — is it exposed?", "a": "No. LOR 5A is a non-photoimageable PMGI-type underlayer — it is spin-coated beneath a conventional photoresist and is never itself exposed. It carries no dose, tone or pattern of its own; only the imaging resist above it is exposed and developed. The datasheet states LOR/PMGI does not require an exposure step in the standard bilayer lift-off process.", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A, p.4 (LOR/PMGI does not require an exposure step)" }, { "q": "How do I control LOR 5A undercut for lift-off?", "a": "Undercut is governed chiefly by pre-bake (soft-bake) temperature — the datasheet states it has the greatest influence on undercut rate — with pre-bake time, the imaging resist's dose, developer choice, develop mode and develop time as secondary factors. Recommended bake range is 150–200 °C; a matrix varying pre-bake temperature and time is recommended for tuning. No grade-specific undercut-rate curve is published for LOR 5A (the only such curves are for LOR 10B), so its undercut rate should be characterized on-tool.", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Soft-bake/Prebake Process, p.3" }, { "q": "Which developer should I use for LOR 5A?", "a": "The datasheet does not name a specific commercial developer for LOR 5A; it states only that LOR/PMGI is compatible with both metal-ion-free (MIF) and metal-ion-bearing developer chemistries. The Product Selection Guide gives compatibility at family level (LOR A → 0.26N MIF; LOR B → 0.24N MIF and MIB), but never states which family LOR 5A belongs to — so no developer, dilution or time is published for it specifically. Select and characterize on-tool.", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Development Process p.4 + Product Selection Guide p.6" }, { "q": "What are the lift-off failure modes with LOR 5A and how are they tuned?", "a": "Too little undercut leaves an insufficient re-entrant profile, so evaporated or sputtered metal bridges over the sidewall and lift-off fails or leaves ragged edges. Too much undercut can collapse the unsupported span of imaging resist over the gap, degrading pattern fidelity. Both are tuned via pre-bake temperature/time and develop time — not exposure, since LOR 5A is never exposed.", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A (lift-off failure modes; undercut set by pre-bake temperature/time and develop time)" }, { "q": "Does LOR 5A need HMDS priming?", "a": "No. Primers such as HMDS are typically not required to promote adhesion with PMGI/LOR products when used as recommended; LOR/PMGI has excellent adhesion to most semiconductor, GaAs and thin-film-head substrates. If maximum process reliability is needed, a dehydration bake (200 °C, 5 min on a contact hotplate or 30 min in a convection oven) is recommended before coating.", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Substrate preparation, p.2" } ], "provenance": { "datasheetUrl": "https://apps.mnc.umn.edu/pub/pds/lor.pdf", "datasheetVersionOrDate": "Rev. A (printed at the bottom of p.7; no other date is printed anywhere in the document)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "lor-3a", "name": "LOR 3A", "min_um": 0.28, "max_um": 0.567, "doseBasis": null } ], "humanVerified": false }, { "slug": "ma-n-1410", "name": "ma-N 1410", "manufacturer": "micro resist technology GmbH", "productLine": "ma-N 1400 series", "aliases": [ "maN 1410", "ma-N1410" ], "tone": "negative", "chemistry": "bisazide-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Document does not market ma-N 1400 for greyscale or 3D lithography; it targets microelectronics pattern transfer, etch masking, and PVD lift-off with nearly vertical (standard) or optionally undercut (lift-off) binary profiles.", "status": "active", "successorSlug": null, "summary": "ma-N 1410 is the third-thinnest grade in micro resist technology's ma-N 1400 negative-tone photoresist series, nominally coating 1.0 µm at 3000 rpm/30 s, used as a high-etch-resistance mask or, with an extended develop time, for undercut lift-off patterning.", "thicknessRange": { "min_um": 1, "max_um": 1, "basis": "stated", "source": "stated — the only achievable-thickness figure this document gives for ma-N 1410 specifically is the single nominal value 1.0 ± 0.1 µm at 3000 rpm/30 s (Physical properties of the resist solution table, p.1). No separate min-max coating range is stated in prose for this grade; the spin-coating notes explain why the fuller multi-rpm curve is not converted into a range here." }, "spinCurves": [ { "label": "ma-N 1410", "points": [ { "rpm": 1000, "um": 1.75 }, { "rpm": 2000, "um": 1.25 }, { "rpm": 3000, "um": 1 }, { "rpm": 4000, "um": 0.87 }, { "rpm": 5000, "um": 0.77 }, { "rpm": 6000, "um": 0.7 } ], "source": "read from figure, \"Fig. 1: Spin curves of the ma-N 1400 series, 30 s spin time\", p.2 of ma-N 1400 series Processing guidelines (micro resist technology, rev. ls.05.11.25.02); trace identified as the red line, second from the top, per the chart's own inline legend (ma-N 1420 black / ma-N 1410 red / ma-N 1407 green / ma-N 1405 blue), matching the series' viscosity ranking (1420 highest > 1410 > 1407 > 1405 lowest). The curve carries no individual point markers, so values are read at the 6 labelled x-axis gridlines (1000/2000/3000/4000/5000/6000 rpm). The chart's own vertical reference line at 3000 rpm crosses the red trace at ~1.0 µm, matching the numeric anchor (Film Thickness = 1.0 ± 0.1 µm at 3000 rpm/30s, 'Physical properties of the resist solution' table p.1, corroborated by the 'Processing conditions - STANDARD PROCESS' table p.2).", "figureRead": true } ], "spinNotes": "Fig. 1 (p.2, 'Spin curves of the ma-N 1400 series, 30 s spin time') plots a full thickness-vs-spin-speed curve for ma-N 1410 alongside ma-N 1405/1407/1420 (four individually legended, distinctly colored lines, no individual point markers, 1000-6000 rpm, ranked by viscosity: 1420 highest/topmost black, 1410 second red, 1407 third green, 1405 lowest blue). The red (ma-N 1410) trace is plotted here from its 6 labelled x-axis gridlines; the chart's own vertical reference line at 3000 rpm crosses it at ~1.0 µm, matching the numeric-table anchor below essentially exactly, which confirms the right trace was isolated in a chart carrying no point markers. The datasheet additionally publishes a single numeric ANCHOR POINT — 3000 rpm → 1 µm (numeric table 'Physical properties of the resist solution', p.1 of ma-N 1400 series processing guidelines (footnote 1: 'Spin coated at 3000 rpm for 30 s'); Film Thickness = 1.0 ± 0.1 µm for ma-N 1410. Corroborated by the 'Processing conditions - STANDARD PROCESS' table, p.2, which also lists 1.0 µm for ma-N 1410 at the same 3000 rpm/30 s condition.). 'Uniform coatings are obtained by spin coating of ma-N 1400 solutions in the thickness range indicated in the spin curves' (p.2); no dispense volume, acceleration ramp, or edge-bead-removal step is described anywhere in this document.", "adhesion": { "hmds": true, "notes": "'For improving resist film adhesion to Si and SiO2 substrates it is advisable to apply an adhesion promoter such as HMDS' (Substrate preparation, p.2). Standard process substrate preparation is 'Oven: 200 °C, 30 min (HMDS for Si and SiO2 substrates)' (Processing conditions table, p.2)." }, "rehydration": null, "softbake": { "temp_c": 100, "time_s": 90, "method": "hotplate", "notes": "Value shown (100 °C, 90 s) is the ma-N 1410 column of the hotplate prebake row; other grades in the same table use different times at the same 100 °C (1405/1407: 60 s, 1420: 120 s). An oven alternative is also given: 100-105 °C for 15-30 min (shared across all grades). Recommended prebake temperature also varies by substrate: Si 100-120 °C, Au 120 °C, Si3N4 120 °C, GaAsP/GaAs 100 °C (p.3) — the 100 °C/90 s value applies to the standard (unspecified-substrate) process. A higher prebake (up to 160 °C) or longer time increases etch resistance/thermal stability but also increases developing time.", "source": "Processing conditions - STANDARD PROCESS table, p.2; Recommended prebake temperatures table, p.3" }, "exposureDose": { "doses": [ { "wavelength_nm": null, "value_mJcm2": 450, "source": "Processing conditions - STANDARD PROCESS table, p.2" } ], "basisCopy": "450 ± 30 mJ/cm² is the standard-process dose. It was taken under a broadband lamp with the intensity metered at 365 nm — a lamp dose read at i-line, not an i-line-only exposure." }, "peb": null, "floodExposure": null, "develop": { "developer": "ma-D 533/S", "dilution": null, "time_s": 30, "timeRange_s": { "min": 20, "max": 40 }, "method": "immersion", "rinse": "Developed resist films are thoroughly rinsed with deionized water and then dried.", "source": "Processing conditions - STANDARD PROCESS table (footnote 2: immersion development), p.2; Develop section, p.4" }, "hardbake": { "temp_c": 100, "time_s": 1800, "notes": "Optional, series-wide (not per-grade) recommendation: 'Hardbaking of the developed resist patterns is suggested in an oven at 100 °C for approximately 30 min. A temperature ramp is beneficial in order to reduce pattern reflow.'", "source": "Hardbake (optional) section, p.4" }, "descum": null, "applications": [ "etch-mask", "lift-off", "mems-structural" ], "etchResistance": "\"Well suitable as an etch mask exhibiting high dry and wet etch resistance\" (Characteristics, p.1).", "liftoffSuitable": true, "platingSuitable": null, "stripper": "mr-Rem 660 (solvent based) and ma-R 404/S (strongly alkaline) recommended; acetone, N-methylpyrrolidone (NMP) or oxygen plasma also suitable for residue-free removal (Removal section, p.4). For lift-off specifically: mr-Rem 660 or NMP at 40-60 °C assisted by ultrasonics, or acetone assisted by ultrasonics (p.5).", "storage": "\"Storage at temperatures of 18 – 25 °C is recommended. Do not store ma-N 1400 resists in a refrigerator. Resists and unprocessed resist films have to be stored under yellow light. Keep the bottle closed when not in use. Under these conditions a shelf life of 6 months from the date of manufacture is ensured.\" (Storage section, p.5)", "notes": "ma-N 1410 is the third grade (of four) in micro resist technology's ma-N 1400 negative-tone series, nominally coating 1.0 ± 0.1 µm at 3000 rpm/30 s and developing in the metal-ion-free ma-D 533/S developer recommended for microelectronics work. The standard process yields nearly vertical sidewalls; the datasheet describes a separate lift-off recipe in which undercut profile is tuned primarily by extending development time (holding exposure dose and prebake constant) rather than by underexposing — a worked 2.0 µm-thick example (not this grade specifically) shows undercut growing from 0.6 to 2.1 µm as development time increases from 65 to 120 s at a fixed 550 mJ/cm² dose and 100 °C/120 s prebake. For clean lift-off the datasheet recommends a resist film 1.5-2x the metal deposition thickness, plus — for sputtered metals in particular — a higher prebake and/or a deep-UV (200-300 nm) flood exposure at 2-5x the patterning dose to thermally stabilize the pattern before deposition. The exposure dose (450 ± 30 mJ/cm²) is explicitly measured at 365 nm on a broadband tool; the document plots UV/vis absorption out past 405 nm but never gives a dose at that wavelength. The datasheet's Fig. 1 plots a full ma-N 1400-series spin curve (four grades, 1000-6000 rpm) and the one point it also prints as a number is the 3000 rpm/1.0 µm table anchor. Chemistry classified as bisazide-novolak from microresist.de's statement that the ma-N 1400 series is an 'aromatic bisazide/novolac based resist series'.", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Combined ultraviolet- and electron-beam lithography with Micro-Resist-Technology GmbH ma-N1400 resist", "authors": "Thoen et al.", "journal": "Journal of Vacuum Science & Technology B", "year": 2022, "doi": "10.1116/6.0001918", "url": "https://doi.org/10.1116/6.0001918", "accessedDate": "2026-07-15", "summary": "one ma-N 1400 layer exposed by UV and 100 kV e-beam for an on-chip THz spectrometer", "note": "Family-level reference: the study characterizes the ma-N 1400 series (title resist 'ma-N1400'), not the 1410 grade specifically; cited as evidence of ma-N 1400-series patterning under combined UV and 100 kV e-beam exposure." } ], "troubleshooting": [ { "q": "Which developer does ma-N 1410 use?", "a": "ma-D 533/S, a TMAH-based (metal-ion-free) aqueous-alkaline developer recommended for microelectronics work. The standard process for ma-N 1410 is 30 ± 10 s by immersion with the developer at 20–25°C, followed by a thorough deionized-water rinse and dry.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — STANDARD PROCESS table, p.2 + Develop section, p.4; TMAH per microresist.de flyer" }, { "q": "What is the exposure dose for ma-N 1410?", "a": "450 ± 30 mJ/cm² in the standard process, from broadband exposure with intensity measured at 365 nm (i-line). The document plots UV/vis absorption past 405 nm but never gives a dose value at h-line, so no 405 nm dose is published — characterize on-tool. The resist is effective for broadband or i-line exposure.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — STANDARD PROCESS table + footnote 1 / Exposure section, p.2–3" }, { "q": "What prebake (soft bake) does ma-N 1410 need?", "a": "100°C for 90 s on a hotplate is the standard prebake for ma-N 1410 (thinner 1405/1407 grades use 60 s, the thicker 1420 uses 120 s). An oven alternative is 100–105°C for 15–30 min. Recommended prebake temperature varies by substrate — 100–120°C on Si, 120°C on Au and Si3N4. A higher prebake (up to 160°C) or longer time raises etch resistance but also increases the develop time needed.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — STANDARD PROCESS table, p.2 + Recommended prebake temperatures, p.3" }, { "q": "Does ma-N 1410 need HMDS or an adhesion promoter?", "a": "Yes for Si and SiO2 — the datasheet advises applying an adhesion promoter such as HMDS. Standard substrate preparation is an oven bake at 200°C for 30 min, with HMDS for Si and SiO2 substrates.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — Substrate preparation / Processing conditions table, p.2" }, { "q": "How do I tune an undercut profile for lift-off with ma-N 1410?", "a": "Extend the development time while holding exposure dose and prebake constant — the manufacturer's lever for undercut, rather than underexposing. A worked 2.0 µm example (not this grade) shows undercut growing from 0.6 to 2.1 µm as develop time goes 65→120 s at fixed 550 mJ/cm² and 100°C/120 s prebake. For clean lift-off keep resist thickness 1.5–2× the metal deposition thickness; for sputtered metals add a higher prebake or a deep-UV flood at 2–5× the patterning dose.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — lift-off guidance + worked undercut example, p.4–5" } ], "provenance": { "datasheetUrl": "https://www.nanophys.kth.se/nanolab/resists/vh_man_1400_en_05112502_ls.pdf", "datasheetVersionOrDate": "ls.05.11.25.02", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.microresist.de/wp-content/uploads/2022/08/NegativeResists_Flyer_Aug22.pdf", "what": "fetched and read in this same session (for the mr-dwl-40 recipe); used only to corroborate that ma-D 533/S is TMAH-based (that flyer's Developer table, p.2, lists 'ma-D 533/S (TMAH based)' for the ma-N 1400 series), since the primary datasheet referenced above states only 'aqueous alkaline development' and does not itself name the alkali type for ma-D 533/S." }, { "url": "https://microresist.de/en/produkt/ma-n-1400-series/", "what": "microresist.de states the ma-N 1400 series is an 'aromatic bisazide/novolac based resist series'; the basis for classifying ma-N 1410 as bisazide-novolak." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "ma-n-1420", "name": "ma-N 1420", "min_um": 1.41, "max_um": 3.35, "doseBasis": "550 mJ/cm²" } ], "humanVerified": false }, { "slug": "ma-n-1420", "name": "ma-N 1420", "manufacturer": "micro resist technology", "productLine": "ma-N 1400 series", "aliases": [ "maN 1420", "ma N 1420", "ma-N1420" ], "tone": "negative", "chemistry": "bisazide-novolak", "chemistryNote": "Aromatic bisazide/novolak per the manufacturer's processing guidelines: a novolak resin cross-linked by a photolyzed bisazide. Deliberately NOT tagged dnq-novolak — diazonaphthoquinone is a positive-tone dissolution-inhibition mechanism, and this is a negative-tone cross-linking resist.", "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet either way. ma-N 1400 is marketed as a high-contrast negative resist for standard lithography and lift-off, not for grayscale/3D relief work; no dose-to-thickness linearity data (which grayscale processing requires) is published.", "status": "active", "successorSlug": null, "summary": "ma-N 1420 is the thickest grade of micro resist technology's ma-N 1400 bisazide/novolak negative series, nominally 2.0 µm at 3000 rpm/30 s (~1.4–3.4 µm range) — a high-etch-resistance mask and single-layer PVD lift-off resist with develop-tunable undercut.", "thicknessRange": { "min_um": 1.41, "max_um": 3.35, "basis": "curve-span", "source": "curve-span: the ma-N 1400 datasheet states no achievable-thickness range for ma-N 1420 — only a 2.0 ± 0.1 µm nominal at 3000 rpm/30 s (Physical properties table, p.1) and the Fig. 1 spin curves (p.2-3). min/max are the span of this recipe's own ma-N 1420 spin curve, read off the native vector line (1.41 µm at 6000 rpm to 3.35 µm at 1000 rpm)." }, "thicknessRangeNote": "Approximate achievable range for the ma-N 1420 grade specifically, read off the datasheet's spin-curve figure over 1000-6000 rpm (the spin curve above). The nominal/reference-condition thickness is 2.0 ± 0.1 µm at the standard 3000 rpm / 30 s spin (this exact value comes from a numeric table, not the figure).", "spinCurves": [ { "label": "ma-N 1420", "points": [ { "rpm": 1000, "um": 3.35 }, { "rpm": 2000, "um": 2.39 }, { "rpm": 3000, "um": 1.97 }, { "rpm": 4000, "um": 1.71 }, { "rpm": 5000, "um": 1.54 }, { "rpm": 6000, "um": 1.41 } ], "source": "read from Fig. 1 ('Spin curves of the ma-N 1400 series, 30 s spin time'), p.3 (numbered p.2 on the printed page) of micro resist technology's 'Processing guidelines — Negative Tone Photoresist Series ma-N 1400' datasheet (doc code ls.05.11.25.02). The chart is drawn as vector line segments rather than a raster image, so the trace can be read exactly at each gridline. The curve is a continuous line with no point markers, so values are line-crossings read only at the labelled gridlines (every 1000 rpm from 1000 to 6000) — never interpolated between them or extrapolated past the line's plotted range. The 3000 rpm point (1.97 µm) is confirmed by the numeric table on p.1 ('Physical properties of the resist solution': Film Thickness 2.0 ± 0.1 µm, footnoted 'spin coated at 3000 rpm for 30 s').", "figureRead": true } ], "spinNotes": "Substrates should be free of impurities/moisture, baked at 200°C and cooled immediately before coating (or O2/ozone plasma cleaned); HMDS is advised for adhesion to Si/SiO2. No dispense-volume/acceleration/edge-bead protocol is published for ma-N 1400 (unlike some other resist datasheets); equipment used to generate the datasheet's own data: Convac or Suss RC5 spin coater without cover, 3000 rpm / 30 s reference condition.", "adhesion": { "hmds": true, "notes": "HMDS recommended as an adhesion promoter for Si and SiO2 substrates. Substrates should be free of impurities and moisture, baked at 200°C and cooled to room temperature immediately before coating; oxygen or ozone plasma cleaning is an accepted alternative." }, "rehydration": null, "softbake": { "temp_c": 100, "time_s": 120, "method": "hotplate", "notes": "100°C / 120 s is the standard hotplate prebake for the 2.0 µm ma-N 1420 film (thinner grades in the same series use shorter times at the same 100°C: ma-N 1405/1407 = 60 s, ma-N 1410 = 90 s). Oven alternative: 100–105°C for 15–30 min. Prebake temperature may be raised (max 160°C) or time extended to further increase etch resistance/thermal stability, at the cost of a longer required develop time. Recommended prebake temperature varies by substrate: 100–120°C (Si), 120°C (Au), 120°C (Si3N4), 100°C (GaAsP/GaAs).", "source": "Processing conditions - STANDARD PROCESS table + 'Prebake' section, p.2 and p.3, micro resist technology ma-N 1400 datasheet ls.05.11.25.02" }, "exposureDose": { "doses": [ { "wavelength_nm": null, "value_mJcm2": 550, "source": "Processing conditions - STANDARD PROCESS table, p.2, micro resist technology ma-N 1400 datasheet ls.05.11.25.02" } ], "basisCopy": "The 2.0 µm standard process takes 550 ± 30 mJ/cm² under a broadband lamp, with the reading taken at 365 nm; the resist absorbs out to about 410 nm but no h-line dose is quoted." }, "peb": { "temp_c": null, "time_s": null, "notes": "No post-exposure bake step is specified anywhere in the datasheet. Consistent with a classical bisazide-crosslinking negative resist, which crosslinks directly on exposure rather than via an acid-catalyzed post-bake reaction (as in chemically amplified resists).", "source": null }, "floodExposure": { "dose_mJcm2": null, "notes": "For lift-off/PVD stabilization, an optional deep-UV flood exposure of the developed pattern (200–300 nm) at 'twice to fivefold' the 365 nm patterning dose is recommended — i.e. roughly 2–5× 550 = 1100–2750 mJ/cm² for the standard ma-N 1420 process, but the datasheet publishes only the multiplier, not an absolute number. Applied after development and before PVD metal deposition to increase thermal/dissolution stability of the resist pattern during sputtering.", "source": "'Processing conditions - LIFT-OFF' section, p.4, micro resist technology ma-N 1400 datasheet ls.05.11.25.02" }, "develop": { "developer": "ma-D 533/S", "dilution": "ready-to-use (undiluted)", "time_s": 60, "timeRange_s": { "min": 50, "max": 70 }, "method": "immersion", "rinse": "DI water", "source": "Processing conditions - STANDARD PROCESS table, p.2, micro resist technology ma-N 1400 datasheet ls.05.11.25.02. Development time for ma-N 1420 is 60 ± 10 s; developer temperature should be 20–25°C." }, "hardbake": { "temp_c": 100, "time_s": 1800, "notes": "Optional. Oven bake at 100°C for approximately 30 min to further increase etch resistance and thermal stability of developed patterns. A temperature ramp is recommended to reduce pattern reflow.", "source": "'Hardbake (optional)' section, p.4, micro resist technology ma-N 1400 datasheet ls.05.11.25.02" }, "descum": null, "applications": [ "etch-mask", "lift-off" ], "etchResistance": "High wet and dry etch resistance (a headline characteristic of the ma-N 1400 series). Can be further increased by raising prebake temperature (up to 160°C max) or prebake time, or by an optional post-develop hardbake (100°C, ~30 min); developing time increases correspondingly.", "liftoffSuitable": true, "platingSuitable": null, "stripper": "mr-Rem 660 (solvent-based) or ma-R 404/S (strongly alkaline) ready-to-use removers recommended; acetone, N-methylpyrrolidone (NMP), or O2 plasma also give residue-free removal. For lift-off specifically after PVD: mr-Rem 660 or NMP at 40–60°C with ultrasonic assist (acetone with ultrasonics also recommended).", "storage": "Store at 18–25°C; do not refrigerate. Store resist and unprocessed films under yellow light, bottle closed when not in use. Shelf life 6 months from date of manufacture under these conditions. Best patterning results at 20–25°C ambient and 40–46% RH.", "notes": "ma-N 1420 gives a nominal 2.0 ± 0.1 µm film at the reference 3000 rpm / 30 s spin condition. Standard processing (100°C/120s prebake, 550 mJ/cm² dose, 60s develop) yields near-vertical sidewalls. Undercut (lift-off) profiles are produced primarily by INCREASING develop time (the manufacturer's preferred lever) and/or reducing exposure dose, while holding prebake conditions at standard values — the datasheet's own worked example (2.0 µm film, 100°C/120s prebake, 550 mJ/cm² dose) shows undercut of 0.6/0.8/1.7/2.1 µm for ma-D 533/S develop times of 65/80/100/120 s respectively. Raising prebake temperature (up to 160°C) and/or extending prebake time reduces undercut for a given develop time and improves thermal stability for sputtering, but increases the develop time needed. For clean PVD lift-off, resist thickness should be 1.5–2× the metal deposition thickness. Exposure dose must be de-rated for reflective/absorbing substrates (e.g. ~0.5× the Si dose on Au).", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Combined ultraviolet- and electron-beam lithography with Micro-Resist-Technology GmbH ma-N1400 resist", "authors": "Thoen et al.", "journal": "Journal of Vacuum Science & Technology B", "year": 2022, "doi": "10.1116/6.0001918", "url": "https://doi.org/10.1116/6.0001918", "accessedDate": "2026-07-15", "summary": "one ma-N 1400 layer exposed by UV and 100 kV e-beam for an on-chip THz spectrometer", "note": "Family-level reference for the ma-N 1400 series (title resist 'ma-N1400'), not the 1420 grade specifically; included as ma-N 1400-series evidence of dual UV and 100 kV e-beam exposure in an on-chip THz spectrometer." } ], "troubleshooting": [ { "q": "Which developer does ma-N 1420 use?", "a": "ma-D 533/S, a ready-to-use (undiluted) TMAH-based aqueous-alkaline developer. The standard process is 60 ± 10 s by immersion with the developer at 20–25°C, followed by a deionized-water rinse. Extending the develop time is also the manufacturer's preferred lever for producing an undercut lift-off profile.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — STANDARD PROCESS table, p.2; developer family (TMAH) per microresist.de ma-D 533/S page" }, { "q": "What is the exposure dose for ma-N 1420?", "a": "550 ± 30 mJ/cm² for the standard 2.0 µm ma-N 1420 film, from broadband exposure with intensity measured at 365 nm (i-line). The resist is effective across broadband, i-line and h-line, but no separate 405 nm (h-line) dose value is published — leave it to be characterized on-tool. Dose must be de-rated for reflective substrates, e.g. roughly 0.5× the silicon dose on gold.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — STANDARD PROCESS table + footnote 1, p.2" }, { "q": "Does ma-N 1420 need a post-exposure bake?", "a": "No — the datasheet specifies no post-exposure bake step. That is consistent with a classical bisazide-crosslinking negative resist, which cross-links directly on exposure rather than through an acid-catalyzed post-bake reaction as in chemically amplified resists.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — no PEB step in the STANDARD PROCESS sequence, p.2" }, { "q": "Does ma-N 1420 need HMDS or adhesion promotion?", "a": "Yes for Si and SiO2 — HMDS is advised as an adhesion promoter. Substrates should be free of impurities and moisture, baked at 200°C and cooled to room temperature immediately before coating; an oxygen or ozone plasma clean is an accepted alternative.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — Substrate preparation, p.2" }, { "q": "How do I get an undercut profile for lift-off with ma-N 1420?", "a": "Increase the develop time — the manufacturer's preferred lever — while holding prebake and dose at standard values. The datasheet's worked example (2.0 µm film, 100°C/120 s prebake, 550 mJ/cm²) gives undercut of 0.6 / 0.8 / 1.7 / 2.1 µm for ma-D 533/S develop times of 65 / 80 / 100 / 120 s. Raising prebake temperature (up to 160°C) reduces undercut for a given develop time. For clean PVD lift-off, keep resist thickness 1.5–2× the metal thickness.", "source": "micro resist technology ma-N 1400 Processing Guidelines (ls.05.11.25.02) — LIFT-OFF section worked example, p.4" } ], "provenance": { "datasheetUrl": "https://litho.nano.cnr.it/wp-content/datasheets/man_1400.pdf", "datasheetVersionOrDate": "micro resist technology 'Processing guidelines — Negative Tone Photoresist Series ma-N 1400', document code ls.05.11.25.02 (no separate calendar date printed on the document; also mirrored as vh_man_1400_en_05112502_ls.pdf)", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.microresist.de/en/produkt/ma-d-533-s/", "what": "used only to confirm that the ma-D 533/S developer is TMAH-based (the primary ma-N 1400 datasheet only says 'aqueous alkaline development' without naming the base) — used to classify the developer family, not as a source for any numeric process parameter" } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "photoimageable": true, "familySiblings": [ { "slug": "ma-n-1410", "name": "ma-N 1410", "min_um": 1, "max_um": 1, "doseBasis": "450 mJ/cm²" } ], "humanVerified": false }, { "slug": "ma-p-1215", "name": "ma-P 1215", "manufacturer": "micro resist technology GmbH", "productLine": "ma-P 1200 series", "aliases": [ "ma-P1215" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "This document (standard ma-P 1200 series flyer, grades 1205/1210/1215/1225/1240/1275 + 1275 HV) never mentions grayscale or 3D lithography. Grayscale capability is associated with a separately-branded 'ma-P 1200G' sheet (see the ma-p-1275g recipe already in this library, extracted from a distributor mirror of that different document) — this ma-P.pdf does not confirm or deny any relationship between the two lines.", "status": "active", "successorSlug": null, "summary": "Positive-tone resist from micro resist technology's ma-P 1200 series; ma-P 1215 is the 1.5 µm nominal-thickness grade, coated at 3000 rpm for 30 s, part of a six-grade family spanning 0.3–40 µm.", "thicknessRange": { "min_um": 1.5, "max_um": 1.5, "basis": "stated", "source": "stated — the family table (p.1) prints one film-thickness value per grade at one shared spin condition (3000 rpm / 30 s); for ma-P 1215 that value is 1.5 µm. No achievable min–max spread is stated for this specific grade, and the multi-grade 'Spin curves, 30 s spin time' figure on the same page was not read for individual points (the spin-coating notes explain why) — 1.5 µm is therefore recorded as a single documented anchor, not a genuine range." }, "spinCurves": [], "spinNotes": "The 'Positive Photoresist Series' table (p.1) lists ma-P 1205/1210/1215/1225/1240/1275 side by side, each with exactly one film-thickness value, all coated at the SAME condition: 3000 rpm, 30 s spin time. For ma-P 1215 that is 1.5 µm — a single anchor point, not a spin-speed sweep, so per protocol no curve is published (a one-point series is not a curve). A separate figure titled 'ma-P 1200 series — Spin curves, 30 s spin time' (p.1) plots film thickness vs. spin speed (1000–6000 rpm) for all six grades on one chart with a color-coded legend (ma-P 1275/1240/1225/1215/1210/1205, in that order, thickest to thinnest). That figure carries no numeric table — only axis tick labels (0–16 µm, 1000–6000 rpm) and the legend strings — so no per-grade values are published from it, and the tabulated anchor above is the only thickness figure with a number attached. No accel, dispense volume, edge-bead removal, or rehydration guidance is published anywhere in this document. The manufacturer's own feature list states 'No post exposure bake' for the whole ma-P 1200 series.", "adhesion": { "hmds": null, "notes": "Not mentioned in this document." }, "rehydration": null, "softbake": null, "exposureDose": { "doses": [ { "wavelength_nm": null, "value_mJcm2": 45, "source": "table \"Positive Photoresist Series\", p.1 of ma-P.pdf, ma-P 1215 column" } ], "basisCopy": "45 mJ/cm² is the published dose for ma-P 1215, taken under broadband exposure with the meter set on the 365 nm line rather than as a monochromatic i-line spec." }, "peb": null, "floodExposure": null, "develop": { "developer": null, "dilution": null, "time_s": null, "method": null, "rinse": null, "source": "bullet \"Aqueous alkaline development\", p.1 of ma-P.pdf" }, "hardbake": null, "descum": null, "applications": [ "etch-mask", "electroplating-molding" ], "etchResistance": "Manufacturer states \"Outstanding pattern stability in wet etch processes and acid and alkaline plating baths\" and \"Highly stable in dry etch processes e.g. CHF3, CF4, SF[x]\" for the ma-P 1200 series (p.1).", "liftoffSuitable": null, "platingSuitable": true, "stripper": null, "storage": null, "notes": "ma-P 1215 is the 1.5 µm nominal-thickness member of micro resist technology's ma-P 1200 positive-tone series, a six-grade family (1205 through 1275) spanning 0.3–40 µm, all coated at the same 3000 rpm / 30 s condition per the family table. The manufacturer calls out \"no post exposure bake\" as a series-wide feature, which simplifies the process relative to resists that require a critical PEB step. Development is aqueous-alkaline, but this flyer names no specific developer product, dilution, or time — only a general process-flow diagram (coat, expose, develop) is shown. A multi-grade spin-speed curve (1000–6000 rpm, 30 s) is published for the whole family on one chart, but no numeric table accompanies it, so the tabulated 1.5 µm anchor is the only thickness figure with a number attached. The document also markets ma-P 1275 / ma-P 1275 HV as separate high-viscosity grades for electroplating molds up to 60 µm, but does not mention any 'ma-P 1275G' or grayscale variant. Chemistry classified as dnq-novolak from kayakuam.com's statement that ma-P 1200 is a 'positive tone DNQ/novolac based resist series'.", "developerFamily": null, "references": [ { "type": "paper", "accessedDate": "2026-07-16", "title": "Robust Pressure Sensor in SOI Technology with Butterfly Wiring for Airfoil Integration", "authors": "Haus et al.", "journal": "Sensors", "year": 2021, "doi": "10.3390/s21186140", "summary": "Uses ma-P 1215 as the lithographic mask through which 40% hydrofluoric acid opens the oxide to define boron doping windows, in an SOI piezoresistive pressure sensor built for airfoil integration.", "note": "Etch-mask usage against concentrated HF, then stripped before the dopant drive-in.", "url": "https://doi.org/10.3390/s21186140" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Mapping enzyme catalysis with metabolic biosensing", "authors": "Xu et al.", "journal": "Nature Communications", "year": 2021, "doi": "10.1038/s41467-021-27185-9", "summary": "Transfers sawtooth electrode patterns into a 2 um-thick ma-P 1215 layer over sputtered chromium, then wet-etches the chromium through the resist to build the electrodes of a droplet-microfluidic enzyme-screening chip.", "note": "Chromium wet-etch mask usage on a glass substrate.", "url": "https://doi.org/10.1038/s41467-021-27185-9" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Linked optical and gene expression profiling of single cells at high-throughput", "authors": "Zhang et al.", "journal": "Genome Biology", "year": 2020, "doi": "10.1186/s13059-020-01958-9", "summary": "States a complete ma-P 1215 process for a chromium electrode mask: a 2 um coat, a 1 min bake at 95 C, a 3.5 min collimated UV exposure, then development and chromium etching.", "note": "One of the few papers that publishes the ma-P 1215 bake and exposure conditions explicitly rather than deferring to the datasheet.", "url": "https://doi.org/10.1186/s13059-020-01958-9" } ], "provenance": { "datasheetUrl": "https://www.nanophys.kth.se/nanolab/resists/mrt-pdfs/ma-P.pdf", "datasheetVersionOrDate": "20 June 2008", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://kayakuam.com/products/ma-p-1200/", "what": "kayakuam.com states 'ma-P 1200 is a positive tone DNQ/novolac based resist series'; the basis for classifying ma-P 1215 as dnq-novolak." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "ma-p-1275g", "name": "ma-P 1275G", "manufacturer": "micro resist technology GmbH", "productLine": "ma-P 1200G series", "aliases": [ "maP 1275G", "ma-P1275G" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": true, "grayscaleNote": "Document markets the series explicitly for greyscale lithography: 'Positive tone photoresist series specifically designed for the requirements of greyscale lithography... Reduced contrast... Film thickness up to 60 µm and higher... 50 - 60 µm depth range of the patterns possible in greyscale lithography.' The ma-P 1275G example figure shows '~53 µm pattern depth in ~58 µm thick ma-P 1275G'. Also states 'An application in standard binary lithography is also possible.'", "status": "active", "successorSlug": null, "summary": "ma-P 1275G is the thickest grade in micro resist technology's ma-P 1200G positive-tone greyscale photoresist series, coating from roughly 9.3 to 60 µm and used for 3D micro-optic, MEMS/MOEMS and display structures written by dose-modulated laser direct writing or a greyscale mask.", "thicknessRange": { "min_um": 9.3, "max_um": 60, "basis": "stated", "source": "stated — per-grade 'Film thickness' table for ma-P 1275G (p.1) lists four achievable coatings (9.3, 15, 30, 60 µm), each reached with a different spin speed AND a different spin time (30 s, 30 s, 60 s, 4 s respectively)." }, "spinCurves": [], "spinNotes": "No spin curve is published here. The per-grade film-thickness table for ma-P 1275G gives four (rpm, time, thickness) triples — 3000 rpm/30 s→9.3 µm, 1500 rpm/30 s→15 µm, 500 rpm/60 s→30 µm, 1000 rpm/4 s→60 µm — but spin TIME differs across the four points (30/30/60/4 s), so they are four discrete target-thickness recipes, not points on one continuous rpm-only spin curve; sorted by rpm alone the thickness rises from 500→1000 rpm (30→60 µm) before falling again at 1500 and 3000 rpm, which would fail a monotonic-curve sanity check and misrepresent the data as a single spin curve. A separate figure ('Film thickness [µm] vs Spin speed [rpm]', 1000–6000 rpm, 0–25 µm axis) plots ma-P 1275G, 1225G and 1215G together at a FIXED 30 s spin time, which is a genuine spin curve for this grade, but that 30 s curve's y-axis (max 25 µm) does not reach the 60 µm value from the table, so it evidently covers a different/narrower thickness regime than the table's 4-14 s recipes. The table and the figure therefore describe different regimes, and neither is a clean rpm-only sweep, so no spin curve is published for this grade.", "adhesion": { "hmds": null, "notes": "Not addressed in this product-information sheet." }, "rehydration": null, "softbake": null, "exposureDose": { "doses": [], "basisCopy": "The ma-P 1200G grades get a 350 to 450 nm sensitivity window and nothing else — the demo patterns were written at 355, 390 and 405 nm, but no dose in mJ/cm² is printed for any of them." }, "peb": null, "floodExposure": null, "develop": { "developer": null, "dilution": null, "time_s": null, "method": null, "rinse": null, "source": "Characteristics, p.1" }, "hardbake": null, "descum": null, "applications": [ "grayscale-3d", "mems-structural", "electroplating-molding", "etch-mask" ], "etchResistance": "\"Suitable for dry etch processes e.g. with CHF3, CF4, SF6\" (Characteristics, p.1).", "liftoffSuitable": null, "platingSuitable": true, "stripper": null, "storage": null, "notes": "ma-P 1275G is the thickest grade of micro resist technology's ma-P 1200G positive-tone greyscale series, rated by the manufacturer for coatings from roughly 9.3 to 60 µm depending on spin speed and time. Greyscale (analog) lithography needs a resist whose exposed thickness responds smoothly to dose so a continuous 3D relief can be written by a modulated laser or a grey-level mask; the datasheet markets the series as having 'reduced contrast' and states 50-60 µm pattern depths are achievable, but it does not publish a dose-vs-remaining-thickness (contrast) curve, so the actual linearity of that dose response is not characterized here and must be measured on-tool. The four film-thickness/spin-speed pairs the datasheet lists for this grade each use a different spin time (30 s, 30 s, 60 s and 4 s), so they describe four discrete target-thickness recipes rather than points on one continuous spin curve, and no spin curve is published for this grade. No softbake, PEB, hardbake, developer product name, or dose values are given in this flyer-style product-information sheet; a full technical datasheet would be needed to fill those in. Chemistry classified as dnq-novolak from microresist.de's ma-P 1200G series page, the greyscale variant of the same DNQ/novolak ma-P family.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "accessedDate": "2026-07-16", "title": "Rapid prototyping of 3D microstructures: A simplified grayscale lithography encoding method using blender", "authors": "Borghi et al.", "journal": "Micro and Nano Engineering", "year": 2025, "doi": "10.1016/j.mne.2024.100294", "summary": "Encodes 3D models as grayscale masks in Blender and writes them into a 30 um ma-P 1275G film (450 rpm for 60 s; 100 C for 10 min; 2 h rehydration) on a DMD maskless projection system, developing in mr-D 526/S to reproduce stairs, ramps and sinusoidal reliefs.", "note": "Maskless greyscale usage. Resist identity and process conditions were confirmed in the authors' open-access preprint of this same work (arXiv:2409.16749); the version of record is paywalled to automated fetch.", "url": "https://doi.org/10.1016/j.mne.2024.100294" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Directional Fluidity of Dense Emulsion Activated by Transverse Wedge-Shaped Microroughness", "authors": "Guastella et al.", "journal": "Micromachines", "year": 2025, "doi": "10.3390/mi16030335", "summary": "Textures one microfluidic channel wall with wedge-shaped grooves written into ma-P 1275G on a Heidelberg tabletop micro maskless aligner (365 nm LED, spatial light modulator), then measures how the resulting height gradient biases dense-emulsion flow.", "note": "Maskless greyscale usage on a Heidelberg uMLA; the paper prints the resist name as 'MAP-1275G'.", "url": "https://doi.org/10.3390/mi16030335" } ], "provenance": { "datasheetUrl": "https://www.ostech.co.jp/wp/wp-content/uploads/2020/11/map1200g_pi_1.pdf", "datasheetVersionOrDate": "ls.18.02.06", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://microresist.de/en/produkt/ma-p-1200g-series/", "what": "microresist.de's ma-P 1200G series page (greyscale variant of the same DNQ/novolak family as ma-P 1200); the basis for classifying ma-P 1275G as dnq-novolak." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "spr220-3", "name": "Megaposit SPR 220-3.0", "manufacturer": "Rohm and Haas Electronic Materials", "productLine": "MEGAPOSIT SPR 220 series", "aliases": [ "SPR220-3.0", "MEGAPOSIT SPR220-3.0", "Shipley SPR220-3.0" ], "tone": null, "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed by the datasheet. The document positions SPR220 for dense lines/spaces resolution, thick-film etch masking, and electroplating molds — no mention of grayscale or partial-exposure profiling.", "status": "active", "successorSlug": null, "summary": "SPR220-3.0 is the 3 µm-nominal grade of Rohm and Haas's MEGAPOSIT SPR 220 series, a general-purpose, broadband/g-line/i-line multiwavelength photoresist covering roughly 2-5 µm depending on spin speed, used for MEMS, plating and etch-mask applications.", "thicknessRange": { "min_um": 2.28, "max_um": 4.62, "basis": "curve-span", "source": "curve-span: the datasheet does not state an achievable thickness range for the SPR220-3.0 grade specifically (only a family-wide '1-30 µm' range spanning all five grades in the Description — that family-wide figure is not this grade's range and is not used here). The range here is the min/max of the SPR220-3.0 curve in Figure 3 (4-inch wafer spin chart) between 6000 rpm and 1500 rpm: 4.62 µm at 1,500 rpm to 2.28 µm at 6,000 rpm, from 10 points at 500 rpm intervals that fit a t∝1/√rpm curve to within 1-3%. The '3.0' in the product name denotes its nominal reference thickness (used as the thickness label in Table 2 and Table 6), not a range." }, "spinCurves": [ { "label": "SPR220-3.0", "points": [ { "rpm": 1500, "um": 4.62 }, { "rpm": 2000, "um": 4 }, { "rpm": 2500, "um": 3.59 }, { "rpm": 3000, "um": 3.23 }, { "rpm": 3500, "um": 3.02 }, { "rpm": 4000, "um": 2.81 }, { "rpm": 4500, "um": 2.66 }, { "rpm": 5000, "um": 2.5 }, { "rpm": 5500, "um": 2.41 }, { "rpm": 6000, "um": 2.28 } ], "source": "read from Figure 3 (p.2), 'Spin Speed Curves on 4\"', of Rohm and Haas \"MEGAPOSIT SPR220 Series Photoresists\" datasheet (ME04N097, Rev. 2, Sept. 2004; UC Davis CNM2 mirror). The chart plots five curves (SPR220-7.0/circle, 4.5/square, 3.0/triangle, 1.5/diamond, 1.2/inverted-triangle), each with 10 markers from 1,500-6,000 rpm. SPR220-3.0 is the filled-triangle trace (3rd of 5), consistent with the series-naming convention where each grade's thickness near 3000 rpm approximates its nominal designation (this trace reads 3.23 µm at 3000 rpm ≈ 'SPR220-3.0'). Figure 3 is an embedded raster image, so this is a figure read; the 10 points fit a t∝1/√rpm curve to within ~1-3%.", "figureRead": true } ], "spinNotes": "Figure 3 is measured on 4-inch substrates. Nominal film thickness may vary slightly with process, equipment, and ambient conditions, per the datasheet's own caveat under \"Coat\", p.2. Coat uniformity is separately reported for the SPR220-7.0 grade only (7.31 µm, standard deviation 0.036 µm across 33 points) — no uniformity figure is published for SPR220-3.0 specifically.", "adhesion": { "hmds": true, "notes": "\"A hexamethyldisilizane (HMDS)-based MICROPOSIT primer is recommended to promote adhesion with substrates that require such treatment. Vacuum vapor priming at 120°C for 30 seconds with concentrated HMDS is recommended.\" Source: \"Substrate\", p.2." }, "rehydration": "Not applicable at SPR220-3.0's nominal 3.0 µm reference thickness. The datasheet's exposure-to-PEB moisture-diffusion hold requirement applies only to \"films above 4 µm\" (minimum 35-minute hold) and films \">12 µm\" (minimum 120-minute hold) — both thicker than this grade's 3.0 µm nominal coat, so no hold time is called for at the reference process point. (See the SPR220-7.0 entry, where this hold is required.) (Source: \"Post-Exposure Bake\" section, p.3)", "softbake": { "temp_c": 115, "time_s": 90, "method": "hotplate", "notes": "\"The recommended softbake process for SPR220 for films up to 4.0 µm is 115°C for 90 seconds on a contact hotplate.\" SPR220-3.0's 3.0 µm nominal thickness falls within this “up to 4.0 µm” bin, so this is a direct (non-ranged) match, not a picked bin midpoint. Table 1 independently confirms the same value for the 1.1-4.0 µm thickness class: \"115°C/90 sec. Contact Hotplate.\"", "source": "\"Softbake\" section, p.2, and Table 1 \"Recommended Process Conditions\" (1.1-4.0 µm column), p.1" }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 310, "source": "Table 2 \"Photospeed and Linearity of Dense Lines/Spaces at Various Thicknesses\", p.1" } ], "basisCopy": "At this grade's nominal 3.0 µm coat, i-line sizing is 310 mJ/cm² and g-line 320 mJ/cm², both for 0.90 µm dense lines. The thick-film guidance for films over 12 µm is a different regime and does not apply here." }, "peb": { "temp_c": 115, "time_s": 90, "notes": "Table 1 gives a single PEB value spanning both thickness classes (1.1-4.0 µm and 4.0-10.0 µm): \"115°C/90 sec. Contact Hotplate.\" PEB runs at the same temperature as softbake, per the \"Post-Exposure Bake\" section text. Separately from the PEB bake itself, thicker films (>4 µm) require a moisture-diffusion hold BEFORE PEB — not applicable to this 3.0 µm grade; see the \"rehydration\" field.", "source": "Table 1 \"Recommended Process Conditions\", p.1, and \"Post-Exposure Bake\" section, p.3" }, "floodExposure": null, "develop": { "developer": "MF-24A (0.24N MIF — metal-ion-free TMAH developer)", "dilution": "0.24N (MF-24A is the 0.24N-normality developer in Rohm and Haas's MF line; SPR220 is \"optimized for 0.24N developers\", with 0.26N (MF-26A) offered as an alternative for thicker films or high-throughput processes)", "time_s": 60, "method": "puddle", "rinse": null, "source": "Table 6 \"Recommended Develop Conditions\" (3.0 µm FT column) and Table 1, p.1 and p.3" }, "hardbake": null, "descum": null, "applications": [ "etch-mask", "electroplating-molding", "mems-structural" ], "etchResistance": "\"Excellent wet and dry etch adhesion\" (Advantages, p.1). Figure 8 (p.4) reports 100:1 etch selectivity in a Bosch DRIE process, demonstrated patterning 2.5-10 µm features to 200 µm deep and 5-20 µm features to 100 µm deep (these etch-depth examples are shown at the SPR220 series level, not attributed to a specific grade). A 1:5 HF wet-etch example (2 µm feature) is also shown on p.1.", "liftoffSuitable": null, "platingSuitable": true, "stripper": "MICROPOSIT REMOVER 1165, two-bath process, each bath at 80°C (176°F): the first bath removes the bulk of the photoresist, the second removes residual traces. Source: \"Photoresist Removal\", p.4.", "storage": "\"Recommended storage for SPR220 is in an upright position in a dry area at 40-60°F (4-15°F). Keep away from oxidizers, acids, and bases. Keep container sealed when not in use.\" (Quoted verbatim, including an apparent unit inconsistency in the source: 40-60°F does not correspond to 4-15°F — the parenthetical is likely a typo for °C in the original document, but is transcribed as printed rather than silently corrected.) Source: \"Storage\", p.4.", "notes": "SPR220-3.0 is the 3 µm-nominal member of the MEGAPOSIT SPR 220 line, a broadband resist usable at g-line (436 nm) or i-line (365 nm) that Rohm and Haas positions for thick-film MEMS, plating-mold, and DRIE-mask work rather than fine-pitch IC lithography. Unlike the thicker SPR220-7.0 grade, films at this 3.0 µm reference thickness stay under the datasheet's 4 µm threshold for the exposure-to-PEB rehydration hold, so processing is comparatively straightforward: softbake, PEB and (per Table 1) develop all run at essentially the textbook single-step conditions. The lineage of this resist family is worth noting for provenance purposes: Shipley Company originated the SPR line, was acquired into Rohm and Haas Electronic Materials (the entity printed on this 2004 datasheet), which was in turn acquired by Dow Chemical (2009), then spun into DuPont Electronics & Imaging, and the MEGAPOSIT/MICROPOSIT/MF brand family is now sold by Kayaku Advanced Materials — the same corporate family that owns MicroChem/KMPR and SU-8. Tone and base chemistry are not stated anywhere in this particular datasheet. Chemistry classified as dnq-novolak from the Dow MEGAPOSIT SPR220-3.0 MSDS composition table (cresol novolak resin + diazo photoactive compound).", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "A comparative study of different thick photoresists for MEMS applications", "authors": "Koukharenko et al.", "journal": "Journal of Materials Science: Materials in Electronics", "year": 2005, "doi": "10.1007/s10854-005-4977-2", "url": "https://doi.org/10.1007/s10854-005-4977-2", "accessedDate": "2026-07-15", "summary": "Benchmarks thick MEMS resists (SPR 220-7, SU-8, Ordyl P-50100 dry film, Diaplate 132) as electroplating molds; SPR 220-7 gives about 50 um molds for alkaline electroplating as an easier-to-strip alternative to SU-8.", "note": "Family-level SPR 220 reference: the study characterizes the thicker SPR 220-7 grade, not the 3.0 grade of this page." } ], "provenance": { "datasheetUrl": "https://research.engineering.ucdavis.edu/cnm2/wp-content/uploads/sites/11/2013/05/SPR220_Data_Sheet.pdf", "datasheetVersionOrDate": "ME04N097, Rev. 2, September 2004 (printed on p.1 and in the footer)", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://asrc.gc.cuny.edu/wp-content/uploads/media/global-assets/Megaposit-SPR-220-3.0-Positive-Photoresist-MSDS.pdf", "what": "Dow MEGAPOSIT SPR220-3.0 MSDS states 'Cresol novolak resin 25.0-35.0%, Diazo Photoactive Compound 1.0-10.0%'; the basis for classifying SPR220-3.0 as dnq-novolak." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "spr220-7", "name": "Megaposit SPR 220-7.0", "min_um": 5.45, "max_um": 52, "doseBasis": null } ], "humanVerified": false }, { "slug": "spr220-7", "name": "Megaposit SPR 220-7.0", "manufacturer": "Rohm and Haas Electronic Materials", "productLine": "MEGAPOSIT SPR 220 series", "aliases": [ "SPR220-7.0", "MEGAPOSIT SPR220-7.0", "Shipley SPR220-7.0" ], "tone": null, "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed by the datasheet. The document positions SPR220 for dense lines/spaces resolution, thick-film etch masking, and electroplating molds — no mention of grayscale or partial-exposure profiling.", "status": "active", "successorSlug": null, "summary": "SPR220-7.0 is the 7 µm-nominal grade of Rohm and Haas's MEGAPOSIT SPR 220 series, a general-purpose, broadband/g-line/i-line multiwavelength photoresist that spin-coats from roughly 5 µm up to 30-50+ µm depending on speed, used for thick-film MEMS, plating and Bosch-etch-mask applications.", "thicknessRange": { "min_um": 5.45, "max_um": 52, "basis": "curve-span", "source": "curve-span: the datasheet does not state an achievable thickness range for the SPR220-7.0 grade specifically (only a family-wide '1-30 µm' range spanning all five grades in the Description, though this grade's own curve exceeds that at low rpm). The range combines the two SPR220-7.0-specific curves published: the thin end (5.45 µm) is from Figure 3 (4-inch wafer) at 6000 rpm; the thick end (52 µm) is from Figure 4 (8-inch wafer, grade-dedicated chart) at 150 rpm. The '7.0' in the product name denotes its nominal reference thickness (used as the thickness label in Table 2 and Table 6), not this full spin-achievable range." }, "spinCurves": [ { "label": "SPR220-7.0 (8\" wafer, Figure 4)", "points": [ { "rpm": 150, "um": 52 }, { "rpm": 250, "um": 39.3 }, { "rpm": 500, "um": 22 }, { "rpm": 750, "um": 16.5 }, { "rpm": 1000, "um": 13.8 }, { "rpm": 1500, "um": 10.5 }, { "rpm": 2000, "um": 9.3 }, { "rpm": 2500, "um": 8.3 } ], "source": "read from figure 4 \"Spin Speed Curve, SPR220-7.0 on 8\"\", p.2 of Rohm and Haas \"MEGAPOSIT SPR220 Series Photoresists\" datasheet (ME04N097, Rev. 2, Sept. 2004; UC Davis CNM2 mirror). This figure plots a single curve for SPR220-7.0 only, so there is no grade-identification ambiguity; all 8 published markers are reported. The datasheet's own text states \"a 375 RPM spin will yield a film thickness of approximately 30 µm,\" which interpolates consistently between this curve's 250 rpm (39.3 µm) and 500 rpm (22 µm) points.", "figureRead": true }, { "label": "SPR220-7.0 (4\" wafer, Figure 3)", "points": [ { "rpm": 1500, "um": 10.1 }, { "rpm": 2000, "um": 9 }, { "rpm": 3000, "um": 7.5 }, { "rpm": 4000, "um": 6.55 }, { "rpm": 5000, "um": 5.9 }, { "rpm": 6000, "um": 5.45 } ], "source": "read from figure 3 \"Spin Speed Curves on 4\"\", p.2 of the same datasheet. Chart plots five curves; SPR220-7.0 identified as the filled-circle series, the topmost (thickest-film) curve, consistent with legend position (listed first) and its numeric name being the highest-viscosity grade shown. 6 of the 10 available markers are reported (1500, 2000, 3000, 4000, 5000, 6000 rpm). Where this chart overlaps figure 4 the two published figures agree within ~4%: 1500 rpm reads 10.1 µm here vs. 10.5 µm on the 8-inch chart, and 2000 rpm reads 9.0 µm here vs. 9.3 µm on the 8-inch chart.", "figureRead": true } ], "spinNotes": "Figure 3 (4-inch wafer) and Figure 4 (8-inch/200 mm wafer, SPR220-7.0 only) are separate empirical curves for the same grade; both are reported above rather than merged, since they come from different substrates/tool runs. Coat uniformity is reported at 7.31 µm: standard deviation 0.036 µm across 33 points (source figure/wafer size for this uniformity measurement is not stated). Nominal film thickness may vary slightly with process, equipment, and ambient conditions, per the datasheet's own caveat under \"Coat\", p.2.", "adhesion": { "hmds": true, "notes": "\"A hexamethyldisilizane (HMDS)-based MICROPOSIT primer is recommended to promote adhesion with substrates that require such treatment. Vacuum vapor priming at 120°C for 30 seconds with concentrated HMDS is recommended.\" Source: \"Substrate\", p.2." }, "rehydration": "\"With thicker films (above 4 µm), a hold time is used between exposure and PEB to allow water (which is necessary to complete the photo-reaction) to diffuse back into the photoresist film. Thick films should use a minimum hold time of 35 minutes.\" SPR220-7.0's 7.0 µm nominal reference thickness is above the 4 µm threshold, so this minimum 35-minute ambient hold between exposure and PEB applies. (The document's 12 µm threshold for a 120-minute hold does not apply at the 7.0 µm nominal thickness, though it would for a thicker coat of this same grade at low rpm.) This is a genuinely easy step to omit by mistake since it sits between two other steps (expose, then PEB) rather than being a bake step itself. (Source: \"Post-Exposure Bake\" section, p.3)", "softbake": { "temp_c": 115, "time_s": 90, "method": "hotplate", "notes": "\"For films greater than 4.0 µm, use a 30 second ramp in temperature (step-down to hotplate) to 115°C and hold for a minimum of 90 seconds.\" SPR220-7.0's 7.0 µm nominal thickness falls in this bin (a direct match, not a picked bin midpoint) — a 30-second temperature step-down ramp precedes the 90-second hold at 115°C. (Films >12 µm instead require a 300-second minimum hold — not applicable at the 7.0 µm nominal thickness.) Table 1 independently confirms for the 4.0-10.0 µm thickness class: \"30 sec. step-down to 115°C/90 sec. Contact Hotplate.\"", "source": "\"Softbake\" section, p.2, and Table 1 \"Recommended Process Conditions\" (4.0-10.0 µm column), p.1" }, "exposureDose": { "doses": [], "basisCopy": "A 7.0 µm film sizes at 470 mJ/cm², but that is a g-line number; the published i-line photospeeds stop at 5.0 µm and 380 mJ/cm², so no i-line figure exists at this grade's full thickness.", "doseVsThickness": [ { "wavelength_nm": 436, "binBasis": "spun-film", "bins": [ { "um_min": 7, "um_max": 7, "mJ_min": 470, "mJ_max": 470 } ], "source": "Table 2 \"Photospeed and Linearity of Dense Lines/Spaces at Various Thicknesses\", p.1 — the g-Line (436 nm) row at a 7.0 µm film thickness, which is this grade's nominal reference thickness (the same thickness label Table 6 uses for it)." } ] }, "peb": { "temp_c": 115, "time_s": 90, "notes": "Table 1 gives a single PEB value spanning both thickness classes (1.1-4.0 µm and 4.0-10.0 µm): \"115°C/90 sec. Contact Hotplate.\" PEB runs at the same temperature as softbake, per the \"Post-Exposure Bake\" section text. This 90-second figure is the PEB bake itself — it is separate from and follows the mandatory 35-minute exposure-to-PEB moisture-diffusion hold required for this grade; see the \"rehydration\" field.", "source": "Table 1 \"Recommended Process Conditions\", p.1, and \"Post-Exposure Bake\" section, p.3" }, "floodExposure": null, "develop": { "developer": "MF-24A (0.24N MIF — metal-ion-free TMAH developer)", "dilution": "0.24N (MF-24A is the 0.24N-normality developer in Rohm and Haas's MF line; SPR220 is \"optimized for 0.24N developers\", with 0.26N (MF-26A) offered as an alternative for thicker films or high-throughput processes)", "time_s": 120, "method": "puddle", "rinse": null, "source": "Table 6 \"Recommended Develop Conditions\" (7.0 µm FT column), p.3" }, "hardbake": null, "descum": null, "applications": [ "etch-mask", "electroplating-molding", "mems-structural" ], "etchResistance": "\"Excellent wet and dry etch adhesion\" (Advantages, p.1). Figure 8 (p.4) reports 100:1 etch selectivity in a Bosch DRIE process, demonstrated patterning 2.5-10 µm features to 200 µm deep and 5-20 µm features to 100 µm deep. The p.1 application photo (\"Etched Trenches (Bosch Process), 4-10 µm Features up to 100 µm deep\") shows the same class of result. (These etch-depth examples are shown at the SPR220 series level, not attributed to a specific grade.)", "liftoffSuitable": null, "platingSuitable": true, "stripper": "MICROPOSIT REMOVER 1165, two-bath process, each bath at 80°C (176°F): the first bath removes the bulk of the photoresist, the second removes residual traces. Source: \"Photoresist Removal\", p.4.", "storage": "\"Recommended storage for SPR220 is in an upright position in a dry area at 40-60°F (4-15°F). Keep away from oxidizers, acids, and bases. Keep container sealed when not in use.\" (Quoted verbatim, including an apparent unit inconsistency in the source: 40-60°F does not correspond to 4-15°F — the parenthetical is likely a typo for °C in the original document, but is transcribed as printed rather than silently corrected.) Source: \"Storage\", p.4.", "notes": "SPR220-7.0 is the thickest-nominal grade in the MEGAPOSIT SPR 220 line pictured in this datasheet, spin-coating from roughly 5 µm up to 50+ µm depending on speed and wafer size (two separately measured curves, on 4-inch and 8-inch wafers, are both captured above and agree within a few percent where they overlap). Its most easily-missed processing step is the mandatory minimum 35-minute ambient hold between exposure and PEB — water must diffuse back into the film to complete the photoreaction, and skipping this wait is a well-known way to get an incomplete or inconsistent PEB result with this resist family. The exposure-dose table only publishes i-Line numbers up to a 5.0 µm reference thickness, so there is no clean i-Line dose match at this grade's 7.0 µm nominal thickness; the nearest published numbers (g-Line 470 mJ/cm² at exactly 7.0 µm, or i-Line 380 mJ/cm² at 5.0 µm) each mismatch on either wavelength or thickness, and are quoted only as context. The lineage of this resist family is worth noting for provenance purposes: Shipley Company originated the SPR line, was acquired into Rohm and Haas Electronic Materials (the entity printed on this 2004 datasheet), which was in turn acquired by Dow Chemical (2009), then spun into DuPont Electronics & Imaging, and the MEGAPOSIT/MICROPOSIT/MF brand family is now sold by Kayaku Advanced Materials — the same corporate family that owns MicroChem/KMPR and SU-8. Tone and base chemistry are not stated anywhere in this particular datasheet. Chemistry classified as dnq-novolak from the Dow MEGAPOSIT SPR220-3.0 MSDS composition table (same MEGAPOSIT SPR220 line: cresol novolak resin + diazo photoactive compound).", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Realization of electroplating molds with thick positive SPR 220-7 photoresist", "authors": "Kukharenka et al.", "journal": "Journal of Materials Science: Materials in Electronics", "year": 2003, "doi": "10.1023/A:1023923911921", "url": "https://doi.org/10.1023/A:1023923911921", "accessedDate": "2026-07-15", "summary": "Realizes 34-54 um multi-coat SPR 220-7 films as electroplating molds for MEMS metal structures." }, { "type": "paper", "title": "A comparative study of different thick photoresists for MEMS applications", "authors": "Koukharenko et al.", "journal": "Journal of Materials Science: Materials in Electronics", "year": 2005, "doi": "10.1007/s10854-005-4977-2", "url": "https://doi.org/10.1007/s10854-005-4977-2", "accessedDate": "2026-07-15", "summary": "Benchmarks thick MEMS resists (SPR 220-7, SU-8, Ordyl P-50100 dry film, Diaplate 132) as electroplating molds; SPR 220-7 gives about 50 um molds for alkaline electroplating as an easier-to-strip alternative to SU-8." } ], "troubleshooting": [ { "q": "Why does SPR 220-7.0 need a wait between exposure and PEB?", "a": "Because it is a thick film: water must diffuse back into the resist to complete the photoreaction, so films above 4 µm need a minimum 35-minute ambient hold between exposure and PEB. SPR 220-7.0's 7.0 µm nominal thickness is above that threshold, so the 35-minute hold applies (a thicker low-rpm coat past 12 µm would need 120 minutes). It sits between two steps rather than being a bake, so it is easy to skip — don't.", "source": "Rohm and Haas MEGAPOSIT SPR220 Series datasheet (ME04N097, Rev. 2, Sept. 2004) — Post-Exposure Bake section, p.3" }, { "q": "What softbake and PEB does SPR 220-7.0 use?", "a": "For films over 4.0 µm — which includes the 7.0 µm nominal grade — soft bake with a 30-second temperature step-down ramp to 115°C, then hold at least 90 seconds on a contact hotplate. PEB runs at the same temperature: 115°C for 90 seconds. The PEB bake is separate from, and follows, the mandatory 35-minute exposure-to-PEB moisture-diffusion hold.", "source": "Rohm and Haas MEGAPOSIT SPR220 Series datasheet (ME04N097, Rev. 2, Sept. 2004) — Softbake and Post-Exposure Bake sections + Table 1, p.1–3" }, { "q": "Which developer and develop time does SPR 220-7.0 use?", "a": "MF-24A, a 0.24N metal-ion-free TMAH developer, applied as a 60/60-second double spray puddle — two sequential 60-second puddles, 120 seconds total. SPR 220 is optimized for 0.24N developers; MF-26A (0.26N) is offered as an alternative for thicker films or high-throughput processes. No rinse chemistry is specified in the datasheet.", "source": "Rohm and Haas MEGAPOSIT SPR220 Series datasheet (ME04N097, Rev. 2, Sept. 2004) — Table 6 Recommended Develop Conditions (7.0 µm FT), p.3" }, { "q": "What exposure dose should I use for SPR 220-7.0?", "a": "The datasheet publishes no clean i-line dose at 7.0 µm — its i-line rows stop at 5.0 µm (380 mJ/cm²), and the nearest exact-thickness figure is g-line 470 mJ/cm² at 7.0 µm. Neither matches on both wavelength and thickness, so treat them as context and calibrate on-tool. For films thicker than 12 µm the datasheet gives 700–1,300 mJ/cm² measured at 365 nm.", "source": "Rohm and Haas MEGAPOSIT SPR220 Series datasheet (ME04N097, Rev. 2, Sept. 2004) — Table 2 photospeed + thick-film exposure guidance, p.1–2" } ], "provenance": { "datasheetUrl": "https://research.engineering.ucdavis.edu/cnm2/wp-content/uploads/sites/11/2013/05/SPR220_Data_Sheet.pdf", "datasheetVersionOrDate": "ME04N097, Rev. 2, September 2004 (printed on p.1 and in the footer)", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://asrc.gc.cuny.edu/wp-content/uploads/media/global-assets/Megaposit-SPR-220-3.0-Positive-Photoresist-MSDS.pdf", "what": "Dow MEGAPOSIT SPR220-3.0 MSDS (same MEGAPOSIT SPR220 line) states 'Cresol novolak resin 25.0-35.0%, Diazo Photoactive Compound 1.0-10.0%'; the basis for classifying SPR220-7.0 as dnq-novolak." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "spr220-3", "name": "Megaposit SPR 220-3.0", "min_um": 2.28, "max_um": 4.62, "doseBasis": "310 mJ/cm² @ 365 nm" } ], "humanVerified": false }, { "slug": "s1805", "name": "Microposit S1805", "manufacturer": "Rohm and Haas Electronic Materials", "productLine": "MICROPOSIT S1800 G2 Series", "aliases": [ "S1805", "S1805 G2", "MICROPOSIT S1805 G2" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not discussed. The document only describes single-layer binary IC masking properties (Figure 1 'Masking Linearity SEMS', Figure 7 masking-linearity plot); no grayscale or gray-tone lithography capability is claimed anywhere in the document.", "status": "active", "successorSlug": null, "summary": "MICROPOSIT S1805 G2 is the thinnest grade of the MICROPOSIT S1800 G2 positive photoresist series, coating roughly 0.41–0.67 µm — the pick when a design needs the series' finest single-layer film and tightest linewidth control rather than thickness.", "thicknessRange": null, "spinCurves": [ { "label": "S1805 G2", "points": [ { "rpm": 2000, "um": 0.67 }, { "rpm": 3000, "um": 0.55 }, { "rpm": 4000, "um": 0.5 }, { "rpm": 5000, "um": 0.47 }, { "rpm": 6000, "um": 0.44 }, { "rpm": 7000, "um": 0.41 } ], "source": "read from figure, 'MICROPOSIT S1800 G2 Photoresist Undyed Series Spin Speed Curves' (Figure 2), p.2 of MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041, Rev. 0, October 2006); identified as the lowest of four plotted traces (cross marker, legend order S1818/S1813/S1811/S1805 top-to-bottom by thickness — the four curves do not cross across the plotted range); read at gridline/marker crossings every 1,000 rpm from 2,000–7,000 rpm off a linear-linear chart (thickness 0–40,000 Å, spin speed 1,000–8,000 rpm); no numeric table accompanies the figure so no independent point-value anchor exists in the document — visual chart-reading only, typical uncertainty ~10–15%.", "figureRead": true } ], "spinNotes": "Figure 2 ('MICROPOSIT S1800 G2 Photoresist Undyed Series Spin Speed Curves', p.2) plots four traces — S1818 G2, S1813 G2, S1811 G2, S1805 G2 — on one axis (spin speed 1,000–8,000 rpm vs photoresist thickness 0–40,000 Å), each carrying a distinct legend marker (diamond, triangle, square, cross respectively, in that order top-to-bottom by thickness) and, because the four curves do not cross across the plotted range, S1805 G2 (cross marker) is identified as the lowest trace at every spin speed. The trace plotted here was read from gridline/marker crossings at 1,000 rpm intervals from 2,000–7,000 rpm; no numeric thickness-vs-rpm table accompanies the figure, so there is no independent point-value anchor and the values carry typical chart-reading uncertainty of about 10–15%. Table 2 (p.2) records that Figure 2's coatings used an SVG 81 coater and a 115°C/60 sec hotplate softbake on silicon, measured on a Nanometrics 210 — that condition applies to this grade's trace and is recorded under softbake below. The document states maximum coating uniformity is 'typically attained between the spin speeds of 3,500–5,500 rpm' (p.2, series-wide statement, not S1805-specific). No rehydration hold or edge-bead handling is discussed anywhere in the document.", "adhesion": { "hmds": true, "notes": "\"MICROPOSIT S1800 G2 Series Photoresist work well with the hexamethyldisilazane-based MICROPOSIT Primers. Concentrated MICROPOSIT Primer is recommended when vacuum vapor priming. Diluted primer is recommended for liquid phase priming applications.\" (SUBSTRATE PREPARATION, p.2 — series-wide statement, not grade-specific)." }, "rehydration": null, "softbake": { "temp_c": 115, "time_s": 60, "method": "hotplate", "notes": "From Table 2 ('Process Conditions, Refer to Figure 2'): coat tool SVG 81, softbake 115°C/60 sec hotplate, measured on a Nanometrics 210. This is the condition used to generate the Figure 2 spin-speed-curve trace that includes S1805 G2; it is not a separately stated softbake recommendation outside that figure.", "source": "Table 2, p.2 of MICROPOSIT S1800 G2 SERIES PHOTORESISTS, ME06N041, Rev. 0, October 2006" }, "exposureDose": { "doses": [], "basisCopy": "Every quantified exposure result on this sheet — sizing energy, contrast curve, exposure and focus latitude — was run on S1813 G2. For S1805 it gives only the series exposure window, 350 to 450 nm, optimized at 436 nm." }, "peb": null, "floodExposure": null, "develop": null, "hardbake": null, "descum": null, "applications": [], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": null, "stripper": "\"Residue-free photoresist removal using standard MICROPOSIT removers\" (ADVANTAGES section, p.1) — no specific remover product is named.", "storage": "\"Store products in tightly closed original containers at temperatures recommended on the product label.\" (STORAGE section, p.5) — no specific temperature is printed in the document itself.", "notes": "This grade appears exactly once in the document: as the lowest of four traces (alongside S1811, S1813 and S1818 G2) on the undyed-series film-thickness-vs-spin-speed chart (Figure 2, p.2). Choose S1805 G2 over the thicker S1811, S1813 and S1818 grades when the process needs a thin resist layer and tight resolution rather than film thickness — on the same g-line process and develop chemistry it lays down the least film of the four. No dose, develop time, or lithographic-performance data (contrast curve, Dill parameters, absorbance spectrum, masking linearity, exposure/focus latitude — Figures 4–9, Tables 4–9) is published for S1805 specifically; every one of those figures and tables explicitly names MICROPOSIT S1813 G2 as the tested grade, and none of that data may be borrowed here. The document states the S1800 G2 system broadly is optimized for g-line (436 nm) exposure and usable across 350–450 nm, is compatible with HMDS-based MICROPOSIT primers, and works with both metal-ion-free (MF-319 family) and metal-ion-bearing MICROPOSIT developers, but none of those statements carry an S1805-specific number. This recipe replaces an earlier extraction made from the superseded circa-1993 Shipley 'MPR S1800 1093' edition, per a WL decision on 2026-07-10; the S1800 line traces from Shipley through Rohm and Haas Electronic Materials (publisher of this G2 edition) to Dow, DuPont, and today's Kayaku Advanced Materials. Chemistry classified as dnq-novolak from the Dow/Rohm and Haas S1818 MSDS composition table (mixed cresol novolak resin + diazo photoactive compound) and Kayaku's S1800 G2 series-wide statement.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "accessedDate": "2026-07-16", "title": "Microscopic geared metamachines", "authors": "Wang et al.", "journal": "Nature Communications", "year": 2025, "doi": "10.1038/s41467-025-62869-6", "summary": "Defines light-driven microscopic gear trains by maskless direct laser writing (Heidelberg MLA 150) into an LOR3A/S1805 bilayer, with S1805 as the top positive imaging layer and LOR3A as the sacrificial release layer for Cr/Au lift-off.", "note": "Maskless direct-write usage: S1805 is the imaging layer, patterned on an MLA 150 maskless aligner.", "url": "https://doi.org/10.1038/s41467-025-62869-6" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "A Calibration Method for the Resolution of 2D TPP Laser Direct Writing", "authors": "Xie et al.", "journal": "Micromachines", "year": 2023, "doi": "10.3390/mi14010212", "summary": "Measures the voxel width and length written into S1805 by two-photon-polymerization laser direct writing across a matrix of laser powers and scan speeds, then fits a second-order regression relating machining resolution to those inputs.", "note": "Direct-write process window: S1805 is the resist being characterized, not merely a step in someone else's flow.", "url": "https://doi.org/10.3390/mi14010212" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Generation of arbitrarily patterned polarizers using 2-photon polymerization", "authors": "Ganazhapa et al.", "journal": "Scientific Reports", "year": 2024, "doi": "10.1038/s41598-024-73946-z", "summary": "Compares S1805 G2 against SU-8 as a two-photon-polymerization direct-write medium for liquid-crystal alignment layers; the S1805 relief reached a polarizer contrast ratio of 37 versus 14 for SU-8, at 63% alignment uniformity.", "note": "Direct-write usage, and an unusual one: the developed resist relief serves as an LC alignment layer.", "url": "https://doi.org/10.1038/s41598-024-73946-z" } ], "troubleshooting": [ { "q": "How thick a film does MICROPOSIT S1805 G2 coat?", "a": "S1805 G2 is the thinnest of the four undyed S1800 G2 grades. On the Figure 2 spin-speed chart its trace runs from about 0.67 µm at 2,000 rpm down to 0.41 µm at 7,000 rpm. Maximum coating uniformity is typically attained between 3,500 and 5,500 rpm (a series-wide statement). These points are a figure read with roughly ±10–15% uncertainty, so confirm the target thickness on-tool.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Figure 2 undyed-series spin-speed curves, p.2" }, { "q": "What exposure dose should I use for S1805 G2?", "a": "This datasheet publishes no exposure dose for S1805. The only quantified dose in the document — 150 mJ/cm² sizing energy — is explicitly attributed to S1813 G2 and must not be borrowed for S1805. The series is exposable across 350–450 nm with properties optimized for 436 nm (g-line); pick a working dose by characterizing on-tool.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — EXPOSURE section p.3; Table 9 (S1813-specific), p.4" }, { "q": "What soft bake does S1805 G2 need?", "a": "The only soft-bake condition tied to S1805 is 115°C for 60 s on a hotplate — the coat condition used to generate its Figure 2 spin-speed trace (SVG 81 coater, measured on a Nanometrics 210). It is a documented test condition, not a separately stated grade-specific recommendation, so treat it as a starting point rather than an optimized bake.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Table 2, p.2" }, { "q": "Does S1805 G2 need HMDS priming?", "a": "This is a family-generic answer — the datasheet gives no S1805-specific priming step. The S1800 G2 series works well with hexamethyldisilazane-based MICROPOSIT Primers: concentrated primer for vacuum vapour priming, diluted primer for liquid-phase priming. Prime oxide-forming substrates before coating.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — SUBSTRATE PREPARATION, p.2" }, { "q": "Why is there so little process data specific to S1805?", "a": "S1805 appears only once in this datasheet — as the lowest trace on the undyed-series spin-speed chart (Figure 2). Every contrast curve, Dill parameter, masking-linearity and exposure/focus-latitude figure names S1813 G2 as the tested grade, so none of that data may be applied to S1805. Its spin curve is the only grade-specific quantitative data published.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Figures 4–9 / Tables 4–9 (all S1813-specific)" } ], "provenance": { "datasheetUrl": "https://www.nanophys.kth.se/nanolab/resists/S1813/Microposit_S1800_G2_Serie.pdf", "datasheetVersionOrDate": "ME06N041, Rev. 0, October 2006", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://amolf.nl/wp-content/uploads/2016/09/datasheets_S1800.pdf", "what": "AMOLF-hosted mirror of the superseded ~1993 Shipley 'MPR S1800 1093' edition of the S1800 datasheet, archived here per the 2026-07-10 WL decision to re-extract S1805 from the current G2 edition instead; retained as a reference, not a data source for this recipe." }, { "url": "https://kayakuam.com/products/microposit-s1800-g2-series-photoresists/", "what": "Kayaku's MICROPOSIT S1800 G2 series page states the series-wide formulation (mixed cresol novolak resin + diazo photoactive compound); used as the basis for classifying S1805 as dnq-novolak, corroborated by the Dow/Rohm and Haas S1818 MSDS composition table." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "s1813", "name": "S1813", "min_um": 1.03, "max_um": 1.9, "doseBasis": "150 mJ/cm² @ 436 nm" }, { "slug": "s1818", "name": "Microposit S1818", "min_um": null, "max_um": null, "doseBasis": null }, { "slug": "s1822", "name": "S1822", "min_um": null, "max_um": null, "doseBasis": null } ], "humanVerified": false }, { "slug": "s1818", "name": "Microposit S1818", "manufacturer": "Rohm and Haas Electronic Materials", "productLine": "MICROPOSIT S1800 G2 Series", "aliases": [ "S1818", "S1818 G2", "MICROPOSIT S1818 G2" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not discussed. The document only describes single-layer binary IC masking properties (Figure 1 'Masking Linearity SEMS', Figure 7 masking-linearity plot); no grayscale or gray-tone lithography capability is claimed anywhere in the document.", "status": "active", "successorSlug": null, "summary": "MICROPOSIT S1818 G2 is the thick-film grade of the MICROPOSIT S1800 G2 positive photoresist series, coating roughly 1.5–2.65 µm — chosen for the heaviest single S1800 coat, giving deeper etch masking or taller step coverage than the thinner grades.", "thicknessRange": null, "spinCurves": [ { "label": "S1818 G2", "points": [ { "rpm": 2000, "um": 2.65 }, { "rpm": 3000, "um": 2.15 }, { "rpm": 4000, "um": 1.85 }, { "rpm": 5000, "um": 1.7 }, { "rpm": 6000, "um": 1.6 }, { "rpm": 7000, "um": 1.5 } ], "source": "read from figure, 'MICROPOSIT S1800 G2 Photoresist Undyed Series Spin Speed Curves' (Figure 2), p.2 of MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041, Rev. 0, October 2006); identified as the highest of four plotted traces (diamond marker, legend order S1818/S1813/S1811/S1805 top-to-bottom by thickness — the four curves do not cross across the plotted range); read at gridline/marker crossings every 1,000 rpm from 2,000–7,000 rpm off a linear-linear chart (thickness 0–40,000 Å, spin speed 1,000–8,000 rpm); no numeric table accompanies the figure so no independent point-value anchor exists in the document — visual chart-reading only, typical uncertainty ~10–15%.", "figureRead": true } ], "spinNotes": "Figure 2 ('MICROPOSIT S1800 G2 Photoresist Undyed Series Spin Speed Curves', p.2) plots four traces — S1818 G2, S1813 G2, S1811 G2, S1805 G2 — on one axis (spin speed 1,000–8,000 rpm vs photoresist thickness 0–40,000 Å), each carrying a distinct legend marker (diamond, triangle, square, cross respectively, in that order top-to-bottom by thickness) and, because the four curves do not cross across the plotted range, S1818 G2 (diamond marker) is identified as the highest trace at every spin speed. The trace plotted here was read from gridline/marker crossings at 1,000 rpm intervals from 2,000–7,000 rpm; no numeric thickness-vs-rpm table accompanies the figure, so there is no independent point-value anchor and the values carry typical chart-reading uncertainty of about 10–15%. Table 2 (p.2) records that Figure 2's coatings used an SVG 81 coater and a 115°C/60 sec hotplate softbake on silicon, measured on a Nanometrics 210 — that condition applies to this grade's trace and is recorded under softbake below. The document states maximum coating uniformity is 'typically attained between the spin speeds of 3,500–5,500 rpm' (p.2, series-wide statement, not S1818-specific). No rehydration hold or edge-bead handling is discussed anywhere in the document.", "adhesion": { "hmds": true, "notes": "\"MICROPOSIT S1800 G2 Series Photoresist work well with the hexamethyldisilazane-based MICROPOSIT Primers. Concentrated MICROPOSIT Primer is recommended when vacuum vapor priming. Diluted primer is recommended for liquid phase priming applications.\" (SUBSTRATE PREPARATION, p.2 — series-wide statement, not grade-specific)." }, "rehydration": null, "softbake": { "temp_c": 115, "time_s": 60, "method": "hotplate", "notes": "From Table 2 ('Process Conditions, Refer to Figure 2'): coat tool SVG 81, softbake 115°C/60 sec hotplate, measured on a Nanometrics 210. This is the condition used to generate the Figure 2 spin-speed-curve trace that includes S1818 G2; it is not a separately stated softbake recommendation outside that figure.", "source": "Table 2, p.2 of MICROPOSIT S1800 G2 SERIES PHOTORESISTS, ME06N041, Rev. 0, October 2006" }, "exposureDose": { "doses": [], "basisCopy": "Exposure is optimized at 436 nm across the S1800 G2 series and usable from 350 to 450 nm, but that window is all S1818 gets: the sheet's dose numbers were measured on S1813 and belong to it." }, "peb": null, "floodExposure": null, "develop": null, "hardbake": null, "descum": null, "applications": [], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": null, "stripper": "\"Residue-free photoresist removal using standard MICROPOSIT removers\" (ADVANTAGES section, p.1) — no specific remover product is named.", "storage": "\"Store products in tightly closed original containers at temperatures recommended on the product label.\" (STORAGE section, p.5) — no specific temperature is printed in the document itself.", "notes": "This grade appears exactly once in the document: as the highest of four traces (alongside S1805, S1811 and S1813 G2) on the undyed-series film-thickness-vs-spin-speed chart (Figure 2, p.2). Pick S1818 G2 over its thinner S1805/S1811/S1813 siblings when the process needs the most film a single S1800 G2 coat can give — it sits at the top of the series' spin-speed chart, coating thickest of the four undyed grades at any given speed. No dose, develop time, or lithographic-performance data (contrast curve, Dill parameters, absorbance spectrum, masking linearity, exposure/focus latitude — Figures 4–9, Tables 4–9) is published for S1818 specifically; every one of those figures and tables explicitly names MICROPOSIT S1813 G2 as the tested grade, and none of that data may be borrowed here. The document states the S1800 G2 system broadly is optimized for g-line (436 nm) exposure and usable across 350–450 nm, is compatible with HMDS-based MICROPOSIT primers, and works with both metal-ion-free (MF-319 family) and metal-ion-bearing MICROPOSIT developers, but none of those statements carry an S1818-specific number. This recipe replaces an earlier extraction made from the superseded circa-1993 Shipley 'MPR S1800 1093' edition, per a WL decision on 2026-07-10; the S1800 line traces from Shipley through Rohm and Haas Electronic Materials (publisher of this G2 edition) to Dow, DuPont, and today's Kayaku Advanced Materials. Chemistry classified as dnq-novolak directly from the Dow/Rohm and Haas MICROPOSIT S1818 MSDS composition table (mixed cresol novolak resin + diazo photoactive compound).", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "accessedDate": "2026-07-16", "title": "Dissipative charge transport in organic mixed ionic-electronic conductor channels", "authors": "Bonafe et al.", "journal": "Nature Communications", "year": 2025, "doi": "10.1038/s41467-025-57528-9", "summary": "Patterns Microposit S1818 (4000 rpm for 60 s, 110 C for 1 min) by maskless direct-write lithography on an ML3 Microwriter to define metal contacts, then uses a second S1818 layer spun at 2000 rpm as the lift-off stencil for a PEDOT:PSS transistor channel.", "note": "Maskless direct-write usage on an ML3 Microwriter; documents S1818 in both a contact-patterning and a lift-off role.", "url": "https://doi.org/10.1038/s41467-025-57528-9" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Fabrication methods for high reflectance dielectric-metal point contact rear mirror for optoelectronic devices", "authors": "Arulanandam et al.", "journal": "MethodsX", "year": 2022, "doi": "10.1016/j.mex.2022.101898", "summary": "A methods paper that prints its full Shipley S1818 spin-coat, photolithography and strip recipe as a step table, using the resist to open vias through a dielectric rear-mirror stack and to mask the subsequent electroplating step.", "note": "Unusually explicit process record: the S1818 recipe is published as a step table rather than buried in prose.", "url": "https://doi.org/10.1016/j.mex.2022.101898" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Ultrathin Microlens Arrays for Dynamic Beam Shaping Based on 3D Lithography", "authors": "Cheng et al.", "journal": "Micromachines", "year": 2026, "doi": "10.3390/mi17020250", "summary": "Selects S1818 as the thin-film resist for a 3D-lithography microlens array, targeting a coat of roughly 1.6 um so that a 624 nm resist relief transfers, at the established etch selectivity, into an 800 nm structure depth in the substrate.", "note": "Shows S1818 used for 3D relief patterning and etch transfer, not only binary masking.", "url": "https://doi.org/10.3390/mi17020250" } ], "troubleshooting": [ { "q": "How thick a film does MICROPOSIT S1818 G2 coat?", "a": "S1818 G2 is the thickest of the four undyed S1800 G2 grades — the top trace on the Figure 2 spin-speed chart. It runs from about 2.65 µm at 2,000 rpm down to 1.5 µm at 7,000 rpm. Maximum coating uniformity is typically attained between 3,500 and 5,500 rpm (a series-wide statement). These points are a figure read with roughly ±10–15% uncertainty, so confirm the target thickness on-tool.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Figure 2 undyed-series spin-speed curves, p.2" }, { "q": "What exposure dose should I use for S1818 G2?", "a": "This datasheet publishes no exposure dose for S1818. The only quantified dose — 150 mJ/cm² sizing energy — is explicitly attributed to S1813 G2 and must not be borrowed for S1818. The series is exposable across 350–450 nm with properties optimized for 436 nm (g-line); pick a working dose by characterizing on-tool.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — EXPOSURE section p.3; Table 9 (S1813-specific), p.4" }, { "q": "What soft bake does S1818 G2 need?", "a": "The only soft-bake condition tied to S1818 is 115°C for 60 s on a hotplate — the coat condition used to generate its Figure 2 spin-speed trace (SVG 81 coater, measured on a Nanometrics 210). It is a documented test condition, not a separately stated grade-specific recommendation, so treat it as a starting point rather than an optimized bake.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Table 2, p.2" }, { "q": "Does S1818 G2 need HMDS priming?", "a": "This is a family-generic answer — the datasheet gives no S1818-specific priming step. The S1800 G2 series works well with hexamethyldisilazane-based MICROPOSIT Primers: concentrated primer for vacuum vapour priming, diluted primer for liquid-phase priming. Prime oxide-forming substrates before coating.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — SUBSTRATE PREPARATION, p.2" }, { "q": "Why is there so little process data specific to S1818?", "a": "S1818 appears only once in this datasheet — as the highest trace on the undyed-series spin-speed chart (Figure 2). Every contrast curve, Dill parameter, masking-linearity and exposure/focus-latitude figure names S1813 G2 as the tested grade, so none of that data may be applied to S1818. Its spin curve is the only grade-specific quantitative data published.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Figures 4–9 / Tables 4–9 (all S1813-specific)" } ], "provenance": { "datasheetUrl": "https://www.nanophys.kth.se/nanolab/resists/S1813/Microposit_S1800_G2_Serie.pdf", "datasheetVersionOrDate": "ME06N041, Rev. 0, October 2006", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://amolf.nl/wp-content/uploads/2016/09/datasheets_S1800.pdf", "what": "AMOLF-hosted mirror of the superseded ~1993 Shipley 'MPR S1800 1093' edition of the S1800 datasheet, archived here per the 2026-07-10 WL decision to re-extract S1818 from the current G2 edition instead; retained as a reference, not a data source for this recipe." }, { "url": "https://aggiefab.tamu.edu/wp-content/uploads/2021/04/Microposit-S1818-G2-Positive-Photoresist-MSDS.pdf", "what": "Dow/Rohm and Haas MICROPOSIT S1818 MSDS states 'Mixed cresol novolak resin 15.0-25.0%, Diazo Photoactive Compound 1.0-10.0%'; the basis for classifying S1818 as dnq-novolak." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "s1813", "name": "S1813", "min_um": 1.03, "max_um": 1.9, "doseBasis": "150 mJ/cm² @ 436 nm" }, { "slug": "s1805", "name": "Microposit S1805", "min_um": null, "max_um": null, "doseBasis": null }, { "slug": "s1822", "name": "S1822", "min_um": null, "max_um": null, "doseBasis": null } ], "humanVerified": false }, { "slug": "mr-dwl-40", "name": "mr-DWL 40", "manufacturer": "micro resist technology GmbH", "productLine": "mr-DWL series", "aliases": [ "mrDWL40", "mr-DWL40" ], "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Document never uses the word 'greyscale' for mr-DWL. It markets mr-DWL for 'Direct Laser Writing (DLW) @ 405 nm & Two Photon Polymerization (2PP)' — arbitrary focused-beam 3D structuring — which is a related but distinct capability from continuous dose-modulated greyscale lithography, and is not described as such here.", "status": "active", "successorSlug": null, "summary": "mr-DWL 40 is the mid-thickness grade of micro resist technology's mr-DWL negative-tone resist series, formulated for 405 nm direct laser writing (DLW) and two-photon polymerization (2PP), sold ready-to-use for coatings from 20 to 100 µm.", "thicknessRange": { "min_um": 20, "max_um": 100, "basis": "stated", "source": "stated — the flyer's mr-DWL table (p.4) lists 'mr-DWL 40: 20 µm → 100 µm' as the ready-to-use film-thickness range for this grade specifically (alongside mr-DWL 5: 3-12 µm and mr-DWL 100: 20-150 µm)." }, "spinCurves": [], "spinNotes": "No spin-speed-vs-thickness table or figure is published for mr-DWL anywhere in this flyer — only the stated achievable film-thickness range per grade. No accel, dispense, or edge-bead guidance is given either. This is expected: the source is a multi-series marketing flyer, not a technical datasheet.", "adhesion": { "hmds": null, "notes": "Not addressed in this flyer." }, "rehydration": null, "softbake": null, "exposureDose": { "doses": [], "basisCopy": "mr-DWL 40 is sold for 405 nm direct laser writing, but no dose is published at any wavelength — only a qualitative claim of high sensitivity above 400 nm, and an absorption curve with no dose calibration on its axis." }, "peb": null, "floodExposure": null, "develop": { "developer": "mr-Dev 600", "dilution": null, "time_s": null, "method": null, "rinse": null, "source": "mr-DWL table, p.4 of Negative Photoresists flyer" }, "hardbake": null, "descum": null, "applications": [ "etch-mask", "electroplating-molding", "general-prototyping", "mems-structural" ], "etchResistance": "\"Etch mask for wet and dry etch processes\" (Main applications, mr-DWL section, p.4).", "liftoffSuitable": null, "platingSuitable": true, "stripper": null, "storage": null, "notes": "mr-DWL 40 is the mid-thickness grade of micro resist technology's mr-DWL negative-tone resist series, formulated for 405 nm exposure in direct laser writing (DLW) and two-photon polymerization (2PP) tools, and sold ready-to-use for coatings from 20 to 100 µm. The only source retrievable for this SKU is a multi-series marketing flyer rather than a full technical datasheet, so process parameters a TDS would normally publish — softbake, exposure dose, post-exposure bake, and a spin-speed-vs-thickness curve — are not stated in it; mr-DWL's own TDS is served behind a non-guessable microresist.de download link and was not retrievable. The flyer names mr-Dev 600 as the developer (solvent-based) but gives no dilution, time, or method. Because mr-DWL is marketed specifically for 405 nm direct-write exposure, its h-line dose could in principle be the operationally relevant one, but no dose value in mJ/cm² is published for this SKU in this document, so no dose is quoted for it. Chemistry classified as epoxy from microresist.de's description of mr-DWL as chemically amplified negative tone sharing SU-8's advantageous properties, corroborated by peer-reviewed literature grouping SU-8 and mr-DWL as epoxy-based photoresists.", "developerFamily": "solvent", "references": [ { "type": "paper", "accessedDate": "2026-07-16", "title": "Pneumatic Microballoons for Active Control of the Vibration-Induced Flow", "authors": "Sato et al.", "journal": "Micromachines", "year": 2023, "doi": "10.3390/mi14112010", "summary": "Builds the master mold for a pneumatic microballoon actuator's air-channel structures in mr-DWL 40, patterned by direct lithography on a DL-1000 maskless writer, then replicates the mold in PDMS.", "note": "Grade-exact and maskless: mr-DWL 40 written on a DL-1000 direct-write tool, the exposure mode this resist is formulated for.", "url": "https://doi.org/10.3390/mi14112010" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Portrait of intense communications within microfluidic neural networks", "authors": "Dupuit et al.", "journal": "Scientific Reports", "year": 2023, "doi": "10.1038/s41598-023-39477-9", "summary": "Lithographs neuron culture chambers and microchannels in two mr-DWL layers of 40 um and 5 um using backside alignment, hard-bakes the mold at 180 C, and casts PDMS from it to guide cortical network growth.", "note": "Grade-exact for the 40 um layer; shows mr-DWL 40 stacked with the thinner mr-DWL 5 grade in a single mold.", "url": "https://doi.org/10.1038/s41598-023-39477-9" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Effect of design geometry, exposure energy, cytophilic molecules, cell type and load in fabrication of single-cell arrays using micro-contact printing", "authors": "Bhujbal et al.", "journal": "Scientific Reports", "year": 2020, "doi": "10.1038/s41598-020-72080-w", "summary": "Maps how exposure energy on an MLA-150 maskless aligner changes the transferred feature dimensions of an mr-DWL negative resist, then stamps the resulting PDMS moulds into single-cell arrays.", "note": "PARTLY GRADE-EXACT: the study characterized dose on mr-DWL 5 (the thin grade) for its first two designs and used mr-DWL 40 -- this entry's grade -- for its third, but inferred the 40 um dose from the mr-DWL 5 curve rather than characterizing it independently. So the MLA-150 exposure-energy trend is direct evidence for the series, while the 40 um dose values inherit that inference: dose scales with thickness. Characterize dose on-tool.", "url": "https://doi.org/10.1038/s41598-020-72080-w" } ], "provenance": { "datasheetUrl": "https://www.microresist.de/wp-content/uploads/2022/08/NegativeResists_Flyer_Aug22.pdf", "datasheetVersionOrDate": "August 2022", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://microresist.de/en/produkt/mr-dwl-series/", "what": "microresist.de describes mr-DWL as 'chemically amplified negative tone... shares several advantageous properties with SU-8', and peer-reviewed literature groups 'epoxy-based photoresists SU-8 and mr-DWL' together; the basis for classifying mr-DWL 40 as epoxy." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "nr7-1500py", "name": "NR7-1500PY", "manufacturer": "Futurrex, Inc.", "productLine": null, "aliases": [ "NR7 1500PY", "NR7-1500 PY" ], "tone": "negative", "chemistry": null, "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not marketed for greyscale or 3D lithography; the datasheet targets binary lift-off patterning with a tunable undercut sidewall profile adjustable by exposure energy.", "status": "active", "successorSlug": null, "summary": "NR7-1500PY is Futurrex's negative-tone 365 nm lift-off resist, coating ~1.2–3.0 µm with an undercut sidewall tunable by exposure energy. It needs 390 mJ/cm² at 365 nm (1 µm film), develops in a basic aqueous solution and strips in RR4.", "thicknessRange": { "min_um": 1.2, "max_um": 3, "basis": "curve-span", "source": "curve-span — min/max of the published spin curve (Properties table, p.1 of the Futurrex NR7-1500PY Technical Information excerpt) over its stated 800-5000 rpm range; no separate achievable-range statement is made in prose. The datasheet publishes each point as a symmetric nm range rather than a single number; the value plotted is that range's midpoint, which is also the grade's nominal thickness (same treatment as NR71-3000P)." }, "spinCurves": [ { "label": "NR7-1500PY", "points": [ { "rpm": 800, "um": 3 }, { "rpm": 1000, "um": 2.7 }, { "rpm": 2000, "um": 1.9 }, { "rpm": 3000, "um": 1.5 }, { "rpm": 4000, "um": 1.3 }, { "rpm": 5000, "um": 1.2 } ], "source": "numeric table 'Film thickness after 150°C hotplate bake for 60 s. / Coating spin speed, 40 s spin (rpm): (nm)', p.1 of Futurrex NR7-1500PY Technical Information (the vendor's own product datasheet page, embedded as p.3 of the retrieved PDF). The datasheet publishes each point as an nm RANGE, not a single value (e.g. 800 rpm -> 2850-3150 nm); each point above is the exact midpoint of that stated range, converted nm->um. Raw ranges: 800rpm=2850-3150nm, 1000rpm=2565-2835nm, 2000rpm=1805-1995nm, 3000rpm=1425-1575nm, 4000rpm=1235-1365nm, 5000rpm=1140-1260nm. These six ranges are numerically identical, rpm-for-rpm, to the published spin table for the sibling Futurrex grade NR9-1500PY — plausibly one master curve reused across product lines formulated to the same nominal reference thickness. The 3000 rpm midpoint (1500 nm = 1.5 um) matches the '1500' in the product name NR7-1500PY, corroborating the midpoint reading." } ], "spinNotes": "The retrieved PDF is a University of Pennsylvania INRF lab SOP (Richard Chang / Ngoc Thanh Pham, Summer 2008) that embeds one page of Futurrex's own 'NEGATIVE RESIST NR7-1500PY' Technical Information sheet as a reference appendix (p.3 of the PDF = the vendor's own page '1'). Only that one vendor page was retrievable; the vendor's usual second 'Processing' page (with step-by-step spin/EBR/softbake/PEB/develop instructions, present in this library's NR9-1500PY and NR71-3000P entries) was not part of this document, so no Futurrex-stated dispense volume, acceleration, or edge-bead-removal procedure is recorded here. Separately, the UPenn SOP itself (pp.1-2 of the PDF, a lab procedure, NOT a Futurrex-published figure) reports its own campus recipe: HMDS primer spun at 3000 rpm/30 s (425 rpm/s accel) then baked 90°C/3 min hotplate before coating; NR7-1500PY spun at 800 rpm/40 s, softbake 150°C/60 s (hotplate) — this line matches the vendor Properties-table bake condition exactly — exposure '2 mins (MA6)' aligner, post-exposure bake 100°C/2 min hotplate, develop with MF-319 for 10 s, yielding 1.5 µm; hard-bake 90°C oven/20 min is called optional. Those lab-specific numbers (PEB temp/time, develop time, developer choice, exposure dose-as-time-on-a-specific-tool) are quoted here as one university lab's own process on one specific aligner (Karl Suss MA6), not as Futurrex recommendations — the two should not be conflated.", "adhesion": { "hmds": null, "notes": "Not addressed on the retrieved vendor page (the vendor's Substrate Preparation guidance, if any, would be on the missing Processing page). The University of Pennsylvania INRF SOP embedding this document applies an HMDS primer (3000 rpm/30 s spin, 90°C/3 min hotplate bake) before coating NR7-1500PY as its own lab practice — a secondary source, not confirmed as Futurrex's own recommendation for this SKU." }, "rehydration": null, "softbake": { "temp_c": 150, "time_s": 60, "method": "hotplate", "notes": "Sourced from the Properties-table heading itself ('Film thickness after 150°C hotplate bake for 60 s.'), which functions as the bake condition Futurrex measured its spin-curve thickness against — the same pattern used on this library's sibling NR9-1500PY and NR71-3000P sheets, where the identical phrase is explicitly corroborated by a numbered Processing step. That corroborating Processing step is not present in this retrieved document, so this figure rests on the Properties-table heading alone. Independently, the University of Pennsylvania SOP embedding this document reports the identical 150°C/60 s softbake as its own lab practice for NR7-1500PY, which corroborates (but does not itself constitute) the vendor figure.", "source": "Properties table heading, p.1 of Futurrex NR7-1500PY Technical Information (embedded as p.3 of the retrieved PDF)" }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 390, "source": "Properties, p.1 of Futurrex NR7-1500PY Technical Information (embedded as p.3 of the retrieved PDF)" } ], "basisCopy": "390 mJ/cm² at 365 nm is a sensitivity normalized to a 1 µm film, quoted alongside the tools Futurrex expects — steppers, scanning projection aligners, proximity and contact printers — with no dose for any other coat thickness." }, "peb": null, "floodExposure": null, "develop": { "developer": null, "dilution": null, "time_s": null, "method": null, "rinse": null, "source": null }, "hardbake": null, "descum": null, "applications": [ "lift-off", "etch-mask" ], "etchResistance": "\"Superior selectivity in RIE process\" (Description, p.1 of the Futurrex NR7-1500PY Technical Information excerpt).", "liftoffSuitable": true, "platingSuitable": null, "stripper": "Resist Remover RR4 (Description, p.1: 'easy resist removal in Resist Remover RR4') — note this differs from the RR5 remover specified for Futurrex's NR9-1500PY and the RR41 remover specified for NR71-3000P elsewhere in this library; the three SKUs' strip chemistries should not be conflated.", "storage": "\"Guaranteed shelf life at 25°C storage (years) 3\" (Properties, p.1); \"shelf life exceeding 3 years at room temperature storage\" (Description, p.1) of the Futurrex NR7-1500PY Technical Information excerpt. Full storage-condition guidance (temperature range, light/heat/ignition precautions), if published, would be on the missing Processing page.", "notes": "NR7-1500PY is Futurrex's negative-tone, 365 nm lift-off resist, formulated in cyclohexanone (24-28% solids) and developed in an unspecified 'basic water solution'; the datasheet's headline advantage is 'easy adjustment of the degree of resist undercut as a function of exposure energy', which is what makes its negative-sloping sidewall profile useful for lift-off. Only one page of Futurrex's own two-page Technical Information sheet was retrievable — embedded as a reference appendix inside a 2008 University of Pennsylvania INRF cleanroom SOP rather than fetched as a standalone vendor PDF — so the vendor's own Processing-page guidance (PEB temperature/time, develop time, edge-bead removal, storage conditions) is not available here and no value is quoted for those steps; the SOP's own campus recipe for them is quoted in the coating and development notes as one lab's process on one aligner (Karl Suss MA6), not as a Futurrex-published figure. The spin-thickness table that IS available reproduces exactly the same six rpm/nm-range data points published for the sibling grade NR9-1500PY elsewhere in this library. The 390 mJ/cm² sensitivity at 365 nm is normalized to a 1 µm-thick film, and resist removal uses Resist Remover RR4 — a third distinct remover code, alongside RR5 (NR9-1500PY) and RR41 (NR71-3000P), that should not be conflated across the three Futurrex SKUs in this library.", "developerFamily": null, "references": [ { "type": "paper", "accessedDate": "2026-07-16", "title": "Plasmonic Nanopore Sensing to Probe the DNA Loading Status of Adeno-Associated Viruses", "authors": "Renkes et al.", "journal": "Chemosensors", "year": 2025, "doi": "10.3390/chemosensors13120418", "summary": "Coats wafers with NR7-1500PY, patterns them on a backside mask aligner, develops in Futurrex RD-6 with an oxygen-plasma descum, then lifts off a 5 nm Cr / 100 nm Au stack to form the plasmonic apertures of a nanopore sensor.", "note": "Grade-exact lift-off usage -- the application this resist is sold for -- paired with the Futurrex RD-6 developer.", "url": "https://doi.org/10.3390/chemosensors13120418" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Proteomics-Empowered Microfluidic-SERS Immunoassay for Identifying and Detecting Biomarkers of Micropapillary Lung Adenocarcinoma", "authors": "Zhang et al.", "journal": "Advanced Science", "year": 2025, "doi": "10.1002/advs.202501336", "summary": "Spins NR7-1500PY on a glass wafer at 1200 rpm for 10 s then 3000 rpm for 40 s, bakes at 150 C for 1 min, exposes on a SUSS MicroTec aligner, post-bakes at 120 C for 2 min, develops in TMAH for 7 s, and lifts off Cr/Au overnight to form ring electrodes.", "note": "Grade-exact, and a rare fully-stated NR7-1500PY recipe: spin, bake, post-exposure bake, develop and lift-off conditions are all published.", "url": "https://doi.org/10.1002/advs.202501336" } ], "provenance": { "datasheetUrl": "https://www.seas.upenn.edu/~nanosop/documents/NR7-1500PY.pdf", "datasheetVersionOrDate": null, "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.seas.upenn.edu/~nanosop/documents/NR7-1500PY.pdf", "what": "Pages 1-2 of this SAME PDF (as distinct from page 3, the appended vendor sheet used as datasheetUrl basis): a University of Pennsylvania INRF ('Negative Resist NR7-1500PY photolithography', Richard Chang / Ngoc Thanh Pham, Summer 2008) cleanroom lab SOP. Used only for practical/lab-specific process numbers not present on the retrieved vendor page — HMDS pretreatment step, PEB temp/time, develop time and developer product, hard-bake — each explicitly flagged in the relevant field's notes as one lab's own recipe, not a Futurrex-published recommendation. Not used for any headline vendor spec (spin table and 365 nm dose both come from the appended Futurrex Technical Information page itself)." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "nr71-3000p", "name": "NR71-3000P", "manufacturer": "Futurrex, Inc.", "productLine": null, "aliases": [ "NR71 3000P", "NR71-3000 P" ], "tone": "negative", "chemistry": null, "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not marketed for greyscale or 3D lithography; the datasheet describes a 'straight resist sidewall profile' for binary patterning, high thermal stability (up to 180°C) and RIE selectivity.", "status": "active", "successorSlug": null, "summary": "NR71-3000P is Futurrex's high-photospeed negative-tone 365 nm resist with a straight (non-undercut) sidewall and thermal stability to 180°C, coating ~2.2–6.0 µm and needing no HMDS adhesion promoter.", "thicknessRange": { "min_um": 2.233, "max_um": 6, "basis": "curve-span", "source": "curve-span — min/max of the published spin curve (Properties table, p.1) over its stated 800-5000 rpm range; no separate achievable-range statement is made in prose." }, "spinCurves": [ { "label": "NR71-3000P", "points": [ { "rpm": 800, "um": 6 }, { "rpm": 3000, "um": 3 }, { "rpm": 4000, "um": 2.59 }, { "rpm": 5000, "um": 2.233 } ], "source": "numeric table 'Film thickness after 150°C hotplate bake for 60 s (nm) / Coating spin speed, 40 s spin (rpm)', p.1 of Futurrex NR71-3000P Technical Information. The datasheet publishes each point as an nm RANGE, not a single value: published as 5700-6300 nm at 800 rpm, 2850-3150 nm at 3000 rpm, 2460-2720 nm at 4000 rpm, 2140-2326 nm at 5000 rpm; midpoint used for each (every range is symmetric, approx. nominal +/-4-5%), converted nm->um. The 3000 rpm midpoint (3000 nm = 3.0 um exactly) matches the '3000' in the product name NR71-3000P, corroborating the midpoint reading. Only 4 spin speeds are published (no 1000 or 2000 rpm rows, unlike the NR9-1500PY datasheet)." } ], "spinNotes": "Spin coating is at a selected speed for 40 s (Processing step 1). Edge Bead Remover EBR2 is applied to the bottom and edge of the coated wafer for 10 s, stopping 5 s before spin cycle completion (Processing step 2). Bake schedules differ by substrate thermal conductivity — see softbake/peb notes.", "adhesion": { "hmds": false, "notes": "Datasheet lists 'elimination of a need for application of adhesion promoters such as HMDS' as one of NR71-3000P's advantages over other resists (Description, p.1)." }, "rehydration": null, "softbake": { "temp_c": 150, "time_s": 60, "method": "hotplate", "notes": "150°C/60 s applies to good thermal conductors (Si, GaAs, InP). For a 1 mm-thick glass substrate the datasheet instead specifies 165°C for 240 s.", "source": "Processing step 3, p.2" }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 21, "source": "Properties, p.1" } ], "basisCopy": "The 21 mJ/cm² i-line figure is a sensitivity normalized to a 1 µm film, not a process dose for the thick coats this resist is bought for; no dose is published at any other thickness." }, "peb": { "temp_c": 100, "time_s": 60, "notes": "100°C/60 s applies to good thermal conductors (Si, GaAs, InP). For a 1 mm-thick glass substrate the datasheet instead specifies 110°C for 240 s.", "source": "Processing step 5, p.2" }, "floodExposure": null, "develop": { "developer": "Resist Developer RD6", "dilution": null, "time_s": 30, "method": null, "rinse": "Deionized water rinse until water resistivity reaches prescribed limit (Processing step 7).", "source": "Processing steps 6-7, p.2" }, "hardbake": null, "descum": null, "applications": [ "etch-mask" ], "etchResistance": "\"Superior selectivity in RIE process\" (Description, p.1).", "liftoffSuitable": null, "platingSuitable": null, "stripper": "Resist Remover RR41 (Processing step 9, p.2) — note this differs from the RR5 remover specified for Futurrex's NR9-1500PY.", "storage": "\"Guaranteed shelf life at 25°C storage (years) 3\" (Properties, p.1); \"shelf life exceeding 3 years at room temperature storage\" (Description, p.1).", "notes": "NR71-3000P is Futurrex's high-photospeed negative-tone 365 nm resist, formulated in gamma-butyrolactone and rated for 180°C thermal stability — notably higher than the 100°C rating on Futurrex's NR9 series — and the datasheet lists elimination of an HMDS adhesion-promoter step as a specific advantage. Unlike NR9-1500PY, which is explicitly marketed for lift-off with a tunable undercut, this datasheet describes NR71-3000P's developed sidewall as 'straight' and makes no lift-off claim. The datasheet gives two full bake schedules for both softbake and post-exposure bake — 150°C/60 s (softbake) and 100°C/60 s (PEB) for good thermal conductors (Si, GaAs, InP), versus 165°C/240 s and 110°C/240 s respectively for 1 mm-thick glass — a substrate-dependent difference easy to lose when copying a recipe across substrates. The 21 mJ/cm² sensitivity at 365 nm is explicitly normalized to a 1 µm-thick film, and resist removal uses Resist Remover RR41 (not the RR5 used for NR9-1500PY — the two SKUs' strip chemistries should not be conflated).", "developerFamily": "tmah", "references": [ { "type": "paper", "accessedDate": "2026-07-16", "title": "Robust lasing modes in coupled colloidal quantum dot microdisk pairs using a non-Hermitian exceptional point", "authors": "Lafalce et al.", "journal": "Nature Communications", "year": 2019, "doi": "10.1038/s41467-019-08432-6", "summary": "Dilutes NR71-3000P with ethyl lactate to one third of the as-supplied concentration and spins it at 3000 rpm for 1 min onto a CYTOP/silicon substrate to define coupled quantum-dot microdisk resonators.", "note": "Grade-exact, but note the resist is deliberately thinned: the resulting film sits far below the as-supplied coating range this datasheet publishes. The dilution is the paper's own, not a manufacturer process.", "url": "https://doi.org/10.1038/s41467-019-08432-6" } ], "provenance": { "datasheetUrl": "https://apps.mnc.umn.edu/pub/photoresists/nr71_3000p_pds.pdf", "datasheetVersionOrDate": null, "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://nrf.aux.eng.ufl.edu/_files/msds/2/Resist%20Developer%20RD6.pdf", "what": "Futurrex's material safety data sheet for Resist Developer RD6 (dated 2009, hosted by the University of Florida Nanoscale Research Facility): gives the composition as 97-98 % water and 2-3 % tetramethylammonium hydroxide. The resist datasheet names RD6 but never states its chemistry." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "nr9-1500py", "name": "NR9-1500PY", "manufacturer": "Futurrex, Inc.", "productLine": null, "aliases": [ "NR9 1500PY", "NR9-1500 PY" ], "tone": "negative", "chemistry": null, "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not marketed for greyscale or 3D lithography; the datasheet targets binary lift-off patterning with a tunable undercut sidewall.", "status": "active", "successorSlug": null, "summary": "NR9-1500PY is Futurrex's negative-tone 365 nm lift-off resist, coating ~1.2–3.0 µm with an undercut sidewall tunable by exposure dose. It needs 190 mJ/cm² at 365 nm (1 µm film), develops in aqueous RD6 and strips in RR5.", "thicknessRange": { "min_um": 1.2, "max_um": 3, "basis": "curve-span", "source": "curve-span — min/max of the published spin curve (Properties table, p.1) over its stated 800-5000 rpm range; no separate achievable-range statement is made in prose. The datasheet publishes each point as a symmetric nm range rather than a single number; the value plotted is that range's midpoint, which is also the grade's nominal thickness (same treatment as NR71-3000P)." }, "spinCurves": [ { "label": "NR9-1500PY", "points": [ { "rpm": 800, "um": 3 }, { "rpm": 1000, "um": 2.7 }, { "rpm": 2000, "um": 1.9 }, { "rpm": 3000, "um": 1.5 }, { "rpm": 4000, "um": 1.3 }, { "rpm": 5000, "um": 1.2 } ], "source": "numeric table 'Film thickness after 150°C hotplate bake for 60 s. / Coating spin speed, 40 s spin (rpm): (nm)', p.1 of Futurrex NR9-1500PY Technical Information. The datasheet publishes each point as an nm RANGE, not a single value (e.g. 800 rpm -> 2850-3150 nm); each point above is the exact midpoint of that stated range (every range is symmetric, approx. nominal +/-5%), converted nm->um. Raw ranges: 800rpm=2850-3150nm, 1000rpm=2565-2835nm, 2000rpm=1805-1995nm, 3000rpm=1425-1575nm, 4000rpm=1235-1365nm, 5000rpm=1140-1260nm. The 3000 rpm midpoint (1500 nm = 1.5 um) matches the '1500' in the product name NR9-1500PY, corroborating the midpoint reading." } ], "spinNotes": "Spin coating is at a selected speed for 40 s (Processing step 1). Edge Bead Remover EBR2 is dispensed simultaneously onto top and bottom surfaces through nozzles 0.5-1.0 cm from the substrate edge, starting as soon as edge bead forms (3-5 s after resist dispense ends) and stopping 5 s before spin cycle completion (Processing step 2). Bake times throughout this datasheet assume a good thermal conductor substrate (Si, GaAs); the datasheet instructs multiplying bake times by 3.5 for poor thermal conductors such as glass.", "adhesion": { "hmds": null, "notes": "Not addressed in this datasheet." }, "rehydration": null, "softbake": { "temp_c": 150, "time_s": 60, "method": "hotplate", "notes": "Applies to good thermal conductors (Si, GaAs, etc.); bake times must be multiplied by 3.5 for poor thermal conductors such as glass (no explicit alternate schedule given for this SKU, unlike NR71-3000P's dual schedule).", "source": "Processing step 3, p.2; corroborated by Properties table heading, p.1" }, "exposureDose": { "doses": [ { "wavelength_nm": 365, "value_mJcm2": 190, "source": "Properties, p.1" } ], "basisCopy": "190 mJ/cm² at 365 nm is the only exposure figure Futurrex prints for this resist, and it is normalized to a 1 µm film — there is no h-line number and nothing for a thicker coat." }, "peb": { "temp_c": 100, "time_s": 60, "notes": "Applies to good thermal conductors (Si, GaAs, etc.); no alternate schedule for glass is given for this SKU.", "source": "Processing step 5, p.2" }, "floodExposure": null, "develop": { "developer": "Resist Developer RD6", "dilution": null, "time_s": 12, "method": null, "rinse": "Deionized water rinse until water resistivity reaches prescribed limit (Processing step 7).", "source": "Processing steps 6-7, p.2" }, "hardbake": null, "descum": null, "applications": [ "lift-off", "etch-mask" ], "etchResistance": "\"Superior selectivity in RIE process\" (Description, p.1).", "liftoffSuitable": true, "platingSuitable": null, "stripper": "Resist Remover RR5 at room temperature (Processing step 9, p.2).", "storage": "\"Guaranteed shelf life at 25°C storage (years) 3\" (Properties, p.1); \"shelf life exceeding 3 years at room temperature storage\" (Description, p.1).", "notes": "NR9-1500PY is Futurrex's negative-tone, 365 nm lift-off resist, formulated in cyclohexanone and developed in the basic aqueous RD6 developer; degree of undercut is tuned by exposure dose (per the datasheet, 'easy adjustment of the degree of resist undercut as a function of exposure energy') as well as by extending development time via RD6/water dilution. The product code encodes its reference film thickness: '1500' corresponds to the 3000 rpm/40 s coating point (1425-1575 nm, midpoint 1.5 µm) in the published spin table. Bake times given here (150°C softbake, 100°C PEB, both 60 s) assume a substrate that conducts heat well (silicon, GaAs); the datasheet explicitly instructs multiplying bake times by 3.5 on poor thermal conductors such as glass — a detail easy to miss when porting a Si recipe to a transparent substrate. Sensitivity is published as 190 mJ/cm² at 365 nm normalized to a 1 µm-thick film rather than as an absolute dose for whatever process thickness is actually chosen, and no h-line (405 nm) dose is given.", "developerFamily": "tmah", "references": [ { "type": "paper", "title": "Micromachining on and of Transparent Polymers for Patterning Electrodes and Growing Electrically Active Cells for Biosensor Applications", "authors": "Karnati et al.", "journal": "Micromachines", "year": 2017, "doi": "10.3390/mi8080250", "url": "https://doi.org/10.3390/mi8080250", "accessedDate": "2026-07-15", "summary": "NR9 lift-off gold MEAs on flexible PEN for biosensors", "note": "Uses NR9-3000PY (a thicker ~6 um sibling grade in Futurrex's NR9 negative-resist series), not the 1500PY grade of this recipe; cited as family-level evidence of NR9 Ti/Au metal lift-off on flexible PEN." } ], "troubleshooting": [ { "q": "How do I control the lift-off undercut with NR9-1500PY?", "a": "NR9-1500PY is a negative-tone resist whose degree of undercut is tuned by exposure energy — the datasheet's stated advantage is 'easy adjustment of the degree of resist undercut as a function of exposure energy.' The undercut can also be opened up by extending development. Process is soft bake 150°C/60 s, expose at 365 nm, PEB 100°C/60 s, develop in RD6, then strip in RR5.", "source": "Futurrex NR9-1500PY Technical Information — Description, p.1, and Processing steps 3–9, p.2" }, { "q": "What is the develop time for NR9-1500PY, and how do I extend it?", "a": "The standard example is 12 s in Resist Developer RD6 for a 1.5 µm film, including overdevelopment, by spray or immersion, followed by a DI-water rinse to the prescribed resistivity. To slow the develop down to a 60 s process, the datasheet specifies diluting RD6 with water 3:1 — a distinct, slower develop rather than simply running the neat developer longer.", "source": "Futurrex NR9-1500PY Technical Information — Processing steps 6–7, p.2" }, { "q": "What exposure dose does NR9-1500PY need at 365 nm?", "a": "Sensitivity is published as 190 mJ/cm² at 365 nm, explicitly normalized to a 1 µm-thick film — not an absolute dose for an arbitrary process thickness, and the datasheet gives no scaling formula, so treat it as a starting point and calibrate for your film. Exposure must be at 365 nm; no h-line (405 nm) dose is published.", "source": "Futurrex NR9-1500PY Technical Information — Properties, p.1" }, { "q": "Do I change the bake for NR9-1500PY on glass or other poor thermal conductors?", "a": "Yes. The 150°C/60 s soft bake and 100°C/60 s PEB assume a good thermal conductor such as silicon or GaAs; on a poor thermal conductor such as glass the datasheet instructs multiplying the bake times by 3.5 — easy to miss when porting a silicon recipe to a transparent substrate.", "source": "Futurrex NR9-1500PY Technical Information — Processing steps 3 & 5, p.2" } ], "provenance": { "datasheetUrl": "https://apps.mnc.umn.edu/pub/pds/nr9-1500py.pdf", "datasheetVersionOrDate": null, "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://nrf.aux.eng.ufl.edu/_files/msds/2/Resist%20Developer%20RD6.pdf", "what": "Futurrex's material safety data sheet for Resist Developer RD6 (dated 2009, hosted by the University of Florida Nanoscale Research Facility): gives the composition as 97-98 % water and 2-3 % tetramethylammonium hydroxide. The resist datasheet names RD6 but never states its chemistry." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "pmgi-sf-6", "name": "PMGI SF6", "manufacturer": "MicroChem", "productLine": "PMGI SF series", "aliases": [ "SF6", "MicroChem SF6", "LOR/PMGI SF6" ], "tone": null, "chemistry": "ancillary", "photoimageable": false, "grayscaleSuitable": false, "grayscaleNote": "Not applicable / not addressed. PMGI SF6 is a non-photoimageable ancillary underlayer used for lift-off undercut control - it is never itself exposed or patterned by light, so grayscale/3D-relief processing does not apply to it.", "status": "active", "successorSlug": null, "summary": "PMGI SF6 is a non-photoimageable, polydimethylglutarimide-based ancillary resist from MicroChem's PMGI SF series, used as the undercut/sacrificial layer beneath a conventional imaging resist in bi-layer lift-off processing. It is never exposed; its dissolution rate (and the resulting undercut geometry) is instead controlled by soft-bake temperature.", "thicknessRange": { "min_um": 0.26, "max_um": 0.485, "basis": "curve-span", "source": "curve-span - min/max of the SF6 trace read from the \"Spin Speed vs Thickness - Intermediate Films\" chart, p.5 of the Technical Data section, over its plotted 1000-4000 rpm range." }, "spinCurves": [ { "label": "PMGI SF6", "points": [ { "rpm": 1000, "um": 0.485 }, { "rpm": 1500, "um": 0.39 }, { "rpm": 2000, "um": 0.335 }, { "rpm": 2500, "um": 0.3 }, { "rpm": 3000, "um": 0.28 }, { "rpm": 3500, "um": 0.265 }, { "rpm": 4000, "um": 0.26 } ], "source": "read from figure (\"Spin Speed vs Thickness - Intermediate Films\"), p.5 of the \"LOR and PMGI Resists\" Technical Data section. Five traces share this chart (legend: LOR 7B - open square; LOR 5A - open circle; LOR 5B - x; \"LOR 3A, LOR 3B\" combined - open diamond; SF6 - open triangle). The SF6 trace was identified unambiguously by its own dedicated triangle-marker legend entry, distinct from the explicitly-combined 'LOR 3A, LOR 3B' diamond series (which was NOT used for this recipe per the no-combined-trace rule) and from the other individually-named LOR grades. SF6 is the bottommost (thinnest) of the five traces at every plotted speed and is also the only one of the five sampled at 500 rpm intervals (1000-4000 rpm, 7 points) rather than 1000 rpm intervals (4 points) used for the other four traces on the same chart.", "figureRead": true } ], "spinNotes": "General coating guidance (p.2, applies to the LOR/PMGI line as a whole, not SF6-specific numbers): spin speeds between 2,500 and 4,500 rpm give maximum coating uniformity; higher speeds for smaller substrates, lower for larger or topographically irregular substrates. Recommended Coating Parameters box (p.5, generic to the line): dispense volume 5 ml (150 mm Si wafer), dispense mode dynamic 3-5 s, dispense spin speed 300-500 rpm, acceleration 10,000 rpm/second, terminal spin speed 3,000 rpm, spin time 45 seconds, edge-bead remover MicroChem EBR PG (acetone and conventional-resist edge-bead removers are explicitly NOT recommended with LOR/PMGI). None of this coating-parameter box is stated as SF6-specific - it is a line-wide recommendation.", "adhesion": { "hmds": false, "notes": "\"Primers such as HMDS (hexamethyldisilazane) are typically NOT required to promote adhesion with PMGI/LOR products when used as recommended.\" (Substrate preparation, p.2). Recommended substrate prep instead: solvent clean or dilute-acid rinse, followed by DI water rinse, then a dehydration bake at 200°C for 5 minutes on a contact hotplate or 30 minutes in a convection oven. LOR/PMGI is stated to have superior adhesion to Si, NiFe, GaAs, InP and other III-V materials (p.1 Benefits list)." }, "rehydration": null, "softbake": { "temp_c": null, "tempRange_c": { "min": 150, "max": 200 }, "time_s": null, "method": "hotplate", "notes": "Recommended bake range is 150-200°C; some PMGI grades take up to 250°C. Pre-bake temperature has the single largest influence on undercut rate — more than pre-bake time, the imaging resist's exposure dose, developer choice, develop mode or develop time. Hot plates are preferred; convection ovens are also compatible. No single temperature or time is given for SF 6 — the recommended approach is a matrix varying pre-bake temperature and time to tune undercut for your process. The optical constants published for the SF family were measured on films soft-baked at 180°C for 3 min, which is a measurement condition rather than a process recommendation.", "source": "Soft-bake/Prebake Process section, p.3 (\"The recommended bake temperature range is 150°C - 200°C...\"); Table 1 footnote, p.5 (\"Products were soft-baked at 180°C for 3 min\")" }, "exposureDose": null, "peb": { "temp_c": null, "time_s": null, "notes": "\"LOR/PMGI does not require post-exposure baking. Refer to patterning resist manufacturer process recommendations to determine whether a PEB step is required.\" - stated generically for the whole LOR/PMGI line, including the PMGI SF series that SF6 belongs to; consistent with PMGI/LOR never itself being exposed in the standard bi-layer lift-off flow.", "source": "Post - Exposure (PEB) Process section, p.4" }, "floodExposure": null, "develop": { "developer": "Metal-ion-free (MIF) developers, specifically 0.26N and 0.24N MIF per the Product Selection Guide's \"SF\" column (SF6's category); the SF category is NOT starred for metal-ion-bearing (MIB) compatibility in that same guide (only LOR B is). General text elsewhere states the line is \"optimized for use with various metal ion free and metal ion containing developers,\" a broader claim than the SF-specific selection-guide row.", "dilution": "0.26N MIF (2.38% TMAH) and 0.24N MIF (2.2% TMAH w/surfactant) are both marked compatible for the \"SF\" category in the Product Selection Guide (p.6); no single dilution is singled out as SF6's own specific recommendation.", "time_s": null, "method": null, "rinse": null, "source": "Development Process section, p.4; Product Selection Guide (\"Developer Compatibility\" rows, \"SF\" column), p.6" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "Not addressed. LOR/PMGI is coated and soft-baked, then covered by an overlying imaging resist which is exposed and developed (developing both layers together); the process then proceeds directly to metal/dielectric deposition (Deposition Process, p.4) with no separate hardbake step described for the LOR/PMGI layer itself.", "source": null }, "descum": null, "applications": [ "lift-off", "mems-structural" ], "etchResistance": null, "liftoffSuitable": true, "platingSuitable": null, "stripper": "MicroChem Remover PG. \"Use MicroChem's Remover PG to remove the bi-layer resist stack. Removal rate of LOR/PMGI is dependent upon soft-bake temperature of the LOR/PMGI product and remover bath temperature. As a baseline process, use Remover PG in two tanks: at 60°C for 30 minutes in the first tank and rinse at 60°C in the second tank. Ultrasonic action will improve the resist removal efficiency.\" (Lift-Off Process, p.4). A separate category-level chart (Figure 9, p.4, labeled \"SF Series\" - not SF6 individually) shows removal rate in Remover PG rising with bath temperature (40°C bath removes faster than 25°C) and falling as the PMGI's own soft-bake temperature increases (150 -> 180 -> 200°C); exact rates were not extracted here since the chart is not SF6-specific and its bar-scale precision is limited.", "storage": "\"Store upright in original sealed containers in a dry area between 4 and 27°C (40-80°F). Keep away from sources of ignition, light, heat, oxidants, acids, and reducers. Do not use after the expiration date (1 year from date of manufacture).\" (LOR/PMGI Storage, p.7)", "notes": "PMGI SF6 belongs to MicroChem's PMGI SF series (SF2/SF3/SF5/SF6/SF9/SF11, plus a slower-dissolving 'SF Slow' variant), a polydimethylglutarimide-based ancillary layer that is never itself exposed for patterning: in the standard bi-layer lift-off flow it is coated and soft-baked first, then a conventional imaging resist is coated, exposed and developed on top, and the same develop step dissolves an undercut into the PMGI beneath the imaging-resist pattern. Its dissolution rate - and therefore the achievable undercut geometry - is controlled primarily by SOFT-BAKE TEMPERATURE rather than by exposure or develop time; this datasheet's own quantified bake-temperature-vs-undercut-rate curves (Figures 5a/5b) are published only for LOR 10B, not for SF6, so no grade-specific undercut-rate number is reported here - a matrix design varying pre-bake temperature and time is explicitly recommended instead for fine-tuning any given grade. HMDS priming is explicitly NOT required for PMGI/LOR adhesion, and the document notes the overlying imaging resist can be applied directly over PMGI without barrier layers or a plasma descum step. As a PMGI-branded (not LOR-branded) product, SF6 is also compatible with an optional 'Cap-On' process in which the PMGI layer is separately deep-UV (240-290 nm) flood exposed to obtain straighter sidewall profiles - the document ties this option to PMGI generically rather than to SF6 specifically, so it is noted here as available but not confirmed SF6-specific. Stripping uses MicroChem Remover PG (baseline two-tank 60°C/30 min process); actual removal rate depends on the layer's own soft-bake temperature and the remover bath temperature.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Robust shadow-mask evaporation via lithographically controlled undercut", "authors": "Cord et al.", "journal": "Journal of Vacuum Science & Technology B", "year": 2006, "doi": "10.1116/1.2375090", "url": "https://doi.org/10.1116/1.2375090", "accessedDate": "2026-07-15", "summary": "The Dolan-bridge PMMA/PMGI undercut process for evaporated Josephson junctions; PMGI develops in aqueous base, enabling a controlled undercut independent of the PMMA imaging layer.", "note": "The paper uses the PMGI (SF-series) underlayer generically; cited here for PMGI SF6." } ], "troubleshooting": [ { "q": "Is PMGI SF6 exposed like a normal photoresist?", "a": "No. PMGI SF6 is a non-photoimageable, polydimethylglutarimide-based underlayer — it is never exposed for patterning. In the standard bilayer lift-off flow it is coated and soft-baked first; a conventional imaging resist is then coated, exposed and developed on top, and the same develop step dissolves an undercut into the PMGI beneath the imaging-resist pattern. The datasheet notes LOR/PMGI does not require post-exposure baking.", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Post-Exposure (PEB) Process section, p.4" }, { "q": "How do I control the undercut of PMGI SF6?", "a": "Its dissolution rate — and therefore the achievable undercut — is controlled primarily by soft-bake temperature, stated to have the single greatest influence (more than pre-bake time, the imaging resist's dose, developer choice, develop mode or develop time). Recommended bake range is 150–200 °C (some PMGI grades to 250 °C); a matrix varying pre-bake temperature and time is recommended for tuning. The datasheet's quantified undercut-rate curves are published only for LOR 10B, not SF6, so characterize SF6's rate on-tool.", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Soft-bake/Prebake Process, p.3" }, { "q": "Which developer does PMGI SF6 use?", "a": "The Product Selection Guide marks the SF category compatible with metal-ion-free (MIF) developers — 0.26N (2.38% TMAH) and 0.24N (2.2% TMAH with surfactant); the SF category is not starred for metal-ion-bearing compatibility (only LOR B is). No SF6-specific develop time, method or rinse is published — develop time depends on the combined thickness of the PMGI and overlying imaging-resist layers and must be set experimentally.", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Development Process p.4 + Product Selection Guide p.6" }, { "q": "Does PMGI SF6 need HMDS or a descum/barrier layer under the imaging resist?", "a": "No. HMDS priming is explicitly not required for PMGI/LOR adhesion, and the overlying imaging resist can be applied directly over the PMGI without barrier layers or a plasma descum step (no intermixing occurs). Recommended substrate prep is a solvent clean or dilute-acid rinse, a DI water rinse, then a dehydration bake at 200 °C (5 min on a contact hotplate or 30 min in a convection oven).", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A, Substrate preparation, p.2" }, { "q": "Can PMGI SF6 sidewalls be made straighter?", "a": "Yes — as a PMGI-branded product, SF6 is compatible with an optional 'Cap-On' process in which the PMGI layer is separately deep-UV (240–290 nm) flood exposed to obtain straighter sidewall profiles. The datasheet ties this option to PMGI generically rather than to SF6 specifically, so treat it as available but characterize on-tool.", "source": "MicroChem 'LOR and PMGI Resists' datasheet Rev. A (PMGI 'Cap-On' deep-UV flood option)" } ], "provenance": { "datasheetUrl": "https://apps.mnc.umn.edu/pub/pds/lor.pdf", "datasheetVersionOrDate": "Rev. A (printed bottom-right of p.7)", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "humanVerified": false }, { "slug": "s1813", "name": "S1813", "manufacturer": "Kayaku Advanced Materials (Microposit brand; datasheet originally published by Rohm and Haas Electronic Materials / later Dow Electronic Materials)", "productLine": "MICROPOSIT S1800 G2 series", "aliases": [ "Microposit S1813", "S1813 G2", "Microposit S1813 G2 Photoresist" ], "tone": "positive", "chemistry": "dnq-novolak", "grayscaleSuitable": false, "grayscaleNote": "Not addressed in this datasheet; it is presented as a standard single-tone (binary) positive photoresist for IC masking, with no grayscale/3D process information given.", "status": "active", "successorSlug": null, "summary": "MICROPOSIT S1813 is the mid-film, best-documented grade of the MICROPOSIT S1800 G2 positive photoresist series, coating roughly 1.03–1.9 µm — the default general-purpose g-line resist, and the one grade this datasheet fully characterizes.", "thicknessRange": { "min_um": 1.03, "max_um": 1.9, "basis": "curve-span", "source": "curve-span: the datasheet publishes no prose achievable-range statement for S1813 G2. 12,300 Å (Table 1, p.1; also Tables 5/7/8) and 13,675 Å (Table 3, p.2) are two unrelated single reference coat thicknesses used as the fixed film for other test figures (masking linearity SEMs, the dispersion-curve measurement) — neither is a stated achievable range, and neither is paired with a spin speed. The range here is the span of the S1813 G2 trace (triangle markers) in Figure 2, 'MICROPOSIT S1800 G2 Photoresist Undyed Series Spin Speed Curves', p.2: 1.90 µm at 2,000 rpm to 1.03 µm at 7,000 rpm — the trace's actual plotted x-range, which runs 2,000-7,000 rpm only, not the chart's wider 1,000-8,000 rpm axis range." }, "spinCurves": [ { "label": "S1813 G2", "points": [ { "rpm": 2000, "um": 1.9 }, { "rpm": 3000, "um": 1.55 }, { "rpm": 4000, "um": 1.33 }, { "rpm": 5000, "um": 1.21 }, { "rpm": 6000, "um": 1.11 }, { "rpm": 7000, "um": 1.03 } ], "source": "read from 'MICROPOSIT S1800 G2 Photoresist Undyed Series Spin Speed Curves' (Figure 2), p.2 of MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041, Rev. 0, October 2006). The S1813 G2 trace is the triangle-marker series, 2nd of 4 stacked series (diamond/S1818 above, square/S1811 and x/S1805 below), matching the legend order. Its plotted markers run 2,000-7,000 rpm only (6 points), not the chart's wider 1,000-8,000 rpm axis range. No rpm-paired numeric anchor exists in the document — the two printed reference thicknesses (12,300 Å and 13,675 Å) are coat conditions used for other test figures (masking linearity, dispersion curve), not points on this spin curve.", "figureRead": true } ], "spinNotes": "The datasheet publishes a spin-speed FIGURE (Figure 2, p.2, \"MICROPOSIT S1800 G2 Photoresist Undyed Series Spin Speed Curves\") plotting film thickness (0-40,000 Å) vs. spin speed (1,000-8,000 rpm axis range) for four grades (S1805, S1811, S1813, S1818 G2) on one chart, coated on an SVG 81 with a 115°C/60s softbake. The S1813 G2 trace (triangle marker, second-highest of the four, which do not cross across the plotted range) spans 2,000-7,000 rpm — its own plotted extent, narrower than the chart's 1,000-8,000 rpm axis range. The thickness range quoted for this grade is the span of that curve, 1.03-1.90 µm; the two reference coat thicknesses (12,300 Å / 13,675 Å) are single fixed-film conditions for other test figures (masking linearity, exposure latitude, dispersion curve), not a statement of what the resist can coat. The datasheet does state maximum coating uniformity is typically attained between 3,500-5,500 rpm. The two reference thicknesses still recur across the process-condition tables: 12,300 Å in Tables 1, 4, 5, 7, 8, and 13,675 Å in Table 3.", "adhesion": { "hmds": true, "notes": "Works well with hexamethyldisilazane (HMDS)-based MICROPOSIT Primers. Concentrated MICROPOSIT Primer is recommended for vacuum vapor priming; diluted primer is recommended for liquid-phase priming applications." }, "rehydration": null, "softbake": { "temp_c": 115, "time_s": 60, "method": "hotplate", "notes": "Consistent across all process-condition tables in the datasheet (Tables 1-8).", "source": "e.g. Table 1, p.1: \"Softbake 115°C/60 sec. Hotplate\"" }, "exposureDose": { "doses": [ { "wavelength_nm": 436, "value_mJcm2": 150, "source": "Table 9 (\"Lithographic Responses Summary\"), p.4: \"Sizing Energy 150 mJ/cm2 (1.3 E0)\"; E0 = 82 mJ/cm2 from Figure 6 contrast curve, p.4" } ], "basisCopy": "The 150 mJ/cm² sizing energy is a g-line number — 1.3× the 82 mJ/cm² clearing dose, measured on GCA and Nikon g-line steppers. Nothing equivalent is published at 365 or 405 nm." }, "peb": { "temp_c": null, "time_s": null, "notes": "Not addressed anywhere in this datasheet. The described process flow is softbake -> expose -> develop with no post-exposure bake step mentioned.", "source": null }, "floodExposure": { "dose_mJcm2": null, "notes": "Not applicable / not addressed - S1813 is a standard single-exposure positive photoresist in this datasheet, with no image-reversal or flood-exposure step described.", "source": null }, "develop": { "developer": "MICROPOSIT MF-319 metal-ion-free (MIF) developer family (stated as optimized for); also compatible with metal-ion-bearing (MIB) MICROPOSIT developers. Individual test figures cite MF-31 (i.e. MF-319) and MF-321 by name.", "dilution": "Test conditions in Tables 4, 7 and 8 use MF-319/MF-321 diluted 1:10 (\"MF-31/10\", \"MF-321/10\"); Table 1 does not name a specific developer or dilution.", "time_s": null, "method": "Double Spray Puddle (DSP) at 21°C in all cited process-condition tables", "rinse": null, "source": "e.g. Table 1, p.1: \"Develop 15 +50 sec. Double Spray Puddle (DSP) @ 21°C\"; Tables 4, 7, 8, p.3-4: \"MF-31/10 +30 DSP @ 21°C\" / \"MF-321/10 +30 DSP @ 21°C\"" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "Not addressed in this datasheet.", "source": null }, "descum": null, "applications": [ "general-prototyping", "etch-mask" ], "etchResistance": null, "liftoffSuitable": false, "platingSuitable": false, "stripper": "Datasheet states only that \"residue-free photoresist removal\" is achieved \"using standard MICROPOSIT removers\", without naming a specific product.", "storage": "\"Store products in tightly closed original containers at temperatures recommended on the product label\" (no specific temperature is given in the datasheet text itself). Shelf life/expiry is not otherwise quantified here.", "notes": "S1813 is a standard positive DNQ/novolak-class g-line resist (chemistry classification based on well-established industry knowledge of this product family; this specific TDS does not itself restate the chemical composition). Reach for S1813 when you want the series' balanced, best-documented option rather than pushing to the thin (S1805) or thick (S1818) ends of the family — it is the one grade whose exposure, contrast and develop behaviour the manufacturer actually measured in this datasheet. Its ~85 deg wall angle (Table 9) and single-tone positive process (no reversal/undercut step described) make it unsuited to lift-off without an added process (e.g. bilayer or image-reversal), and this datasheet makes no lift-off or electroplating claims. The published spin-speed figure (Figure 2) carries no accompanying numeric table - the only explicit numbers are the two reference coating thicknesses (12,300 A and 13,675 A) used across its process-condition tables. Develop time and post-exposure/hardbake steps are largely unaddressed or inconsistent across the datasheet's own example tables.", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "title": "Mechanical Properties of Microposit S1813 Thin Layers", "authors": "Nikolaev et al.", "journal": "Advanced Structured Materials", "year": 2020, "doi": "10.1007/978-3-030-48161-2_9", "url": "https://doi.org/10.1007/978-3-030-48161-2_9", "accessedDate": "2026-07-15", "summary": "Nanoindentation study of the mechanical properties of Microposit S1813 thin films (a book/proceedings chapter, not a standalone journal article)." }, { "type": "paper", "title": "Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE)", "authors": "Gerlt et al.", "journal": "Micromachines", "year": 2021, "doi": "10.3390/mi12050542", "url": "https://doi.org/10.3390/mi12050542", "accessedDate": "2026-07-15", "summary": "Uses 1.4 um Microposit S1813 (with AZ nLOF 2070) as an etch mask for a Bosch DRIE process; an added third step raises mask selectivity, reaching deep-silicon etch depths beyond 450 um." }, { "type": "paper", "title": "Fabrication of Large-Area Silicon Spherical Microlens Arrays by Thermal Reflow and ICP Etching", "authors": "Wu et al.", "journal": "Micromachines", "year": 2024, "doi": "10.3390/mi15040460", "url": "https://doi.org/10.3390/mi15040460", "accessedDate": "2026-07-15", "summary": "Thermally reflows Microposit S1813 into hemispherical microlenses, then transfers them by ICP etching into a 128x128 silicon spherical microlens array with nanometre-scale surface roughness." } ], "troubleshooting": [ { "q": "What exposure dose does MICROPOSIT S1813 need?", "a": "The datasheet gives a sizing (E-size) energy of 150 mJ/cm² on g-line (436 nm) exposure tools — equal to 1.3× the clearing dose E0 = 82 mJ/cm² from the contrast curve. Exposure is optimized for 436 nm and usable across 350–450 nm. No i-line (365 nm) or h-line (405 nm) dose is published, and Table 6's Dill A/B coefficients are absorption parameters, not doses — don't treat them as one.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Table 9 + Figure 6 contrast curve, p.4" }, { "q": "Does S1813 need a post-exposure bake?", "a": "No PEB is described in this datasheet — the process flow is soft bake, expose, then develop. Table 6's Dill A/B coefficients at 365 and 436 nm are optical absorption parameters for lithography simulators, not a bake or a dose. If your process needs standing-wave control, a PEB would have to be developed on-tool.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — process description + Table 6, p.3" }, { "q": "Which developer and develop time should I use for S1813?", "a": "S1813 is optimized for the MICROPOSIT MF-319 metal-ion-free developer and is also compatible with metal-ion-bearing MICROPOSIT developers. The datasheet's example conditions use MF-319/MF-321 diluted 1:10 by Double Spray Puddle at 21°C. Develop time varies between examples (15+50 s vs +30 s), so no single standard time is published — set it on-tool.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Tables 1, 4, 7, 8" }, { "q": "What thickness and spin speed does S1813 give?", "a": "On the Figure 2 spin-speed chart the S1813 G2 trace runs from about 1.9 µm at 2,000 rpm down to 1.03 µm at 7,000 rpm. Maximum coating uniformity is typically attained between 3,500 and 5,500 rpm; the coating soft bake for that chart was 115°C for 60 s on a hotplate. The two printed reference thicknesses (12,300 Å and 13,675 Å) are fixed-film conditions for other test figures, not spin-curve points.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Figure 2, p.2" }, { "q": "Can I use S1813 for lift-off?", "a": "Not without an added process. S1813's roughly 85° sidewall angle and single-tone positive process (no image-reversal or undercut step is described) make it unsuited to lift-off on its own; a bilayer or an image-reversal scheme would be required. The datasheet makes no lift-off or electroplating claim for S1813.", "source": "MICROPOSIT S1800 G2 Series Photoresists datasheet (Rohm and Haas Electronic Materials, ME06N041 Rev. 0, October 2006) — Table 9 wall angle, p.4" } ], "provenance": { "datasheetUrl": "https://www.nanophys.kth.se/nanolab/resists/S1813/Microposit_S1800_G2_Serie.pdf", "datasheetVersionOrDate": "ME06N041, Rev. 0, October 2006 (Rohm and Haas Electronic Materials)", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://kayakuam.com/products/microposit-s1800-g2-series-photoresists/", "what": "Confirms Kayaku Advanced Materials currently lists/sells the MICROPOSIT S1800 G2 series (used only to support 'status: active'); the page itself returned HTTP 403 to automated fetch during this session, so its content was not used for any numeric field." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "s1805", "name": "Microposit S1805", "min_um": null, "max_um": null, "doseBasis": null }, { "slug": "s1818", "name": "Microposit S1818", "min_um": null, "max_um": null, "doseBasis": null }, { "slug": "s1822", "name": "S1822", "min_um": null, "max_um": null, "doseBasis": null } ], "humanVerified": false }, { "slug": "s1822", "name": "S1822", "manufacturer": "Shipley Company", "productLine": "MICROPOSIT S1800 series", "aliases": [ "MICROPOSIT S1822", "MICROPOSIT S1822 PHOTO RESIST" ], "tone": "positive", "chemistry": "dnq-novolak", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not discussed anywhere in the document. S1800 is positioned as a standard positive resist for fine line/space IC masking (down to 0.48 µm in the worked S1813 example); no grayscale or 3-D patterning claim is made for the series or for S1822 specifically.", "status": "discontinued", "successorSlug": null, "summary": "MICROPOSIT S1822 was the thickest grade of Shipley's original (1993) MICROPOSIT S1800 positive photoresist series, coating roughly 1.5–3.2 µm — heavier than even S1818. The later 2006 G2 edition drops it, so its current availability needs a human check.", "thicknessRange": null, "spinCurves": [ { "label": "S1822", "points": [ { "rpm": 2000, "um": 3.2 }, { "rpm": 3000, "um": 2.5 }, { "rpm": 4000, "um": 2.1 }, { "rpm": 5000, "um": 1.85 }, { "rpm": 6000, "um": 1.65 }, { "rpm": 7000, "um": 1.5 } ], "source": "read from figure, 'MICROPOSIT S1800 PHOTO RESIST UNDYED SERIES, Spin Speed Curves' (Figure 1), p.2 of MICROPOSIT S1800 Series Photo Resists datasheet (Shipley Company, document code MPR S1800 1093, 1993 edition); identified as the topmost, thickest of five plotted traces (open-square marker, shared shape with S1811 — disambiguated by curve position, since S1822 is listed first in the legend and, consistent with it being the highest-viscosity/thickest-film grade in the family, plots as the uppermost curve at every spin speed with no crossings against S1818/S1813/S1811/S1805); read at gridline/marker crossings every 1,000 rpm from 2,000–7,000 rpm off a linear-linear chart (thickness 0–40,000 Å, spin speed 1,000–8,000 rpm); no numeric table or rpm-paired anchor is published anywhere else in the document for S1822 — visual chart-reading only, typical uncertainty ~10–15%.", "figureRead": true } ], "spinNotes": "Figure 1 ('MICROPOSIT S1800 PHOTO RESIST UNDYED SERIES, Spin Speed Curves', p.2) plots five undyed grades — S1822, S1818, S1813, S1811, S1805 — photoresist thickness (Å) vs spin speed (1000–8000 rpm). S1822 is identified as the topmost, thickest trace of the five. The legend reuses the same open-square marker for both S1822 and S1811, so marker shape alone cannot distinguish them; disambiguation here is by curve position — S1822 is listed first in the legend and, consistent with it being the highest-viscosity/thickest-film grade in the family (the curve ordering top-to-bottom is S1822 > S1818 > S1813 > S1811 > S1805), it plots as the uppermost, thickest curve on the chart. The trace plotted here was read from gridline/marker crossings at 1,000 rpm intervals from 2,000–7,000 rpm, spanning roughly 3.20 µm (2,000 rpm) down to 1.50 µm (7,000 rpm); no numeric table or rpm-paired anchor is published anywhere else in the document for S1822, so the values carry typical chart-reading uncertainty of about 10–15%. No single-point anchor (e.g. 'X µm at Y rpm') is stated anywhere else in the document for S1822. Softbake for the wafers used to generate Figures 1 and 2 was 115°C/60 s hotplate (Process Parameters box, p.2, keyed 'Refer to Figures 1 and 2') — this is the test condition tied to the figure that includes S1822, not a grade-specific recommendation, and is recorded separately below under softbake.", "adhesion": { "hmds": true, "notes": "\"MICROPOSIT S1800 SERIES PHOTO RESISTS work well with the hexamethyldisilazane based MICROPOSIT PRIMERS. Concentrated MICROPOSIT PRIMER is recommended when vacuum vapor priming. Diluted PRIMER is recommended for liquid phase priming applications.\" (Substrate Preparation, p.2 — series-wide statement covering S1822.)" }, "rehydration": null, "softbake": { "temp_c": 115, "time_s": 60, "method": "hotplate", "notes": "This is the coat/softbake condition printed in the 'Process Parameters (Refer to Figures 1 and 2)' box on p.2, i.e. the condition used to generate the undyed-series spin-speed chart that includes S1822 (Substrate: Silicon, Coat: SVG 81, Measure: Nanometrics 210). It is a documented test condition for the chart, not an explicit grade-specific recommendation for S1822.", "source": "Process Parameters box (\"Refer to Figures 1 and 2\"), p.2" }, "exposureDose": { "doses": [], "basisCopy": "S1822 is absent from this edition's optical-constant table, which covers S1813, S1813 D1, S1811 J2 and S1818 J1, and the one sizing energy in it is S1813's. What is left is 350 to 450 nm, optimized at 436 nm." }, "peb": null, "floodExposure": null, "develop": { "developer": "MICROPOSIT MF-319 Metal-Ion-Free (MIF) DEVELOPER family", "dilution": null, "time_s": null, "method": null, "rinse": null, "source": "Develop Properties, feature list, p.1 (\"Optimized for use with the MICROPOSIT MF-319 Metal-Ion-Free DEVELOPER family\" / \"Compatible with Metal-Ion-Bearing MICROPOSIT DEVELOPERS\"); DEVELOP section, p.4" }, "hardbake": null, "descum": null, "applications": [], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": null, "stripper": "Standard MICROPOSIT REMOVERS — \"Residue-free photoresist removal using standard MICROPOSIT REMOVERS\" (Removal Property, feature list, p.1; series-wide, no specific remover product named).", "storage": "Store MICROPOSIT S1800 PHOTO RESISTS only in upright, original containers in a dry area at 50°-70°F (10°-21°C). Store away from light, oxidants, heat, and sources of ignition. Do not store in sunlight. Keep container sealed when not in use. (Storage section, p.5 — series-wide statement covering S1822.)", "notes": "S1822 was the thickest-film grade in Shipley's undyed MICROPOSIT S1800 series — a line that passed to Rohm and Haas Electronic Materials, then Dow, and eventually Kayaku Advanced Materials as the industry consolidated. It was the grade to reach for when S1818 could not lay down enough film in a single coat. Confirm availability before designing it in: the 2006 S1800 G2 edition lists only S1805, S1811, S1813 and S1818, and S1822 does not appear in it. Take the published numbers narrowly. The exposure dose, Dill optical parameters, contrast curve, masking-linearity and exposure- and focus-latitude data printed alongside S1822 are worked for S1813, and must not be carried into an S1822 process window. What does apply is series-wide: the g-line/broadband exposure range, HMDS priming, MF-319-family MIF developer compatibility, storage conditions, and S1822's position as the topmost, thickest trace in the undyed spin-speed chart (Figure 1). Like other thick-film DNQ positives of its era, S1822 is the kind of coating most likely to need an edge-bead removal step and a relaxation wait after spin-coating before bake — neither is specified for it, so establish both on your own tool. The dnq-novolak classification comes from Kayaku's series-wide S1800 G2 statement and the Dow/Rohm and Haas S1818 MSDS composition table (cresol novolak resin with a diazo photoactive compound).", "developerFamily": "tmah-or-buffered-alkaline", "references": [ { "type": "paper", "accessedDate": "2026-07-16", "title": "Turning traditionally nonwetting surfaces wetting for even ultra-high surface energy liquids", "authors": "Wilke et al.", "journal": "Proceedings of the National Academy of Sciences", "year": 2022, "doi": "10.1073/pnas.2109052119", "summary": "Spin-coats a 2.5 um layer of Microposit S1822 onto oxidized silicon and exposes it on an MLA150 maskless aligner to define the micropillar etch mask for the hemiwicking surfaces studied.", "note": "Maskless usage: patterned directly on an MLA150 maskless aligner, with no photomask.", "url": "https://doi.org/10.1073/pnas.2109052119" }, { "type": "paper", "accessedDate": "2026-07-16", "title": "Milliwatt-level UV generation using sidewall poled lithium niobate", "authors": "Franken et al.", "journal": "Nature Communications", "year": 2026, "doi": "10.1038/s41467-026-68524-y", "summary": "Patterns alignment markers in S1822 on a thin-film lithium niobate chip and dry-etches them into the film, then reuses an S1822 layer over the electrodes as a barrier preventing breakdown during ferroelectric poling.", "note": "Two distinct S1822 roles in one flow: an etch mask, and a dielectric barrier during poling.", "url": "https://doi.org/10.1038/s41467-026-68524-y" } ], "troubleshooting": [ { "q": "Is MICROPOSIT S1822 still available?", "a": "Treat it as discontinued pending a human check. S1822 is documented only in the superseded 1993 Shipley edition of the S1800 datasheet; the current 2006 S1800 G2 edition omits it entirely, listing only S1805/S1811/S1813/S1818 in its undyed-series legend. Confirm current availability before specifying it, and look to the surviving G2 grades for a thick single coat.", "source": "MICROPOSIT S1800 Series Photo Resists datasheet (Shipley Company, MPR S1800 1093, 1993 edition) — undyed-series legend, p.2" }, { "q": "How thick a film does S1822 coat?", "a": "S1822 was the thickest of the five undyed grades in the 1993 series, plotting above even S1818 on Figure 1. Its trace runs from about 3.2 µm at 2,000 rpm down to 1.5 µm at 7,000 rpm. These are a figure read with roughly ±10–15% uncertainty and no numeric table anchor, so confirm the target thickness on-tool.", "source": "MICROPOSIT S1800 Series Photo Resists datasheet (Shipley Company, MPR S1800 1093, 1993 edition) — Figure 1 undyed-series spin-speed curves, p.2" }, { "q": "What exposure dose should I use for S1822?", "a": "No dose is published for S1822. The only sizing energy in the document — 150 mJ/cm² — is explicitly attributed to S1813, not S1822, and must not be borrowed; Table 1's Dill parameters likewise cover only other grades. The series is exposable across 350–450 nm, optimized for 436 nm (g-line); characterize a working dose on-tool.", "source": "MICROPOSIT S1800 Series Photo Resists datasheet (Shipley Company, MPR S1800 1093, 1993 edition) — Exposure section p.3; Table 2 (S1813-specific), p.4" }, { "q": "Which developer should I use for S1822?", "a": "The datasheet gives only a series-wide statement: the S1800 resists are optimized for the MICROPOSIT MF-319 metal-ion-free developer family and are also compatible with metal-ion-bearing MICROPOSIT developers. No S1822-specific dilution, develop time or method is published — every numeric develop example in the document is tied to S1813.", "source": "MICROPOSIT S1800 Series Photo Resists datasheet (Shipley Company, MPR S1800 1093, 1993 edition) — Develop Properties p.1; DEVELOP section p.4" }, { "q": "What soft bake does S1822 need?", "a": "The only soft-bake condition tied to S1822 is 115°C for 60 s on a hotplate — the coat/soft-bake condition in the Process Parameters box used to generate the undyed-series spin-speed chart that includes S1822 (silicon substrate, SVG 81 coater, Nanometrics 210). It is a documented test condition, not a grade-specific recommendation.", "source": "MICROPOSIT S1800 Series Photo Resists datasheet (Shipley Company, MPR S1800 1093, 1993 edition) — Process Parameters box, p.2" } ], "provenance": { "datasheetUrl": "https://amolf.nl/wp-content/uploads/2016/09/datasheets_S1800.pdf", "datasheetVersionOrDate": "MPR S1800 1093 (printed at the foot of p.1, bottom-right corner)", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.nanophys.kth.se/nanolab/resists/S1813/Microposit_S1800_G2_Serie.pdf", "what": "The newer 2006 Rohm and Haas 'S1800 G2 Series' datasheet (ME06N041 Rev. 0), checked and found to NOT list S1822 in its undyed-series legend (only S1805/S1811/S1813/S1818 appear); cited for comparison to justify retaining this superseded 1993 edition as S1822's only located source, not as a data source for S1822 itself." }, { "url": "https://kayakuam.com/products/microposit-s1800-g2-series-photoresists/", "what": "Kayaku's MICROPOSIT S1800 G2 series page states the series-wide formulation (mixed cresol novolak resin + diazo photoactive compound); used as the basis for classifying S1822 as dnq-novolak, corroborated by the Dow/Rohm and Haas S1818 MSDS composition table." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "s1813", "name": "S1813", "min_um": 1.03, "max_um": 1.9, "doseBasis": "150 mJ/cm² @ 436 nm" }, { "slug": "s1805", "name": "Microposit S1805", "min_um": null, "max_um": null, "doseBasis": null }, { "slug": "s1818", "name": "Microposit S1818", "min_um": null, "max_um": null, "doseBasis": null } ], "humanVerified": false }, { "slug": "su-8-2025", "name": "SU-8 2025", "manufacturer": "MicroChem", "productLine": "SU-8 2000 series", "aliases": [ "SU8 2025", "MicroChem SU-8 2025" ], "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed by the datasheet. The document presents SU-8 2000 exclusively for binary, high-aspect-ratio, vertical-sidewall permanent structures (\"high aspect ratio imaging\", \"vertical sidewalls\"); it makes no mention of grayscale or partial-exposure profiling.", "status": "active", "successorSlug": null, "summary": "SU-8 2025 is the thin-film choice within the SU-8 2000 epoxy family — reached for when a high-aspect-ratio permanent structure needs a coat in the tens-of-microns range rather than the far thicker films its higher-viscosity siblings (SU-8 2050 and 2100) deliver. SU-8 2025 is a mid-viscosity member of MicroChem's SU-8 2000 epoxy negative photoresist series, coating roughly 20-80 µm in a single pass for high-aspect-ratio, permanent microstructures.", "thicknessRange": { "min_um": 21.7, "max_um": 79.2, "basis": "curve-span", "source": "curve-span: the document states no single achievable-thickness range for SU-8 2025 specifically (only thickness-binned process tables shared across all four grades in this doc); the range here is the min/max of the SU-8 2025 curve in Figure 1 (4000 rpm to 1000 rpm)." }, "spinCurves": [ { "label": "SU-8 2025", "points": [ { "rpm": 1000, "um": 79.2 }, { "rpm": 2000, "um": 40.8 }, { "rpm": 3000, "um": 28.2 }, { "rpm": 4000, "um": 21.7 } ], "source": "read from Figure 1 \"SU-8 2000 Spin Speed versus Thickness\", p.2 of MicroChem \"SU-8 2000 Permanent Epoxy Negative Photoresist Processing Guidelines for SU-8 2025, SU-8 2035, SU-8 2050 and SU-8 2075\" (AMOLF mirror). The chart plots four curves (SU-8 2075/circle, 2050/triangle, 2035/diamond, 2025/square), each with only 4 markers at 1000/2000/3000/4000 rpm. SU-8 2025 is the square-marker series and the lowest (thinnest-film) of the four at every rpm, consistent with its legend position (listed last: 2075, 2050, 2035, 2025) and Table 1's viscosity ordering (2025 = 4500 cSt, the lowest of the four, so it coats thinnest at a given speed). No numeric table accompanies the figure.", "figureRead": true } ], "spinNotes": "Recommended program (same for all grades in this document): dispense 1 ml of resist per inch (25 mm) of substrate diameter; spin at 500 rpm for 5-10 s at 100 rpm/s acceleration, then spin at the target speed (per Figure 1) for 30 s at 300 rpm/s acceleration. Edge bead removal (EBR) with MicroChem's EBR PG solvent stream at the wafer edge is recommended before soft bake, both to limit hotplate contamination and to let the photomask reach close contact with the wafer. Source: \"Coat\" / \"Recommended Program\" / \"Edge Bead Removal (EBR)\", p.2.", "adhesion": { "hmds": false, "notes": "\"Adhesion promoters are typically not required.\" HMDS pretreatment (MCC Primer 80/20) is recommended only \"for applications that include electroplating.\" Source: \"Substrate Preparation\", p.2." }, "rehydration": null, "softbake": { "temp_c": null, "time_s": null, "method": "hotplate", "notes": "Published only as a THICKNESS-BINNED table shared by all four grades covered in this document (SU-8 2025/2035/2050/2075), not a single value per grade: 25-40 µm → 0-3 min @65°C then 5-6 min @95°C; 45-80 µm → 0-3 min @65°C then 6-9 min @95°C; 85-110 µm → 5 min @65°C then 10-20 min @95°C; 115-150 µm → 5 min @65°C then 20-30 min @95°C; 160-225 µm → 7 min @65°C then 30-45 min @95°C. SU-8 2025's own spin curve spans roughly 22-80 µm (1000-4000 rpm), i.e. mostly the 25-40 and 45-80 µm bins. Convection ovens are explicitly not recommended (can skin over and trap solvent). A cool-down/re-heat 'wrinkle' check is described to confirm the film is fully dry.", "source": "Table 2 \"Soft Bake Times\", p.2 of the MicroChem SU-8 2000 (2025-2075) Processing Guidelines" }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "spun-film", "bins": [ { "um_min": 25, "um_max": 40, "mJ_min": 150, "mJ_max": 160 }, { "um_min": 45, "um_max": 80, "mJ_min": 150, "mJ_max": 215 }, { "um_min": 85, "um_max": 110, "mJ_min": 215, "mJ_max": 240 }, { "um_min": 115, "um_max": 150, "mJ_min": 240, "mJ_max": 260 }, { "um_min": 160, "um_max": 225, "mJ_min": 260, "mJ_max": 350 } ], "source": "Table 3 'Exposure Dose' of the MicroChem SU-8 2000 (2025-2075) Processing Guidelines — one table indexed by film thickness, shared by SU-8 2025, 2035, 2050 and 2075. Not attributed to a specific wavelength (the document recommends i-line but states conventional UV, 350-400 nm, is most common)." } ], "basisCopy": "The dose table starts at 25 µm, above where SU-8 2025's own spin range begins at 21.7 µm. From 25 to 40 µm it asks 150–160 mJ/cm², and 150–215 mJ/cm² from 45 to 80 µm, which reaches this grade's 79.2 µm top end." }, "peb": { "temp_c": null, "time_s": null, "notes": "Also thickness-binned across the whole grade family: 25-40 µm → 1 min @65°C (optional stress-reduction step) then 5-6 min @95°C; 45-80 µm → 1-2 min @65°C then 6-7 min @95°C; 85-110 µm → 2-5 min @65°C then 8-10 min @95°C; 115-150 µm → 5 min @65°C then 10-12 min @95°C; 160-225 µm → 5 min @65°C then 12-15 min @95°C. After 1 minute of PEB at 95°C a latent mask image should already be visible; if not, exposure and/or heating was insufficient.", "source": "Table 5 \"Post Exposure Bake Times\", p.3" }, "floodExposure": null, "develop": { "developer": "SU-8 Developer (MicroChem)", "dilution": null, "time_s": null, "method": "immersion", "rinse": "IPA", "source": "\"Development\" and \"Rinse and Dry\" sections plus Table 6 \"Development Times for SU-8 Developer\", p.3-4" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 150, "max": 250 }, "time_s": null, "timeRange_s": { "min": 300, "max": 1800 }, "notes": "Hard bake (cure) is optional and generally only needed if the finished device will see thermal processing in use; recommended final bake temperature is 10°C above the maximum expected device operating temperature. Typical range: 150-250°C for 5-30 minutes depending on degree of cure required. Separately, a short 150°C bake \"for a couple of minutes\" is recommended (all thicknesses) specifically to anneal any surface cracks seen after development.", "source": "\"Hard Bake (cure)\" section, p.4" }, "descum": null, "applications": [ "high-aspect-ratio", "mems-structural", "electroplating-molding" ], "etchResistance": null, "liftoffSuitable": false, "platingSuitable": true, "stripper": "MicroChem Remover PG swells and lifts only minimally cross-linked SU-8 2000. A fully cured/hard-baked film cannot be removed with Remover PG alone — it requires an OmniCoat (30-100 nm) sacrificial underlayer (heat Remover PG to 50-80°C, immerse 30-90 min) or an oxidizing strip (piranha etch, plasma ash, RIE, laser ablation, or pyrolysis). RIE recipe given: 200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10°C. Source: \"Removal\" / \"Plasma Removal\", p.5.", "storage": "Store upright in tightly closed containers, cool and dry, away from direct sunlight, at 40-70°F (4-21°C); away from light, acids, heat, and ignition sources. Shelf life is twelve months from date of manufacture. Source: \"Storage\", p.5.", "notes": "SU-8 2025 is the lowest-viscosity grade covered by this processing document (4500 cSt vs. up to 22,000 cSt for SU-8 2075) and spin-coats to roughly 20-80 µm depending on speed. Pick 2025 when your target film sits in the low tens of microns and you want the shortest bakes and best feature fidelity the 2000 family offers at that thickness; step up to SU-8 2050 or 2100 for progressively thicker single coats. Like every SU-8 2000 grade, it cross-links in two stages — exposure generates acid, and the post-exposure bake thermally drives the epoxy cross-linking — so PEB is a required processing step, not an optional cure. Soft-bake, PEB, dose and develop times are published only as thickness-binned ranges shared across the whole 2025-2075 family; treat the low end of the matching bin as a starting point and use the datasheet's cool-down/re-heat 'wrinkle' test to confirm the soft bake is complete. Once fully cross-linked, SU-8 is notoriously hard to strip: plain solvent remover only works on minimally exposed/baked film, and a hard-baked structure needs either a sacrificial OmniCoat layer beneath it or an oxidizing strip (piranha, plasma ash, RIE, laser ablation, pyrolysis) to remove. Edge bead removal before soft bake is recommended for every grade in this series to keep the photomask in close contact with the wafer and preserve resolution and aspect ratio in thick films.", "developerFamily": "solvent", "references": [ { "type": "paper", "title": "Negative photoresists for optical lithography", "authors": "Shaw et al.", "journal": "IBM Journal of Research and Development", "year": 1997, "doi": "10.1147/rd.411.0081", "url": "https://doi.org/10.1147/rd.411.0081", "accessedDate": "2026-07-15", "summary": "The IBM origin paper for the EPON-based epoxy negative resist that became SU-8, describing its formulation and use as a thick optical-lithography resist.", "note": "Family-level SU-8 reference (the foundational chemistry paper), cited here for the SU-8 2025 grade." }, { "type": "paper", "title": "SU-8: a low-cost negative resist for MEMS", "authors": "Lorenz et al.", "journal": "Journal of Micromechanics and Microengineering", "year": 1997, "doi": "10.1088/0960-1317/7/3/010", "url": "https://doi.org/10.1088/0960-1317/7/3/010", "accessedDate": "2026-07-15", "summary": "Established SU-8 as a MEMS structural resist, producing thick high-aspect-ratio structures by near-UV lithography.", "note": "Family-level SU-8 reference, cited here for the SU-8 2025 grade." }, { "type": "paper", "title": "SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography", "authors": "del Campo, Greiner", "journal": "Journal of Micromechanics and Microengineering", "year": 2007, "doi": "10.1088/0960-1317/17/6/R01", "url": "https://doi.org/10.1088/0960-1317/17/6/R01", "accessedDate": "2026-07-15", "summary": "Widely cited review of SU-8 processing (coat, bake, expose, develop) for high-aspect-ratio and 3D microstructures across the SU-8 family.", "note": "Family-level SU-8 review, cited here for the SU-8 2025 grade." } ], "troubleshooting": [ { "q": "What is the exposure dose for SU-8 2025?", "a": "The datasheet publishes dose by film thickness, not per grade. SU-8 2025 coats roughly 22–80 µm, so its dose falls in the 150–160 mJ/cm² (25–40 µm) and 150–215 mJ/cm² (45–80 µm) bins. i-line (365 nm) is the recommended wavelength, though conventional UV (350–400 nm) is also used. Multiply by ~1.5× on glass/ITO and 1.5–2× on most metals versus silicon. No separate 405 nm (h-line) dose is published — characterize on-tool.", "source": "MicroChem SU-8 2000 (2025–2075) Processing Guidelines — Table 3 exposure dose + p.1 wavelength statement; substrate multipliers Table 4" }, { "q": "Does SU-8 2025 need a post-exposure bake, and why?", "a": "Yes — PEB is a required step, not an optional cure. SU-8 cross-links in two stages: exposure generates photoacid, and the post-exposure bake thermally drives the epoxy cross-linking. Times are thickness-binned; for SU-8 2025's ~22–80 µm range they run about 1 min at 65°C (optional stress-reduction step) then 5–7 min at 95°C. A latent mask image should be visible after ~1 min at 95°C; if not, exposure or heating was insufficient.", "source": "MicroChem SU-8 2000 (2025–2075) Processing Guidelines — Table 5 Post Exposure Bake Times, p.3" }, { "q": "What soft bake does SU-8 2025 need?", "a": "Soft-bake times are published per thickness bin, shared across the SU-8 2025–2075 grades. For SU-8 2025's typical films: 25–40 µm → 0–3 min at 65°C then 5–6 min at 95°C; 45–80 µm → 0–3 min at 65°C then 6–9 min at 95°C. Use a level hotplate — convection ovens are not recommended (a skin can trap solvent). Cool the wafer then reheat; if the film wrinkles, bake longer and repeat until wrinkles disappear.", "source": "MicroChem SU-8 2000 (2025–2075) Processing Guidelines — Table 2 Soft Bake Times, p.2" }, { "q": "Which developer does SU-8 2025 use?", "a": "SU-8 Developer (MicroChem), used undiluted by immersion, spray, or spray-puddle (ethyl lactate and diacetone alcohol also work). Immersion times are thickness-binned: 25–40 µm → 4–5 min; 45–75 µm → 5–7 min. Rinse ~10 s with fresh developer, then ~10 s IPA, then dry with filtered N2. A white film after the IPA rinse means underdevelopment — repeat the develop-and-rinse cycle rather than relying on IPA to finish.", "source": "MicroChem SU-8 2000 (2025–2075) Processing Guidelines — Development / Rinse and Dry + Table 6, p.3–4" }, { "q": "Why is my SU-8 2025 cracking after development?", "a": "Surface cracks after development come from film stress. The datasheet recommends a short 150°C bake for a couple of minutes (all thicknesses) specifically to anneal cracks seen after development. A full hard bake is otherwise optional and only needed if the device will see thermal processing in use — typically 150–250°C for 5–30 min, at roughly 10°C above the maximum expected operating temperature.", "source": "MicroChem SU-8 2000 (2025–2075) Processing Guidelines — Hard Bake (cure) section, p.4" } ], "provenance": { "datasheetUrl": "https://amolf.nl/wp-content/uploads/2016/09/datasheets_SU-82000DataSheet2025thru2075Ver4.pdf", "datasheetVersionOrDate": "No revision/date string is printed in the document body (a 5-page processing-guidelines PDF with no header/footer revision code). The mirror's filename indicates 'Ver4'.", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "su-8-2050", "name": "SU-8 2050", "min_um": 40.1, "max_um": 171, "doseBasis": null }, { "slug": "su-8-2100", "name": "SU-8 2100", "min_um": 103, "max_um": 269, "doseBasis": null } ], "humanVerified": false }, { "slug": "su-8-2050", "name": "SU-8 2050", "manufacturer": "Kayaku Advanced Materials", "productLine": "SU-8 2000 series", "aliases": [ "SU8 2050", "MicroChem SU-8 2050" ], "tone": "negative", "chemistry": "epoxy", "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet. SU-8 2000 is a chemically-amplified negative epoxy resist optimized for binary high-aspect-ratio structures (near-vertical sidewalls, high contrast); the datasheet gives no partial-crosslink / grayscale dose-response data, so grayscale suitability cannot be confirmed from this source.", "status": "active", "successorSlug": null, "summary": "SU-8 2050 is the mid-range thick-film workhorse of the SU-8 2000 family — the grade most MEMS and microfluidics processes default to when they need tall, robust structures without stepping up to the very thickest SU-8 2100/2150 coats. SU-8 2050 is a high-viscosity (12,900 cSt, 71.65% solids) grade in Kayaku Advanced Materials' SU-8 2000 epoxy photoresist series, formulated for thick, high-aspect-ratio, permanent MEMS and micromachining structures. It crosslinks via UV-generated photoacid followed by thermally-driven epoxy crosslinking during post-exposure bake, yielding a chemically and thermally stable, mechanically robust film that is normally left on the device rather than stripped.", "thicknessRange": { "min_um": 40.1, "max_um": 171, "basis": "curve-span", "source": "curve-span: the SU-8 2000 datasheet (April 2021, UBC mirror) states only a family-wide \"0.5 to >200 µm single coat\" range covering all twelve viscosities (Description/Features, p.1), not an SU-8 2050-specific achievable range; the only 2050 thickness data is the multi-grade Figure 1 (Thickness vs. Spin Speed, p.2). min/max are the span of this recipe's own figure-read SU-8 2050 curve (40.1 µm at 4000 rpm to 171 µm at 1000 rpm)." }, "spinCurves": [ { "label": "SU-8 2050", "points": [ { "rpm": 1000, "um": 171 }, { "rpm": 2000, "um": 75.5 }, { "rpm": 3000, "um": 53 }, { "rpm": 4000, "um": 40.1 } ], "source": "read from Figure 1 'SU-8 2000 Thickness vs. Spin Speed', p.2 of SU-8 2000 (2025-2100) Technical Data Sheet, Kayaku Advanced Materials, April 2021 — the chart plots four family curves (2025/2035/2050/2075) together with axis gridlines every 20 µm (0-240) and every 500 rpm (500-4500); no numeric table is published for this figure. The chart is drawn as vector paths rather than a raster image, so the marker positions read exactly. It plots exactly FOUR markers per series, at 1000/2000/3000/4000 rpm only. SU-8 2050 is the second-from-top series (triangle marker) by y-order at each rpm column, consistent with its rank between SU-8 2075 (top) and SU-8 2035 (third).", "figureRead": true } ], "spinNotes": "Kayaku's stated 'Recommended Program' (family-wide, not thickness-specific): dispense 1 ml resist per inch (25 mm) of substrate diameter; spin at 500 rpm for 5-10 s at 100 rpm/s acceleration (spread step); then spin at 2000 rpm for 30 s at 300 rpm/s acceleration as a generic starting point — the actual final rpm/time should be taken from Figure 1 for the desired thickness. Edge-bead removal (EBR) with a solvent stream (Kayaku EBR PG) at the wafer edge is recommended so the mask can seat in close contact. Secondary/practical (Cornell Nanoscale Facility SOP, university source, not the vendor): pour SU-8 2050-or-thicker from stock into small working bottles at least 24 h before spinning to let entrained bubbles dissipate; for layers ≥150 µm, let the wafer rest on the spinner after spin-up so hanging edge resist can retract back onto the wafer before wiping the edge bead, since a fully removed edge bead will just reflow into the gap during softbake.", "adhesion": { "hmds": false, "notes": "Adhesion promoters are stated as 'typically not required' for standard use. Substrates should simply be clean and dry — piranha wet etch (H2SO4 + H2O2) + DI rinse, or RIE / O2 barrel-ashing, is recommended for best results. The one exception: for applications involving electroplating, a substrate pre-treatment with HMDS IS recommended." }, "rehydration": null, "softbake": { "temp_c": 95, "time_s": null, "method": "hotplate", "notes": "Datasheet times are given per THICKNESS bracket, not per grade, so bake to the bracket matching the film actually coated. For a nominal SU-8 2050 film in the 45-80 µm range (matching ~3000 rpm per the spin curve above), Table 2 specifies 0-3 min at 65°C followed by 6-9 min at 95°C — two separate stages, the 65°C one optional. A level hotplate is required — convection ovens are explicitly not recommended, as a skin can form on the resist and trap solvent. Vendor's own optimization method: after the prescribed bake, remove the wafer and let it cool to room temperature, then return it to the hotplate; if the film wrinkles, continue baking a few more minutes and repeat the cool/reheat cycle until wrinkles disappear.", "source": "Table 2 'Soft Bake Times', p.3 of SU-8 2000 (2025-2100) Technical Data Sheet, Kayaku Advanced Materials, April 2021" }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "spun-film", "bins": [ { "um_min": 25, "um_max": 40, "mJ_min": 150, "mJ_max": 160 }, { "um_min": 45, "um_max": 80, "mJ_min": 150, "mJ_max": 215 }, { "um_min": 85, "um_max": 110, "mJ_min": 215, "mJ_max": 240 }, { "um_min": 115, "um_max": 150, "mJ_min": 240, "mJ_max": 260 }, { "um_min": 160, "um_max": 225, "mJ_min": 260, "mJ_max": 350 }, { "um_min": 230, "um_max": 270, "mJ_min": 350, "mJ_max": 370 } ], "source": "Table 3 'Exposure Dose' of the SU-8 2000 (2025-2100) Technical Data Sheet, Kayaku Advanced Materials, April 2021 — indexed by film thickness and shared across the grades that document covers. Not explicitly attributed to a wavelength." } ], "basisCopy": "SU-8 2050's typical 45–80 µm coats take 150–215 mJ/cm²; the dose is indexed to the film you spun, so a 100 µm coat needs 215–240 mJ/cm² instead." }, "peb": { "temp_c": 95, "time_s": null, "notes": "Datasheet times are per THICKNESS bracket, so use the bracket matching the film actually coated. For the 45-80 µm bracket (SU-8 2050's typical working range): 1-2 min optional PEB at 65°C for stress reduction, followed by 6-7 min at 95°C. PEB should start directly after exposure. A visible latent mask image should appear in the resist within 5-15 s of starting the 95°C PEB step if exposure/heating were adequate; if no image forms, exposure and/or bake was insufficient.", "source": "Table 5 'Post Exposure Bake Times', p.4 of SU-8 2000 (2025-2100) Technical Data Sheet, Kayaku Advanced Materials, April 2021" }, "floodExposure": { "dose_mJcm2": null, "notes": null, "source": null }, "develop": { "developer": "SU-8 Developer (Kayaku's proprietary PGMEA-based developer); other solvent developers such as ethyl lactate or diacetone alcohol are also stated to work", "dilution": "undiluted", "time_s": null, "method": "immersion (spray or spray-puddle also usable per datasheet)", "rinse": "Fresh SU-8 developer spray/wash ~10 s, optionally repeated, then air/N2 dry with filtered pressurized gas. A white film during an IPA rinse indicates under-development of the unexposed resist -- treat with more SU-8 developer and repeat, rather than relying on IPA to finish the job. Ultrasonic/megasonic agitation is recommended for high-aspect-ratio or tight-pitch structures.", "source": "Table 6 'Development Times for SU-8 Developer' (45-75 µm bracket: 5-7 min), p.4 of SU-8 2000 (2025-2100) Technical Data Sheet, Kayaku Advanced Materials, April 2021" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 150, "max": 250 }, "time_s": null, "timeRange_s": { "min": 300, "max": 1800 }, "notes": "Optional and application-dependent, so no single figure is given: recommended final bake temperature is 10°C above the maximum expected device operating temperature; typical range is 150-250°C for 5-30 min depending on cure degree required. Separately, a short 150°C bake for 'a couple of minutes' is recommended specifically to anneal any surface cracks visible after development, and this applies to all film thicknesses.", "source": "Hard Bake (cure) section, p.5 of SU-8 2000 (2025-2100) Technical Data Sheet, Kayaku Advanced Materials, April 2021" }, "descum": null, "applications": [ "mems-structural", "high-aspect-ratio", "microfluidics", "electroplating-molding" ], "etchResistance": "Described as chemically and thermally very stable once crosslinked: thermal stability to 315°C (5% wt. loss), and the Removal section states it is 'extremely difficult to remove... with conventional solvent based resist strippers.' This robustness makes cured SU-8 usable as a durable etch/plating mold in many wet-chemical processes, at the cost of being hard to strip afterward (see stripper field).", "liftoffSuitable": false, "platingSuitable": true, "stripper": "Minimally-crosslinked SU-8: Kayaku Remover PG, 50-80°C bath, 30-90 min immersion (swells and lifts off partially-cured material; if OmniCoat 30-100 nm sacrificial layer was applied first, Remover PG gives a clean full lift-off). Fully cured/hard-baked SU-8 CANNOT be removed with Remover PG at all unless OmniCoat was used underneath. To rework fully crosslinked SU-8: oxidizing acid solutions (piranha etch), plasma ash, RIE (200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10°C), laser ablation, or pyrolysis.", "storage": "Store upright in tightly closed containers, in a cool dry environment away from direct sunlight, light, acids, heat, and ignition sources, at 40-70°F (4-21°C). Shelf life is 13 months from date of manufacture.", "notes": "SU-8 2050 sits in the middle of the SU-8 2000 family by viscosity (12,900 cSt vs. 4,500 for 2025 and 22,000 for 2075) and covers roughly 45-165 µm in a single coat over the datasheet's plotted 1000-4000 rpm range (the family description states thicknesses down to 0.5 µm and beyond 200 µm are achievable across the whole SU-8 2000 line, implying lower speeds than plotted would push a single 2050 coat higher still, but that isn't shown numerically for this grade). Choose 2050 over the thinner SU-8 2025 when a structure needs more height and mechanical robustness, and over the much thicker SU-8 2100/2150 grades when their hour-long bakes and very deep develops would otherwise dominate the process. PEB is the step where crosslinking actually completes (thermally-driven, acid-catalyzed epoxy reaction) -- a visible latent mask image appearing within 5-15 s of starting the 95°C PEB is the datasheet's own go/no-go check for adequate exposure and heating. Thick films are prone to cracking and delamination from thermal stress; besides the softbake wrinkle-check cycle, a University of Cornell Nanoscale Facility SOP (secondary source, not the vendor) recommends gradual heating/cooling for any layer >=50 µm, since silicon cools faster than SU-8, and a ~10 minute wait between exposure and PEB start for full latent-image (photoacid) formation. Because fully cross-linked SU-8 is essentially unstrippable with ordinary solvents, any process that will need to remove or release the structure later should plan for an OmniCoat sacrificial layer from the start, not as an afterthought.", "developerFamily": "solvent", "references": [ { "type": "paper", "title": "Negative photoresists for optical lithography", "authors": "Shaw et al.", "journal": "IBM Journal of Research and Development", "year": 1997, "doi": "10.1147/rd.411.0081", "url": "https://doi.org/10.1147/rd.411.0081", "accessedDate": "2026-07-15", "summary": "The IBM origin paper for the EPON-based epoxy negative resist that became SU-8, describing its formulation and use as a thick optical-lithography resist.", "note": "Family-level SU-8 reference (the foundational chemistry paper), cited here for the SU-8 2050 grade." }, { "type": "paper", "title": "SU-8: a low-cost negative resist for MEMS", "authors": "Lorenz et al.", "journal": "Journal of Micromechanics and Microengineering", "year": 1997, "doi": "10.1088/0960-1317/7/3/010", "url": "https://doi.org/10.1088/0960-1317/7/3/010", "accessedDate": "2026-07-15", "summary": "Established SU-8 as a MEMS structural resist, producing thick high-aspect-ratio structures by near-UV lithography.", "note": "Family-level SU-8 reference, cited here for the SU-8 2050 grade." }, { "type": "paper", "title": "SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography", "authors": "del Campo, Greiner", "journal": "Journal of Micromechanics and Microengineering", "year": 2007, "doi": "10.1088/0960-1317/17/6/R01", "url": "https://doi.org/10.1088/0960-1317/17/6/R01", "accessedDate": "2026-07-15", "summary": "Widely cited review of SU-8 processing (coat, bake, expose, develop) for high-aspect-ratio and 3D microstructures across the SU-8 family.", "note": "Family-level SU-8 review, cited here for the SU-8 2050 grade." } ], "troubleshooting": [ { "q": "What soft bake time and temperature does SU-8 2050 need?", "a": "Soft-bake times are given per film-thickness bracket, not per grade. For a typical SU-8 2050 film in the 45–80 µm range (about 3000 rpm), the datasheet specifies 0–3 min at 65°C followed by 6–9 min at 95°C on a level hotplate. Convection ovens are not recommended — a skin can form and trap solvent. After baking, cool the wafer to room temperature and reheat; if the film wrinkles, continue baking a few minutes and repeat until wrinkles no longer appear.", "source": "Kayaku SU-8 2000 (2025–2100) Technical Data Sheet, April 2021 — Table 2 Soft Bake Times, p.3" }, { "q": "What is the exposure dose for SU-8 2050?", "a": "Dose is published by film thickness, not by grade. SU-8 2050's typical ~45–80 µm working range falls in the 150–215 mJ/cm² bracket. i-line (365 nm) is the recommended wavelength (conventional UV 350–400 nm is also used). Multiply by ~1.5× on glass/Pyrex/ITO and 1.5–2× on silicon nitride and most metals versus silicon. A 350 nm long-pass filter for vertical sidewalls needs ~40% more exposure. No separate 405 nm dose is published.", "source": "Kayaku SU-8 2000 (2025–2100) Technical Data Sheet, April 2021 — Table 3 Exposure Dose + Table 4 substrate multipliers" }, { "q": "Does SU-8 2050 need a post-exposure bake?", "a": "Yes — PEB is where cross-linking actually completes (a thermally driven, acid-catalyzed epoxy reaction), so it is essential. Times are thickness-binned; for the 45–80 µm bracket, an optional 1–2 min at 65°C for stress reduction then 6–7 min at 95°C, starting directly after exposure. A latent mask image should appear within 5–15 s of reaching 95°C; if none forms, exposure or heating was inadequate.", "source": "Kayaku SU-8 2000 (2025–2100) Technical Data Sheet, April 2021 — Table 5 Post Exposure Bake Times, p.4" }, { "q": "Which developer does SU-8 2050 use?", "a": "SU-8 Developer, Kayaku's PGMEA-based developer, used undiluted by immersion (spray or spray-puddle also work); ethyl lactate and diacetone alcohol are also stated to work. For the 45–75 µm bracket, immersion runs about 5–7 min. A white film during rinse means the unexposed resist is under-developed — apply more SU-8 developer rather than relying on IPA. Ultrasonic or megasonic agitation is recommended for high-aspect-ratio or tight-pitch structures.", "source": "Kayaku SU-8 2000 (2025–2100) Technical Data Sheet, April 2021 — Table 6 Development Times, p.4" }, { "q": "Why is my SU-8 2050 cracking or delaminating?", "a": "Thick SU-8 films are prone to cracking and delamination from thermal stress. The datasheet's soft-bake wrinkle test (cool then reheat, bake longer if it wrinkles) confirms the film is fully dry, and a short 150°C bake for a couple of minutes anneals cracks seen after development. For layers ≥50 µm a Cornell Nanoscale Facility SOP additionally recommends gradual heating and cooling, since silicon cools faster than SU-8.", "source": "Kayaku SU-8 2000 TDS Hard Bake section + Cornell Nanoscale Facility 'SU-8 Processing Suggestions' (v2, 2013), thermal-stress guidance" } ], "provenance": { "datasheetUrl": "https://kayakuam.com/wp-content/uploads/2020/08/KAM-SU-8-2000-2025-2075-Datasheet.8.19.20-final.pdf", "datasheetVersionOrDate": "SU-8 2000, 2025-2100, Technical Data Sheet, April 2021 (per footer on every page; fetched via a university-hosted mirror of the same document, https://nanofab.sites.olt.ubc.ca/files/2026/01/KAM-SU-8-2000-2025-2100-Datasheet-4.9.21-final-2.pdf, since kayakuam.com returned HTTP 403 to automated fetches during this session)", "accessedDate": "2026-07-10", "secondarySources": [ { "url": "https://www.cnfusers.cornell.edu/sites/default/files/Equipment-Resources/SU8%20processing%20suggestions.pdf", "what": "Cornell Nanoscale Facility 'SU-8 Processing Suggestions' (v2, July 2013) -- used only for practical process tips not in the vendor datasheet: pre-spin bubble-dissipation wait time for SU-8 2050+, the ~10 min exposure-to-PEB delay for latent image formation, and thermal-stress/cracking guidance for thick and multi-layer coats. Not used for any headline numeric spec (spin curve, dose, bake time/temp all come from the Kayaku datasheet)." } ] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "su-8-2025", "name": "SU-8 2025", "min_um": 21.7, "max_um": 79.2, "doseBasis": null }, { "slug": "su-8-2100", "name": "SU-8 2100", "min_um": 103, "max_um": 269, "doseBasis": null } ], "humanVerified": false }, { "slug": "su-8-2100", "name": "SU-8 2100", "manufacturer": "MicroChem", "productLine": "SU-8 2000 series", "aliases": [ "SU8 2100", "MicroChem SU-8 2100" ], "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed by the datasheet. The document presents SU-8 2000 exclusively for binary, high-aspect-ratio, vertical-sidewall permanent structures (\"high aspect ratio imaging\", \"vertical sidewalls\"); it makes no mention of grayscale or partial-exposure profiling.", "status": "active", "successorSlug": null, "summary": "SU-8 2100 is the very-thick-film grade of the SU-8 2000 family — the choice when a single coat must reach into the hundreds of microns, well beyond what SU-8 2025 or 2050 can lay down, at the cost of hour-scale bakes. SU-8 2100 is a very high-viscosity member of MicroChem's SU-8 2000 epoxy negative photoresist series, coating roughly 100-270 µm in a single pass for thick, permanent, high-aspect-ratio microstructures.", "thicknessRange": { "min_um": 103, "max_um": 269, "basis": "curve-span", "source": "curve-span: the document states no single achievable-thickness range for SU-8 2100 specifically (only thickness-binned process tables shared with SU-8 2150); the range here is the min/max of the SU-8 2100 curve in Figure 1 (3000 rpm to 1000 rpm), the blue trace isolated from the red SU-8 2150 trace by colour." }, "spinCurves": [ { "label": "SU-8 2100", "points": [ { "rpm": 1000, "um": 269 }, { "rpm": 2000, "um": 137 }, { "rpm": 3000, "um": 103 } ], "source": "read from Figure 1 \"SU-8 2000 Spin Speed versus Thickness\", p.2 of MicroChem \"SU-8 2000 Permanent Epoxy Negative Photoresist Processing Guidelines for SU-8 2100 and SU-8 2150\" (CNR-Nano mirror). The chart plots only two curves, unambiguously distinguished by both colour and marker shape: SU-8 2150 = red triangles (top curve), SU-8 2100 = blue circles (bottom curve), matching Table 1's viscosity ordering (2100 = 45,000 cSt < 2150 = 80,000 cSt, so 2100 coats thinner at a given speed). Each curve has only 3 markers, at 1000/2000/3000 rpm — the blue trace does not extend to 3500 rpm despite the chart's wider axis range.", "figureRead": true } ], "spinNotes": "Recommended program (same for both grades in this document): dispense 1 ml of resist per inch (25 mm) of substrate diameter; spin at 500 rpm for 5-10 s at 100 rpm/s acceleration, then spin at the target speed (per Figure 1) for 30 s at 300 rpm/s acceleration. Edge bead removal (EBR) with MicroChem's EBR PG solvent stream at the wafer edge is recommended before soft bake, both to limit hotplate contamination and to let the photomask reach close contact with the wafer. Source: \"Coat\" / \"Recommended Program\" / \"Edge Bead Removal (EBR)\", p.2.", "adhesion": { "hmds": false, "notes": "\"Adhesion promoters are typically not required.\" HMDS pretreatment (MCC Primer 80/20) is recommended only \"for applications that include electroplating.\" Source: \"Substrate Preparation\", p.2." }, "rehydration": null, "softbake": { "temp_c": null, "time_s": null, "method": "hotplate", "notes": "Published only as a THICKNESS-BINNED table shared by both grades covered in this document (SU-8 2100 and 2150), not a single value per grade: 100-150 µm → 5 min @65°C then 20-30 min @95°C; 160-225 µm → 5-7 min @65°C then 30-45 min @95°C; 230-270 µm → 7 min @65°C then 45-60 min @95°C; 280-550 µm → 7-10 min @65°C then 60-120 min @95°C. SU-8 2100's own spin curve spans roughly 105-270 µm (1000-3000 rpm), i.e. mostly the 100-150 and 230-270 µm bins. Convection ovens are explicitly not recommended (can skin over and trap solvent). A cool-down/re-heat 'wrinkle' check is described to confirm the film is fully dry.", "source": "Table 2 \"Soft Bake Times\", p.2 of the MicroChem SU-8 2000 (2100-2150) Processing Guidelines" }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "spun-film", "bins": [ { "um_min": 100, "um_max": 150, "mJ_min": 240, "mJ_max": 260 }, { "um_min": 160, "um_max": 225, "mJ_min": 260, "mJ_max": 350 }, { "um_min": 230, "um_max": 270, "mJ_min": 350, "mJ_max": 370 }, { "um_min": 280, "um_max": 550, "mJ_min": 370, "mJ_max": 600 } ], "source": "Table 3 'Exposure Dose' of the MicroChem SU-8 2000 (2100-2150) Processing Guidelines — one table indexed by film thickness, shared by SU-8 2100 and 2150. Not attributed to a specific wavelength (the document recommends i-line but states conventional UV, 350-400 nm, is most common)." } ], "basisCopy": "Dose tracks film thickness: SU-8 2100's 105–270 µm coats run 240–260 mJ/cm² near 100 µm, rising to 350–370 mJ/cm² by 250 µm." }, "peb": { "temp_c": null, "time_s": null, "notes": "Also thickness-binned across both grades: 100-150 µm → 5 min @65°C (optional stress-reduction step) then 10-12 min @95°C; 160-225 µm → 5 min @65°C then 12-15 min @95°C; 230-270 µm → 5 min @65°C then 15-20 min @95°C; 280-550 µm → 5 min @65°C then 20-30 min @95°C. After 1 minute of PEB at 95°C a latent mask image should already be visible; if not, exposure and/or heating was insufficient.", "source": "Table 5 \"Post Exposure Bake Times\", p.3" }, "floodExposure": null, "develop": { "developer": "SU-8 Developer (MicroChem)", "dilution": null, "time_s": null, "method": "immersion", "rinse": "IPA", "source": "\"Development\" and \"Rinse and Dry\" sections plus Table 6 \"Development Times for SU-8 Developer\", p.3" }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 150, "max": 250 }, "time_s": null, "timeRange_s": { "min": 300, "max": 1800 }, "notes": "Hard bake (cure) is optional and generally only needed if the finished device will see thermal processing in use; recommended final bake temperature is 10°C above the maximum expected device operating temperature. Typical range: 150-250°C for 5-30 minutes depending on degree of cure required. Separately, a short 150°C bake \"for a couple of minutes\" is recommended (all thicknesses) specifically to anneal any surface cracks seen after development.", "source": "\"Hard Bake (cure)\" section, p.4" }, "descum": null, "applications": [ "high-aspect-ratio", "mems-structural", "electroplating-molding" ], "etchResistance": null, "liftoffSuitable": false, "platingSuitable": true, "stripper": "MicroChem Remover PG swells and lifts only minimally cross-linked SU-8 2000. A fully cured/hard-baked film cannot be removed with Remover PG alone — it requires an OmniCoat (30-100 nm) sacrificial underlayer (heat Remover PG to 50-80°C, immerse 30-90 min) or an oxidizing strip (piranha etch, plasma ash, RIE, laser ablation, or pyrolysis). RIE recipe given: 200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10°C. Source: \"Removal\" / \"Plasma Removal\", p.4.", "storage": "Store upright in tightly closed containers, cool and dry, away from direct sunlight, at 40-70°F (4-21°C); away from light, acids, heat, and ignition sources. Shelf life is thirteen months from date of manufacture (note: the sibling 2025-2075 processing document states twelve months — the two documents disagree on shelf life). Source: \"Storage\", p.4.", "notes": "SU-8 2100 is the second-highest-viscosity grade in MicroChem's SU-8 2000 line (45,000 cSt) and is built for very thick, single-coat films — its own spin curve runs roughly 105-270 µm over 1000-3000 rpm. Reach for 2100 only when the device genuinely needs that film height; its long soft-bake and develop times and thick-film handling make the thinner SU-8 2025 and 2050 grades the better default whenever they can meet the thickness target. Like every SU-8 2000 grade, it cross-links in two stages — exposure generates acid, and the post-exposure bake thermally drives the epoxy cross-linking — so PEB is a required processing step, not an optional cure, and at this thickness the bake times stretch into hours (up to 60-120 minutes soft bake and 20-30 minutes PEB at 95°C for the thickest bin in this document). Soft-bake, PEB, dose and develop times are published only as thickness-binned ranges shared with SU-8 2150; treat the low end of the matching bin as a starting point and use the datasheet's cool-down/re-heat 'wrinkle' test to confirm the soft bake is complete before proceeding. Once fully cross-linked, SU-8 is notoriously hard to strip: plain solvent remover only works on minimally exposed/baked film, and a hard-baked structure needs either a sacrificial OmniCoat layer beneath it or an oxidizing strip (piranha, plasma ash, RIE, laser ablation, pyrolysis) to remove. Edge bead removal before soft bake is especially important at this film thickness to keep the photomask in close contact with the wafer.", "developerFamily": "solvent", "references": [ { "type": "paper", "title": "Negative photoresists for optical lithography", "authors": "Shaw et al.", "journal": "IBM Journal of Research and Development", "year": 1997, "doi": "10.1147/rd.411.0081", "url": "https://doi.org/10.1147/rd.411.0081", "accessedDate": "2026-07-15", "summary": "The IBM origin paper for the EPON-based epoxy negative resist that became SU-8, describing its formulation and use as a thick optical-lithography resist.", "note": "Family-level SU-8 reference (the foundational chemistry paper), cited here for the SU-8 2100 grade." }, { "type": "paper", "title": "SU-8: a low-cost negative resist for MEMS", "authors": "Lorenz et al.", "journal": "Journal of Micromechanics and Microengineering", "year": 1997, "doi": "10.1088/0960-1317/7/3/010", "url": "https://doi.org/10.1088/0960-1317/7/3/010", "accessedDate": "2026-07-15", "summary": "Established SU-8 as a MEMS structural resist, producing thick high-aspect-ratio structures by near-UV lithography.", "note": "Family-level SU-8 reference, cited here for the SU-8 2100 grade." }, { "type": "paper", "title": "SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography", "authors": "del Campo, Greiner", "journal": "Journal of Micromechanics and Microengineering", "year": 2007, "doi": "10.1088/0960-1317/17/6/R01", "url": "https://doi.org/10.1088/0960-1317/17/6/R01", "accessedDate": "2026-07-15", "summary": "Widely cited review of SU-8 processing (coat, bake, expose, develop) for high-aspect-ratio and 3D microstructures across the SU-8 family.", "note": "Family-level SU-8 review, cited here for the SU-8 2100 grade." } ], "troubleshooting": [ { "q": "What soft bake does SU-8 2100 need, and why does it take so long?", "a": "Soft-bake times are thickness-binned and stretch into hours at this film thickness. SU-8 2100's ~103–269 µm coat falls mostly in the 100–150 and 230–270 µm bins: 100–150 µm → 5 min at 65°C then 20–30 min at 95°C; 230–270 µm → 7 min at 65°C then 45–60 min at 95°C, on a level hotplate. Convection ovens are not recommended — the film can skin over and trap solvent. Use the cool-down/re-heat wrinkle test to confirm the bake is complete.", "source": "MicroChem SU-8 2000 (2100–2150) Processing Guidelines — Table 2 Soft Bake Times, p.2" }, { "q": "Does SU-8 2100 need a post-exposure bake?", "a": "Yes — the PEB thermally drives the epoxy cross-linking, so it is a required step, not an optional cure. Times are thickness-binned: 100–150 µm → 5 min at 65°C then 10–12 min at 95°C; 230–270 µm → 5 min at 65°C then 15–20 min at 95°C. A latent mask image should already be visible after 1 minute of PEB at 95°C; if it is not, exposure and/or heating was insufficient.", "source": "MicroChem SU-8 2000 (2100–2150) Processing Guidelines — Table 5 Post Exposure Bake Times, p.3" }, { "q": "Why is my SU-8 2100 cracking, and how do I fix it?", "a": "Thick SU-8 films crack from thermal stress. A short 150°C bake for a couple of minutes anneals surface cracks seen after development, and applies to all film thicknesses. Any optional hard bake otherwise runs 150–250°C for 5–30 min, at about 10°C above the maximum expected device operating temperature. Edge-bead removal before soft bake also matters at this thickness, to keep the photomask in close contact with the wafer.", "source": "MicroChem SU-8 2000 (2100–2150) Processing Guidelines — Hard Bake (cure) section, p.4" }, { "q": "How long does SU-8 2100 take to develop?", "a": "Development is immersion in SU-8 Developer, with thickness-binned times: 100–150 µm → 10–15 min; 160–225 µm → 15–17 min; 230–270 µm → 17–20 min. Rinse about 10 s with fresh developer, then about 10 s of IPA, then dry with filtered N2/air. A white film after the IPA rinse indicates underdevelopment — run another develop-and-rinse cycle rather than relying on IPA to finish.", "source": "MicroChem SU-8 2000 (2100–2150) Processing Guidelines — Table 6 Development Times + Rinse and Dry, p.3" }, { "q": "What exposure dose does SU-8 2100 need?", "a": "Dose is published per thickness bin: 100–150 µm → 240–260 mJ/cm²; 160–225 µm → 260–350 mJ/cm²; 230–270 µm → 350–370 mJ/cm². i-line (365 nm) is the recommended wavelength (conventional UV 350–400 nm is also used). Multiply by ~1.5× on glass/Pyrex/ITO and 1.5–2× on most metals and silicon nitride versus silicon. A >350 nm long-pass filter for vertical sidewalls needs ~40% more exposure.", "source": "MicroChem SU-8 2000 (2100–2150) Processing Guidelines — Table 3 Exposure Dose + Table 4 substrate multipliers, p.3" } ], "provenance": { "datasheetUrl": "https://litho.nano.cnr.it/wp-content/datasheets/SU-82000DataSheet2100and2150Ver5.pdf", "datasheetVersionOrDate": "No revision/date string is printed in the document body (a 5-page processing-guidelines PDF with no header/footer revision code). The mirror's filename indicates 'Ver5' (a byu.edu mirror of the apparently same document is filenamed 'Ver5-1').", "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "su-8-2025", "name": "SU-8 2025", "min_um": 21.7, "max_um": 79.2, "doseBasis": null }, { "slug": "su-8-2050", "name": "SU-8 2050", "min_um": 40.1, "max_um": 171, "doseBasis": null } ], "humanVerified": false }, { "slug": "su-8-3025", "name": "SU-8 3025", "manufacturer": "Kayaku MicroChem / MicroChem Corp.", "productLine": "SU-8 3000 series", "aliases": [ "SU8 3025" ], "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet; SU-8 3000 is described as a chemically-amplified negative epoxy resist for binary, high-aspect-ratio, permanent structures, and no partial-crosslink/grayscale dose-response data is given.", "status": "active", "successorSlug": null, "summary": "SU-8 3025 is the mid-viscosity grade of the newer SU-8 3000 series — the one to choose over an equivalent SU-8 2000 resist when a thick, high-aspect-ratio film keeps cracking or lifting, since the 3000 formulation was reworked to fix exactly that. SU-8 3025 is the third-lowest-viscosity member (4,400 cSt, 72.3% solids) of Kayaku MicroChem's five-grade SU-8 3000 permanent epoxy series (3005/3010/3025/3035/3050), an 'improved formulation' of SU-8 2000 offering better adhesion and lower coating stress for thick (family-wide 4-120 µm single-coat), high-aspect-ratio (>5:1), permanent MEMS structures that are imaged, cured, and left on the device rather than lifted off.", "thicknessRange": { "min_um": null, "max_um": null }, "spinCurves": [ { "label": "SU-8 3025", "points": [ { "rpm": 1000, "um": 58 }, { "rpm": 2000, "um": 37 }, { "rpm": 3000, "um": 25 }, { "rpm": 4000, "um": 23 } ], "source": "read from Figure 1, \"Spin speed vs. Thickness for SU-8 3000 resists (21°C US & EU)\", p.1 of the Kayaku Microchem/MicroChem \"SU-8 3000 Permanent Epoxy Negative Photoresist\" datasheet (BYU cleanroom mirror; no printed revision code). The chart plots five grades (3050/filled square, 3035/filled triangle, 3025/filled diamond, 3010/filled circle, 3005/open square), each with 4 markers at 1000/2000/3000/4000 rpm. SU-8 3025 is the filled-diamond series, 3rd from the top of five at every rpm, consistent with its legend position (3rd of 3050/3035/3025/3010/3005) and Table 1's viscosity ordering (3025 = 4400 cSt, the middle of the five grades). No numeric per-rpm table exists for SU-8 3025 alone in this datasheet — Tables 2/3/5/6 are thickness-binned ranges shared across the whole 3000 series, not per-grade spin data.", "figureRead": true } ], "spinNotes": "Recommended Program (family-wide, not grade-specific): dispense 1 ml resist per inch (25 mm) of substrate diameter; spin at 500 rpm for 5-10 s at 100 rpm/s acceleration (spread step); then spin at 3000 rpm for 30 s at 300 rpm/s acceleration as a generic starting point — the actual final rpm/time for a target SU-8 3025 thickness should be read from Figure 1 ('Spin speed vs. Thickness for SU-8 3000 resists', 21°C US & EU, p.1) or Figure 2 (23°C Japan & Asia, p.2), each of which plots all five grades (3005/3010/3025/3035/3050) as separate traces vs. 1000-5000 rpm with NO accompanying numeric table. Figure 1 (21°C US & EU) is the curve plotted above; the SU-8 3025 trace is the filled-diamond series, 3rd from the top of five, consistent with its legend position and Table 1's viscosity ordering (3025 = 4400 cSt, the middle of the five grades). Only that chart is plotted here — Figure 2 (23°C Japan & Asia) is not. No numeric table exists for SU-8 3025 alone — Table 1 (p.2) only ranks the five grades by viscosity. No edge-bead-removal step is described anywhere in this SU-8 3000 datasheet, and no resist rehydration hold is mentioned either.", "adhesion": { "hmds": false, "notes": "Adhesion promoters are stated as 'typically not required' for substrates cleaned per the recommended piranha (H2SO4+H2O2) wet etch or RIE/O2-barrel-ash prep. Exception: for applications requiring electroplating, the datasheet recommends pre-treating the substrate with MCC Primer 80/20 (HMDS)." }, "rehydration": null, "softbake": { "temp_c": 95, "time_s": null, "method": "hotplate", "notes": "95°C is fixed across all thickness brackets; only bake TIME varies by film thickness per Table 2: 4-10 µm -> 2-3 min; 8-15 µm -> 5-10 min; 20-50 µm -> 10-15 min; 30-80 µm -> 10-30 min; 40-100 µm -> 15-45 min. No single soft-bake time is quoted here, because the row that applies depends on the film thickness actually coated. Convection ovens are explicitly NOT recommended — a skin can form on the resist and trap solvent, incompletely drying the film. Vendor's own optimization check: after the prescribed bake, cool the wafer to room temperature, then return it to the hotplate; if the film wrinkles, continue baking and repeat the cool/reheat cycle until wrinkles no longer appear.", "source": "Table 2 'Soft Bake Times', p.2 of SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp." }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "spun-film", "bins": [ { "um_min": 4, "um_max": 10, "mJ_min": 100, "mJ_max": 200 }, { "um_min": 8, "um_max": 15, "mJ_min": 125, "mJ_max": 200 }, { "um_min": 20, "um_max": 50, "mJ_min": 150, "mJ_max": 250 }, { "um_min": 30, "um_max": 80, "mJ_min": 150, "mJ_max": 250 }, { "um_min": 40, "um_max": 100, "mJ_min": 150, "mJ_max": 250 } ], "source": "Table 3 'Exposure Dose', p.2 of the SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp. Brackets are indexed by film thickness and overlap exactly as printed. Not attributed to a specific wavelength — the document recommends i-line but states conventional UV (350-400 nm) is most common." } ], "basisCopy": "The bins overlap here, so a mid-range film matches more than one: 100–200 mJ/cm² for 4–10 µm, 125–200 mJ/cm² at 8–15 µm, and a flat 150–250 mJ/cm² across every bracket from 20 to 100 µm." }, "peb": { "temp_c": 95, "time_s": null, "notes": "An optional 1-minute 65°C stress-reduction pre-bake step precedes the main PEB across ALL thickness brackets (65°C time is a constant 1 min; only the main 95°C step's time varies by thickness) per Table 5: 4-10 µm -> 1-2 min; 8-15 µm -> 2-4 min; 20-50 µm -> 3-5 min; 30-80 µm -> 3-5 min; 40-100 µm -> 3-5 min. No single PEB time is quoted here — the row that applies depends on the film thickness actually coated. PEB should start directly after exposure. A visible latent mask image should appear within 1 minute of starting the 95°C step if exposure and bake were adequate; no visible image means insufficient exposure and/or temperature.", "source": "Table 5 'Post Exposure Bake Times', p.3 of SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp." }, "floodExposure": null, "develop": { "developer": "SU-8 Developer (MicroChem's proprietary solvent-based developer); ethyl lactate and diacetone alcohol are also stated to work", "dilution": null, "time_s": null, "method": null, "rinse": "Spray/wash with fresh SU-8 developer for ~10 s, then a second spray/wash with isopropyl alcohol (IPA) for ~10 s, then air/nitrogen dry with filtered pressurized gas. A white film appearing during the IPA rinse indicates under-development — immerse or spray with more SU-8 developer and repeat the rinse. Ultrasonic or megasonic bath agitation is recommended for developing out vias/holes in high-aspect-ratio structures.", "source": "Develop and Rinse-and-Dry sections, p.3 of SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp." }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 150, "max": 200 }, "time_s": null, "notes": "Optional, for applications where the imaged resist is left as part of the final device: 'the resist may be ramp/step hard baked between 150-200°C on a hot plate or in a convection oven to further cross link the material. Bake times vary based on type of bake process and film thickness.' No single temperature or time is given, and unlike softbake/PEB/develop, no thickness-bracket table is published for hardbake either.", "source": "Hard Bake (cure) section, p.3 of SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp." }, "descum": null, "applications": [ "mems-structural", "high-aspect-ratio", "electroplating-molding" ], "etchResistance": "Listed under Features as 'Excellent dry etch resistance' (p.1, no numeric selectivity given). The Plasma Removal section (p.4) gives an RIE recipe (200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10°C) specifically for STRIPPING crosslinked SU-8 — i.e. cured SU-8 requires an aggressive dedicated RIE recipe to remove at all, consistent with strong etch resistance during normal device processing.", "liftoffSuitable": false, "platingSuitable": true, "stripper": "MicroChem's Remover PG, 50-80°C bath, 30-90 min immersion — swells and lifts off minimally-crosslinked SU-8 3000; achieves a clean, thorough lift-off of fully-crosslinked SU-8 3000 only if a 30-100 nm OmniCoat sacrificial layer was applied first. Will NOT remove fully-cured/hard-baked SU-8 3000 without OmniCoat underneath. To rework fully cross-linked material with no OmniCoat: oxidizing acid solutions (piranha etch), plasma ash, RIE (200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10°C), laser ablation, or pyrolysis.", "storage": "Store upright, in tightly closed containers, in a cool, dry environment away from direct sunlight, at 40-70°F (4-21°C). Store away from light, acids, heat, and sources of ignition. Shelf life is twelve months from date of manufacture.", "notes": "SU-8 3025 is the third-lowest-viscosity member (4,400 cSt, 72.3% solids) of Kayaku MicroChem's five-grade SU-8 3000 permanent epoxy series (3005/3010/3025/3035/3050), an 'improved formulation' of SU-8 2000 offering better adhesion and lower coating stress for thick (family-wide 4-120 µm single-coat), high-aspect-ratio (>5:1), permanent MEMS structures that are imaged, cured, and left on the device rather than lifted off. Within the 3000 series it is the mid-viscosity option — thicker-coating than 3005 and 3010, thinner than 3035 and 3050 — and it is generally preferred over the matching SU-8 2000 grades when a process suffers adhesion loss or stress cracking, since the 3000 line was reformulated specifically to reduce both. Figures 1-2 plot all five grades' film thickness against 1000-5000 rpm spin speed on one shared axis with no accompanying numeric table, and the five traces are separable only by viscosity ranking, which bounds which curve belongs to 3025 without pinning its values — so no spin-curve points are published here for SU-8 3025. Softbake time, PEB time, exposure dose, and develop time are all published as THICKNESS-BINNED ranges common to the whole 3000 series (not per-grade single values), so no single number is quoted for any of them and the full bracket table is printed with each step instead — reporting one number would be false precision without first knowing which bracket a real SU-8 3025 process actually lands in. As with the rest of the SU-8 family, fully cross-linked SU-8 3025 is notoriously difficult to strip: MicroChem's Remover PG only lifts minimally-crosslinked resist (or fully-crosslinked resist sitting over a sacrificial OmniCoat layer); a hard-baked film with no OmniCoat underneath requires piranha etch, plasma ashing, RIE, laser ablation, or pyrolysis to remove.", "developerFamily": "solvent", "provenance": { "datasheetUrl": "http://cleanroom.groups.et.byu.net/su8.parts/SU-8%203000%20Data%20Sheet-1.pdf", "datasheetVersionOrDate": null, "accessedDate": "2026-07-10", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-10", "references": [ { "type": "paper", "title": "Negative photoresists for optical lithography", "authors": "Shaw et al.", "journal": "IBM Journal of Research and Development", "year": 1997, "doi": "10.1147/rd.411.0081", "url": "https://doi.org/10.1147/rd.411.0081", "accessedDate": "2026-07-15", "summary": "The IBM origin paper for the EPON-based epoxy negative resist that became SU-8, describing its formulation and use as a thick optical-lithography resist.", "note": "Family-level SU-8 reference (the foundational chemistry paper), cited here for the SU-8 3025 grade; these foundational SU-8 papers predate the 3000 series but describe the same epoxy resist chemistry." }, { "type": "paper", "title": "SU-8: a low-cost negative resist for MEMS", "authors": "Lorenz et al.", "journal": "Journal of Micromechanics and Microengineering", "year": 1997, "doi": "10.1088/0960-1317/7/3/010", "url": "https://doi.org/10.1088/0960-1317/7/3/010", "accessedDate": "2026-07-15", "summary": "Established SU-8 as a MEMS structural resist, producing thick high-aspect-ratio structures by near-UV lithography.", "note": "Family-level SU-8 reference, cited here for the SU-8 3025 grade; these foundational SU-8 papers predate the 3000 series but describe the same epoxy resist chemistry." }, { "type": "paper", "title": "SU-8: a photoresist for high-aspect-ratio and 3D submicron lithography", "authors": "del Campo, Greiner", "journal": "Journal of Micromechanics and Microengineering", "year": 2007, "doi": "10.1088/0960-1317/17/6/R01", "url": "https://doi.org/10.1088/0960-1317/17/6/R01", "accessedDate": "2026-07-15", "summary": "Widely cited review of SU-8 processing (coat, bake, expose, develop) for high-aspect-ratio and 3D microstructures across the SU-8 family.", "note": "Family-level SU-8 review, cited here for the SU-8 3025 grade; these foundational SU-8 papers predate the 3000 series but describe the same epoxy resist chemistry." } ], "dateModified": "2026-07-26", "familySiblings": [ { "slug": "su-8-3050", "name": "SU-8 3050", "min_um": 44.3, "max_um": 101.3, "doseBasis": null } ], "humanVerified": false }, { "slug": "su-8-3050", "name": "SU-8 3050", "manufacturer": "Kayaku MicroChem / MicroChem Corp.", "productLine": "SU-8 3000 series", "aliases": [ "SU8 3050", "MicroChem SU-8 3050", "Kayaku SU-8 3050" ], "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed in the datasheet; SU-8 3000 is described as a chemically-amplified negative epoxy resist for binary, high-aspect-ratio, permanent structures, and no partial-crosslink/grayscale dose-response data is given.", "status": "active", "successorSlug": null, "summary": "SU-8 3050 is the highest-viscosity grade of Kayaku's five-member SU-8 3000 series, an improved, lower-stress reformulation of SU-8 2000 for thick (roughly 44-101 µm per its own spin curve), high-aspect-ratio, permanent MEMS structures.", "thicknessRange": { "min_um": 44.3, "max_um": 101.3, "basis": "curve-span", "source": "curve-span: the family-wide 'The viscosity range of SU-8 3000 allows for film thicknesses of 4 to 120 µm in a single coat' (Product Description, p.1) is not SU-8 3050-specific. min/max are the span of this recipe's own SU-8 3050 curve: 44.3 µm at 4000 rpm to 101.3 µm at 1000 rpm, read from Figure 1 'Spin speed vs. Thickness for SU-8 3000 resists (21°C US & EU)', p.1." }, "spinCurves": [ { "label": "SU-8 3050", "points": [ { "rpm": 1000, "um": 101.3 }, { "rpm": 2000, "um": 67.4 }, { "rpm": 3000, "um": 50.3 }, { "rpm": 4000, "um": 44.3 } ], "source": "read from Figure 1, 'Spin speed vs. Thickness for SU-8 3000 resists (21°C US & EU)', p.1 of the Kayaku Microchem/MicroChem 'SU-8 3000 Permanent Epoxy Negative Photoresist' datasheet (BYU cleanroom mirror; no printed revision code) -- the same datasheet and figure used for SU-8 3025. The chart plots five grades (3050/filled square, 3035/filled triangle, 3025/filled diamond, 3010/filled circle, 3005/open square), each with 4 markers at 1000/2000/3000/4000 rpm. SU-8 3050 is the filled+stroked square marker and the topmost (largest thickness) of the five stacked markers at every rpm column, consistent with it being the highest-viscosity grade (12,000 cSt, Table 1) and its top-of-legend position.", "figureRead": true } ], "spinNotes": "Recommended Program (family-wide, not grade-specific): dispense 1 ml resist per inch (25 mm) of substrate diameter; spin at 500 rpm for 5-10 s at 100 rpm/s acceleration (spread step); then spin at 3000 rpm for 30 s at 300 rpm/s acceleration as a generic starting point -- the actual final rpm/time for a target SU-8 3050 thickness should be read from Figure 1 ('Spin speed vs. Thickness for SU-8 3000 resists', 21°C US & EU, p.1, the curve plotted above) or Figure 2 (23°C Japan & Asia, p.2, which is not plotted here). No numeric table exists for SU-8 3050 alone -- Table 1 (p.2) only ranks the five grades by viscosity (3050: 75.5% solids, 12,000 cSt, 1.153 g/ml density). No edge-bead-removal step is described anywhere in this SU-8 3000 datasheet, and no resist rehydration hold is mentioned either.", "adhesion": { "hmds": false, "notes": "Adhesion promoters are stated as 'typically not required' for substrates cleaned per the recommended piranha (H2SO4+H2O2) wet etch or RIE/O2-barrel-ash prep. Exception: for applications requiring electroplating, the datasheet recommends pre-treating the substrate with MCC Primer 80/20 (HMDS)." }, "rehydration": null, "softbake": { "temp_c": 95, "time_s": null, "method": "hotplate", "notes": "95°C is fixed across all thickness brackets; only bake TIME varies by film thickness per Table 2: 4-10 µm -> 2-3 min; 8-15 µm -> 5-10 min; 20-50 µm -> 10-15 min; 30-80 µm -> 10-30 min; 40-100 µm -> 15-45 min. The brackets are indexed by film thickness rather than by grade, and they overlap: this grade's own spin curve runs from 44.3 µm at 4000 rpm (which sits in the 20-50, 30-80 and 40-100 µm rows at once) to 101.3 µm at 1000 rpm (just past the top of the table), so bake to the row matching the thickness actually coated. Convection ovens are explicitly NOT recommended -- a skin can form on the resist and trap solvent, incompletely drying the film. Vendor's own optimization check: after the prescribed bake, cool the wafer to room temperature, then return it to the hotplate; if the film wrinkles, continue baking and repeat the cool/reheat cycle until wrinkles no longer appear.", "source": "Table 2 'Soft Bake Times', p.2 of SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp." }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": null, "binBasis": "spun-film", "bins": [ { "um_min": 4, "um_max": 10, "mJ_min": 100, "mJ_max": 200 }, { "um_min": 8, "um_max": 15, "mJ_min": 125, "mJ_max": 200 }, { "um_min": 20, "um_max": 50, "mJ_min": 150, "mJ_max": 250 }, { "um_min": 30, "um_max": 80, "mJ_min": 150, "mJ_max": 250 }, { "um_min": 40, "um_max": 100, "mJ_min": 150, "mJ_max": 250 } ], "source": "Table 3 'Exposure Dose', p.2 of the SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp. Brackets are indexed by film thickness and overlap exactly as printed. Not attributed to a specific wavelength — the document recommends i-line but states conventional UV (350-400 nm) is most common." } ], "basisCopy": "SU-8 3050's thinnest coat, 44.3 µm, lands in three of the table's overlapping brackets at once — 20–50, 30–80 and 40–100 µm — and all three read 150–250 mJ/cm². The table stops at 100 µm; this grade spins to 101.3 µm." }, "peb": { "temp_c": 95, "time_s": null, "timeRange_s": { "min": 180, "max": 300 }, "notes": "An optional 1-minute 65°C stress-reduction pre-bake step precedes the main PEB across ALL thickness brackets (65°C time is a constant 1 min; only the main 95°C step's time varies by thickness) per Table 5: 4-10 µm -> 1-2 min; 8-15 µm -> 2-4 min; 20-50 µm -> 3-5 min; 30-80 µm -> 3-5 min; 40-100 µm -> 3-5 min. The rows are indexed by film thickness rather than by grade, but every row covering this recipe's coating range (44.3-101.3 µm from its own spin curve) calls for the same 3-5 min at 95°C. PEB should start directly after exposure. A visible latent mask image should appear within 1 minute of starting the 95°C step if exposure and bake were adequate; no visible image means insufficient exposure and/or temperature.", "source": "Table 5 'Post Exposure Bake Times', p.3 of SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp." }, "floodExposure": null, "develop": { "developer": "SU-8 Developer (MicroChem's proprietary solvent-based developer); ethyl lactate and diacetone alcohol are also stated to work", "dilution": null, "time_s": null, "method": null, "rinse": "Spray/wash with fresh SU-8 developer for ~10 s, then a second spray/wash with isopropyl alcohol (IPA) for ~10 s, then air/nitrogen dry with filtered pressurized gas. A white film appearing during the IPA rinse indicates under-development -- immerse or spray with more SU-8 developer and repeat the rinse. Ultrasonic or megasonic bath agitation is recommended for developing out vias/holes in high-aspect-ratio structures.", "source": "Develop and Rinse-and-Dry sections, p.3 of SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp." }, "hardbake": { "temp_c": null, "tempRange_c": { "min": 150, "max": 200 }, "time_s": null, "notes": "Optional, for applications where the imaged resist is left as part of the final device: 'the resist may be ramp/step hard baked between 150-200°C on a hot plate or in a convection oven to further cross link the material. Bake times vary based on type of bake process and film thickness.' No single temperature or time is given, and unlike softbake/PEB/develop, no thickness-bracket table is published for hardbake either.", "source": "Hard Bake (cure) section, p.3 of SU-8 3000 Permanent Epoxy Negative Photoresist datasheet, Kayaku MicroChem/MicroChem Corp." }, "descum": null, "applications": [ "mems-structural", "high-aspect-ratio", "electroplating-molding" ], "etchResistance": "Listed under Features as 'Excellent dry etch resistance' (p.1, no numeric selectivity given). The Plasma Removal section (p.4) gives an RIE recipe (200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10°C) specifically for STRIPPING crosslinked SU-8 -- i.e. cured SU-8 requires an aggressive dedicated RIE recipe to remove at all, consistent with strong etch resistance during normal device processing.", "liftoffSuitable": false, "platingSuitable": true, "stripper": "MicroChem's Remover PG, 50-80°C bath, 30-90 min immersion -- swells and lifts off minimally-crosslinked SU-8 3000; achieves a clean, thorough lift-off of fully-crosslinked SU-8 3000 only if a 30-100 nm OmniCoat sacrificial layer was applied first. Will NOT remove fully-cured/hard-baked SU-8 3000 without OmniCoat underneath. To rework fully cross-linked material with no OmniCoat: oxidizing acid solutions (piranha etch), plasma ash, RIE (200 W, 80 sccm O2, 8 sccm CF4, 100 mTorr, 10°C), laser ablation, or pyrolysis.", "storage": "Store upright, in tightly closed containers, in a cool, dry environment away from direct sunlight, at 40-70°F (4-21°C). Store away from light, acids, heat, and sources of ignition. Shelf life is twelve months from date of manufacture.", "notes": "SU-8 3050 is the highest-viscosity member (12,000 cSt, 75.5% solids, 1.153 g/ml) of Kayaku MicroChem's five-grade SU-8 3000 permanent epoxy series (3005/3010/3025/3035/3050), an 'improved formulation' of SU-8 2000 offering better adhesion and lower coating stress for thick (family-wide 4-120 µm single-coat), high-aspect-ratio (>5:1), permanent MEMS structures that are imaged, cured, and left on the device rather than lifted off. Within the 3000 series it is the thickest-coating grade at any given spin speed -- its own curve runs from 101.3 µm (1000 rpm) down to 44.3 µm (4000 rpm), stacked above 3035/3025/3010/3005 at every rpm column, consistent with its top rank by viscosity. It is generally preferred over the matching SU-8 2050 grade (SU-8 2000 series) when a thick, high-aspect-ratio process suffers adhesion loss or stress cracking, since the 3000 line was reformulated specifically to reduce both. Softbake time, PEB time, and develop time are all published as THICKNESS-BINNED ranges common to the whole 3000 series (not per-grade single values), and the brackets overlap, so each of those steps quotes the full bracket table and no single time is stated for the grade; exposure dose is likewise indexed to film thickness, and the datasheet does not attribute Table 3's doses to a single wavelength. As with the rest of the SU-8 family, fully cross-linked SU-8 3050 is notoriously difficult to strip: MicroChem's Remover PG only lifts minimally-crosslinked resist (or fully-crosslinked resist sitting over a sacrificial OmniCoat layer); a hard-baked film with no OmniCoat underneath requires piranha etch, plasma ashing, RIE, laser ablation, or pyrolysis to remove.", "developerFamily": "solvent", "references": [], "provenance": { "datasheetUrl": "http://cleanroom.groups.et.byu.net/su8.parts/SU-8%203000%20Data%20Sheet-1.pdf", "datasheetVersionOrDate": null, "accessedDate": "2026-07-22", "secondarySources": [] }, "tier": "datasheet", "dateAdded": "2026-07-22", "dateModified": "2026-07-26", "familySiblings": [ { "slug": "su-8-3025", "name": "SU-8 3025", "min_um": null, "max_um": null, "doseBasis": null } ], "humanVerified": false }, { "slug": "suex", "name": "SUEX", "manufacturer": "DJ MicroLaminates", "productLine": "SUEX Dry Film Sheets (TDFS)", "aliases": [ "SUEX TDFS", "SUEX Dry Film Sheets", "DJ MicroLaminates SUEX" ], "tone": "negative", "chemistry": "epoxy", "photoimageable": true, "grayscaleSuitable": false, "grayscaleNote": "Not addressed by either datasheet. Both the Thick and Thin SUEX Data Sheets describe SUEX only as a negative-tone, permanent structural/plating epoxy for 'plating, wafer level packaging and MEMS applications'; neither mentions grayscale or partial-exposure profiling.", "status": "active", "successorSlug": null, "summary": "SUEX is DJ MicroLaminates' cationically-cured modified-epoxy dry-film photoresist, laminated — not spin-coated — onto a substrate as pre-cut sheets, spanning a thin-film line (20-75 µm) and a thick-film line (100 µm to 1 mm), for plating, wafer-level-packaging and MEMS structural applications.", "thicknessRange": { "min_um": 20, "max_um": 1000, "basis": "stated", "source": "Thin SUEX: 'Sheets are available in thicknesses from 20µm to 75µm...' (PRODUCT AVAILABILITY, p.1 of the Thin SUEX Data Sheet, Rev 6/2020) — Standard Thicknesses: 20, 25, 30, 50 and 75 µm (Table 1, p.2 additionally tabulates a 40 µm condition not listed among 'Standard Thicknesses'). Thick SUEX: 'Sheets are available in thicknesses from 100µm to 1mm...' (PRODUCT AVAILABILITY, p.1 of the Thick SUEX Data Sheet, June 2020) — Standard Thicknesses: 100, 125, 150, 200, 225, 250, 300, 350, 400 and 500 µm, with 'Custom thicknesses up to 1mm...available upon special request' stated in the same section. min_um=20 is the Thin sheet's stated floor; max_um=1000 is the Thick sheet's own stated ceiling (1 mm), taken verbatim from its opening availability sentence rather than the 500 µm standard-catalog subset." }, "coatingMethod": "dry-film-lamination", "spinCurves": [], "spinNotes": "Recommended hot-roll lamination conditions, stated identically in both the Thick and Thin datasheets: roller/plate temperature 60-70°C for all rolls (Thin datasheet: 'for all rolls and plates'); pressure 5-10 psi (30-65 kPa); speed 0.5-1.5 ft/min (0.15-0.5 m/min), with thicker films requiring slightly slower speeds. Source: 'LAMINATION' / 'Recommended conditions for hot roll lamination', p.1 of both the Thick SUEX Data Sheet (June 2020) and the Thin SUEX Data Sheet (Rev 6/2020). Pre-lamination substrate prep (both datasheets, 'SUBSTRATE PREPARATION', p.1) calls for the substrate to be free of organic contamination and metal oxides and cleaned/dried immediately before lamination, and mentions a 'dehydration bake' as sometimes needed before further cleaning/surface activation — but no dehydration-bake temperature or time is published anywhere in either datasheet, so no numeric pre-lamination substrate temperature is recorded. The clear PET cover sheet is removed immediately before lamination; sheets must not touch the substrate until <1 cm before the rollers; vacuum lamination is recommended over topography for thick films.", "adhesion": { "hmds": false, "notes": "'Adhesion promoters are typically not useful.' Source: 'SUBSTRATE PREPARATION', p.1 of both the Thick and Thin SUEX Data Sheets." }, "rehydration": null, "softbake": { "temp_c": null, "tempRange_c": { "min": 80, "max": 85 }, "time_s": 300, "method": "hotplate", "notes": "This is the post-lamination bake (PLB), not a softbake in the solvent-drying sense — the laminated sheet arrives solvent-free. It is normally not needed or recommended; run it only for improved adhesion and surface quality, on a hotplate at 80-85°C for 5 minutes.", "source": "'BAKE', p.1 of both the Thick SUEX Data Sheet (June 2020) and the Thin SUEX Data Sheet (Rev 6/2020)" }, "exposureDose": { "doses": [], "doseVsThickness": [ { "wavelength_nm": 365, "binBasis": "sheet-sku", "conditionKey": "uv-filtered", "conditionLabel": "Through an i-line filter", "bins": [ { "um_min": 20, "um_max": 20, "mJ_min": 720, "mJ_max": 720 }, { "um_min": 25, "um_max": 25, "mJ_min": 725, "mJ_max": 725 }, { "um_min": 30, "um_max": 30, "mJ_min": 760, "mJ_max": 760 }, { "um_min": 40, "um_max": 40, "mJ_min": 790, "mJ_max": 790 }, { "um_min": 50, "um_max": 50, "mJ_min": 825, "mJ_max": 825 }, { "um_min": 75, "um_max": 75, "mJ_min": 920, "mJ_max": 920 }, { "um_min": 100, "um_max": 100, "mJ_min": 1000, "mJ_max": 1000 }, { "um_min": 150, "um_max": 150, "mJ_min": 1200, "mJ_max": 1200 }, { "um_min": 200, "um_max": 200, "mJ_min": 1350, "mJ_max": 1350 }, { "um_min": 250, "um_max": 250, "mJ_min": 1500, "mJ_max": 1500 }, { "um_min": 350, "um_max": 350, "mJ_min": 1900, "mJ_max": 1900 }, { "um_min": 500, "um_max": 500, "mJ_min": 2500, "mJ_max": 2500 } ], "source": "Table 1 'Process conditions for Thick/Thin SUEX TDFS on Silicon Wafers', p.2 — the UV-filtered (i-line) exposure row, labelled 'mJ/cm2 @ 365 nm', of both the Thick SUEX Data Sheet (June 2020) and the Thin SUEX Data Sheet (Rev 6/2020). Estimated doses on silicon." }, { "wavelength_nm": 365, "binBasis": "sheet-sku", "conditionKey": "unfiltered", "conditionLabel": "No filter", "bins": [ { "um_min": 20, "um_max": 20, "mJ_min": 325, "mJ_max": 325 }, { "um_min": 25, "um_max": 25, "mJ_min": 320, "mJ_max": 320 }, { "um_min": 30, "um_max": 30, "mJ_min": 335, "mJ_max": 335 }, { "um_min": 40, "um_max": 40, "mJ_min": 348, "mJ_max": 348 }, { "um_min": 50, "um_max": 50, "mJ_min": 370, "mJ_max": 370 }, { "um_min": 75, "um_max": 75, "mJ_min": 430, "mJ_max": 430 }, { "um_min": 100, "um_max": 100, "mJ_min": 450, "mJ_max": 450 }, { "um_min": 150, "um_max": 150, "mJ_min": 515, "mJ_max": 515 }, { "um_min": 200, "um_max": 200, "mJ_min": 575, "mJ_max": 575 }, { "um_min": 250, "um_max": 250, "mJ_min": 675, "mJ_max": 675 }, { "um_min": 350, "um_max": 350, "mJ_min": 900, "mJ_max": 900 }, { "um_min": 500, "um_max": 500, "mJ_min": 1150, "mJ_max": 1150 } ], "source": "Table 1 'Process conditions for Thick/Thin SUEX TDFS on Silicon Wafers', p.2 — the no-filter exposure row, labelled 'mJ/cm2 @ 365 nm', of both the Thick SUEX Data Sheet (June 2020) and the Thin SUEX Data Sheet (Rev 6/2020). Estimated doses on silicon." } ], "basisCopy": "Dose is published per sheet thickness at 365 nm, with a separate figure for filtered and unfiltered exposure: a 100 µm sheet takes 1000 mJ/cm² through an i-line filter, 450 mJ/cm² without one." }, "peb": { "temp_c": null, "time_s": null, "notes": "Published only as THICKNESS-BINNED tables (Table 1), and the two product lines differ. Thick SUEX (100-500 µm) bakes at a constant 85°C with time scaling by thickness: 30 min (100 µm), 30 min (150 µm), 35 min (200 µm), 40 min (250 µm), 45 min (350 µm), 45 min (500 µm). Thin SUEX (20-75 µm) bakes for a constant 5 min across all thicknesses at 85-95°C. The general PEB prose (worded identically in both datasheets) separately recommends 'a 85°C oven bake for 30-60 minutes for lower stress or a 95°C bake for 5–10 minutes for speed', then to 'cool slowly over 3-5 hours for minimum cracks and best adhesion.' The PET coversheet must be removed before PEB.", "source": "Table 1 'Process conditions for Thick/Thin SUEX TDFS on Silicon Wafers', p.2; 'POST EXPOSURE BAKE (PEB)', p.1 — both the Thick SUEX Data Sheet (June 2020) and the Thin SUEX Data Sheet (Rev 6/2020)" }, "floodExposure": null, "develop": { "developer": "PGMEA (propylene glycol methyl ether acetate), two-bath system", "dilution": null, "time_s": null, "method": "immersion", "rinse": "IPA", "source": "'DEVELOPMENT' and 'RINSE/DRY', p.1; Table 1 'Devl Time Face Down', p.2 — both the Thick SUEX Data Sheet (June 2020) and the Thin SUEX Data Sheet (Rev 6/2020)" }, "hardbake": { "temp_c": null, "time_s": null, "notes": "Optional. The datasheet gives discrete named options rather than a single condition: 125°C/60 min, 150°C/30 min, or 150°C/15-20 min. Separately, 'a 200°C hard bake for 30 – 60 minutes is required to remove all volatile components from the film' if full outgassing is needed.", "source": "'HARD BAKE (Optional)', p.1 of both the Thick SUEX Data Sheet (June 2020) and the Thin SUEX Data Sheet (Rev 6/2020)" }, "descum": null, "applications": [ "mems-structural", "electroplating-molding" ], "etchResistance": null, "liftoffSuitable": null, "platingSuitable": true, "stripper": "SUEX is not intended to be removed once processed: 'SUEX is generally used as a permanent highly cross-linked film and is not intended to be removed.' For film that has not been hard baked, an NMP-based remover may lift it from the substrate; hard-baked film is generally removed only with CO2 laser ablation equipment. Source: 'REMOVAL', p.1 of both the Thick SUEX Data Sheet (June 2020) and the Thin SUEX Data Sheet (Rev 6/2020).", "storage": "Store in the original black packaging in a standard, temperature-controlled environment between 18°C (65°F) and 25°C (77°F); shelf life is up to 2 years from date of manufacture under those conditions. Source: 'STORAGE', p.1 of both the Thick SUEX Data Sheet (June 2020) and the Thin SUEX Data Sheet (Rev 6/2020).", "notes": "SUEX is DJ MicroLaminates' cationically-cured epoxy dry-film photoresist, supplied as thin (20-75 µm) and thick (100 µm-1 mm) laminate sheets rather than spin-coated, making it a common choice for high-aspect-ratio MEMS structures, wafer-level-packaging molds, and electroplating templates where single-pass spin-coat thickness limits become impractical. Because it laminates onto the substrate via a heated roller rather than a spindle, its process is defined by roller temperature, speed and pressure instead of a spin curve, and its exposure dose, post-exposure bake and develop time are all published as thickness-binned tables rather than single values — treat the row matching the target sheet thickness as the starting point. The datasheet explicitly identifies the cured film as a permanent, highly cross-linked structural layer 'not intended to be removed', strippable only with an NMP-based remover before hard bake or by CO2 laser ablation after, so it is suited to permanent-structure and plating-mold applications rather than a sacrificial lift-off role.", "developerFamily": "solvent", "references": [ { "type": "paper", "title": "SUEX process optimization for ultra-thick high-aspect ratio LIGA imaging", "authors": "Johnson et al.", "journal": "Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII", "year": 2011, "doi": "10.1117/12.882872", "url": "https://doi.org/10.1117/12.882872", "accessedDate": "2026-07-16", "summary": "Optimizes the processing of SUEX thick dry film sheets for ultra-thick, high-aspect-ratio X-ray LIGA imaging. Names this exact product in its title and is the closest thing in the literature to a process-development paper on the material itself.", "note": "SPIE conference proceedings, not a journal article. Verified via Crossref metadata (title, authors, venue, year); the SPIE full text was not fetchable in-session, so the summary paraphrases the title only." }, { "type": "paper", "title": "Dry Film Photoresist-Based Microfabrication: A New Method to Fabricate Millimeter-Wave Waveguide Components", "authors": "Farjana et al.", "journal": "Micromachines", "year": 2021, "doi": "10.3390/mi12030260", "url": "https://doi.org/10.3390/mi12030260", "accessedDate": "2026-07-16", "summary": "Laminated SUEX dry film sheets to build a ridge gap waveguide resonator operating above 200 GHz, using a 40 um base layer and 200, 50 and 20 um sheets for the structure layers. A worked example of stacking several sheet thicknesses to reach a target structure height.", "note": "Names this exact product: 'SUEX epoxy dry film (DJ MICROLAMINATES Inc.) sheets of 6-inch wafer cut sizes and different thicknesses were used' (Materials). Cited as multi-layer lamination evidence; it is a device paper and does not characterize the resist itself." }, { "type": "paper", "title": "Dry Film Resist Laminated Microfluidic System for Electrical Impedance Measurements", "authors": "Cao et al.", "journal": "Micromachines", "year": 2021, "doi": "10.3390/mi12060632", "url": "https://doi.org/10.3390/mi12060632", "accessedDate": "2026-07-16", "summary": "A three-level lamination process for a microfluidic chip with embedded, vertically arranged microelectrodes, used for electrical impedance spectroscopy of trapped micro-objects. Demonstrates repeated lamination steps building a multi-level structure without spin coating.", "note": "Uses the SUEX K25 grade (25 um, the thin-film line of the two lines this entry covers), named in Materials: '25 um thick SUEX K25 DFR and mr-Dev600 developer were purchased from micro resist technology GmbH' (a European distributor of DJ MicroLaminates' product)." } ], "troubleshooting": [ { "q": "How do I laminate SUEX without trapping bubbles or wrinkles?", "a": "SUEX is applied with a heated roll laminator, not spin-coated: rollers at 60–70°C, 5–10 psi (30–65 kPa) and 0.5–1.5 ft/min (0.15–0.5 m/min), with thicker films run slightly slower. Peel the clear PET cover off immediately before lamination and keep the sheet from touching the substrate until under 1 cm from the rollers. Over topography, or for thick films, use vacuum lamination.", "source": "SUEX Data Sheets (Thick June 2020 / Thin Rev 6/2020) — LAMINATION, p.1" }, { "q": "Why is my SUEX cracking after post-exposure bake?", "a": "Cool slowly — the datasheet says to ramp down over 3–5 hours after PEB for minimum cracks and best adhesion. PEB itself is thickness-binned: thick SUEX bakes at 85°C for 30–45 min, thin SUEX for 5 min at 85–95°C; a lower-stress option is an 85°C oven for 30–60 min. Remove the PET coversheet before PEB.", "source": "SUEX Data Sheets (Thick June 2020 / Thin Rev 6/2020) — POST EXPOSURE BAKE (PEB), Table 1, p.1–2" }, { "q": "Does SUEX need a bake after lamination, and how do I improve adhesion?", "a": "A post-lamination bake is normally not needed or recommended, but for improved adhesion and surface quality you may bake the laminated article on a hotplate at 80–85°C for 5 min. Adhesion promoters are typically not useful; instead ensure the substrate is free of organic contamination and metal oxides and is cleaned and dried immediately before lamination.", "source": "SUEX Data Sheets (Thick June 2020 / Thin Rev 6/2020) — BAKE and SUBSTRATE PREPARATION, p.1" }, { "q": "How is SUEX developed?", "a": "Develop at room temperature in a two-bath PGMEA system, face down with mild agitation; develop time is thickness-binned (Table 1) rather than a single value — for example 35 min for a 100 µm thick sheet up to 140 min at 500 µm. Rinse by washing in isopropyl alcohol, then immerse in clean IPA for 1–5 minutes.", "source": "SUEX Data Sheets (Thick June 2020 / Thin Rev 6/2020) — DEVELOPMENT and RINSE/DRY, Table 1, p.1–2" } ], "provenance": { "datasheetUrl": "https://djmicrolaminates.com/wp-content/uploads/2020/06/Thick-SUEX-Data-Sheet-June-2020.pdf", "datasheetVersionOrDate": "June 2020 (Thick SUEX Data Sheet, Rev June 2020; sibling Thin SUEX Data Sheet, Rev 6/2020)", "accessedDate": "2026-07-11", "secondarySources": [ { "url": "https://djmicrolaminates.com/wp-content/uploads/2020/06/Thin-SUEX-Data-Sheet-June-2020.pdf", "what": "Thin SUEX (20-75 µm) Data Sheet, Rev 6/2020 — the source of the thin-film Table 1 process conditions and the 20-75 µm stated thickness range; read jointly with the Thick datasheet since 'SUEX' is one product family spanning both sheets." } ] }, "tier": "datasheet", "dateAdded": "2026-07-11", "dateModified": "2026-07-26", "humanVerified": false } ] }